Works matching DE "AMORPHOUS semiconductors"
Results: 543
Reversible Room Temperature Brittle‐Plastic Transition in Ag<sub>2</sub>Te<sub>0.6</sub>S<sub>0.4</sub> Inorganic Thermoelectric Semiconductor.
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 26, p. 1, doi. 10.1002/adfm.202300189
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- Article
Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction.
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- Advanced Functional Materials, 2023, v. 33, n. 25, p. 1, doi. 10.1002/adfm.202300742
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- Article
A Site‐Specific Charge Carrier Control in Monolithic Integrated Amorphous Oxide Semiconductors and Circuits with Locally Induced Optical‐Doping Process.
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- Advanced Functional Materials, 2019, v. 29, n. 39, p. N.PAG, doi. 10.1002/adfm.201904770
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- Article
Phase behaviour, mechanical properties and thermal stability of thermosetting polymer blends of unsaturated polyester resin and poly(ethylene oxide).
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- Journal of Materials Science, 1999, v. 34, n. 1, p. 123, doi. 10.1023/A:1004486129169
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- Article
Microstructure of nanostructured Fe40Ni38Mo4B18 alloy.
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- Journal of Materials Science, 1999, v. 34, n. 1, p. 111, doi. 10.1023/A:1004477910514
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- Article
Amorphous phase formation of the pseudo-binary Al2O3–ZrO2 alloy during plasma spray processing.
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- Journal of Materials Science, 1999, v. 34, n. 1, p. 29, doi. 10.1023/A:1004492919174
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- Article
Effect of annealing on the structural and electrical properties of In2Te3.
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- Journal of Materials Science, 1998, v. 33, n. 9, p. 2441, doi. 10.1023/A:1004320311653
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- Article
About Some Boundary Value Problems for Fractional PDE and their Numerical Solution.
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- PAMM: Proceedings in Applied Mathematics & Mechanics, 2013, v. 13, n. 1, p. 445, doi. 10.1002/pamm.201310216
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- Article
Flexible metal-oxide devices made by room-temperature photochemical activation of sol-gel films.
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- Nature, 2012, v. 489, n. 7414, p. 128, doi. 10.1038/nature11434
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- Article
Transient Photoconductivity in Amorphous Se-Ge-Ag System.
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- Turkish Journal of Physics, 2006, v. 30, n. 1, p. 47
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- Article
Modulation Frequency-Dependence of Photocurrent in Amorphous Si:H p-i-n and Chalcogenides.
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- Turkish Journal of Physics, 2002, v. 26, n. 5, p. 355
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- Article
Enlightenment of Deionized‐Water Bathing IGZO TFTs.
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- Advanced Electronic Materials, 2024, v. 10, n. 11, p. 1, doi. 10.1002/aelm.202400186
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- Article
Direct Observation for Distinct Behaviors of Gamma‐Ray Irradiation‐Induced Subgap Density‐of‐States in Amorphous InGaZnO TFTs by Multiple‐Wavelength Light Source.
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- Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300906
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- Article
Unveiled Influence of Sub‐gap Density of States on Low‐Frequency Noise in Si‐Doped ZnSnO TFTs: Does Correlated Mobility Fluctuation Model Suffice?
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- Advanced Electronic Materials, 2024, v. 10, n. 2, p. 1, doi. 10.1002/aelm.202300515
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- Article
Perspective: Zinc‐Tin Oxide Based Memristors for Sustainable and Flexible In‐Memory Computing Edge Devices.
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- Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300286
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- Article
Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200807
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- Article
Phase‐Controlled Artificial SiZnSnO/P(VDF‐TrFE) Synaptic Devices with a High Dynamic Range for Neuromorphic Computing.
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- Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200810
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- Article
Flexible Active Crossbar Arrays Using Amorphous Oxide Semiconductor Technology toward Artificial Neural Networks Hardware.
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- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200642
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- Article
Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200280
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- Article
The Effect of the Charge Transfer Transition of the Tetravalent Terbium on the Photostability of Oxide Thin‐Film Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200187
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- Article
A Fully Integrated Ferroelectric Thin‐Film‐Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100082
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- Publication type:
- Article
Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors.
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- Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001216
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- Article
All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride.
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- Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202000883
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- Article
All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing.
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- Advanced Electronic Materials, 2020, v. 6, n. 10, p. 1, doi. 10.1002/aelm.202000423
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- Article
Noble‐Metal‐Free Memristive Devices Based on IGZO for Neuromorphic Applications.
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- Advanced Electronic Materials, 2020, v. 6, n. 10, p. 1, doi. 10.1002/aelm.202000242
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- Article
High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition.
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- Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000195
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- Article
Interlayers for Improved Hole Injection in Organic Field‐Effect Transistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901352
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- Article
Metal–Semiconductor Field‐Effect Transistors Based on the Amorphous Multi‐Anion Compound ZnON.
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- Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901066
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- Article
2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900958
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- Article
High‐Mobility and Air‐Stable Amorphous Semiconductor Composed of Earth‐Abundant Elements: Amorphous Zinc Oxysulfide.
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- Advanced Electronic Materials, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1002/aelm.201900602
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- Article
Anomalous thermal effects in crystallization of hydrogenated amorphous alloys of the TiNi-TiCu system.
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- Technical Physics Letters, 2009, v. 35, n. 12, p. 1137, doi. 10.1134/S1063785009120190
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- Article
Microelectromechanical switches based on amorphous diamondlike carbon films.
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- Technical Physics Letters, 2009, v. 35, n. 8, p. 737, doi. 10.1134/S1063785009080148
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- Article
Mössbauer spectroscopy study of amorphous TbFeCo films for perpendicular magnetic data recording.
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- Technical Physics Letters, 2008, v. 34, n. 12, p. 1005, doi. 10.1134/S1063785008120043
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- Article
Elastic and inelastic properties of (Co<sub>0.45</sub>Fe<sub>0.45</sub>Zr<sub>0.1</sub>)<sub> x </sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1 − x </sub> nanocomposites.
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- Technical Physics Letters, 2008, v. 34, n. 6, p. 459, doi. 10.1134/S1063785008060035
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- Article
Effect of temperature on the formation of silicon nanoislands on noncrystalline substrates in microwave low-pressure gas discharge plasma.
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- Technical Physics Letters, 2008, v. 34, n. 1, p. 72, doi. 10.1134/S1063785008010227
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- Article
Effect of elastic interactions on the formation of silicon nanocrystals on noncrystalline substrates in microwave low-pressure gas discharge plasma.
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- Technical Physics Letters, 2007, v. 33, n. 4, p. 284, doi. 10.1134/S1063785007040049
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- Article
Thermal Effects in Amorphous YBaCuO Layers under High-Power Laser Action.
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- Technical Physics Letters, 2005, v. 31, n. 7, p. 591, doi. 10.1134/1.2001063
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- Article
The Influence of Moving Domain Walls on the Appearance of the Second Harmonic in the Magnetoimpedance Spectrum of a Cobalt-Based Amorphous Microwire.
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- Technical Physics Letters, 2003, v. 29, n. 11, p. 920, doi. 10.1134/1.1631364
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- Publication type:
- Article
Electron Transport in the Granular Amorphous Carbon Films with Cobalt Nanoparticles.
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- Technical Physics Letters, 2001, v. 27, n. 8, p. 659, doi. 10.1134/1.1398960
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- Article
Detection of Nitrogen Dioxide by Amorphous Films of Tungsten Trioxide.
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- Technical Physics Letters, 2000, v. 26, n. 2, p. 109, doi. 10.1134/1.1262758
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- Article
Stochastically induced hysteresis in optical carrier generation.
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- Technical Physics Letters, 1998, v. 24, n. 7, p. 541, doi. 10.1134/1.1262185
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- Publication type:
- Article
Time modulation of the input signal during recording of holograms on hydrogenated amorphous silicon–liquid crystal structures.
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- Technical Physics Letters, 1997, v. 23, n. 4, p. 303, doi. 10.1134/1.1261821
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- Article
Measurement of the amount of free and bound hydrogen in amorphous carbon.
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- Technical Physics Letters, 1997, v. 23, n. 1, p. 9, doi. 10.1134/1.1261626
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- Article
Dispersion of Plasma Oscillations in Amorphous Chalcogenide Semiconductors.
- Published in:
- Technical Physics, 2021, v. 66, n. 8, p. 938, doi. 10.1134/S1063784221060189
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- Article
Optical, Dielectric, and Conduction Properties of New Phosphorus-Modified Polysulfones.
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- Journal of Macromolecular Science: Physics, 2011, v. 50, n. 8, p. 1571, doi. 10.1080/00222348.2010.541848
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- Article
Emerging materials and transistors for integrated circuits.
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- National Science Review, 2024, v. 11, n. 3, p. 1, doi. 10.1093/nsr/nwae040
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- Article
Amorphous oxide semiconductor for monolithic 3D DRAM: an enabler or passer-by?
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- 2024
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- Publication type:
- Product Review
An Empirical Modeling of Gate Voltage-Dependent Behaviors of Amorphous Oxide Semiconductor Thin-Film Transistors including Consideration of Contact Resistance and Disorder Effects at Room Temperature.
- Published in:
- Membranes, 2021, v. 11, n. 12, p. 954, doi. 10.3390/membranes11120954
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- Article
Amorphous NdIZO Thin Film Transistors with Contact-Resistance-Adjustable Cu S/D Electrodes.
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- Membranes, 2021, v. 11, n. 5, p. 337, doi. 10.3390/membranes11050337
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- Article
Berry curvature contributions of kagome-lattice fragments in amorphous Fe–Sn thin films.
- Published in:
- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39112-1
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- Article