Works matching DE "SCHOTTKY barrier"
Results: 860
Oxygen Vacancies Modified TiO<sub>2</sub>/O‐Terminated Ti<sub>3</sub>C<sub>2</sub> Composites: Unravelling the Dual Effects between Oxygen Vacancy and High‐Work‐Function Titanium Carbide.
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- Advanced Functional Materials, 2023, v. 33, n. 41, p. 1, doi. 10.1002/adfm.202307702
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Vertical Nonvolatile Schottky‐Barrier‐Field‐Effect Transistor with Self‐Gating Semimetal Contact (Adv. Funct. Mater. 19/2023).
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- Advanced Functional Materials, 2023, v. 33, n. 19, p. 1, doi. 10.1002/adfm.202370118
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Vertical Nonvolatile Schottky‐Barrier‐Field‐Effect Transistor with Self‐Gating Semimetal Contact.
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- Advanced Functional Materials, 2023, v. 33, n. 19, p. 1, doi. 10.1002/adfm.202213254
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- Article
2D Oxides Realized via Confinement Heteroepitaxy.
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- Advanced Functional Materials, 2023, v. 33, n. 5, p. 1, doi. 10.1002/adfm.202210404
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Ultra‐High Speed, High‐Sensitivity Spin‐Cast MXene‐Semiconductor‐MXene Photodetectors.
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- Advanced Functional Materials, 2022, v. 32, n. 51, p. 1, doi. 10.1002/adfm.202206942
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Electric Field Screening in Gate‐Tunable van der Waals 2D‐Metal/InSe Junctions.
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- Advanced Functional Materials, 2022, v. 32, n. 47, p. 1, doi. 10.1002/adfm.202207018
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MoS<sub>2</sub> Transistor with Weak Fermi Level Pinning via MXene Contacts.
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- Advanced Functional Materials, 2022, v. 32, n. 43, p. 1, doi. 10.1002/adfm.202204288
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Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory (Adv. Funct. Mater. 38/2022).
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- Advanced Functional Materials, 2022, v. 32, n. 38, p. 1, doi. 10.1002/adfm.202270216
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Highly Efficient and Reliable Semitransparent Perovskite Solar Cells via Top Electrode Engineering.
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- Advanced Functional Materials, 2022, v. 32, n. 27, p. 1, doi. 10.1002/adfm.202111760
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- Article
Work‐Function‐Tunable MXenes Electrodes to Optimize p‐CsCu<sub>2</sub>I<sub>3</sub>/n‐Ca<sub>2</sub>Nb<sub>3‐</sub><sub>x</sub>Ta<sub>x</sub>O<sub>10</sub> Junction Photodetectors for Image Sensing and Logic Electronics.
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- Advanced Functional Materials, 2022, v. 32, n. 24, p. 1, doi. 10.1002/adfm.202201066
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- Article
Ultra‐Sensitive Cubic‐ITO/Silicon Photodiode via Interface Engineering of Native SiO<sub>x</sub> and Lattice‐Strain‐Assisted Atomic Oxidation.
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- Advanced Functional Materials, 2022, v. 32, n. 17, p. 1, doi. 10.1002/adfm.202109794
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The Introduction of Defects in Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> and Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub>‐Assisted Reduction of Graphene Oxide for Highly Selective Detection of ppb‐Level NO<sub>2</sub>.
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- Advanced Functional Materials, 2022, v. 32, n. 15, p. 1, doi. 10.1002/adfm.202108959
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Reconfigurable Carbon Nanotube Barristor.
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- Advanced Functional Materials, 2022, v. 32, n. 11, p. 1, doi. 10.1002/adfm.202107454
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Ternary Transition Metal Chalcogenide Nb<sub>2</sub>Pd<sub>3</sub>Se<sub>8</sub>: A New Candidate of 1D Van der Waals Materials for Field‐Effect Transistors.
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- Advanced Functional Materials, 2022, v. 32, n. 4, p. 1, doi. 10.1002/adfm.202108104
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Low Power MoS<sub>2</sub>/Nb<sub>2</sub>O<sub>5</sub> Memtransistor Device with Highly Reliable Heterosynaptic Plasticity (Adv. Funct. Mater. 40/2021).
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- Advanced Functional Materials, 2021, v. 31, n. 40, p. 1, doi. 10.1002/adfm.202104174
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Low Power MoS<sub>2</sub>/Nb<sub>2</sub>O<sub>5</sub> Memtransistor Device with Highly Reliable Heterosynaptic Plasticity.
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- Advanced Functional Materials, 2021, v. 31, n. 40, p. 1, doi. 10.1002/adfm.202104174
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Infrared Proximity Sensors Based on Photo‐Induced Tunneling in van der Waals Integration.
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- Advanced Functional Materials, 2021, v. 31, n. 31, p. 1, doi. 10.1002/adfm.202100966
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High Performance β‐Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Transistors with Large Work Function TMD Gate of NbS<sub>2</sub> and TaS<sub>2</sub>.
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- Advanced Functional Materials, 2021, v. 31, n. 21, p. 1, doi. 10.1002/adfm.202010303
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Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-Pinning of van der Waals Contacts.
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- Advanced Functional Materials, 2021, v. 31, n. 18, p. 1, doi. 10.1002/adfm.202010513
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Understanding Microscopic Operating Mechanisms of a van der Waals Planar Ferroelectric Memristor.
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- Advanced Functional Materials, 2021, v. 31, n. 9, p. 1, doi. 10.1002/adfm.202009999
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Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors.
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- Advanced Functional Materials, 2020, v. 30, n. 46, p. 1, doi. 10.1002/adfm.202003859
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Li Intercalation Effects on Interface Resistances of High‐Speed and Low‐Power WSe<sub>2</sub> Field‐Effect Transistors.
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- Advanced Functional Materials, 2020, v. 30, n. 45, p. 1, doi. 10.1002/adfm.202003688
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Couplings of Polarization with Interfacial Deep Trap and Schottky Interface Controlled Ferroelectric Memristive Switching.
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- Advanced Functional Materials, 2020, v. 30, n. 43, p. 1, doi. 10.1002/adfm.202000664
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- Article
In Situ Formation of Multiple Schottky Barriers in a Ti<sub>3</sub>C<sub>2</sub> MXene Film and its Application in Highly Sensitive Gas Sensors.
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- Advanced Functional Materials, 2020, v. 30, n. 40, p. 1, doi. 10.1002/adfm.202003998
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InSe Schottky Diodes Based on Van Der Waals Contacts.
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- Advanced Functional Materials, 2020, v. 30, n. 24, p. 1, doi. 10.1002/adfm.202001307
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Reversible Conversion between Schottky and Ohmic Contacts for Highly Sensitive, Multifunctional Biosensors.
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- Advanced Functional Materials, 2020, v. 30, n. 5, p. N.PAG, doi. 10.1002/adfm.201907999
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Efficient Photocatalytic Nitrogen Fixation: Enhanced Polarization, Activation, and Cleavage by Asymmetrical Electron Donation to NN Bond.
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- Advanced Functional Materials, 2020, v. 30, n. 4, p. N.PAG, doi. 10.1002/adfm.201906983
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MoS<sub>2</sub>/MoTe<sub>2</sub> Heterostructure Tunnel FETs Using Gated Schottky Contacts.
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- Advanced Functional Materials, 2020, v. 30, n. 4, p. N.PAG, doi. 10.1002/adfm.201905970
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Transition‐Metal‐Carbide (Mo<sub>2</sub>C) Multiperiod Gratings for Realization of High‐Sensitivity and Broad‐Spectrum Photodetection.
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- Advanced Functional Materials, 2019, v. 29, n. 48, p. N.PAG, doi. 10.1002/adfm.201905384
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Coupled Ion‐Gel Channel‐Width Gating and Piezotronic Interface Gating in ZnO Nanowire Devices.
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- Advanced Functional Materials, 2019, v. 29, n. 41, p. N.PAG, doi. 10.1002/adfm.201807837
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Transport Properties of Se/As<sub>2</sub>Se<sub>3</sub> Nanolayer Superlattice Fabricated Using Rotational Evaporation.
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- Advanced Functional Materials, 2019, v. 29, n. 40, p. N.PAG, doi. 10.1002/adfm.201904758
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Vertical Heterophase for Electrical, Electrochemical, and Mechanical Manipulations of Layered MoTe<sub>2</sub>.
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- Advanced Functional Materials, 2019, v. 29, n. 40, p. N.PAG, doi. 10.1002/adfm.201904504
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Analog Circuit Applications Based on All‐2D Ambipolar ReSe<sub>2</sub> Field‐Effect Transistors.
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- Advanced Functional Materials, 2019, v. 29, n. 22, p. N.PAG, doi. 10.1002/adfm.201809011
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- Article
Comprehensive Pyro‐Phototronic Effect Enhanced Ultraviolet Detector with ZnO/Ag Schottky Junction.
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- Advanced Functional Materials, 2019, v. 29, n. 5, p. N.PAG, doi. 10.1002/adfm.201807111
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- Article
Essential Effects on the Mobility Extraction Reliability for Organic Transistors.
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- Advanced Functional Materials, 2018, v. 28, n. 42, p. N.PAG, doi. 10.1002/adfm.201803907
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A Facet‐Dependent Schottky‐Junction Electron Shuttle in a BiVO<sub>4</sub>{010}–Au–Cu<sub>2</sub>O Z‐Scheme Photocatalyst for Efficient Charge Separation.
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- Advanced Functional Materials, 2018, v. 28, n. 31, p. 1, doi. 10.1002/adfm.201801214
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- Article
Asymmetric Schottky Contacts in Bilayer MoS<sub>2</sub> Field Effect Transistors.
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- Advanced Functional Materials, 2018, v. 28, n. 28, p. 1, doi. 10.1002/adfm.201800657
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- Article
Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field‐Effect Transistors.
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- Advanced Functional Materials, 2018, v. 28, n. 26, p. 1, doi. 10.1002/adfm.201801398
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- Article
Impact of Thickness on Contact Issues for Pinning Effect in Black Phosphorus Field‐Effect Transistors.
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- Advanced Functional Materials, 2018, v. 28, n. 26, p. N.PAG, doi. 10.1002/adfm.201801398
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- Article
A Solar Transistor and Photoferroelectric Memory.
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- Advanced Functional Materials, 2018, v. 28, n. 17, p. 1, doi. 10.1002/adfm.201707099
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- Article
Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO<sub>3</sub> Passivation Interface.
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- Advanced Functional Materials, 2018, v. 28, n. 17, p. 1, doi. 10.1002/adfm.201705829
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石墨烯/MoS<sub>2</sub> 异质结的界面相互作用及其肖特 基调控的理论研究.
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- Journal of Molecular Science, 2023, v. 39, n. 4, p. 360, doi. 10.13563/j.cnki.jmolsci.2022.07.006
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Graphene Enhanced Photo‐Electrochemical Water Splitting by Diminishing Pt/p‐Si Photocathode Interfacial Barrier.
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- ChemPhotoChem, 2023, v. 7, n. 7, p. 1, doi. 10.1002/cptc.202200272
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- Article
Vertical 1T'‐WTe<sub>2</sub>/WS<sub>2</sub> Schottky‐Barrier Phototransistor with Polarity‐Switching Behavior.
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- Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300672
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The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices.
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- Advanced Electronic Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1002/aelm.202300635
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- Article
Mixed‐Halide Perovskite Memristors with Gate‐Tunable Functions Operating at Low‐Switching Electric Fields.
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- Advanced Electronic Materials, 2023, v. 9, n. 12, p. 1, doi. 10.1002/aelm.202300424
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- Article
Hysteresis and Photoconductivity of Few‐Layer ReSe<sub>2</sub> Field Effect Transistors Enhanced by Air Pressure.
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- Advanced Electronic Materials, 2023, v. 9, n. 8, p. 1, doi. 10.1002/aelm.202300066
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- Article
Largely Reducing the Contact Resistance of Molybdenum Ditelluride by In Situ Potassium Modification.
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- Advanced Electronic Materials, 2023, v. 9, n. 7, p. 1, doi. 10.1002/aelm.202300062
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Design‐Dependent Switching Mechanisms of Schottky‐Barrier‐Modulated Memristors based on 2D Semiconductor.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201252
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- Article
Impedance Spectroscopy on Hafnium Oxide‐Based Memristive Devices.
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- Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201227
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- Article