Works matching DE "ELECTRIC properties of silicon"

Results: 144

¿DESTRONANDO AL REY?: NUEVOS MATERIALES PARA LA ENERGÍA FOTOVOLTAICA.

Published in:

Revista Cubana de Física, 2023, v. 40, p. 2

By:

VAILLANT-ROCA, L.

Publication type:

Article

Light-Activated Electroactive Molecule-Based Memory Microcells Confined on a Silicon Surface.

Published in:

Angewandte Chemie, 2013, v. 125, n. 46, p. 12246, doi. 10.1002/ange.201304688

By:

Fabre, Bruno;
Li, Yan;
Scheres, Luc;
Pujari, Sidharam P.;
Zuilhof, Han

Publication type:

Article

A Stable Silene Substituted by Strong π-Donors at the Silicon Center.

Published in:

Angewandte Chemie, 2013, v. 125, n. 41, p. 11040, doi. 10.1002/ange.201304594

By:

Nakata, Norio;
Rodriguez, Ricardo;
Troadec, Thibault;
Saffon ‐ Merceron, Nathalie;
Sotiropoulos, Jean ‐ Marc;
Baceiredo, Antoine;
Kato, Tsuyoshi

Publication type:

Article

Rheological properties and related screen-printing performance of low-temperature silver pastes for a-Si:H/c-Si heterojunction solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 12, p. 5322, doi. 10.1007/s10854-014-2308-1

By:

Chen, Dongpo;
Zhao, Lei;
Diao, Hongwei;
Zhang, Wenbin;
Wang, Ge;
Wang, Wenjing

Publication type:

Article

Density improvement of Si quantum dots embedded in Si-rich silicon nitride films by light-filtering rapid thermal processing.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 12, p. 5410, doi. 10.1007/s10854-014-2321-4

By:

Chen, Xiaobo;
Yang, Peizhi

Publication type:

Article

Passivation and antireflection AZO:H layer in AZO:H/p-Si heterojunction solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 12, p. 5356, doi. 10.1007/s10854-014-2313-4

By:

Jiang, Qian;
Wang, Weiyan;
Zeng, Yuheng;
Xu, Wei;
Huang, Jinhua;
Zhou, Ti;
Song, Weijie

Publication type:

Article

Characterization of poly-Si thin-film solar cell functions and parameters with IR optical interaction techniques.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 10, p. 1553, doi. 10.1007/s10854-011-0450-6

By:

Boostandoost, M.;
Friedrich, F.;
Kerst, U.;
Boit, C.;
Gall, S.;
Yokoyama, Y.

Publication type:

Article

Coupled chemomechanics and phase field modeling of failure in electrode materials of Li-ion batteries.

Published in:

PAMM: Proceedings in Applied Mathematics & Mechanics, 2013, v. 13, n. 1, p. 207, doi. 10.1002/pamm.201310099

By:

Dal, Hüsnü;
Miehe, Christian

Publication type:

Article

The progress of novel binder as a non‐ignorable part to improve the performance of Si‐based anodes for Li‐ion batteries.

Published in:

International Journal of Energy Research, 2018, v. 42, n. 3, p. 919, doi. 10.1002/er.3826

By:

Huang, Shu;
Ren, Jianguo;
Liu, Rong;
Yue, Min;
Huang, Youyuan;
Yuan, Guohui

Publication type:

Article

Highly efficient poly(fluorene phenylene) copolymer as a new class of binder for high‐capacity silicon anode in lithium‐ion batteries.

Published in:

International Journal of Energy Research, 2018, v. 42, n. 3, p. 1148, doi. 10.1002/er.3913

By:

Yuca, Neslihan;
Cetintasoglu, Mehmet E.;
Dogdu, Murat F.;
Akbulut, Huseyin;
Tabanli, Sevcan;
Colak, Uner;
Taskin, Omer S.

Publication type:

Article

Recent advances in microdevices for electrochemical energy conversion and storage.

Published in:

International Journal of Energy Research, 2007, v. 31, n. 6/7, p. 548, doi. 10.1002/er.1280

By:

La O, Gerardo Jose;
Hyun Jin In;
Crumlin, Ethan;
Barbastathis, George;
Yang Shao-Horn

Publication type:

Article

The effect of the type of conductivity on the initiation and formation of pores in silicon during electrochemical etching.

Published in:

Doklady Chemistry, 2017, v. 477, n. 2, p. 271, doi. 10.1134/S0012500817120011

By:

Abramova, E.;
Khort, A.;
Yakovenko, A.;
Tsygankov, V.;
Slipchenko, E.;
Shvets, V.

Publication type:

Article

Contacting boron emitters on n-type silicon solar cells with aluminium-free silver screen-printing pastes.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 4, p. 305, doi. 10.1002/pssr.201510443

By:

Fritz, Susanne;
Engelhardt, Josh;
Ebert, Stefanie;
Hahn, Giso

Publication type:

Article

Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 2, p. 163, doi. 10.1002/pssr.201308209

By:

Ghoneim, Mohamed T.;
Rojas, Jhonathan P.;
Hussain, Aftab M.;
Hussain, Muhammad M.

Publication type:

Article

Back Cover: Mechanical and electronic properties of stoichiometric silicene and germanene oxides from first-principles (Phys. Status Solidi RRL 6/2013).

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 6, p. n/a, doi. 10.1002/pssr.201370433

By:

Wang, Yanli;
Ding, Yi

Publication type:

Article

Temperature Dependence of Renormalized Spin Susceptibility for Interacting 2D Electrons in Silicon.

Published in:

Journal of Superconductivity & Novel Magnetism, 2018, v. 31, n. 3, p. 723, doi. 10.1007/s10948-017-4329-5

By:

Pudalov, V. M.;
Gershenson, M. E.

Publication type:

Article

Preparing for the Post-Silicon Semiconductor Era.

Published in:

AAPPS Bulletin, 2015, v. 25, n. 2, p. 8

By:

JIN SANG KIM;
HYUN CHEOL KOO;
JEON-KOOK LEE;
SUNG WOOK MOON;
JIN DONG SONG;
YONG-WON SONG;
JOONYEON CHANG

Publication type:

Article

Carbon-silica sol-gel derived nanomaterials.

Published in:

Materials Science (0137-1339), 2005, v. 23, n. 1, p. 61

By:

Hübert, Thomas;
Shimamura, Aki;
Klyszcz, Andreas

Publication type:

Article

Polycrystalline silicon on glass for thin-film solar cells.

Published in:

Applied Physics A: Materials Science & Processing, 2009, v. 96, n. 1, p. 153, doi. 10.1007/s00339-009-5090-9

By:

Green, Martin A.

Publication type:

Article

Bulk solar grade silicon: how chemistry and physics play to get a benevolent microstructured material.

Published in:

Applied Physics A: Materials Science & Processing, 2009, v. 96, n. 1, p. 171, doi. 10.1007/s00339-008-4981-5

By:

Pizzini, S.

Publication type:

Article

Nanocystalline silicon solar cells.

Published in:

Applied Physics A: Materials Science & Processing, 2009, v. 96, n. 1, p. 145, doi. 10.1007/s00339-008-5017-x

By:

Rath, J. K.

Publication type:

Article

Low-dielectric-constant α-SiCOF film for ULSI interconnection prepared by PECVD with TEOS/C[sub 4] F[sub 8] /O[sub 2].

Published in:

Applied Physics A: Materials Science & Processing, 2001, v. 72, n. 6, p. 721, doi. 10.1007/s003390000562

By:

Wang, P.-F.;
Ding, S.-J.;
Zhang, J.-Y.;
Zhang, D.W.;
Wang, J.-T.;
Lee, W.W.

Publication type:

Article

Improvement of metal-ferroelectric-silicon structures without buffer layers between Si and ferroelectric films.

Published in:

Applied Physics A: Materials Science & Processing, 2001, v. 72, n. 1, p. 85, doi. 10.1007/s003390000568

By:

Li, W.P.;
Liu, Y.M.;
Zhang, R.;
Chen, J.;
Cheng, P.;
Yuan, X.L.;
Zhou, Y.G.;
Shen, B.;
Jiang, R.L.;
Shi, Y.;
Liu, Z.G.;
Zheng, Y.D.

Publication type:

Article

Photoionization of ground 1s2 2s2 2p61Se0 and excited 1s2 2S22p53S 3Po0,1,2 states of Si V using relativistic Breit–Pauli R-matrix method

Published in:

Canadian Journal of Physics, 2006, v. 84, n. 8, p. 707, doi. 10.1139/P06-062

By:

Jha, Alok K. S.;
Singh, Narendra;
Verma, Nupur;
Mohan, Man

Publication type:

Article

Electrical Breakdown in Pure n- and p-Si.

Published in:

Semiconductors, 2018, v. 52, n. 3, p. 273, doi. 10.1134/S1063782618030065

By:

Bannaya, V. F.;
Nikitina, E. V.

Publication type:

Article

Electronic Structure of Four-Element Clathrates of the Ba-Zn-Si-Ge System.

Published in:

Semiconductors, 2018, v. 52, n. 3, p. 282, doi. 10.1134/S1063782618030089

By:

Borshch, N. A.;
Kurganskii, S. I.

Publication type:

Article

Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO-Si structures.

Published in:

Semiconductors, 2016, v. 50, n. 9, p. 1156, doi. 10.1134/S1063782616090104

By:

Kalygina, V.;
Egorova, I.;
Novikov, V.;
Prudaev, I.;
Tolbanov, O.

Publication type:

Article

Graphene-oxide films printed on rigid and flexible substrates for a wide spectrum of applications.

Published in:

Semiconductors, 2016, v. 50, n. 8, p. 1065, doi. 10.1134/S1063782616080066

By:

Antonova, I.;
Kotin, I.;
Popov, V.;
Vasileva, F.;
Kapitonov, A.;
Smagulova, S.

Publication type:

Article

On the ohmicity of Schottky contacts.

Published in:

Semiconductors, 2016, v. 50, n. 6, p. 761, doi. 10.1134/S106378261606021X

By:

Sachenko, A.;
Belyaev, A.;
Konakova, R.

Publication type:

Article

Optical and electrical properties of silicon nanopillars.

Published in:

Semiconductors, 2015, v. 49, n. 7, p. 939, doi. 10.1134/S1063782615070088

By:

Golobokova, L.;
Nastaushev, Yu.;
Dultsev, F.;
Kryzhanovskaya, N.;
Moiseev, E.;
Kozhukhov, A.;
Latyshev, A.

Publication type:

Article

Variations in the electrical properties of silicon MOS structures with a nanodimensional silicon oxide under the effect of water vapors.

Published in:

Semiconductors, 2014, v. 48, n. 8, p. 1041, doi. 10.1134/S1063782614080119

By:

Fastykovsky, P.;
Glauberman, M.

Publication type:

Article

Effect of parameters of Ge(Si)/Si(001) self-assembled islands on their electroluminescence at room temperature.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 313, doi. 10.1134/S1063782609030105

By:

Lobanov, D. N.;
Novikov, A. V.;
Kudryavtsev, K. E.;
Shengurov, D. V.;
Drozdov, Yu. N.;
Yablonskiy, A. N.;
Shmagin, V. B.;
Krasilnik, Z. F.;
Zakharov, N. D.;
Werner, P.

Publication type:

Article

Formation kinetics of various types of hydrogen-related donors in proton-implanted silicon.

Published in:

Semiconductors, 2008, v. 42, n. 7, p. 873, doi. 10.1134/S1063782608070208

By:

Pokotilo, Yu. M.;
Petukh, A. N.;
Dzichkovski, O. A.

Publication type:

Article

Electronic characteristics of the singly ionized pair of phosphorus donors in silicon and operations with charge qubits.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 655, doi. 10.1134/S1063782608060055

By:

Voron'ko, A. N.

Publication type:

Article

Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 234, doi. 10.1134/S1063782606020229

By:

Berashevich, J. A.;
Lazarouk, S. K.;
Borisenko, V. E.

Publication type:

Article

Electrical Properties of Si:H/p-Si Structures Fabricated by Hydrogen Implantation.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 92, doi. 10.1134/1.1538545

By:

Naumova, O.V.;
Antonova, I.V.;
Popov, V.P.;
Stas', V.F.

Publication type:

Article

The Influence of Hydrogen Plasma on the Electroreflectance Spectrum and the Spectrum of Electron States of Porous Silicon.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 103, doi. 10.1134/1.1538547

By:

Venger, E.F.;
Holiney, R.Yu.;
Matveeva, L.A.;
Vasin, A.V.

Publication type:

Article

Effect of heat treatment on the photoelectric properties of Si(Zn) photodetectors.

Published in:

Semiconductors, 1999, v. 33, n. 3, p. 359, doi. 10.1134/1.1187695

By:

Astrova, E. V.;
Voronkov, V. B.;
Lebedev, A. A.;
Lodygin, A. N.;
Remenyuk, A. D.

Publication type:

Article

Effect of Annealing of Silver Electrodes on Photolithographically Fabricated Silicon Trenches for Photodetection Applications.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5212, doi. 10.1007/s11664-018-6396-1

By:

Azadgar, Navid;
Naderi, Nima;
Eshraghi, Mohamad Javad

Publication type:

Article

Determination of Low C Concentration in Czochralski-Grown Si for Solar Cell Applications by Liquid-N-Temperature Photoluminescence After Electron Irradiation.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5056, doi. 10.1007/s11664-018-6324-4

By:

Tajima, Michio;
Kiuchi, Hirotatsu;
Higuchi, Fumito;
Ishikawa, Yoichiro;
Ogura, Atsushi

Publication type:

Article

Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5039, doi. 10.1007/s11664-018-6299-1

By:

Li, Jiyang;
Song, Lihui;
Yu, Xuegong;
Yang, Deren

Publication type:

Article

Defect-Related Electroluminescence in the 1.2-1.7 μm Range from Boron-Implanted Silicon at Room Temperature.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 4970, doi. 10.1007/s11664-018-6194-9

By:

Gao, Yuhan;
Shen, Hao;
Cao, Jiahao;
Li, Dongsheng;
Yang, Deren

Publication type:

Article

Characteristics of a Pin–Fin Structure Thermoelectric Uni-Leg Device Using a Commercial n-Type MgSi Source.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 9, p. 1572, doi. 10.1007/s11664-010-1277-2

By:

Nemoto, Takashi;
Iida, Tsutomu;
Sato, Junichi;
Oguni, Yohei;
Matsumoto, Atsunobu;
Miyata, Takahiro;
Sakamoto, Tatsuya;
Nakajima, Tadao;
Taguchi, Hirohisa;
Nishio, Keishi;
Takanashi, Yoshifumi

Publication type:

Article

Structural study of supercooled liquid silicon.

Published in:

Philosophical Magazine, 2008, v. 88, n. 2, p. 171, doi. 10.1080/14786430701798944

By:

Kim, T. H.;
Goldman, A. I.;
Kelton, K. F.

Publication type:

Article

A High-Energy Li-Ion Battery Using a Silicon-Based Anode and a Nano-Structured Layered Composite Cathode.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 20, p. 3036, doi. 10.1002/adfm.201303766

By:

Chae, Changju;
Noh, Hyung‐Joo;
Lee, Jung Kyoo;
Scrosati, Bruno;
Sun, Yang‐Kook

Publication type:

Article

Field emission of multitip silicon structures with protection coatings.

Published in:

Technical Physics, 2016, v. 61, n. 11, p. 1711, doi. 10.1134/S1063784216110256

By:

Sominskii, G.;
Taradaev, E.;
Tumareva, T.;
Givargizov, M.;
Stepanova, A.

Publication type:

Article

Influence of microwave plasma microprocessing on the electronic properties of the (100)Si surface.

Published in:

Technical Physics, 2014, v. 59, n. 3, p. 411, doi. 10.1134/S1063784214030281

By:

Yafarov, R.;
Klimova, S.

Publication type:

Article

Influence of Growth Velocity on the Separation of Primary Silicon in Solidified Al-Si Hypereutectic Alloy Driven by a Pulsed Electric Current.

Published in:

Metals (2075-4701), 2017, v. 7, n. 6, p. 184, doi. 10.3390/met7060184

By:

Yunhu Zhang;
Chunyang Ye;
Yanyi Xu;
Honggang Zhong;
Xiangru Chen;
Xincheng Miao;
Changjiang Song;
Qijie Zhai

Publication type:

Article

Electronic properties investigation of silicon supersaturated with tellurium.

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 105, n. 4, p. 1021, doi. 10.1007/s00339-011-6537-3

By:

Li, Xinyi;
Han, Peide;
Gao, Lipeng;
Mao, Xue;
Hu, Shaoxu

Publication type:

Article

Thermal buckling analysis in InSb focal plane arrays detector.

Published in:

Journal of Mechanical Science & Technology, 2013, v. 27, n. 6, p. 1809, doi. 10.1007/s12206-013-0502-3

By:

Zhang, Xiaoling;
Meng, Qingduan;
Yu, Qian;
Zhang, Liwen;
Lv, Yanqiu

Publication type:

Article