Works matching DE "ALUMINUM nitride"

Results: 1253

Defecation Warning Monitor Based on ScAlN Piezoelectric Ultrasonic Transducer (PMUT).

Published in:

Micromachines, 2025, v. 16, n. 5, p. 498, doi. 10.3390/mi16050498

By:

Yao, Tao;
Zong, Jianwei;
Zhang, Haoyue;
Hou, Zhiyuan;
Lou, Liang

Publication type:

Article

Ultra-wide-bandgap semiconductors: opportunities and challenges.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 225, doi. 10.1140/epjs/s11734-025-01528-9

By:

Zheng, Wei;
Guo, Daoyou;
Yuan, Ye

Publication type:

Article

Inspection of Bulk Crystals for Quality Control in Crystal Growth: Assessment of High-Energy X-Ray Transmission Topography and Back-Reflection Topography Pinpointed for Physical Vapor Transport-Grown Aluminum Nitride.

Published in:

Crystals (2073-4352), 2025, v. 15, n. 5, p. 449, doi. 10.3390/cryst15050449

By:

Weingärtner, Roland;
Epelbaum, Boris;
Lesnik, Andreas;
Lukin, Gleb;
Müller, Stephan;
Schiller, Leon;
Meissner, Elke;
Weisser, Matthias;
Besendörfer, Sven

Publication type:

Article

The Effects of Ceramic Substrate Materials on Thermoelectric Generator Performance.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4449, doi. 10.1007/s11664-025-11855-1

By:

Fagehi, Hassan

Publication type:

Article

Modeling and Characterization of Hybrid Thermo-Piezoelectric Cantilevers: Modeling and Characterization of Hybrid Thermo-Piezoelectric Cantilevers: E. Herth et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 5, p. 3760, doi. 10.1007/s11664-025-11836-4

By:

Herth, Etienne;
Cavalliers, Bruno;
Salhi, Sarra;
Kardous, Faten;
Fall, Dame;
Rousseau, Lionel;
Valbin, Laurie;
Lardet-Vieudrin, Franck

Publication type:

Article

A New Unified Analytical Expression for Entropy and its Application to Power Electronic Semiconductors: A New Unified Analytical Expression for Entropy and its Application to the Power Electronic...: Z. Dogan, T. Mehmetoglu.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2334, doi. 10.1007/s11664-024-11655-z

By:

Dogan, Zafer;
Mehmetoglu, Tural

Publication type:

Article

Tribological CCF-PEEK transfer film growth on cutting tool coating.

Published in:

Surface Engineering, 2022, v. 38, n. 4, p. 402, doi. 10.1080/02670844.2022.2095955

By:

Dong, Xin;
Dong, Chaoyang;
Zhao, Chunyue;
Wu, Bo

Publication type:

Article

Effects of coating cycles on spin-coated indium nitride thin films.

Published in:

Surface Engineering, 2018, v. 34, n. 7, p. 554, doi. 10.1080/02670844.2017.1376832

By:

Lee, Zhi Yin;
Ng, Sha Shiong;
Yam, Fong Kwong;
Hassan, Zainuriah

Publication type:

Article

Effects of temperature on PO and resistivity of ScAlN film.

Published in:

Surface Engineering, 2015, v. 31, n. 10, p. 775, doi. 10.1179/1743294415Y.0000000040

By:

Yang, YX.;
Li, XM.;
Zhou, D.;
Yang, CT.;
Feng, F.;
Yang, JS.;
Hu, QJ.

Publication type:

Article

Deposition of AlN on Nimonic 75 by PFD device.

Published in:

Surface Engineering, 2015, v. 31, n. 4, p. 265, doi. 10.1179/1743294415Y.0000000008

By:

Laktarashi, A.;
Habibi, M.;
Bordbar, S.

Publication type:

Article

Tribological improvement of titanium alloy surfaces through texturing and TiAlN coating.

Published in:

Surface Engineering, 2014, v. 30, n. 10, p. 758, doi. 10.1179/1743294414Y.0000000293

By:

Prem Ananth, M.;
Ramesh, R.

Publication type:

Article

Studies on thermal shock resistance of TiN and TiAlN coatings under pulsed laser irradiation.

Published in:

Surface Engineering, 2014, v. 30, n. 3, p. 195, doi. 10.1179/1743294413Y.0000000236

By:

Deng, J.;
Li, S.;
Xing, Y.;
Li, Y.

Publication type:

Article

Multiphase films bearing Ti2AlN by pulse plasma hollow cathode nitriding.

Published in:

Surface Engineering, 2013, v. 29, n. 5, p. 336, doi. 10.1179/1743294413Y.0000000124

By:

Cong, T;
Yan, M F;
Liu, R L

Publication type:

Article

Effect of deposition parameters on TiAlN coating using pulsed DC CFUBMS.

Published in:

Surface Engineering, 2013, v. 29, n. 4, p. 287, doi. 10.1179/1743294412Y.0000000091

By:

Mandal, P;
Beake, B D;
Paul, S

Publication type:

Article

Tribological behaviour of CrAlN coatings at 600°C.

Published in:

Surface Engineering, 2013, v. 29, n. 4, p. 318, doi. 10.1179/1743294412Y.0000000100

By:

Yu, C Y;
Wang, S B;
Li, T B;
Zhang, Z X

Publication type:

Article

Microstructure and nanoindentation hardness of TiN/AlN multilayer films prepared by pulsed laser deposition.

Published in:

Surface Engineering, 2012, v. 28, n. 3, p. 165, doi. 10.1179/026708410X12786785573238

By:

Tang, P H;
Song, R G;
Chai, G Z;
Mao, J

Publication type:

Article

Morphological investigation of aluminium nitride films on various substrates for MEMS applications.

Published in:

Surface Engineering, 2009, v. 25, n. 7, p. 526, doi. 10.1179/174329408X326407

By:

Kar, J. P.;
Bose, G.;
Tuli, S.;
Myoung, J. M.;
Mukherjee, S.

Publication type:

Article

Process–microstructure–properties relationship during formation of AlN layers by physical vapour deposition.

Published in:

Surface Engineering, 2006, v. 22, n. 2, p. 109, doi. 10.1179/174329406X98449

By:

Figueroa, U.;
Salas, O.;
Oseguera, J.

Publication type:

Article

The investigation of various type irradiation effects on aluminum nitride ceramic.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 8777, doi. 10.1007/s10854-019-01202-6

By:

Dukenbayev, K.;
Kozlovskiy, A.;
Alyamova, Z. A.;
Gladkikh, T.;
Kenzhina, I.;
Zdorovets, M.

Publication type:

Article

A new method for liquid-phase bonding of copper plates to aluminum nitride (AlN) substrates used in high-power modules.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 7, p. 6552, doi. 10.1007/s10854-019-00961-6

By:

Terasaki, Nobuyuki;
Ohashi, Touyou;
Nagatomo, Yoshiyuki;
Kuromitsu, Yoshirou;
Shirzadi, Amir A.

Publication type:

Article

Fabrication, characterization and electrochemical simulation of AlN-gate ISFET pH sensor.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 7, p. 7163, doi. 10.1007/s10854-019-01033-5

By:

Sinha, Soumendu;
Mukhiya, Ravindra;
Sharma, Rishi;
Khanna, P. K.;
Khanna, V. K.

Publication type:

Article

X-ray analysis for micro-structure of AlN/GaN multiple quantum well systems.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 1, p. 499, doi. 10.1007/s10854-018-0315-3

By:

Liubchenko, Oleksii I.;
Kladko, Vasyl P.;
Sabov, Tomash M.;
Dubikovskyi, Oleksandr V.

Publication type:

Article

The effect of Mg(NO3)2 addition on the formation of AlN nanowire by direct nitridation.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 24, p. 20688, doi. 10.1007/s10854-018-0208-5

By:

Kurtuldu, Fatih;
Gökçe, Azim;
Kurt, Ali Osman

Publication type:

Article

Electrical characteristics of atomic layer deposited AlN on n-InP.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 20, p. 17508, doi. 10.1007/s10854-018-9851-0

By:

Kim, Hogyoung;
Kim, Nam Do;
An, Sang Chul;
Choi, Byung Joon

Publication type:

Article

Research on hydrophobicity treatment of aluminum nitride powder and the fabrication and characterization of AlN/PTFE composite substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 17, p. 14890, doi. 10.1007/s10854-018-9627-6

By:

Yuan, Ying;
Chi, Zhifeng;
Tang, Bin;
Li, Enzhu;
Zhang, Shuren

Publication type:

Article

Enhanced SAW characteristics of <italic>a</italic>-plane AlN epitaxial films using ZnO buffer layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 5, p. 3912, doi. 10.1007/s10854-017-8330-3

By:

Fu, Sulei;
Li, Qi;
Wang, Minjuan;
Song, Cheng;
Zeng, Fei;
Pan, Feng

Publication type:

Article

The sputtering of AlN films on top of on- and off-axis 3C-SiC (111)/Si (111) substrates at various substrate temperatures.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 3, p. 2434, doi. 10.1007/s10854-017-8163-0

By:

Iqbal, A.;
Walker, G.;
Hold, L.;
Fernandes, A.;
Tanner, P.;
Iacopi, A.;
Mohd-Yasin, F.

Publication type:

Article

Comprehensive characterization of PVDF-TrFE thin films for microelectromechanical system applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 21, p. 15877, doi. 10.1007/s10854-017-7482-5

By:

Toprak, Alperen;
Tigli, Onur

Publication type:

Article

Novel single-host AlSiCN: Mn white phosphors for field emission displays.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 8405, doi. 10.1007/s10854-017-6558-6

By:

YuWen, Minghua;
Liu, Jiaqing;
Xia, Chao;
Liu, Ze;
Yu, Caiyan;
Li, Huili

Publication type:

Article

Effect of NHF additive on purification of AlN ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 9, p. 6731, doi. 10.1007/s10854-017-6368-x

By:

Wang, Dandan;
Wang, Chuanbin;
Li, Meijuan;
Shen, Qiang;
Zhang, Lianmeng

Publication type:

Article

Deposition of highly c-axis-oriented ScAlN thin films at different sputtering power.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 7, p. 5512, doi. 10.1007/s10854-016-6213-7

By:

Tang, Jialin;
Niu, Dongwei;
Tai, Zhiwei;
Hu, Xianwei

Publication type:

Article

Pre-oxidation of AlN substrates for subsequent metallization.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 8, p. 5910, doi. 10.1007/s10854-015-3160-7

By:

Yeh, Chun-Ting;
Tuan, Wei-Hsing

Publication type:

Article

A 2015 perspective on the nature of the steady-state and transient electron transport within the wurtzite phases of gallium nitride, aluminum nitride, indium nitride, and zinc oxide: a critical and retrospective review.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4475, doi. 10.1007/s10854-015-3055-7

By:

Siddiqua, Poppy;
Hadi, Walid;
Shur, Michael;
O'Leary, Stephen

Publication type:

Article

Synthesis and thermal analysis of aluminium nitride filled epoxy composites and its effective application as thermal interface material for LED applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 11, p. 4814, doi. 10.1007/s10854-014-2238-y

By:

Anithambigai, P.;
Mutharasu, D.;
Huong, L.;
Lacey, D.;
Zahner, T.

Publication type:

Article

Effect of AlN buffer layer on the microstructure and bandgap of AlN films deposited on sapphire substrates by pulsed laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 11, p. 4499, doi. 10.1007/s10854-013-1431-8

By:

He, Huan;
Huang, Lirong;
Xiao, Min;
Fu, Yuechun;
Shen, Xiaoming;
Zeng, Jianmin

Publication type:

Article

Morphology evolution, growth mechanism and optical properties of AlN nanostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 10, p. 4008, doi. 10.1007/s10854-013-1354-4

By:

Gao, Yuan;
Hu, Mingzhe;
Chu, Xiangcheng;
Yan, Qingfeng

Publication type:

Article

Optical properties of undoped and oxygen doped CuCl films on silicon substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 76, doi. 10.1007/s10854-007-9448-5

By:

Danieluk, Dominik;
Bradley, Ann L.;
Mitra, Anirban;
O'Reilly, Lisa;
Lucas, Olibanji F.;
Cowley, Aidan;
McNally, Patrick J.;
Foy, Barry;
McGlynn, Enda

Publication type:

Article

Sintering mechanisms in aluminum nitride with Y or Ca-containing additive.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 1, doi. 10.1007/s10854-008-9737-7

By:

Molisani, A. L.;
Yoshimura, H. N.;
Goldenstein, H.

Publication type:

Article

Initial process effects on the surface morphology and structural property of the AlN epilayers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 215, doi. 10.1007/s10854-008-9682-5

By:

Xiaohong Chen;
Shuping Li;
Junyong Kang

Publication type:

Article

Effect of inter-electrode spacing on structural and electrical properties of RF sputtered AlN films.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 3, p. 261, doi. 10.1007/s10854-007-9280-y

By:

Kar, J. P.;
Mukherjee, S.;
Bose, G.;
Tuli, S.

Publication type:

Article

Al/AlN layered composites by direct nitridation of aluminum.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 22, p. 1627, doi. 10.1023/A:1026305112696

By:

Hall, B. J.;
Schaffer, G. B.;
Ning, Z.;
Mcphee, W. A. G.;
Miller, D. N.;
Drennan, J.;
Cumming, D. J.

Publication type:

Article

Effects of organic additives on viscosity of aqueous tape-casting aluminum nitride slurries.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 8, p. 589, doi. 10.1023/A:1023394211982

By:

Xiao-Jun Luo;
Xin-Rui Xu;
Wen-Lan Li;
Han-Rui Zhuang

Publication type:

Article

Improving thermal conductivity of epoxy composite by three-dimensional filler network constructed with two different diameters aluminum nitride and cellulose nanofiber.

Published in:

Cellulose, 2024, v. 31, n. 4, p. 2461, doi. 10.1007/s10570-024-05737-8

By:

Yang, Wonyoung;
Kim, Jihoon;
Kim, Jooheon

Publication type:

Article

Dependence of the Density of Entropy Production on the Rate of Changes in Temperature in the Linear Mode of Thermodynamics on the Examples of Graphite and Aluminum and Boron Nitrides.

Published in:

Measurement Techniques, 2019, v. 62, n. 4, p. 354, doi. 10.1007/s11018-019-01629-7

By:

Kostanovskii, A. V.;
Kostanovskaya, M. E.

Publication type:

Article

Heating-induced transformation of pseudoboehmite and a mixture of pseudoboehmite, aluminum nitride, and aluminum oxide.

Published in:

Inorganic Materials, 2015, v. 51, n. 7, p. 641, doi. 10.1134/S002016851507002X

By:

Alikhanian, A.;
Ketsko, V.;
Beresnev, E.;
Smirnova, M.;
Simonenko, N.;
Nikiforova, G.;
Steblevskii, A.;
Goeva, L.;
Kop'eva, M.

Publication type:

Article

Combustion synthesis of submicron AlN particles.

Published in:

Inorganic Materials, 2015, v. 51, n. 6, p. 566, doi. 10.1134/S0020168515060187

By:

Zakorzhevskii, V.;
Borovinskaya, I.

Publication type:

Article

Effect of dopant concentration on the phase composition and luminescence properties of Eu- and Ce-doped AlONs.

Published in:

Inorganic Materials, 2015, v. 51, n. 5, p. 473, doi. 10.1134/S0020168515050015

By:

Akhmadullina, N.;
Lysenkov, A.;
Ashmarin, A.;
Kargin, Yu.;
Ishchenko, A.;
Yagodin, V.;
Shul'gin, B.

Publication type:

Article

Composition, structure, and dielectric properties of SiC-AlN ceramic materials.

Published in:

Inorganic Materials, 2013, v. 49, n. 1, p. 57, doi. 10.1134/S0020168513010135

By:

Safaraliev, G.;
Shabanov, Sh.;
Sadykov, S.;
Bilalov, B.;
Agalarov, A.

Publication type:

Article

Hot-pressed SiN ceramics containing CaO-AlO-AlN modifying additives.

Published in:

Inorganic Materials, 2012, v. 48, n. 11, p. 1158, doi. 10.1134/S0020168512110039

By:

Kargin, Yu.;
Lysenkov, A.;
Ivicheva, S.;
Zakorzhevskii, V.;
Borovinskaya, I.;
Kutsev, S.;
Solntsev, K.

Publication type:

Article

Reactions of VO, NbO, and TaO with AlN.

Published in:

Inorganic Materials, 2011, v. 47, n. 3, p. 267, doi. 10.1134/S0020168511030071

By:

Chumarev, V.;
Mar'evich, V.;
Larionov, A.;
Dubrovskii, A.

Publication type:

Article