Works matching DE "THRESHOLD voltage"

Results: 1689

Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices.

Published in:

Micromachines, 2025, v. 16, n. 5, p. 514, doi. 10.3390/mi16050514

By:

Liu, Li;
Zhen, Yulu;
Li, Siqiao;
Pang, Bo;
Zeng, Kai

Publication type:

Article

Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 5, p. 3480, doi. 10.1007/s11664-024-11548-1

By:

Chowdhury, Dibyendu;
DasMahapatra, Suddhendu;
De, Bishnu Prasad;
Maiti, Madhusudan;
Kar, Rajib;
Mandal, Durbadal;
Samanta, Jagannath

Publication type:

Article

Design and Performance Evaluation of a Heterojunction GaAs/GaSb PC-TFET for Label-Free Biosensing Applications: Design and Performance Evaluation...: M. K. Bind et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 1691, doi. 10.1007/s11664-024-11643-3

By:

Bind, Mukesh Kumar;
Singh, Sajai Vir;
Nigam, Kaushal Kumar

Publication type:

Article

Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated InAlGaN/GaN MIS-HEMTs Using ZrO2 Seed Layers: Improved Ferroelectric Effects and Gate Controllability in Hf0.5Zr0.5O2-Gated...: Tien-Han Yu et al

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 2, p. 1096, doi. 10.1007/s11664-024-11600-0

By:

Yu, Tien-Han;
Chen, Yu-Lin;
Tsao, Yi-Fan;
Hsu, Chin-Tsai;
Lu, Tsan-Feng;
Hsu, Heng-Tung

Publication type:

Article

Alignment Effects Near Edges of Electrodes on Negative and Positive Dielectric Anisotropy Liquid Crystals Using In-Plane Switching Fields.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 2, p. 1066, doi. 10.1007/s11664-024-11501-2

By:

Sharma, Vandna;
Kumar, Pankaj

Publication type:

Article

Engineered Amorphous Indium Oxide Thin-Film Transistors for Electrical Performance Enhancement by Focused Oxygen Plasma Treatment: Engineered Amorphous Indium Oxide Thin-Film Transistors for Electrical Performance Enhancement by Focused Oxygen Plasma Treatment: H.-L. Zhao and S.-J. Kim

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 1, p. 800, doi. 10.1007/s11664-024-11597-6

By:

Zhao, Han-Lin;
Kim, Sung-Jin

Publication type:

Article

The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 11, p. 7057, doi. 10.1007/s11664-024-11396-z

By:

Liu, Bingtao;
Huan, Changmeng;
Cai, Yongqing;
Ke, Qingqing

Publication type:

Article

Ab Initio Materials Modeling of Point Defects in a High-κ Metal Gate Stack of Scaled CMOS Devices: Variability Versus Engineering the Effective Work Function.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 10, p. 6303, doi. 10.1007/s11664-024-11347-8

By:

Pandey, Rajan Kumar

Publication type:

Article

Switching Behavior and Negative Differential Resistance in a Carbon Matrix Based on Resorcinol-Formaldehyde.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5439, doi. 10.1007/s11664-024-11253-z

By:

Jeidi, H.;
Najeh, I.;
Chouiref, L.;
Erouel, M.;
Ahmed, W.;
Gomes, H. L.;
El Mir, L.

Publication type:

Article

A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 8, p. 4287, doi. 10.1007/s11664-024-11177-8

By:

Deshpande, Gauri;
Bhattacharya, Sandip;
Ajayan, J.;
Mounika, B.;
Nirmal, D.

Publication type:

Article

Gate Leakage Suppression and Threshold Voltage Stability Improvement in GaN-Based Enhancement-Mode HEMTs on Ultrathin-Barrier AlGaN/GaN Heterostructures with a p-Doping-Free GaN Cap.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3926, doi. 10.1007/s11664-024-11156-z

By:

Wang, Yuhao;
Huang, Sen;
Jiang, Qimeng;
Wang, Xinhua;
Guo, Fuqiang;
Feng, Chao;
Fan, Jie;
Yin, Haibo;
Gao, Xinguo;
Wei, Ke;
Zheng, Yingkui;
Liu, Xinyu

Publication type:

Article

High-κ Oxide Charge Engineering on GaN for Normally Off HEMTs.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3415, doi. 10.1007/s11664-024-11074-0

By:

Das, Partha

Publication type:

Article

Performance Evaluation of Nano-scale Core–Shell Junctionless FETs in the Designing of Ultralow-Power Inverter and Ring Oscillator.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 3100, doi. 10.1007/s11664-024-11088-8

By:

Seifollahi, Samaneh;
Ziabari, Seyed Ali Sedigh;
kiani-Sarkaleh, Azadeh

Publication type:

Article

Investigation of the Electrical Parameters in a Partially Extended Ge-Source Double-Gate Tunnel Field-Effect Transistor (DG-TFET).

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2999, doi. 10.1007/s11664-024-10997-y

By:

Singh, Omendra Kr;
Dhandapani, Vaithiyanathan;
Kaur, Baljit

Publication type:

Article

Research on a High-Threshold-Voltage AlGaN/GaN HEMT with P-GaN Cap and Recessed Gate in Combination with Graded AlGaN Barrier Layer.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2533, doi. 10.1007/s11664-024-10968-3

By:

Chen, Zhichao;
Cai, Lie;
Niu, Kai;
Xu, Chaozhi;
Lin, Haoxiang;
Ren, Pengpeng;
Sun, Dong;
Lin, Haifeng

Publication type:

Article

Memory switching characteristics in amorphous ZnIn2Se4 thin films.

Published in:

Surface Engineering, 2015, v. 31, n. 7, p. 556, doi. 10.1179/1743294415Y.0000000001

By:

Dhruv, D. K.;
Nowicki, A.;
Patel, B. H.;
Dhamecha, V. D.

Publication type:

Article

Electronic and Charge Transport Properties in Bridged versus Unbridged Nanohoops: Role of the Nanohoop Size.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 41, p. 1, doi. 10.1002/chem.202300934

By:

Lucas, Fabien;
Brouillac, Clément;
McIntosh, Nemo;
Giannini, Samuele;
Rault‐Berthelot, Joëlle;
Lebreton, Christophe;
Beljonne, David;
Cornil, Jérôme;
Jacques, Emmanuel;
Quinton, Cassandre;
Poriel, Cyril

Publication type:

Article

Enhancing the Resistive Switching Behavior of WORM Memory Devices Using D−π−A Based Ester‐Flanked Quinolines**.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 8, p. 1, doi. 10.1002/chem.202202569

By:

Angela, Varghese M.;
Harshini, Deivendran;
Anjali, Anshika;
Imran, Predhanekar M.;
Bhuvanesh, Nattamai S. P.;
Nagarajan, Samuthira

Publication type:

Article

Ternary Conductance Switching Realized by a Pillar[5]arene‐Functionalized Two‐Dimensional Imine Polymer Film.

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 54, p. 13605, doi. 10.1002/chem.202101772

By:

Song, Yaru;
Feng, Guangyuan;
Sun, Chenfang;
Liang, Qiu;
Wu, Lingli;
Yu, Xi;
Lei, Shengbin;
Hu, Wenping

Publication type:

Article

A Solution-Processable Donor-Acceptor Compound Containing Boron(III) Centers for Small-Molecule-Based High-Performance Ternary Electronic Memory Devices.

Published in:

Angewandte Chemie, 2015, v. 127, n. 36, p. 10715, doi. 10.1002/ange.201504997

By:

Poon, Chun ‐ Ting;
Wu, Di;
Lam, Wai Han;
Yam, Vivian Wing ‐ Wah

Publication type:

Article

Solution processed boron doped indium oxide thin-film as channel layer in thin-film transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18696, doi. 10.1007/s10854-019-02222-y

By:

Arulkumar, S.;
Parthiban, S.;
Gnanaprakash, D.;
Kwon, J. Y.

Publication type:

Article

Low-temperature reducible particle-free screen-printable silver ink for the fabrication of high conductive electrodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18647, doi. 10.1007/s10854-019-02217-9

By:

Manjunath, G.;
Pujar, Pavan;
Gupta, Bikesh;
Gupta, Dipti;
Mandal, Saumen

Publication type:

Article

Prediction of the electrical response of solution-processed thin-film transistors using multifactorial analysis.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 18, p. 16939, doi. 10.1007/s10854-019-01695-1

By:

Braga, João P.;
Moises, Lucas A.;
Gozzi, Giovani;
Fugikawa-Santos, Lucas

Publication type:

Article

Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 14, p. 12929, doi. 10.1007/s10854-019-01655-9

By:

Lin, Dong;
Zheng, Xudong;
Yang, Jianwen;
Li, Kaiwen;
Shao, Jingjing;
Zhang, Qun

Publication type:

Article

Influence of thermal treatment on the nonlinear current-voltage behavior and restoration hysteresis effect of CaCuTiO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 10, p. 10816, doi. 10.1007/s10854-016-5188-8

By:

Xiao, Mi;
Hu, Quan

Publication type:

Article

Morphological and electrophysiological properties of serotonin neurons with NMDA modulation in the mesencephalic locomotor region of neonatal ePet-EYFP mice.

Published in:

Experimental Brain Research, 2019, v. 237, n. 12, p. 3333, doi. 10.1007/s00221-019-05675-z

By:

Ge, Renkai;
Chen, Ke;
Cheng, Yi;
Dai, Yue

Publication type:

Article

Three-week treadmill training changes the electrophysiological properties of spinal interneurons in the mice.

Published in:

Experimental Brain Research, 2019, v. 237, n. 11, p. 2925, doi. 10.1007/s00221-019-05647-3

By:

Chen, Ke;
Ge, Renkai;
Cheng, Yi;
Dai, Yue

Publication type:

Article

Design of CMOS Based LC-Voltage Control Oscillator Using Substrate Bias Effect and Current Mirror Technique.

Published in:

Wireless Personal Communications, 2024, v. 138, n. 2, p. 1351, doi. 10.1007/s11277-024-11567-5

By:

Suresh, N.;
Kumar, S. Ashok;
Kamatham, Harikrishna

Publication type:

Article

Fading of pMOS dosimeters over a long period of time.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2022, v. 17, n. 7, p. 155, doi. 10.1049/mna2.12119

By:

Ristić, Goran S.;
Andjelković, Marko S.;
Duane, Russell;
Jakšić, Aleksandar B.

Publication type:

Article

Impact of non-uniformly doped double-gate junctionless transistor on the performance of 6T-SRAM bitcell.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2020, v. 15, n. 2, p. 72, doi. 10.1049/mnl.2019.0375

By:

Panigrahi, Spandita;
Sahu, Prasanna Kumar;
Lenka, Annada Shankar

Publication type:

Article

Fabrication of QDNVM-based comparator.

Published in:

Micro & Nano Letters (Wiley-Blackwell), 2019, v. 14, n. 9, p. 947, doi. 10.1049/mnl.2018.5450

By:

Karmakar, Supriya;
Gogna, Mukesh;
Jain, Faquir

Publication type:

Article

Modeling, state of charge estimation, and charging of lithium‐ion battery in electric vehicle: A review.

Published in:

International Journal of Energy Research, 2022, v. 46, n. 3, p. 2141, doi. 10.1002/er.7339

By:

Adaikkappan, Maheshwari;
Sathiyamoorthy, Nageswari

Publication type:

Article

Concept of Photoactive Invisible Inks toward Ultralow‐Cost Fabrication of Transistor Photomemories.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201147

By:

Prakoso, Suhendro Purbo;
Li, Yen‐Ting;
Lai, Juin‐Yih;
Chiu, Yu‐Cheng

Publication type:

Article

Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201117

By:

Jin, Jidong;
Lin, Xiaoyu;
Zhang, Jiawei;
Lee, Jeongho;
Xiao, Zhenyuan;
Lee, Soobin;
Kim, Jaekyun

Publication type:

Article

Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201109

By:

Park, Jingyu;
Choi, Sungju;
Kim, Changwook;
Shin, Hong Jae;
Jeong, Yun Sik;
Bae, Jong Uk;
Oh, Chang Ho;
Oh, Saeroonter;
Kim, Dae Hwan

Publication type:

Article

Accurate Field‐Effect Mobility and Threshold Voltage Estimation for Thin‐Film Transistors with Gate‐Voltage‐Dependent Mobility in Linear Region.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200786

By:

Zhou, Yuchen;
Wang, Xiao;
Dodabalapur, Ananth

Publication type:

Article

Suppressing Undesired Channel Length‐Dependent Electrical Characteristics of Fully Integrated InGaZnO Thin‐Film Transistors via Defect Control Layer.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200986

By:

Kim, Kyung Min;
Yang, Jeong Suk;
Kim, Hyung Tae;
Han, Inhyo;
Jung, Sang‐Hoon;
Yang, Joon‐Young;
Ha, Yong Min;
Yoon, Soo Young;
Kim, Hyun Jae

Publication type:

Article

Electrically Tuning Interfacial Ion Redistribution for mica/WSe2 Memory Transistor.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200679

By:

Yang, Zhihao;
Wang, Dong;
Wang, Shaoyuan;
Tan, Chao;
Yang, Lei;
Wang, Zegao

Publication type:

Article

Low‐Voltage and High Thermal Stability Single‐Element Te Selector with Failed Bit Pruning Operation Enabling Robust Cross‐Point Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200870

By:

Ding, Yaxin;
An, Junjie;
Shen, Jiabin;
Jia, Shujing;
Guo, Jingrui;
Wang, Lingfei;
Gong, Tiancheng;
Jiang, Pengfei;
Wang, Yuan;
Chen, Yuting;
Zhu, Min;
Dou, Chunmeng;
Luo, Qing

Publication type:

Article

Resistive Switching in Ag2Te Semiconductor Modulated by Ag+‐Ion Diffusion and Phase Transition.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200850

By:

Guo, Anan;
Bai, Hui;
Liang, Qi;
Feng, Liping;
Su, Xianli;
Van Tendeloo, Gustaaf;
Wu, Jinsong

Publication type:

Article

Interface Trap‐Free, 100% Yield, Wafer‐Scale, Non‐Volatile Optically‐Guided Memory Array from Cumulatively‐Stacked Small Molecules/Fluoropolymer/Copper‐Oxide Nanoparticles Heterostructure.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200752

By:

Kim, Seongjae;
Seo, Juhyung;
Park, Taehyun;
Yoo, Hocheon

Publication type:

Article

An OFET‐Based Involutive Logic Circuit with Wide‐Range Threshold Shift Compensability.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200442

By:

Yan, Yongkun;
Wu, Yangjiang;
Shao, Lin;
Yang, Longfei;
Wu, Zeng;
Li, Wenhao;
Yi, Zhengran;
Liu, Yunqi;
Zhao, Yan

Publication type:

Article

Inverter and Ternary Content‐Addressable Memory Based on Carbon Nanotube Transistors Using Chemical Doping Strategy.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200424

By:

He, Nian;
Yuan, Qi;
Wang, Yufei;
Sun, Yanmei;
Wen, Dianzhong

Publication type:

Article

Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200225

By:

Xie, Fangqing;
Ducry, Fabian;
Luisier, Mathieu;
Leuthold, Juerg;
Schimmel, Thomas

Publication type:

Article

Comprehensive Study on High Purity Semiconducting Carbon Nanotube Extraction.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101377

By:

Srimani, Tathagata;
Ding, Jianfu;
Yu, Andrew;
Kanhaiya, Pritpal;
Lau, Christian;
Ho, Rebecca;
Humes, Jefford;
Kingston, Christopher T.;
Malenfant, Patrick R.L.;
Shulaker, Max M.

Publication type:

Article

Tunneling‐Effect‐Boosted Interfacial Charge Trapping toward Photo‐Organic Transistor Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101349

By:

Wei, Zi‐Yuan;
Prakoso, Suhendro Purbo;
Li, Yen‐Ting;
Chiu, Yu‐Cheng

Publication type:

Article

Efficient Oxygen‐Vacancy Suppression and Electrical Stabilization of Solution‐Processed In2O3:Q (Q = S, Se) Thin‐Film Transistor with Chalcogen Alloying.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101250

By:

Lee, Paul;
Le, Minh Nhut;
Kim, Gahye;
Kwon, Sung Min;
Jo, Jeong‐Wan;
Kim, Jaehyun;
Kim, Yong‐Hoon;
Park, Sung Kyu;
Ahn, Kyunghan;
Kim, Myung‐Gil

Publication type:

Article

Perhydropolysilazane Charge‐Trap Layer in Solution‐Processed Organic and Oxide Memory Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101079

By:

Boampong, Amos Amoako;
Lee, Sang‐Hoon;
Lee, Jonghee;
Choi, Yoonseuk;
Kim, Min‐Hoi

Publication type:

Article

Excessive Oxygen Peroxide Model‐Based Analysis of Positive‐Bias‐Stress and Negative‐Bias‐Illumination‐Stress Instabilities in Self‐Aligned Top‐Gate Coplanar In–Ga–Zn–O Thin‐Film Transistors

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101062

By:

Choi, Sungju;
Park, Jingyu;
Hwang, Seong‐Hyun;
Kim, Changwook;
Kim, Yong‐Sung;
Oh, Saeroonter;
Baeck, Ju Heyuck;
Bae, Jong Uk;
Noh, Jiyong;
Lee, Seok‐Woo;
Park, Kwon‐Shik;
Kim, Jeom‐Jae;
Yoon, Soo Young;
Kwon, Hyuck‐In;
Kim, Dae Hwan

Publication type:

Article

Silk Protein Based Volatile Threshold Switching Memristors for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202101139

By:

Zhao, Momo;
Wang, Saisai;
Li, Dingwei;
Wang, Rui;
Li, Fanfan;
Wu, Mengqi;
Liang, Kun;
Ren, Huihui;
Zheng, Xiaorui;
Guo, Chengchen;
Ma, Xiaohua;
Zhu, Bowen;
Wang, Hong;
Hao, Yue

Publication type:

Article