Trapping behavior of GaN HEMTs and its implications on class B PA bias point selection.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2128
- By:
- Publication type:
- Article
Works matching IS 08943370 AND DT 2017 AND VI 30 AND IP 1
Results: 17
1
2
Design of Ku-band GaN HEMT power amplifier based on multi-bias statistical model.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2130
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- Publication type:
- Article
3
Optimization-based approach for scalable small-signal and noise model extraction of GaN-on-SiC HEMTs.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2135
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- Publication type:
- Article
4
Efficient modeling of GaN HEMTs for linear and nonlinear circuits design.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2100
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- Publication type:
- Article
5
An efficient parameter extraction method for GaN HEMT small-signal equivalent circuit model.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2127
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- Publication type:
- Article
6
A parameter extraction method for GaN HEMT empirical large-signal model including self-heating and trapping effects.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2137
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- Publication type:
- Article
7
Physics-based mathematical model of 2DEG sheet charge density and DC characteristics of AlInN/AlN/GaN MOSHEMT.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2117
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- Publication type:
- Article
8
On-wafer characterization setup for model extraction and validation of high-power GaN HEMT switches.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2118
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- Publication type:
- Article
9
Empowering GaN HEMT models: The gateway for power amplifier design.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2125
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- Publication type:
- Article
10
Wave approach for noise modeling of gallium nitride high electron-mobility transistors.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2138
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- Publication type:
- Article
11
An improved linear modeling technique with sensitivity analysis for GaN HEMT.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2139
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- Publication type:
- Article
12
On the design of GaN Chireix power amplifiers using an embedding device model.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2148
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- Publication type:
- Article
13
A procedure for the extraction of a nonlinear microwave GaN FET model.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2151
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- Publication type:
- Article
14
A novel nonlinear large-signal statistical model of GaN HEMT used in S-band power amplifier design and yield estimation.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2165
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- Publication type:
- Article
15
A novel approach for the modeling of HEMT high power device.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2172
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- Publication type:
- Article
16
Guest editorial for the special issue on linear and nonlinear modeling of GaN transistors and circuits.
- Published in:
- 2017
- By:
- Publication type:
- Editorial
17
Issue Information.
- Published in:
- International Journal of Numerical Modelling, 2017, v. 30, n. 1, p. n/a, doi. 10.1002/jnm.2195
- Publication type:
- Article