Works matching DE "METAL semiconductor field-effect transistors"

Results: 356

Investigation of High-k Dielectric Passivation Effects on DC Performance of AlN/β-Ga2O3 HEMTs.

Published in:

Semiconductors, 2025, v. 59, n. 5, p. 452, doi. 10.1134/S1063782624602632

By:

Acharjee, Nabojwal;
Singh, Sarita;
Dadi, Anil Prasad;
Bordoloi, Sushanta;
Ray, Ashok

Publication type:

Article

Non-Destructive Wafer Recycling for Low-Cost Thin-Film Flexible Optoelectronics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 27, p. 4284, doi. 10.1002/adfm.201400453

By:

Lee, Kyusang;
Zimmerman, Jeramy D.;
Hughes, Tyler W.;
Forrest, Stephen R.

Publication type:

Article

Embedded metal and L-shaped oxide layers in silicon on insulator MESFETs: higher electric field tolerance and lower high frequency gate capacitances.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 25, p. 19971, doi. 10.1007/s10854-022-08816-3

By:

Farahzad, Elham;
Naderi, Ali

Publication type:

Article

Performance evaluation of dielectric modulation and metalloid T-shaped source/drain on gate-all-around junctionless transistor for improved analog/RF application.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 8, p. 10943, doi. 10.1007/s10854-021-05754-4

By:

Pratap, Yogesh;
Kumar, Sachin;
Gupta, R. S.;
Gupta, Mridula

Publication type:

Article

Band gap and gate metal engineering of novel hetero-material InAs/GaAs-based JLTFET for improved wireless applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 3, p. 3155, doi. 10.1007/s10854-020-05064-1

By:

Sharma, Samriti;
Chaujar, Rishu

Publication type:

Article

Temperature and voltage dependence C–V and G/ω–V characteristics in Au/n-type GaAs metal–semiconductor structures and the source of negative capacitance.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 1, p. 707, doi. 10.1007/s10854-020-04850-1

By:

KARATAŞ, Şükrü

Publication type:

Article

Advances in gas ionization sensors based on nanostructured materials: a review.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 21, p. 19087, doi. 10.1007/s10854-019-02331-8

By:

Sohi, Parsoua A.;
Kahrizi, Mojtaba

Publication type:

Article

l-Arginine assisted preparation of Ag/ZnO nanocomposites with enhanced photocatalytic performance.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 2775, doi. 10.1007/s10854-015-2758-0

By:

Chen, You-Cun;
Cheng, Jinnan;
Cheng, Jun;
Cheng, Si

Publication type:

Article

Microstructural and electrical characteristics of rapidly annealed Ni/Mo Schottky rectifiers on cleaned n-type GaN (0001) surface.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 3, p. 286, doi. 10.1007/s10854-010-0129-4

By:

Jyothi, I.;
Rajagopal Reddy, V.;
Choi, Chel-Jong

Publication type:

Article

Buffer-trapping effects on current slump in AlGaN/GaN HEMTs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 735, doi. 10.1007/s10854-007-9399-x

By:

Nakajima, Atsushi;
Horio, Kazushige

Publication type:

Article

Enhanced performance of SOI MESFETs by displacement of gate contact and applying double oxide packets.

Published in:

Electrical Engineering, 2023, v. 105, n. 5, p. 2781, doi. 10.1007/s00202-023-01848-w

By:

Fath-Ganji, Behrooz;
Mir, Ali;
Naderi, Ali;
Talebzadeh, Reza;
Farmani, Ali

Publication type:

Article

Photo Organic Field Effect Transistor's Properties.

Published in:

Turkish Journal of Physics, 2008, v. 32, n. 1, p. 13

By:

Karimov, Khasan S.;
Qazi, Ibrahim;
Tahir, M. Mahroof;
Khan, Tauseef Ahmed;
Shafique, Umar

Publication type:

Article

Improved Performance of Stair-Stepping Buffer-Gate 4H Silicon Carbide Metal Semiconductor Field Effect Transistor.

Published in:

Integrated Ferroelectrics, 2020, v. 209, n. 1, p. 11, doi. 10.1080/10584587.2020.1728799

By:

Zhang, Xianjun;
Li, Na;
Wang, Mingjia;
Qin, Qingliang;
Qin, Haohua;
You, Na

Publication type:

Article

Mathematical Models of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor.

Published in:

Integrated Ferroelectrics, 2014, v. 157, n. 1, p. 81, doi. 10.1080/10584587.2014.912086

By:

Hunt, Mitchell R.;
Sayyah, Rana;
Mitchell, Cody;
McCartney, Crystal L.;
Macleod, Todd C.;
Ho, Fat D.

Publication type:

Article

Extended Characterization of the Common-Source and Common-Gate Amplifiers Using a Metal-Ferroelectric-Semiconductor Field Effect Transistor.

Published in:

Integrated Ferroelectrics, 2014, v. 157, n. 1, p. 71, doi. 10.1080/10584587.2014.912082

By:

Hunt, Mitchell R.;
Sayyah, Rana;
Mitchell, Cody;
McCartney, Crystal L.;
Macleod, Todd C.;
Ho, Fat D.

Publication type:

Article

IMPROVEMENT OF ALKOXY-DERIVED HfO2 LAYERS FOR (Y, Yb)MnO3/HfO2/Si STRUCTURES.

Published in:

Integrated Ferroelectrics, 2006, v. 84, n. 1, p. 121, doi. 10.1080/10584580601085420

By:

SUZUKI, KAZUYUKI;
GUO, YIPING;
NISHIZAWA, KAORI;
MIKI, TAKESHI;
KATO, KAZUMI

Publication type:

Article

FEASIBILITY OF TUNABLE AMPLIFIER AND BANDPASS FILTER FOR MOBILE HANDSETS USING ACTIVE INDUCTOR CIRCUITS.

Published in:

Active & Passive Electronic Components, 2002, v. 25, n. 4, p. 307, doi. 10.1080/08827510214372

By:

Rodriguez Tellez, J.;
Ali, N.T.;
Majeed, B.

Publication type:

Article

NEGATIVE DIFFERENTIAL RESISTANCE BEHAVIOR IN DELTA-DOPED AlInP STRUCTURE GROWN BY MOCVD.

Published in:

Active & Passive Electronic Components, 2002, v. 25, n. 3, p. 245, doi. 10.1080/08827510213497

By:

Yarn, K.F.

Publication type:

Article

Mapping of inhomogeneity and thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1017, doi. 10.1002/pssb.201451579

By:

Yamamoto, Shingo;
Kihara, Yuhei;
Shiojima, Kenji

Publication type:

Article

Hopping-tunneling model to describe electric charge injection at metal/organic semiconductor heterojunctions.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 2, p. 404, doi. 10.1002/pssb.201451556

By:

Gozzi, Giovani;
Queiroz, Edivaldo Leal;
Zucolotto, Valtencir;
Faria, Roberto Mendoça;
Chinaglia, Dante Luis

Publication type:

Article

Strategy to improve synaptic behavior of ion-actuated synaptic transistors—the use of ion blocking layer to improve state retention.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-55681-7

By:

Jeon, Seonuk;
Tessler, Nir;
Kim, Nayeon;
Hong, Eunryeong;
Kim, Hyun Wook;
Woo, Jiyong

Publication type:

Article

Novel quantum‐dot cellular automata implementation of flip‐flop and phase‐frequency detector based on nand‐nor‐inverter gates.

Published in:

International Journal of Circuit Theory & Applications, 2021, v. 49, n. 1, p. 196, doi. 10.1002/cta.2825

By:

Alamdar, Hani;
Ardeshir, Gholamreza;
Gholami, Mohammad

Publication type:

Article

Simulation and Analysis of Si Schottky Diode Family in DC-DC Converter.

Published in:

International Journal on Electrical Engineering & Informatics, 2009, v. 1, n. 2, p. 137

By:

Yahaya, N. Z.;
Ramle, F. H.

Publication type:

Article

EXPERIMENTAL OBSERVATION OF LINEAR AND NONLINEAR PULSES IN TRAVELING-WAVE FIELD-EFFECT TRANSISTORS PERIODICALLY LOADED WITH SCHOTTKY VARACTORS.

Published in:: Progress in Electromagnetics Research B, 2012, v. 38, p. 387
Publication type:: Article

Influence of the metallic contact surface area on the low-frequency noises of metal-semiconductor contacts.

Published in:

Armenian Journal of Physics, 2015, v. 8, n. 1, p. 30

By:

KHONDKARYAN, H. D.

Publication type:

Article

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation.

Published in:

International Journal of High Speed Electronics & Systems, 2019, v. 28, n. 1/2, p. N.PAG, doi. 10.1142/S0129156419400032

By:

Kabouche, Riad;
Pecheux, Romain;
Harrouche, Kathia;
Okada, Etienne;
Medjdoub, Farid;
Derluyn, Joff;
Degroote, Stefan;
Germain, Marianne;
Gucmann, Filip;
Middleton, Callum;
Pomeroy, James W.;
Kuball, Martin

Publication type:

Article

BIOMOLECULAR FIELD EFFECT SENSORS (BIOFETS): FROM QUALITATIVE SENSING TO MULTIPLEXING, CALIBRATION AND QUANTITATIVE DETECTION FROM WHOLE BLOOD.

Published in:

International Journal of High Speed Electronics & Systems, 2012, v. 21, n. 1, p. -1, doi. 10.1142/S0129156412500048

By:

VACIC, ALEKSANDAR;
REED, MARK A.

Publication type:

Article

SILICON-ON-INSULATOR MESFETS AT THE 45NM NODE.

Published in:

International Journal of High Speed Electronics & Systems, 2012, v. 21, n. 1, p. -1, doi. 10.1142/S0129156412500127

By:

LEPKOWSKI, WILLIAM;
WILK, SETH J.;
GHAJAR, M. REZA;
PARSI, ANURADHA;
THORNTON, TREVOR J.

Publication type:

Article

AN EFFICIENT NUMERICAL METHOD OF DC MODELING FOR POWER MOSFET, MESFET AND AlGaN/GaN HEMT.

Published in:

International Journal of High Speed Electronics & Systems, 2008, v. 18, n. 4, p. 825, doi. 10.1142/S0129156408005801

By:

RAHMAN, TOUHIDUR;
HUQUE, MOHAMMAD A.;
ISLAM, SYED K.

Publication type:

Article

4H-SIC VERTICAL RESURF SCHOTTKY RECTIFIERS AND MOSFETS.

Published in:

International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 55, doi. 10.1142/S0129156407004242

By:

Wang, Y.;
Losee, P. A.;
Chow, T. P.

Publication type:

Article

SILICON-BASED INTEGRATED MOSFETS AND MESFETS: A NEW PARADIGM FOR LOW POWER, MIXED SIGNAL, MONOLITHIC SYSTEMS USING COMMERCIALLY AVAILABLE SOI.

Published in:

International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 2, p. 723, doi. 10.1142/S0129156406003977

By:

Jinman Yang;
Balijepalli, Asha;
Thornton, Trevor J.

Publication type:

Article

ANALYTICAL MODEL FOR NON-SELF ALIGNED BURIED P-LAYER SiC MESFET.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 273, doi. 10.1142/S0129156404003010

By:

Gupta, R. S.;
Aggarwal, Sandeep Kumar;
Gupta, Ritesh;
Gupta, Mridula;
Haldar, Subhasis

Publication type:

Article

EFFECTS OF BUFFER LAYER THICKNESS AND DOPING CONCENTRATION ON SiC MESFET CHARACTERISTICS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 266, doi. 10.1142/S0129156404003009

By:

Mukherjee, Sankha S.;
Islam, Syed S.

Publication type:

Article

SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD- PLATE SiC MESFETs.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 260, doi. 10.1142/S0129156404002995

By:

Cha, Ho-Young;
Choi, Y. C.;
Eastman, Lester F.;
Spencer, Michael G.

Publication type:

Article

PHOTOCAPACITANCE OF GaAs THIN-FILM STRUCTURES FABRICATED ON A SEMI-INSULATING COMPENSATED SUBSTRATE.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 151, doi. 10.1142/S012915640400282X

By:

Gorev, Nikolai B.;
Kodzhespirova, Inna F.;
Privalov, Evgeny N.;
Khuchua, Nina;
Khvedelidze, Levan;
Shur, Michael S.

Publication type:

Article

GaAs MESFET rf I-V curve through unique determination of small-signal circuit parameters from measured S parameters.

Published in:

Microwave & Optical Technology Letters, 2002, v. 34, n. 6, p. 426, doi. 10.1002/mop.10483

By:

Meng, C. C.;
Huang, G. H.

Publication type:

Article

1.55-μm surface-illuminated monolithically integrated balanced metal semiconductor metal photodetectors and coplanar waveguide.

Published in:

Microwave & Optical Technology Letters, 2002, v. 34, n. 2, p. 125, doi. 10.1002/mop.10393

By:

Safwat, Amr M. E.;
Kim, Junghwan;
Johnson, William;
Walker, Bobby;
Lee, Chi H.

Publication type:

Article

Monolithic CPW-based multiband unconditionally stable common source and common gate mesfet amplifiers at Ka band.

Published in:

Microwave & Optical Technology Letters, 2002, v. 34, n. 1, p. 1, doi. 10.1002/mop.10354

By:

Hammad, Hany F.;
Freundorfer, Alois P.;
Antar, Yahia M. M.

Publication type:

Article

Noise modeling of an optically controlled MESFET (OPFET).

Published in:

Microwave & Optical Technology Letters, 2002, v. 33, n. 2, p. 79, doi. 10.1002/mop.10242

By:

Chakrabarti, P.;
Jha, Vinayak;
Kalra, Pankaj;
Gupta, Gaurav

Publication type:

Article

A novel analysis method of distributed and traveling-wave amplifiers leading to power gain improvement.

Published in:

Microwave & Optical Technology Letters, 2002, v. 32, n. 3, p. 207, doi. 10.1002/mop.10133

By:

Trabelsi, M.;
Si Moussa, M.;
Aksas, R.

Publication type:

Article

Model for optically biased short-channel GaAs MESFET.

Published in:

Microwave & Optical Technology Letters, 2002, v. 32, n. 2, p. 138, doi. 10.1002/mop.10113

By:

Bose, Srikanta;
Adarsh;
Gupta, Ritesh;
Gupta, Mridula;
Gupta, R. S.

Publication type:

Article

Admittance parameter and unilateral power-gain evaluation of GaN MESFET for microwave circuit applications.

Published in:

Microwave & Optical Technology Letters, 2001, v. 31, n. 5, p. 387, doi. 10.1002/mop.10043

By:

Singh, Adarsh;
Bose, Srikanta;
Gupta, Mridula;
Gupta, R. S.

Publication type:

Article

10 GHz GaAs monolithic twin-dipole antenna FET mixer.

Published in:

Microwave & Optical Technology Letters, 2001, v. 30, n. 6, p. 436, doi. 10.1002/mop.1337

By:

Meng, C. C.;
Deng, K. L.;
Lee, H. D.;
Lu, S. S.;
Wang, H.

Publication type:

Article

A new MESFET nonlinear model.

Published in:

Microwave & Optical Technology Letters, 2001, v. 29, n. 4, p. 226, doi. 10.1002/mop.1139

By:

Ooi, B. L.;
Ma, J. Y.;
Leong, M. S.

Publication type:

Article

The SiNx passivation thickness effect on AlGaAs/InGaAs/GaAs pHEMT performance.

Published in:

Microwave & Optical Technology Letters, 2001, v. 29, n. 2, p. 81, doi. 10.1002/mop.1090

By:

Li Hongqin;
Sun Xiaowei;
Xia Guanqun

Publication type:

Article

A novel extraction method for the higher order components of channel current in a GaAs MESFET.

Published in:

Microwave & Optical Technology Letters, 2001, v. 29, n. 2, p. 114, doi. 10.1002/mop.1101

By:

Kim, Youngsik;
Jaehyok Yi;
Youngoo Yang;
Kim, Bumman

Publication type:

Article

On the nonlinear distortion of QPSK-based digital modulation signals in microwave MESFET amplifiers.

Published in:

Microwave & Optical Technology Letters, 2001, v. 28, n. 3, p. 212, doi. 10.1002/1098-2760(20010205)28:3<212::AID-MOP19>3.0.CO;2-3

By:

Chien-Chang Huang

Publication type:

Article

Numerical investigations of optically induced Gunn oscillations in MESFET-like structures.

Published in:

Microwave & Optical Technology Letters, 2001, v. 28, n. 1, p. 72, doi. 10.1002/1098-2760(20010105)28:1<72::AID-MOP20>3.0.CO;2-A

By:

Alsunaidi, M. A.

Publication type:

Article

A new systematic optimization strategy for microwave power device modeling.

Published in:

Microwave & Optical Technology Letters, 2000, v. 27, n. 4, p. 269, doi. 10.1002/1098-2760(20001120)27:4<269::AID-MOP16>3.0.CO;2-8

By:

Gu, Cong;
Liu, Youbao

Publication type:

Article

Cutoff frequency and optimum noise figure of GaAs optically controlled FET.

Published in:

Microwave & Optical Technology Letters, 2000, v. 26, n. 5, p. 279, doi. 10.1002/1098-2760(20000905)26:5<279::AID-MOP1>3.0.CO;2-0

By:

Bose, Srikanta;
Gupta, Mridula;
Gupta, R. S.

Publication type:

Article