Works matching DE "SEMICONDUCTOR technology"

Results: 467

Design and Optimization of Multiple-Channel Double Dynamic Switching Biased Op-Amp for Switched Capacitor Integrator Using FinFET Technology.

Published in:

Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials, 2025, v. 55, n. 1, p. 55, doi. 10.33180/InfMIDEM2025.105

By:

Far, Morteza Babaeian;
Ormancı, Mehmet Aytuğ;
Kaçar, Fırat

Publication type:

Article

Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated...: Tien-Han Yu et al

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 2, p. 1096, doi. 10.1007/s11664-024-11600-0

By:

Yu, Tien-Han;
Chen, Yu-Lin;
Tsao, Yi-Fan;
Hsu, Chin-Tsai;
Lu, Tsan-Feng;
Hsu, Heng-Tung

Publication type:

Article

Selective One‐Pot Syntheses of Mixed Silicon‐Germanium Heteroadamantane Clusters.

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 58, p. 14401, doi. 10.1002/chem.202102732

By:

Köstler, Benedikt;
Bolte, Michael;
Lerner, Hans‐Wolfram;
Wagner, Matthias

Publication type:

Article

Evolutions of bonding wires used in semiconductor electronics: perspective over 25 years.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4412, doi. 10.1007/s10854-015-2892-8

By:

Gan, Chong;
Hashim, U.

Publication type:

Article

GET 212-2023 State Primary Standard for the mass concentration units of oxygen, hydrogen, and carbon dioxide in liquid media.

Published in:

Measurement Techniques, 2023, v. 66, n. 8, p. 562, doi. 10.1007/s11018-023-02268-9

By:

Stakheev, A. A.;
Dobrovolskiy, V. I.;
Stolboushkina, T. P.

Publication type:

Article

Definition of Weber-Ampere Characteristics of Electrical Devices by the Natural-Model Experiment Method.

Published in:

Measurement Techniques, 2016, v. 59, n. 7, p. 747, doi. 10.1007/s11018-016-1041-y

By:

Gorbatenko, N.;
Grechikhin, V.;
Lankin, M.;
Lankin, A.

Publication type:

Article

Using state machines to model the Ion Torrent sequencing process and to improve read error rates.

Published in:

Bioinformatics, 2013, v. 29, n. 13, p. i344, doi. 10.1093/bioinformatics/btt212

By:

Golan, David;
Medvedev, Paul

Publication type:

Article

Review of Industrialization Development of Nanoimprint Lithography Technology.

Published in:

Chips, 2025, v. 4, n. 1, p. 10, doi. 10.3390/chips4010010

By:

Cao, Yuanxun;
Ma, Dayong;
Li, Haiming;
Cui, Guangxu;
Zhang, Jie;
Yang, Zhiwei

Publication type:

Article

氮化镓固态功率放大器发展概述.

Published in:

Electronic Science & Technology, 2023, v. 36, n. 8, p. 65, doi. 10.16180/j.cnki.issn1007-7820.2023.08.010

By:

谢红星;
路宏敏;
刘亮;
任永达;
李敏;
张嘉海

Publication type:

Article

A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency.

Published in:

International Journal of Energy Research, 2023, p. 1, doi. 10.1155/2023/8195624

By:

Rehman, Malik Abdul;
Kim, Minjae;
Pawar, Sachin A.;
Park, Sewon;
Nasir, Naila;
Kim, Dong-eun;
Khan, Mohammad Farooq;
Nguyen, Van Huy;
Chabungbam, Akendra Singh;
Seo, Yongho;
Sakurai, Takeaki;
Chun, Seung-Hyun;
Koo, Do Hyoung;
Lee, Chul-Ho;
Jun, Seong Chan;
Park, Hyung-Ho

Publication type:

Article

Reconfigurable Complementary and Combinational Logic Based on Monolithic and Single‐Crystalline Al‐Si Heterostructures.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200567

By:

Böckle, Raphael;
Sistani, Masiar;
Bažíková, Martina;
Wind, Lukas;
Sadre‐Momtaz, Zahra;
den Hertog, Martien I.;
Murphey, Corban G. E.;
Cahoon, James F.;
Weber, Walter M.

Publication type:

Article

Flexible Active Crossbar Arrays Using Amorphous Oxide Semiconductor Technology toward Artificial Neural Networks Hardware.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200642

By:

Pereira, Maria Elias;
Deuermeier, Jonas;
Figueiredo, Cátia;
Santos, Ângelo;
Carvalho, Guilherme;
Tavares, Vítor Grade;
Martins, Rodrigo;
Fortunato, Elvira;
Barquinha, Pedro;
Kiazadeh, Asal

Publication type:

Article

High‐Performance p‐type 2D FET Based on Monolayer GeC with High Hole Mobility: A DFT‐NEGF Study.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200388

By:

Yang, Jialin;
Chen, Chuyao;
Zhang, Jingwen;
Zhou, Wenhan;
Qu, Hengze;
Li, Jing;
Guo, Tingting;
Shi, Xiaoqin;
Wu, Zhenhua;
Zhang, Shengli

Publication type:

Article

Non‐Volatile Photo‐Switch Using a Diamond pn Junction.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100542

By:

Masante, Cédric;
Kah, Martin;
Hébert, Clément;
Rouger, Nicolas;
Pernot, Julien

Publication type:

Article

Frontiers in Electronic and Optoelectronic Devices Based on 2D Materials.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100444

By:

Fu, Jianye;
Qiu, Meng;
Bao, Wenzhong;
Zhang, Han

Publication type:

Article

Quantum Transport in Monolayer α‐CS Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001169

By:

Guo, Shiying;
Zhou, Wenhan;
Qu, Hengze;
Zhang, Shengli;
Liu, Wenqiang;
Liu, Gaoyu;
Xia, Xinyan;
Song, Xiufeng;
Zeng, Haibo

Publication type:

Article

Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 3, p. 1, doi. 10.1002/aelm.201901281

By:

Zhou, Wenhan;
Zhang, Shengli;
Wang, Yangyang;
Guo, Shiying;
Qu, Hengze;
Bai, Pengxiang;
Li, Zhi;
Zeng, Haibo

Publication type:

Article

2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800944

By:

Hou, Xiang;
Chen, Huawei;
Zhang, Zhenhan;
Wang, Shuiyuan;
Zhou, Peng

Publication type:

Article

What Will Come After V‐NAND—Vertical Resistive Switching Memory?

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 9, p. N.PAG, doi. 10.1002/aelm.201800914

By:

Yoon, Kyung Jean;
Kim, Yumin;
Hwang, Cheol Seong

Publication type:

Article

High Performance OTFTs Fabricated Using a Calamitic Liquid Crystalline Material of 2‐(4‐Dodecyl phenyl)[1]benzothieno[3,2‐b][1]benzothiophene.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600179

By:

He, Yaowu;
Sezen, Melda;
Zhang, Dongwei;
Li, Aiyuan;
Yan, Lijia;
Yu, Hongtao;
He, Chao;
Goto, Osamu;
Loo, Yueh‐Lin;
Meng, Hong

Publication type:

Article

Magnetoresistance Amplification Effect in Silicon Transistor Device.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 9, p. 1, doi. 10.1002/aelm.201600174

By:

Wang, Tao;
Yang, Dezheng;
Si, Mingsu;
Wang, Fangcong;
Zhou, Shiming;
Xue, Desheng

Publication type:

Article

Controllable Burst-Mode Nd 3+ :YAG/Cr 4+ :YAG Laser Pumped by 808 nm Polarization-Combined Laser Diodes.

Published in:

Photonics, 2025, v. 12, n. 3, p. 202, doi. 10.3390/photonics12030202

By:

Dang, Xincheng;
Zhang, Nihui;
Wang, Hai;
Xin, Di;
Li, Tongtong;
Zhang, Weiqiao;
Zhou, Xuyan;
Zheng, Wanhua;
Zhang, Hongbo

Publication type:

Article

Recent Advances in Homogeneous Integration of Emitting Structures on a Silicon Platform.

Published in:

Photonics, 2025, v. 12, n. 2, p. 141, doi. 10.3390/photonics12020141

By:

Kovalev, Michael;
Podlesnykh, Ivan;
Krasin, George;
Dolzhenko, Nikita;
Kudryashov, Sergey

Publication type:

Article

Computational Optical Scanning Holography.

Published in:

Photonics, 2024, v. 11, n. 4, p. 347, doi. 10.3390/photonics11040347

By:

Yoneda, Naru;
Liu, Jung-Ping;
Matoba, Osamu;
Saita, Yusuke;
Nomura, Takanori

Publication type:

Article

一种 Ka 频段高密度高集成瓦式 T 组件的设计.

Published in:

Telecommunication Engineering, 2021, v. 61, n. 3, p. 373, doi. 10.3969/j.issn.1001-893x.2021.03.018

By:

罗鑫

Publication type:

Article

Journal of Chongqing University of Posts & Telecommunications (Natural Science Edition) / Chongqing Youdian Daxue Xuebao (Ziran Kexue Ban), 2021, v. 33, n. 6, p. 885, doi. 10.3979/j.issn.1673-825X.202109270341

By:

郝跃

Publication type:

Article

57.3: Distinguished Paper: New Pixel Circuits for Controlling Threshold Voltage by Back-gate Bias Voltage using Crystalline Oxide Semiconductor FETs.

Published in:

SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 857, doi. 10.1002/sdtp.10363

By:

Kaneyasu, Makoto;
Toyotaka, Kouhei;
Shishido, Hideaki;
Isa, Toshiyuki;
Eguchi, Shingo;
Miyake, Hiroyuki;
Hirakata, Yoshiharu;
Yamazaki, Shunpei;
Dobashi, Masayoshi;
Fujiwara, Chieko

Publication type:

Article

Low dimensional freestanding semiconductors for flexible optoelectronics: materials, synthesis, process, and applications.

Published in:

Materials Research Letters, 2020, v. 8, n. 4, p. 123, doi. 10.1080/21663831.2020.1718231

By:

Seo, Jung-Hun;
Swinnich, Edward;
Zhang, Yi-Yu;
Kim, Munho

Publication type:

Article

Stability of Naturally Relevant Ternary Phases in the Cu–Sn–S System in Contact with an Aqueous Solution.

Published in:

Minerals (2075-163X), 2016, v. 6, n. 3, p. 79, doi. 10.3390/min6030079

By:

Giaccherini, Andrea;
Montegrossi, Giordano;
Di Benedetto, Francesco

Publication type:

Article

Mitigation of Uncertainties in Wind-Powered Renewable Systems for Environmental Assets.

Published in:

Polish Journal of Environmental Studies, 2017, v. 26, n. 1, p. 253, doi. 10.15244/pjoes/64457

By:

Pragaspathy, Subramani;
Baskaran, Anand

Publication type:

Article

Impedance Spectroscopy: A Versatile Technique to Understand Solution‐Processed Optoelectronic Devices.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800580

By:

Ali, Shmshad;
Chang, Shuai;
Imran, Muhammad;
Shi, Qingfan;
Chen, Yu;
Zhong, Haizheng

Publication type:

Article

Optimization of SRAM Cell Using 32 nm FinFET Technology.

Published in:

IUP Journal of Telecommunications, 2019, v. 11, n. 2, p. 57

By:

Mamta;
Grewal, Surender Kumar

Publication type:

Article

HIGH ENERGY MICROWAVE WEAPON - ЕLECTROMAGNETIC BOMB.

Published in:

Military Technical Courier / Vojnotehnicki Glasnik, 2021, v. 69, n. 2, p. 499, doi. 10.5937/vojtehg69-29007

By:

Banjac, Goran M.;
Đorđević, Vladimir D.;
Živković, Miladin Z.;
Ferdjalid, Abdellah

Publication type:

Article

The development of a monitoring system for analyzing factors affecting film thickness in a sputtering process.

Published in:

Modern Physics Letters B, 2020, v. 34, n. 7-9, p. N.PAG, doi. 10.1142/S0217984920400217

By:

Chou, Cheng-Hsueh;
Lin, You-Teh;
Shinde, Swapnil;
Huang, Ci-En;
Wu, Tsung-Chien;
Lin, Keh-Moh;
Hsiao, Wen-Tse

Publication type:

Article

Developing the Ferromagnetic Feature of ZnS:Cr Nanoparticles by Er Co-doping.

Published in:

Journal of Superconductivity & Novel Magnetism, 2023, v. 36, n. 6, p. 1595, doi. 10.1007/s10948-023-06596-3

By:

Poornaprakash, B.;
Puneetha, Peddathimula;
Ramu, S.;
Reddy, M. Siva Pratap;
Sangaraju, Sambasivam;
Rosaiah, P.;
El-marghany, Adel;
Lee, Dong-Yeon;
Kim, Y. L.

Publication type:

Article

All dielectric chiral metasurface for wideband asymmetric transmission of linearly polarized waves.

Published in:

Optical & Quantum Electronics, 2025, v. 57, n. 5, p. 1, doi. 10.1007/s11082-025-08201-4

By:

Hamed, Amira J.;
Elsayed, Omar M. A.;
Darweesh, M. Saeed;
Mahmoud, Ahmed M.

Publication type:

Article

Recognition and ranking using similarity on defective wafer bin maps.

Published in:

International Journal of Advanced Manufacturing Technology, 2025, v. 138, n. 5, p. 2139, doi. 10.1007/s00170-025-15685-7

By:

Kwon, YoungWook;
Oh, SuMin;
Kim, HyunJin

Publication type:

Article

Analytical prediction of subsurface damage depth of monocrystalline silicon in ultrasonic vibration assisted wire sawing.

Published in:

International Journal of Advanced Manufacturing Technology, 2024, v. 133, n. 5/6, p. 2445, doi. 10.1007/s00170-024-13846-8

By:

Wang, Yan;
Bai, Tianqi;
Shu, Li;
Su, Jinhuan;
Xu, Kangwei

Publication type:

Article

Material removal rate of double-faced mechanical polishing of 4H-SiC substrate.

Published in:

International Journal of Advanced Manufacturing Technology, 2022, v. 118, n. 11/12, p. 3983, doi. 10.1007/s00170-021-08186-w

By:

Zhang, Peng;
Yang, Jingfang;
Qiu, Huadong

Publication type:

Article

防护服用供气背包制冷装置结构设计与性能试验.

Published in:

Fluid Machinery, 2024, v. 52, n. 8, p. 1, doi. 10.3969/j.issn.l005-0329.2024.08.001

By:

李希萌;
索槐;
任建强;
李岳;
蔡庆明;
侯雨雷;
曾达幸

Publication type:

Article

Study of Lattice Vibrations of the Stanene Along Highly Symmetry Directions.

Published in:

Nanosistemi, Nanomateriali, Nanotehnologii, 2023, v. 21, n. 1, p. 1, doi. 10.15407/nnn.21.01.001

By:

Kumar, Kamlesh;
Aziz, M. Imran;
Mishra, Rahul Kumar

Publication type:

Article

Grazing-Angle Fiber-to-Waveguide Coupler.

Published in:

Photonics, 2022, v. 9, n. 11, p. 799, doi. 10.3390/photonics9110799

By:

Seong, Yeolheon;
Kim, Jinwook;
Shin, Heedeuk

Publication type:

Article

Enhancing CuFP Library with Self-Alignment Technique.

Published in:

Computers (2073-431X), 2025, v. 14, n. 4, p. 118, doi. 10.3390/computers14040118

By:

Hajizadeh, Fahimeh;
Ould-Bachir, Tarek;
David, Jean Pierre

Publication type:

Article

광 주입 파장 잠금 반도체 레이저를 이용한 광학 복소 신호 생성시의 주입 매개 변수 정확도 향상.

Published in:

Journal of the Korea Institute of Information & Communication Engineering, 2021, v. 25, n. 3, p. 478, doi. 10.6109/jkiice.2021.25.3.478

By:

조준형;
성혁기

Publication type:

Article

Optimizing Gallium Nitride (GaN) Based SOI-TF-FinFETs for Enhanced Linearity and Low Distortion in High-Frequency Applications.

Published in:

Indian Journal of Pure & Applied Physics, 2025, v. 63, n. 2, p. 161, doi. 10.56042/ijpap.v63i2.14928

By:

Srivastava, Praween Kumar;
Kumar, Atul;
Kumar, Ajay

Publication type:

Article

Characteristic analysis of volatile avalanche diode threshold switching for bionic nerve synapse applications.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-00594-y

By:

Wang, Yang;
Zhong, Zeyu;
Jin, Xiangliang;
Peng, Yan;
Luo, Jun

Publication type:

Article

Faceting of Si and Ge crystals grown on deeply patterned Si substrates in the kinetic regime: phase-field modelling and experiments.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-98285-1

By:

Albani, Marco;
Bergamaschini, Roberto;
Barzaghi, Andrea;
Salvalaglio, Marco;
Valente, Joao;
Paul, Douglas J.;
Voigt, Axel;
Isella, Giovanni;
Montalenti, Francesco

Publication type:

Article

The Strategies in Global Semiconductor Industry: The SWOT Analysis of Samsung Electronics Company.

Published in:

American Journal of Management, 2021, v. 21, n. 2, p. 107, doi. 10.33423/ajm.v21i2.4231

By:

Hidiroglu, Duygu

Publication type:

Article

A new dimension for magnetosensitive e-skins: active matrix integrated micro-origami sensor arrays.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-29802-7

By:

Becker, Christian;
Bao, Bin;
Karnaushenko, Dmitriy D.;
Bandari, Vineeth Kumar;
Rivkin, Boris;
Li, Zhe;
Faghih, Maryam;
Karnaushenko, Daniil;
Schmidt, Oliver G.

Publication type:

Article

The speed limit of optoelectronics.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-29252-1

By:

Ossiander, M.;
Golyari, K.;
Scharl, K.;
Lehnert, L.;
Siegrist, F.;
Bürger, J. P.;
Zimin, D.;
Gessner, J. A.;
Weidman, M.;
Floss, I.;
Smejkal, V.;
Donsa, S.;
Lemell, C.;
Libisch, F.;
Karpowicz, N.;
Burgdörfer, J.;
Krausz, F.;
Schultze, M.

Publication type:

Article