Works matching Transistor Technologies

Results: 807

2D Dielectrophoresis using an active matrix array made by thin‐film‐transistor technology.

Published in:

IEEJ Transactions on Electrical & Electronic Engineering, 2019, v. 14, n. 9, p. 1280, doi. 10.1002/tee.22979

By:

Tixier‐Mita, Agnès;
Ihida, Satoshi;
Blanchard, Damien;
Shinohara, Marie;
Eiler, Anne‐Claire;
Cathcart, Grant Alexander;
Faure, Pierre‐Marie;
Kohno, Takashi;
Sakai, Yasuyuki;
Lévi, Timothée;
Toshiyoshi, Hiroshi

Publication type:

Article

Study of the UTBB BESOI Tunnel-FET Working as a Dual-Technology Transistor.

Published in:

Journal of Integrated Circuits & Systems, 2021, v. 16, n. 2, p. 1, doi. 10.29292/jics.v16i2.208

By:

Mori, Carlos A. B.;
Agopian, Paula G. D.;
Martino, João A.

Publication type:

Article

Design of energy‐efficient ternary circuits using differential cascode voltage switch strategies in carbon nanotube field effect transistor technology.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2020, v. 14, n. 7, p. 1077, doi. 10.1049/iet-cds.2019.0375

By:

Sharma, Trapti;
Kumre, Laxmi

Publication type:

Article

Technology and Modeling of Nonclassical Transistor Devices.

Published in:

Journal of Electrical & Computer Engineering, 2019, p. 1, doi. 10.1155/2019/4792461

By:

Angelov, George V.;
Nikolov, Dimitar N.;
Hristov, Marin H.

Publication type:

Article

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors.

Published in:

Sensors (14248220), 2019, v. 19, n. 11, p. 2454, doi. 10.3390/s19112454

By:

Božanić, Mladen;
Sinha, Saurabh

Publication type:

Article

An Analogue Multiplier Using Carbon Nanotube Field-effect Transistor Technology.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04022

By:

Hatefinasab, Seyedehsomayeh

Publication type:

Article

Design of unbalanced 9:2 ternary encoder and 2:9 ternary decoder circuits in resistive random access memory and carbon nanotube field effect transistor technology.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 10, p. 5403, doi. 10.1002/cta.4022

By:

Khurshid, Tabassum;
Singh, Vikram

Publication type:

Article

Thin Film Transistors Gas Sensors: Materials, Manufacturing Technologies and Test Results.

Published in:

Electronics & Electrical Engineering, 2009, n. 89, p. 39

By:

Pereira, M. C.;
Martins, M. J.;
Bonnaud, O.

Publication type:

Article

260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 194, doi. 10.1049/el.2016.3882

By:

Yoon, D.;
Seo, M.-G.;
Song, K.;
Kaynak, M.;
Tillack, B.;
Rieh, J.-S.

Publication type:

Article

260‐GHz differential amplifier in SiGe heterojunction bipolar transistor technology.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 194, doi. 10.1049/el.2016.3882

By:

Yoon, D.;
Seo, M.‐G.;
Song, K.;
Kaynak, M.;
Tillack, B.;
Rieh, J.‐S.

Publication type:

Article

基于低温多晶硅-氧化物半导体混合集成的薄膜晶体管显示背板技术.

Published in:

Chinese Journal of Liquid Crystal & Displays, 2021, v. 36, n. 2, p. 1, doi. 10.37188/CJLCD.2020-0268

By:

邓立昂;
陈世林;
黄博天;
郭小军

Publication type:

Article

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 18, p. 1, doi. 10.1002/pssa.202100290

By:

Alim, Mohammad A.;
Naima, Jannatul;
Rezazadeh, Ali A.

Publication type:

Article

A new factor for fabrication technologies evaluation for silicon nanowire transistors.

Published in:

Telkomnika, 2020, v. 18, n. 5, p. 2597, doi. 10.12928/TELKOMNIKA.v18i5.12121

By:

Hashim, Yasir;
Nazmus Shakib, Mohammed

Publication type:

Article

An Asynchronous Design for Testability and Implementation in Thin-film Transistor Technology.

Published in:

Journal of Electronic Testing, 2011, v. 27, n. 2, p. 193, doi. 10.1007/s10836-011-5195-x

By:

Cheng, Chi-Hsuan;
Li, James

Publication type:

Article

ANALYSIS OF THE USE OF TRANSISTORS BASED ON SiC TECHNOLOGY IN INVERTERS IN THE CONTEXT OF ELECTROMAGNETIC COMPATIBILITY.

Published in:

Technical Transactions / Czasopismo Techniczne, 2016, v. 1-M, n. 2, p. 33, doi. 10.4467/2353737XCT.16.027.5289

By:

CZUCHRA, WOJCIECH;
MYSIŃSKI, WOJCIECH;
WOSZCZYNA, BARTOSZ

Publication type:

Article

Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201259

By:

Fuchsberger, Andreas;
Wind, Lukas;
Sistani, Masiar;
Behrle, Raphael;
Nazzari, Daniele;
Aberl, Johannes;
Prado Navarrete, Enrique;
Vukŭsić, Lada;
Brehm, Moritz;
Schweizer, Peter;
Vogl, Lilian;
Maeder, Xavier;
Weber, Walter M.

Publication type:

Article

A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-01917-9

By:

Liu, Yang;
Lv, Yuanjie;
Guo, Shuoshuo;
Luan, Zhengfang;
Cheng, Aijie;
Lin, Zhaojun;
Yang, Yongxiong;
Jiang, Guangyuan;
Zhou, Yan

Publication type:

Article

Rapid and Highly Sensitive Detection of Leishmania by Combining Recombinase Polymerase Amplification and Solution-Processed Oxide Thin-Film Transistor Technology.

Published in:

Biosensors (2079-6374), 2023, v. 13, n. 8, p. 765, doi. 10.3390/bios13080765

By:

Wu, Weidong;
Biyani, Manish;
Hirose, Daisuke;
Takamura, Yuzuru

Publication type:

Article

COMPARISON OF TWO GAN TRANSISTOR TECHNOLOGIES IN BROADBAND POWER AMPLIFIERS.

Published in:

Microwave Journal, 2010, v. 53, n. 4, p. 184

By:

Azam, S.;
Svenson, C.;
Wahab, Q.;
Jonsson, R.

Publication type:

Article

An energy‐efficient dynamic comparator in Carbon Nanotube Field Effect Transistor technology for successive approximation register ADC applications.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2022, v. 16, n. 4, p. 360, doi. 10.1049/cds2.12112

By:

Mahmoodian, Hamid;
Dolatshahi, Mehdi;
Zanjani, S. Mohammadali;
Honarvar, Mohammad Amin

Publication type:

Article

Organic Electrochemical Transistors: An Emerging Technology for Biosensing.

Published in:

Advanced Materials Interfaces, 2022, v. 9, n. 6, p. 1, doi. 10.1002/admi.202102039

By:

Marks, Adam;
Griggs, Sophie;
Gasparini, Nicola;
Moser, Maximilian

Publication type:

Article

Evaluation of safety and efficacy of insulated-gate bipolar transistor holmium laser technology for prostate enucleation in canine model: a preliminary study.

Published in:

Lasers in Medical Science, 2024, v. 39, n. 1, p. 1, doi. 10.1007/s10103-024-04155-3

By:

Sun, Jie;
Sherryn, Sherryn;
Tong, Zhen;
Xia, Shengqiang;
Chen, Bin

Publication type:

Article

BSIM3v3 Characterization and Simulation of MOS Si1-xGex Transistors with 130 nm Submicron Technology.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04021

By:

Hebali, M.;
Bennaoum, M.;
Benzohra, M.;
Chalabi, D.;
Saïdane, A.

Publication type:

Article

High-power microwave LDMOS transistors for wireless data transmission technologies (Review).

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1669, doi. 10.1134/S1063782610130105

By:

Kuznetsov, E.;
Shemyakin, A.

Publication type:

Article

Recent Advances in Ferroelectric-Gate Field-Effect-Transistor Technology.

Published in:

Integrated Ferroelectrics, 2011, v. 124, n. 1, p. 140, doi. 10.1080/10584587.2011.573739

By:

Sakai, Shigeki;
Takahashi, Mitsue

Publication type:

Article

Flexible switch matrix addressable electrode arrays with organic electrochemical transistor and pn diode technology.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-023-44024-1

By:

Uguz, Ilke;
Ohayon, David;
Arslan, Volkan;
Sheelamanthula, Rajendar;
Griggs, Sophie;
Hama, Adel;
Stanton, John William;
McCulloch, Iain;
Inal, Sahika;
Shepard, Kenneth L.

Publication type:

Article

The corporate concentration in mass communication technology: the Spanish radiotelegraphy in the transistor and computer era.

Published in:

TST - Transportes, Servicios y Telecomunicaciones, 2024, n. 53, p. 15, doi. 10.24197/tst.53.2024.

By:

CALVO, ÁNGEL

Publication type:

Article

Intraorganizational Alignment and Innovation Processes: Philips and Transistor Technology.

Published in:

Business History Review, 2006, v. 80, n. 4, p. 657, doi. 10.2307/25097265

By:

Davids, Mila;
Verbong, Geert

Publication type:

Article

ULTRA-THIN SOI TRANSISTORS FOR ULTIMATE CMOS TECHNOLOGY: FUNDAMENTAL PROPERTIES AND APPLICATIONS PERSPECTIVES.

Published in:

International Journal of High Speed Electronics & Systems, 2002, v. 12, n. 2, p. 333, doi. 10.1142/S0129156402001290

By:

Esseni, D.;
Sangiorgi, E.;
Mastrapasqua, M.;
Fiegna, C.;
Celler, G.K.;
Selmi, L.

Publication type:

Article

SILICON:GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS: FROM EXPERIMENT TO TECHNOLOGY.

Published in:

International Journal of High Speed Electronics & Systems, 1994, v. 5, n. 3, p. 473, doi. 10.1142/S012915649400019X

By:

MEYERSON, B.S.;
HARAME, D.L.;
STORK, J.;
CRABBE, E.;
COMFORT, J.;
PATTON, G.

Publication type:

Article

Gate-All-Around GaN Nanowire FET as a Potential Transistor at 5 nm Technology for Low-Power Low-Voltage Applications.

Published in:

NANO (1793-2920), 2021, v. 16, n. 8, p. 1, doi. 10.1142/S179329202150096X

By:

Thakur, Rajiv Ranjan;
Chaturvedi, Nidhi

Publication type:

Article

基于微增材技术制造的氧化铟镓锌薄膜晶体管及其性能.

Published in:

Electronic Components & Materials, 2021, v. 40, n. 12, p. 1171, doi. 10.14106/j.cnki.1001-2028.2021.0403

By:

张奇;
崔西会;
方杰;
项徽清;
刘建国

Publication type:

Article

Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Effect Transistor Technology.

Published in:

Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials, 2020, v. 50, n. 4, p. 233, doi. 10.33180/InfMIDEM2020.401

By:

Mamatov, Islombek;
Özçelep, Yasin;
Kaçar, Firat

Publication type:

Article

Review of Nanosheet Transistors Technology.

Published in:

Tikrit Journal of Engineering Sciences, 2021, v. 28, n. 1, p. 40, doi. 10.25130/tjes.28.1.05

By:

Hassan Agha, Firas N. A.;
Naif, Yasir H.;
Shakib, Mohammed N.

Publication type:

Article

K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm−1 Extrinsic Transconductance.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 3, p. 1, doi. 10.1002/pssa.202400592

By:

Yazdani, Hossein;
Beleniotis, Petros;
Brunner, Frank;
Ostermay, Ina;
Würfl, Joachim;
Rudolph, Matthias;
Heinrich, Wolfgang;
Hilt, Oliver

Publication type:

Article

First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202300953

By:

Li, Hanchao;
Xie, Hanlin;
Wang, Yue;
Yulia, Lekina;
Ranjan, Kumud;
Singh, Navab;
Chung, Surasit;
Lee, Kenneth E.;
Arulkumaran, Subramaniam;
Ing Ng, Geok

Publication type:

Article

Suppression of Reverse Leakage in Enhancement‐Mode GaN High‐Electron‐Mobility Transistor by Extended PGaN Technology.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200692

By:

Dai, Xinyue;
Ji, Zhongchen;
Jiang, Qimeng;
Huang, Sen;
Fan, Jie;
Feng, Chao;
Jin, Hao;
Tang, Xiaotian;
Wang, Xinhua;
Liu, Xinyu

Publication type:

Article

Carbon nanotube transistor technology for More-Moore scaling.

Published in:

Nano Research, 2021, v. 14, n. 9, p. 3051, doi. 10.1007/s12274-021-3459-z

By:

Cao, Qing

Publication type:

Article

Development of an ion-sensitive field effect transistor based on PVC membrane technology with improved long-term stability.

Published in:

Electroanalysis, 1997, v. 9, n. 4, p. 316, doi. 10.1002/elan.1140090411

By:

Jiménez, Cecilia;
Bartroli, Jordi

Publication type:

Article

A Road Map toward Field‐Effect Transistor Biosensor Technology for Early Stage Cancer Detection.

Published in:

Small Methods, 2022, v. 6, n. 10, p. 1, doi. 10.1002/smtd.202200809

By:

Eswaran, Muthusankar;
Chokkiah, Bavatharani;
Pandit, Santosh;
Rahimi, Shadi;
Dhanusuraman, Ragupathy;
Aleem, Mahaboobbatcha;
Mijakovic, Ivan

Publication type:

Article

130nm Logic Technology Featuring 60nm Transistors, Low-K Dielectrics, and Cu Interconnects.

Published in:

Intel Technology Journal, 2002, v. 6, n. 2, p. 5

By:

Thompson, Scott;
Alavi, Mohsen;
Hussein, Makarem;
Jacob, Pauline;
Kenyon, Chris;
Moon, Peter;
Prince, Matthew;
Sivakumar, Sam;
Tyagi, Sunit;
Bohr, Mark

Publication type:

Article

Multiple Gate Field-Effect Transistors for Future CMOS Technologies.

Published in:

IETE Technical Review, 2010, v. 27, n. 6, p. 446, doi. 10.4103/0256-4602.72582

By:

Subramanian, Vaidyanathan

Publication type:

Article

Effective dose estimation for pediatric upper gastrointestinal examinations using an anthropomorphic phantom set and metal oxide semiconductor field-effect transistor (MOSFET) technology.

Published in:

Pediatric Radiology, 2013, v. 43, n. 9, p. 1108, doi. 10.1007/s00247-013-2674-5

By:

Emigh, Brent;
Gordon, Christopher;
Connolly, Bairbre;
Falkiner, Michelle;
Thomas, Karen

Publication type:

Article

Effective dose estimation for pediatric voiding cystourethrography using an anthropomorphic phantom set and metal oxide semiconductor field-effect transistor (MOSFET) technology.

Published in:

Pediatric Radiology, 2009, v. 39, n. 6, p. 608, doi. 10.1007/s00247-009-1161-5

By:

Lee, Ryan;
Thomas, Karen E.;
Connolly, Bairbre L.;
Falkiner, Michelle;
Gordon, Christopher L.

Publication type:

Article

The Technology of Transistors.

Published in:

Nature, 1959, v. 183, n. 4654, p. 72, doi. 10.1038/183072a0

By:

TILLMAN, J. R.

Publication type:

Article

Transistor Technology.

Published in:: Nature, 1957, v. 180, n. 4598, p. 1329, doi. 10.1038/1801329a0
Publication type:: Article

Design of an oscillator with low phase noise and medium output power in a 0.25 μm GaN-on-SiC high electron-mobility transistors technology.

Published in:

IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2015, v. 9, n. 8, p. 795, doi. 10.1049/iet-map.2014.0449

By:

Hang Liu;
Xi Zhu;
Chirn Chye Boon;
Xiang Yi

Publication type:

Article

Device and Circuit Exploration of Multi-Nanosheet Transistor for Sub-3 nm Technology Node.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 2, p. 180, doi. 10.3390/electronics10020180

By:

Seon, Yoongeun;
Chang, Jeesoo;
Yoo, Changhyun;
Jeon, Jongwook

Publication type:

Article

Arc extinction of DC side low-voltage breaker of charging device for battery pack in power plant based on insulated-gate bipolar transistor module series technology.

Published in:

Journal of Engineering, 2019, v. 2019, n. 4, p. 2312, doi. 10.1049/joe.2018.8613

By:

Yao, Fang;
Zhao, Wangwang;
Wang, Jie;
Li, Zhigang

Publication type:

Article

P‐32: Dual Gate Amorphous Silicon Thin Film Transistor Technology for High Brightness and High Frame Rate Outdoor Display Panels.

Published in:

SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 1475, doi. 10.1002/sdtp.17831

By:

Zhou, Zhichao;
Zhu, Yiyi;
Zhou, Xiaoliang;
Qiao, Lei;
Liu, Zhongjie;
Tan, Zhiwei

Publication type:

Article