Works matching DE "PERFORMANCE of metal oxide semiconductor field-effect transistors"
1
- International Journal of RF & Microwave Computer-Aided Engineering, 2014, v. 24, n. 2, p. 259, doi. 10.1002/mmce.20757
- Sun, Ling;
- Gao, Jianjun;
- Werthof, Andreas
- Article
2
- Journal of Circuits, Systems & Computers, 2017, v. 26, n. 5, p. -1, doi. 10.1142/S0218126617500748
- Article
3
- Electronics (2079-9292), 2017, v. 6, n. 3, p. 62, doi. 10.3390/electronics6030062
- Crupi, Giovanni;
- Schreurs, Dominique M. M.-P.;
- Caddemi, Alina
- Article
4
- Electronics & Communications in Japan, 2013, v. 96, n. 3, p. 1, doi. 10.1002/ecj.11471
- Takagi, Hajime;
- Orihara, Masato;
- Yamada, Tsutomu;
- Yanagidaira, Takeshi
- Article
5
- IET Power Electronics (Wiley-Blackwell), 2017, v. 10, n. 9, p. 979, doi. 10.1049/iet-pel.2016.0668
- Shan Yin;
- Pengfei Tu;
- King Jet Tseng;
- Simanjorang, Rejeki
- Article
6
- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 13, p. 1, doi. 10.1002/pssa.201700882
- Król, Krystian;
- Sochacki, Mariusz;
- Taube, Andrzej;
- Kwietniewski, Norbert;
- Gierałtowska, Sylwia;
- Wachnicki, Łukasz;
- Godlewski, Marek;
- Szmidt, Jan
- Article
7
- Journal of King Abdulaziz University: Engineering Sciences, 2015, v. 26, n. 1, p. 97, doi. 10.4197/Eng.26-1.6
- Article
