Works matching DE "INDIUM nitride"

Results: 95

Effects of coating cycles on spin-coated indium nitride thin films.

Published in:

Surface Engineering, 2018, v. 34, n. 7, p. 554, doi. 10.1080/02670844.2017.1376832

By:

Lee, Zhi Yin;
Ng, Sha Shiong;
Yam, Fong Kwong;
Hassan, Zainuriah

Publication type:

Article

Fabrication of InN based photodetector using porous silicon buffer layer.

Published in:

Surface Engineering, 2013, v. 29, n. 10, p. 772, doi. 10.1179/1743294413Y.0000000189

By:

Amirhoseiny, M.;
Hassan, Z.;
Ng, S. S.

Publication type:

Article

Comparative study on structural and optical properties of nitrogen rich InN on Si(110) and 6H-SiC.

Published in:

Surface Engineering, 2013, v. 29, n. 7, p. 561, doi. 10.1179/1743294413Y.0000000157

By:

Amirhoseiny, M;
Hassan, Z;
Ng, S S

Publication type:

Article

A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 13, p. 9228, doi. 10.1007/s10854-017-6657-4

By:

Bashir, Umar;
Hassan, Zainuriah;
Ahmed, Naser

Publication type:

Article

An analytical model of low field and high field electron mobility in wurtzite indium nitride.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 11, p. 11353, doi. 10.1007/s10854-016-5259-x

By:

Wang, Shulong;
Liu, Hongxia;
Chen, Qing;
Zhang, Hailin

Publication type:

Article

Morphology evolution of nano-structured InN grown by MOMBE.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 4285, doi. 10.1007/s10854-015-2980-9

By:

Kuo, Shou-Yi;
Chen, Wei-Chun;
Yang, Jui-Fu;
Hsiao, Chien-Nan;
Lai, Fang-I

Publication type:

Article

Influences of hetero-junction buffer layers and substrates on polarity of PA-MBE grown InN films.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 4, p. 2480, doi. 10.1007/s10854-015-2709-9

By:

Fan, Jenn-Chyuan;
Lo, Yun-Yo;
Huang, Man-Fang;
Chen, Wei-Chi;
Liu, Chien-Chen;
Lee, C.;
Chiang, Yu-Chia

Publication type:

Article

The effective role of time in synthesising InN by chemical method at low temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 3, p. 1376, doi. 10.1007/s10854-014-1737-1

By:

Qaeed, M.;
Ibrahim, K.;
Saron, K.;
Abdullah, Q.;
Elfadill, Nezar;
Abud, Saleh;
Chahrour, Khaled

Publication type:

Article

Morphology Controlled Fabrication of InN Nanowires on Brass Substrates.

Published in:

Nanomaterials (2079-4991), 2016, v. 6, n. 11, p. 195, doi. 10.3390/nano6110195

By:

Huijie Li;
Guijuan Zhao;
Lianshan Wang;
Zhen Chen;
Shaoyan Yang

Publication type:

Article

Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111) Substrates.

Published in:

Advances in Condensed Matter Physics, 2016, p. 1, doi. 10.1155/2016/9435387

By:

Guo, Yao;
Jia, Taixuan;
Li, Chengbo;
Niu, Yongsheng;
Hou, Shaogang;
Liu, Shuanjiang

Publication type:

Article

Relative humidity sensing properties of indium nitride compound with oxygen doping on silicon and AAO substrates.

Published in:

Modern Physics Letters B, 2019, v. 33, n. 14/15, p. N.PAG, doi. 10.1142/S021798491940044X

By:

Yang, Chih Chin;
Liu, Ting Hao;
Chang, Shun Hsyung

Publication type:

Article

A Comparative Study of Violet InGaN Double Quantum Well Lasers with 1.89 and 0.80 eV InN Bandgap Energies.

Published in:

Lasers in Engineering (Old City Publishing), 2016, v. 34, n. 1-3, p. 183

By:

ALAHYARIZADEH, G.;
AMIRHOSEINY, M.;
RAHMANI, R.;
HASSAN, Z.

Publication type:

Article

Experimental investigation of indium tin oxide and indium nitride based fiber optic surface plasmon resonance sensor.

Published in:

Optical & Quantum Electronics, 2023, v. 55, n. 13, p. 1, doi. 10.1007/s11082-023-05366-8

By:

Kapoor, Vicky;
Sharma, Navneet K.

Publication type:

Article

Investigation of line-shaped CO2 laser annealing on InN/AlN/sapphire substrates.

Published in:

International Journal of Advanced Manufacturing Technology, 2022, v. 120, n. 9/10, p. 5687, doi. 10.1007/s00170-022-09130-2

By:

Tseng, Shih-Feng;
Wang, Chun-Jen;
Chen, Wei-Chun

Publication type:

Article

Minimization of the performance degradation of laser parameters with operating time of quantum dot laser using indium nitride.

Published in:

Physics Essays, 2015, v. 28, n. 1, p. 134, doi. 10.4006/0836-1398-28.1.134

By:

Humayun, M. A.;
Rashid, M. A.;
Malek, F.;
Namihira, Y.

Publication type:

Article

Minimization of the performance degradation of laser parameters with operating time of quantum dot laser using indium nitride.

Published in:

Physics Essays, 2015, v. 28, n. 1, p. 134, doi. 10.4006/0836-1398-28.1.134

By:

Humayun, M. A.;
Rashid, M. A.;
Malek, F.;
Namihira, Y.

Publication type:

Article

Strong tribo-piezoelectric effect in bilayer indium nitride (InN).

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-98130-5

By:

Islam, Md. Sherajul;
Zamil, Md. Yasir;
Mojumder, Md. Rayid Hasan;
Stampfl, Catherine;
Park, Jeongwon

Publication type:

Article

Photothermal CO 2 Hydrogenation to Methanol over Ni-In 2 O 3 /g-C 3 N 4 Heterojunction Catalysts.

Published in:

Catalysts (2073-4344), 2024, v. 14, n. 11, p. 756, doi. 10.3390/catal14110756

By:

Shan, Xuekai;
Zhang, Guolin;
Zhang, Ying;
Zhang, Shuobo;
Guo, Fang;
Xu, Qi

Publication type:

Article

Quantum Efficiency of Gallium Nitride-Based Heterostructures with GaInN Quantum Wells.

Published in:

Semiconductors, 2018, v. 52, n. 15, p. 1925, doi. 10.1134/S1063782618150149

By:

Vigdorovich, E. N.

Publication type:

Article

Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire.

Published in:

Semiconductors, 2016, v. 50, n. 4, p. 478, doi. 10.1134/S1063782616040102

By:

El Ghazi, Haddou;
Jorio, Anouar

Publication type:

Article

Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 261, doi. 10.1134/S1063782616020159

By:

Lobanov, D.;
Novikov, A.;
Andreev, B.;
Bushuykin, P.;
Yunin, P.;
Skorohodov, E.;
Krasilnikova, L.

Publication type:

Article

Temperature switching of cavity modes in InN microcrystals.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1435, doi. 10.1134/S1063782615110111

By:

Kazanov, D.;
Kaibyshev, V.;
Davydov, V.;
Smirnov, A.;
Jmerik, V.;
Kuznetsova, N.;
Kopiev, P.;
Ivanov, S.;
Shubina, T.

Publication type:

Article

The Effect of Pressure on Band Parameters and Optical Characteristics in Indium Nitride.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 7, p. 3758, doi. 10.1007/s11664-022-09624-5

By:

Saib, Salima;
Bouarissa, Nadir

Publication type:

Article

High Radiative Recombination Rate of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with AlInGaN/AlInN/AlInGaN Tunnel Electron Blocking Layer.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 10, p. 5612, doi. 10.1007/s11664-021-09086-1

By:

Jamil, Tariq;
Usman, Muhammad;
Jamal, Habibullah;
Khan, Sibghatullah;
Rasheed, Saad;
Ali, Shazma

Publication type:

Article

Changes of the Physical Properties of Sputtered InGaN Thin Films Under Small Nitrogen Gas Flow Variations.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 5, p. 2924, doi. 10.1007/s11664-019-07042-8

By:

Erdoğan, Erman;
Kundakçı, Mutlu

Publication type:

Article

Study of Stark Effect in n-doped 1.55 μm InN0.92yP1−1.92yBiy/InP MQWs.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4757, doi. 10.1007/s11664-018-6368-5

By:

Bilel, C.;
Chakir, K.;
Rebey, A.;
Alrowaili, Z. A.

Publication type:

Article

Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Robust Schottky Contacts.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 12, p. 6305, doi. 10.1007/s11664-016-5030-3

By:

Harotoonian, Vache;
Woodall, Jerry

Publication type:

Article

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2013, doi. 10.1007/s11664-015-4175-9

By:

Jia, Ye;
Wallace, Joshua;
Qin, Yueling;
Gardella, Joseph;
Dabiran, Amir;
Singisetti, Uttam

Publication type:

Article

Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 1, p. 188, doi. 10.1007/s11664-014-3494-6

By:

Mickevičius, J.;
Aleknavičius, J.;
Stanionytė, S.;
Kadys, A.;
Malinauskas, T.;
Grinys, T.;
Dmukauskas, M.;
Tomašiūnas, R.;
Selskis, A.;
Kondrotas, R.;
Lugauer, H.;
Strassburg, M.

Publication type:

Article

Study of InAlN thin films deposited on silicon, ITO/PET, and ITO/GLASS substrates at room temperature for its possible use in solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 3, p. 1162, doi. 10.1007/s10854-021-07398-w

By:

Nieto, L. F. Mulcue;
Saldarriaga, W.;
de la Cruz, W.;
Restrepo, E.;
Ospina, M. S.;
Escobar, D.

Publication type:

Article

On the Determination of Elastic Properties of Indium Nitride Nanosheets and Nanotubes by Numerical Simulation.

Published in:

Metals (2075-4701), 2023, v. 13, n. 1, p. 73, doi. 10.3390/met13010073

By:

Sakharova, Nataliya A.;
Pereira, André F. G.;
Antunes, Jorge M.;
Chaparro, Bruno M.;
Fernandes, José V.

Publication type:

Article

Effect of film thickness on morphological, structural and electrical properties of InAlN thin layers grown on glass at room temperature.

Published in:

Applied Physics A: Materials Science & Processing, 2021, v. 127, n. 6, p. 1, doi. 10.1007/s00339-021-04618-2

By:

Mulcue, L. F.;
de la Cruz, W.;
Saldarriaga, W.

Publication type:

Article

Performance investigation of steep-slope core–shell nanotube indium nitride electron–hole bilayer tunnel field effect transistor.

Published in:

Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 6, p. N.PAG, doi. 10.1007/s00339-019-2700-z

By:

Ahangari, Zahra

Publication type:

Article

Generation of light-induced surface current in c-oriented InN epitaxial layers.

Published in:

Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 2, p. 1, doi. 10.1007/s00339-018-2374-y

By:

Barick, B. K.;
Deb, S.;
Dhar, S.

Publication type:

Article

Surface-enhanced Raman spectroscopy using 2D plasmons of InN nanostructures.

Published in:

Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 6, p. 1, doi. 10.1007/s00339-018-1845-5

By:

Madapu, Kishore K.;
Dhara, Sandip

Publication type:

Article

Generation of ultra-small InN nanocrystals by pulsed laser ablation of suspension in organic solution.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 3, p. 1, doi. 10.1007/s00339-017-0834-4

By:

Kurşungöz, Canan;
Uzcengiz Şimşek, Elif;
Tuzaklı, Refik;
Ortaç, Bülend

Publication type:

Article

Two intermediate bands solar cells of InGaN/InN quantum dot supracrystals.

Published in:

Applied Physics A: Materials Science & Processing, 2014, v. 116, n. 3, p. 1009, doi. 10.1007/s00339-014-8296-4

By:

Wei, Wensheng;
Zhang, Qiubo;
Zhao, Shaoyun;
Zhang, Yaoju

Publication type:

Article

The Effect of Imbalanced Carrier Transport on the Efficiency Droop in GaInN-Based Blue and Green Light-Emitting Diodes.

Published in:

Energies (19961073), 2017, v. 10, n. 9, p. 1277, doi. 10.3390/en10091277

By:

Jun Hyuk Park;
Jaehee Cho;
Schubert, E. Fred;
Jong Kyu Kim

Publication type:

Article

First principles calculations of structural, electronic and optical properties of compound.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2015, v. 29, n. 5, p. -1, doi. 10.1142/S0217979215500289

By:

Graine, R.;
Chemam, R.;
Gasmi, F. Z.;
Nouri, R.;
Meradji, H.;
Khenata, R.

Publication type:

Article

PHOTOCONDUCTORS ON DIFFERENT ORIENTATIONS OF SUBSTRATES.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2012, v. 26, n. 31, p. 1250137-1, doi. 10.1142/S0217979212501378

By:

AMIRHOSEINY, M.;
HASSAN, Z.;
NG, S. S.;
CHUAH, L. S.;
AHMAD, M. A.;
YUSOF, Y.

Publication type:

Article

Growth and Characterization of Sputtered InAlN Nanorods on Sapphire Substrates for Acetone Gas Sensing.

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 1, p. 26, doi. 10.3390/nano14010026

By:

Horng, Ray-Hua;
Cho, Po-Hsiang;
Chang, Jui-Che;
Singh, Anoop Kumar;
Jhang, Sheng-Yuan;
Liu, Po-Liang;
Wuu, Dong-Sing;
Bairagi, Samiran;
Chen, Cheng-Hsu;
Järrendahl, Kenneth;
Hsiao, Ching-Lien

Publication type:

Article

Enhancement of InN Luminescence by Introduction of Graphene Interlayer.

Published in:

Nanomaterials (2079-4991), 2019, v. 9, n. 3, p. 417, doi. 10.3390/nano9030417

By:

Dobrovolskas, Darius;
Arakawa, Shingo;
Mouri, Shinichiro;
Araki, Tsutomu;
Nanishi, Yasushi;
Mickevičius, Jūras;
Tamulaitis, Gintautas

Publication type:

Article

Numerical Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability at High Pressures.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 4, p. 377, doi. 10.3390/cryst14040377

By:

Enayati, Hooman;
Pimputkar, Siddha

Publication type:

Article

Computational Fluid Dynamic Analysis of a High-Pressure Spatial Chemical Vapor Deposition (HPS-CVD) Reactor for Flow Stability.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 2, p. 105, doi. 10.3390/cryst14020105

By:

Enayati, Hooman;
Pimputkar, Siddha

Publication type:

Article

N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 4, p. 699, doi. 10.3390/cryst13040699

By:

Muthuraj, Vineeta R.;
Liu, Wenjian;
Collins, Henry;
Li, Weiyi;
Hamwey, Robert;
DenBaars, Steven P.;
Mishra, Umesh K.;
Keller, Stacia

Publication type:

Article

Simulation and analysis of solar cells based on InN/p-Si: influence on thickness, doping concentration, and temperature dependence.

Published in:

International Journal of Nanoelectronics & Materials, 2024, v. 17, n. 3, p. 437, doi. 10.58915/ijneam.v17i3.1164

By:

Khairuddin, Nur Syahirah;
Mohd Yusoff, Mohd Zaki;
Hussin, Hanim;
Artes Jr., Rosalio G.

Publication type:

Article

First-principles study of optical properties of InN nanosheet.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 19, p. -1, doi. 10.1142/S0217979216501174

By:

Sarmazdeh, Masoud Majidiyan;
Mendi, Roohallah Taghavi;
Zelati, Amir;
Boochani, Arash;
Nofeli, Fariba

Publication type:

Article

Characterization of InN nanoparticles prepared by laser as photodetector.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 14, p. -1, doi. 10.1142/S0217979216500806

By:

Khashan, Khawla S.;
Abbas, Sarah F.

Publication type:

Article

Gas‐Phase Photocatalytic Coprocessing of CO2 – H2O(v) to Energy Products Promoted by the n,n‐Junction In2O3@g‐C3N4 under VIS‐Light.

Published in:

ChemSusChem, 2024, v. 17, n. 21, p. 1, doi. 10.1002/cssc.202400661

By:

Baran, Tomasz;
Aresta, Michele;
Comparelli, Roberto;
Dibenedetto, Angela

Publication type:

Article

Formation of embedded indium nitride and indium oxide nanoclusters in silica samples sequentially implanted with indium and nitrogen ions.

Published in:

Journal of Experimental Nanoscience, 2013, v. 8, n. 7/8, p. 957, doi. 10.1080/17458080.2011.630034

By:

Raman, P.Santhana;
Nair, K.G.M.;
Ghatak, Jay;
Bhatta, UmanandaM.;
Satyam, P.V.;
Kalavathi, S.;
Panigrahi, B.K.;
Ravichandran, V.

Publication type:

Article