The 2-D boundary element techniques for capacitance extraction of nanometer VLSI interconnects.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 4, p. 656, doi. 10.1002/jnm.1934
- By:
- Publication type:
- Article
Works matching IS 08943370 AND DT 2014 AND VI 27 AND IP 4
Results: 10
1
2
Modeling of MESFET in SPICE including self-heating.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 4, p. 691, doi. 10.1002/jnm.1974
- By:
- Publication type:
- Article
3
Special Issue on innovative modelling techniques for novel technologies in wireless power transfer.
- Published in:
- 2014
- By:
- Publication type:
- Other
4
Meshfree-enriched electromagnetic finite element formulation using nodal integration.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 4, p. 669, doi. 10.1002/jnm.1940
- By:
- Publication type:
- Article
5
Call for papers: Noise modeling of high-frequency semiconductor devices.
- Published in:
- 2014
- By:
- Publication type:
- Other
6
Commutation modelling and sparks reduction based on coupled circuit method.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 4, p. 637, doi. 10.1002/jnm.1845
- By:
- Publication type:
- Article
7
Interface modeling between the printed thick-film silver paste and emitter for crystalline silicon solar cells.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 4, p. 649, doi. 10.1002/jnm.1925
- By:
- Publication type:
- Article
8
Call for Papers: Advances in simulation-driven modeling and optimization of microwave/RF circuits.
- Published in:
- 2014
- By:
- Publication type:
- Other
9
Issue Information.
- Published in:
- 2014
- Publication type:
- Other
10
A 2-D surface-potential-based threshold voltage model for short channel asymmetric heavily doped DG MOSFETs.
- Published in:
- International Journal of Numerical Modelling, 2014, v. 27, n. 4, p. 682, doi. 10.1002/jnm.1971
- By:
- Publication type:
- Article