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Inside Back Cover: Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment (Phys. Status Solidi A 6/2012).
- Published in:
- 2012
- By:
- Publication type:
- Editorial
Sharp contrast of the density and size of Ga metal droplets on photolithographically patterned GaAs (100) by droplet epitaxy under an identical growth environment.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 6, p. 1075, doi. 10.1002/pssa.201127692
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- Publication type:
- Article
In<sub> x</sub>Ga<sub>1− x</sub>As quantum wire network-like and ordered checker board-like nanostructures on GaAs (311) by low In composition multi-layer stacking.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 1, p. 47, doi. 10.1002/pssa.201026611
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- Publication type:
- Article
Inside Back Cover: In<sub> x</sub>Ga<sub>1− x</sub>As quantum wire network-like and ordered checker board-like nanostructures on GaAs (311) by low In composition multi-layer stacking (Phys. Status Solidi A 1/2011).
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 1, p. n/a, doi. 10.1002/pssa.201026611
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- Publication type:
- Article
Ordered SrTiO<sub>3</sub> Nanoripples Induced by Focused Ion Beam.
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- Nano-Micro Letters, 2012, v. 4, n. 4, p. 243, doi. 10.1007/BF03353721
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- Publication type:
- Article
Self-Assembly of Multiple Stacked Nanorings by Vertically Correlated Droplet Epitaxy.
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- Advanced Functional Materials, 2014, v. 24, n. 4, p. 530, doi. 10.1002/adfm.201302032
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- Publication type:
- Article
Bismuth surfactant mediated growth of InAs quantum dots by molecular beam epitaxy.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 5, p. 1635, doi. 10.1007/s10854-012-0987-z
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- Publication type:
- Article
Enhancement of thermal conductivity of hydrogenated silicon film by microcrystalline structure growth.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 1, p. 224, doi. 10.1007/s10854-011-0390-1
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- Publication type:
- Article
Low thermal drift in highly sensitive doped channel Al<sub>0.3</sub>Ga<sub>0.7</sub>As/GaAs/In<sub>0.2</sub>Ga<sub>0.8</sub>As micro-Hall element.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 776, doi. 10.1007/s10854-007-9408-0
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- Publication type:
- Article
Lateral and vertical ordered one-dimensional InGaAs/GaAs quantum structures.
- Published in:
- Applied Physics A: Materials Science & Processing, 2009, v. 96, n. 2, p. 307, doi. 10.1007/s00339-009-5204-4
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- Publication type:
- Article
Observing Inquiry-Based Learning Environments Using the Scholastic Inquiry Observation Instrument.
- Published in:
- International Journal of Science & Mathematics Education, 2018, v. 16, n. 8, p. 1455, doi. 10.1007/s10763-017-9843-1
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- Publication type:
- Article
PL of low-density InAs/GaAs quantum dots with different bimodal populations.
- Published in:
- Micro & Nano Letters (Wiley-Blackwell), 2017, v. 12, n. 9, p. 599, doi. 10.1049/mnl.2016.0779
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- Publication type:
- Article
An Effective Electric Dipole Model for Voltage-induced Gating Mechanism of Lysenin.
- Published in:
- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-47725-0
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- Publication type:
- Article
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy.
- Published in:
- Nanomaterials (2079-4991), 2024, v. 14, n. 11, p. 909, doi. 10.3390/nano14110909
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- Publication type:
- Article
Ordered quantum-ring chains grown on a quantum-dot superlattice template.
- Published in:
- Journal of Nanoparticle Research, 2012, v. 14, n. 6, p. 1, doi. 10.1007/s11051-012-0919-0
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- Publication type:
- Article
Insight into optical properties of strain-free quantum dot pairs.
- Published in:
- Journal of Nanoparticle Research, 2011, v. 13, n. 3, p. 947, doi. 10.1007/s11051-010-0219-5
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- Publication type:
- Article
Nanoscale Footprints of Self-Running Gallium Droplets on GaAs Surface.
- Published in:
- PLoS ONE, 2011, v. 6, n. 6, p. 1, doi. 10.1371/journal.pone.0020765
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- Publication type:
- Article
Optimisation of the dislocation filter layers in 1.3‐μm InAs/GaAs quantum‐dot lasers monolithically grown on Si substrates.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2015, v. 9, n. 2, p. 61, doi. 10.1049/iet-opt.2014.0078
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- Publication type:
- Article
Adhesive force between graphene nanoscale flakes and living biological cells.
- Published in:
- Journal of Applied Toxicology, 2017, v. 37, n. 11, p. 1346, doi. 10.1002/jat.3478
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- Publication type:
- Article
Physicochemical characteristics of pristine and functionalized graphene.
- Published in:
- Journal of Applied Toxicology, 2017, v. 37, n. 11, p. 1288, doi. 10.1002/jat.3493
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- Publication type:
- Article
Influence of Ga coverage on the sizes of GaAs quantum dash pairs grown by high temperature droplet epitaxy.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 7, p. 309, doi. 10.1002/pssr.201206236
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- Publication type:
- Article
Thermal etching process of microscale pits on the GaAs(001) surface.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2012, v. 6, n. 1, p. 25, doi. 10.1002/pssr.201105482
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- Publication type:
- Article
Surface mediated control of droplet density and morphology on GaAs and AlAs surfaces.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 12, p. 371, doi. 10.1002/pssr.201004402
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- Publication type:
- Article
Modeling Study of Si 3 N 4 Waveguides on a Sapphire Platform for Photonic Integration Applications.
- Published in:
- Materials (1996-1944), 2024, v. 17, n. 16, p. 4148, doi. 10.3390/ma17164148
- By:
- Publication type:
- Article
Self-Organization of InAs Quantum-Dot Clusters Directed by Droplet Homoepitaxy.
- Published in:
- Small, 2007, v. 3, n. 2, p. 235, doi. 10.1002/smll.200600330
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- Publication type:
- Article
High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam.
- Published in:
- Crystals (2073-4352), 2024, v. 14, n. 8, p. 724, doi. 10.3390/cryst14080724
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- Publication type:
- Article
The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire.
- Published in:
- Crystals (2073-4352), 2024, v. 14, n. 5, p. 414, doi. 10.3390/cryst14050414
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- Publication type:
- Article
Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy.
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- Crystals (2073-4352), 2023, v. 13, n. 11, p. 1557, doi. 10.3390/cryst13111557
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- Publication type:
- Article
Carrier Injection to In 0.4 Ga 0.6 As/GaAs Surface Quantum Dots in Coupled Hybrid Nanostructures.
- Published in:
- Crystals (2073-4352), 2022, v. 12, n. 3, p. 319, doi. 10.3390/cryst12030319
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- Publication type:
- Article
Impact of Long-Term Annealing on Photoluminescence from Ge 1−x Sn x Alloys.
- Published in:
- Crystals (2073-4352), 2021, v. 11, n. 8, p. 905, doi. 10.3390/cryst11080905
- By:
- Publication type:
- Article
Interplay Effect of Excitation and Temperature on Carrier Transfer between Vertically Aligned InAs/GaAs Quantum Dot Pairs.
- Published in:
- Crystals (2073-4352), 2016, v. 6, n. 11, p. 144, doi. 10.3390/cryst6110144
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- Publication type:
- Article
The Growth of Polarization Domains in Ultrathin Ferroelectric Films Seeded by the Tip of an Atomic Force Microscope.
- Published in:
- Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03688-2
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- Publication type:
- Article
Investigation of the Structural and Optical Properties of Compositionally V‐Graded Strained In<sub>x</sub>Ga<sub>1–x</sub>N Layers.
- Published in:
- Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900591
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- Publication type:
- Article
Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-67961-z
- By:
- Publication type:
- Article
The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study.
- Published in:
- Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1478-6
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- Publication type:
- Article
Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates.
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 8, p. 1320, doi. 10.1007/s11671-010-9645-7
- By:
- Publication type:
- Article
InGaAs Quantum Well Grown on High-Index Surfaces for Superluminescent Diode Applications.
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 6, p. 1079, doi. 10.1007/s11671-010-9605-2
- By:
- Publication type:
- Article
Self-organization of quantum-dot pairs by high-temperature droplet epitaxy.
- Published in:
- Nanoscale Research Letters, 2006, v. 1, n. 1, p. 57, doi. 10.1007/s11671-006-9002-z
- By:
- Publication type:
- Article
Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift.
- Published in:
- Nano Research, 2022, v. 15, n. 3, p. 2405, doi. 10.1007/s12274-021-3855-4
- By:
- Publication type:
- Article
Site-controlled formation of InGaAs quantum nanostructures-Tailoring the dimensionality and the quantum confinement.
- Published in:
- Nano Research, 2013, v. 6, n. 4, p. 235, doi. 10.1007/s12274-013-0299-5
- By:
- Publication type:
- Article
Uniform thickness and colloidal-stable CdS quantum disks with tunable thickness: Synthesis and properties.
- Published in:
- Nano Research, 2012, v. 5, n. 5, p. 337, doi. 10.1007/s12274-012-0214-5
- By:
- Publication type:
- Article
Holed nanostructures formed by aluminum droplets on a GaAs substrate.
- Published in:
- Nano Research, 2010, v. 3, n. 7, p. 490, doi. 10.1007/s12274-010-0009-5
- By:
- Publication type:
- Article
Toward Single Atom Chains with Exfoliated Tellurium.
- Published in:
- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2255-x
- By:
- Publication type:
- Article
Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.
- Published in:
- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2171-0
- By:
- Publication type:
- Article
Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness.
- Published in:
- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-1998-8
- By:
- Publication type:
- Article
Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures.
- Published in:
- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-1954-7
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- Publication type:
- Article