650 ps SET speed in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase change memory induced by TiO<sub>2</sub> dielectric crystal plane. | EBSCOhost

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Title: 650 ps SET speed in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase change memory induced by TiO<sub>2</sub> dielectric crystal plane.
Authors: Zhao, Ruizhe; Gao, Ke; Zhu, Rongjiang; Zhang, Zhuoran; He, Qiang; Xu, Ming; Yu, Niannian; Tong, Hao; Miao, Xiangshui
Publication: InfoMat, 2024, Vol 6, Issue 9, p1
ISSN: 2567-3165
Publication type: Academic Journal
DOI: 10.1002/inf2.12598