Works matching Electron mobility

Results: 5000

Effect of Strain in Channel on Electron Transport Properties of Ga1−xInxSb High Electron Mobility Transistor Structures with Strained‐Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 8, p. 1, doi. 10.1002/pssa.202200529

By:

Endoh, Akira;
Hatori, Koharu;
Kishimoto, Naoyuki;
Hiraoka, Mizuho;
Kemmochi, Yuta;
Endoh, Yuki;
Osawa, Koki;
Hayashi, Takuya;
Machida, Ryuto;
Watanabe, Issei;
Yamashita, Yoshimi;
Hara, Shinsuke;
Kasamatsu, Akifumi;
Fujishiro, Hiroki I.

Publication type:

Article

The Origin and Influence of Compensatory Current in AlGaN/GaN Type High Electron Mobility Transistor Heterostructures with Two Conducting Channels on the Hall Measurements.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 9, p. 1, doi. 10.1002/pssa.201900661

By:

Glinkowski, Mateusz;
Paszkiewicz, Bogdan;
Wośko, Mateusz;
Paszkiewicz, Regina

Publication type:

Article

Al‐Rich AlGaN Channel High Electron Mobility Transistors on Silicon: A Relevant Approach for High Temperature Stability of Electron Mobility.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 1, p. 1, doi. 10.1002/aelm.202400069

By:

Bassaler, Julien;
Mehta, Jash;
Abid, Idriss;
Konczewicz, Leszek;
Juillaguet, Sandrine;
Contreras, Sylvie;
Rennesson, Stéphanie;
Tamariz, Sebastian;
Nemoz, Maud;
Semond, Fabrice;
Pernot, Julien;
Medjdoub, Farid;
Cordier, Yvon;
Ferrandis, Philippe

Publication type:

Article

Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer.

Published in:

Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 4, p. 1, doi. 10.1002/pssr.202100573

By:

Tang, Jinjin;
Liu, Guipeng;
Mao, Bangyao;
Zhao, Guijuan;
Yang, Jianhong

Publication type:

Article

Electron mobility influenced by optical phonons in AlGaN/GaN MISHEMTs with different gate dielectrics.

Published in:

Applied Physics A: Materials Science & Processing, 2020, v. 126, n. 10, p. 1, doi. 10.1007/s00339-020-04005-3

By:

Zhou, Xiaojuan;
Wang, Zhiping;
Qu, Yuan;
Ban, Shiliang

Publication type:

Article

Water-Soluble Lacunary Polyoxometalates with Excellent Electron Mobilities and Hole Blocking Capabilities for High Efficiency Fluorescent and Phosphorescent Organic Light Emitting Diodes.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 16, p. 2655, doi. 10.1002/adfm.201504832

By:

Tountas, Marinos;
Topal, Yasemin;
Kus, Mahmut;
Ersöz, Mustafa;
Fakis, Mihalis;
Argitis, Panagiotis;
Vasilopoulou, Maria

Publication type:

Article

Thionation Enhances the Electron Mobility of Perylene Diimide for High Performance n-Channel Organic Field Effect Transistors.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 22, p. 3321, doi. 10.1002/adfm.201500837

By:

Tilley, Andrew J.;
Guo, Chang;
Miltenburg, Mark B.;
Schon, Tyler B.;
Yan, Han;
Li, Yuning;
Seferos, Dwight S.

Publication type:

Article

Understanding Local and Macroscopic Electron Mobilities in the Fullerene Network of Conjugated Polymer-based Solar Cells: Time-Resolved Microwave Conductivity and Theory.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 6, p. 784, doi. 10.1002/adfm.201301757

By:

Aguirre, Jordan C.;
Arntsen, Christopher;
Hernandez, Samuel;
Huber, Rachel;
Nardes, Alexandre M.;
Halim, Merissa;
Kilbride, Daniel;
Rubin, Yves;
Tolbert, Sarah H.;
Kopidakis, Nikos;
Schwartz, Benjamin J.;
Neuhauser, Daniel

Publication type:

Article

ELECTRON MOBILITY NOISE SPECTRAL DENSITY AND VARIANCE IN A SEMICONDUCTOR.

Published in:

Armenian Journal of Physics, 2014, v. 7, n. 4, p. 224

By:

Melkonyan, S. V.;
Zalinyan, T. A.;
Harutyunyan, A. L.

Publication type:

Article

HIGH-PERFORMANCE 50-NM METAMORPHIC HIGH ELECTRON-MOBILITY TRANSISTORS WITH HIGH BREAKDOWN VOLTAGES.

Published in:

International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 107, doi. 10.1142/S012915640900614X

By:

XU, DONG;
KONG, WENDELL M.T.;
YANG, XIAOPING;
SEEKELL, P.;
MOHNKERN, L.;
KARIMY, H.;
DUH, K.H.G.;
SMITH, P.M.;
CHAO, P.C.

Publication type:

Article

Mobility Relaxation of Holes and Electrons in Polymer:Fullerene and Polymer : Non‐Fullerene Acceptor Solar Cells.

Published in:

ChemSusChem, 2021, v. 14, n. 17, p. 3528, doi. 10.1002/cssc.202100566

By:

Hamada, Fumiya;
Saeki, Akinori

Publication type:

Article

Electron mobility and drain current in strained-Si MOSFET.

Published in:

Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 3, p. 84, doi. 10.26636/jtit.2007.3.835

By:

Walczak, Jakub;
Majkusiak, Bogdan

Publication type:

Article

Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900818

By:

Patwal, Shashank;
Agrawal, Manvi;
Radhakrishnan, K.;
Seah, Tian Long Alex;
Dharmarasu, Nethaji

Publication type:

Article

Creation of Two‐Dimensional Electron Gas and Role of Surface Donors in III‐N Metal‐Oxide‐Semiconductor High‐Electron Mobility Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 24, p. N.PAG, doi. 10.1002/pssa.201800090

By:

Gucmann, Filip;
Ťapajna, Milan;
Pohorelec, Ondrej;
Haščík, Štefan;
Hušeková, Kristína;
Kuzmík, Ján

Publication type:

Article

Demonstration of Temperature-Dependent Analysis of GAA – β-(AlGa)2O3/Ga2O3 High Electron Mobility Transistor.

Published in:

IETE Journal of Research, 2023, v. 69, n. 12, p. 9128, doi. 10.1080/03772063.2022.2098185

By:

Ranjan, Ravi;
Kashyap, Nitesh;
Raman, Ashish

Publication type:

Article

Doping-Dependent Nonlinear Electron Mobility in GaAs|InxGa1 –xAs Coupled Quantum-Well Pseudo-Morphic MODFET Structure.

Published in:

Semiconductors, 2020, v. 54, n. 7, p. 788, doi. 10.1134/S1063782620070118

By:

Panda, S. R.;
Sahu, A.;
Das, S.;
Panda, A. K.;
Sahu, T.

Publication type:

Article

Non-monotonic Size Dependence of Electron Mobility in Indium Oxide Nanocrystals Thin Film Transistor.

Published in:

Bulletin of the Korean Chemical Society, 2014, v. 35, n. 8, p. 2505, doi. 10.5012/bkcs.2014.35.8.2505

By:

Hien Thu Pham;
Hyun-Dam Jeong

Publication type:

Article

Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 10, p. 1718, doi. 10.3390/nano12101718

By:

Cui, Peng;
Zeng, Yuping

Publication type:

Article

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment.

Published in:

Crystals (2073-4352), 2022, v. 12, n. 11, p. 1521, doi. 10.3390/cryst12111521

By:

Chen, Siheng;
Cui, Peng;
Xu, Mingsheng;
Lin, Zhaojun;
Xu, Xiangang;
Zeng, Yuping;
Han, Jisheng

Publication type:

Article

Investigating the effects of impurity on electron mobility in quasi-one-dimensional wires.

Published in:

Modern Physics Letters B, 2023, v. 37, n. 27, p. 1, doi. 10.1142/S0217984923501051

By:

Bahrami, Bahram;
Kiamehr, Zeynab;
Sharafi, Batol;
Goodarzi, Mojtaba

Publication type:

Article

Structural design and molecular beam epitaxy growth of GaAs and InAs heterostructures for high mobility two-dimensional electron gas.

Published in:

Quantum Frontiers, 2024, v. 3, n. 1, p. 1, doi. 10.1007/s44214-024-00061-5

By:

Wang, Tiantian;
Song, Huading;
He, Ke

Publication type:

Article

Electron mobility limited by scattering from threading dislocation lines within gallium nitride.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2016, v. 30, n. 9, p. -1, doi. 10.1142/S0217979216500508

By:

Mohammad Alavi, Seyed;
Bagani, Erfan

Publication type:

Article

Synergistic Use of Pyridine and Selenophene in a Diketopyrrolopyrrole‐Based Conjugated Polymer Enhances the Electron Mobility in Organic Transistors.

Published in:

Advanced Functional Materials, 2020, v. 30, n. 34, p. 1, doi. 10.1002/adfm.202000489

By:

Liu, Qian;
Kumagai, Shohei;
Manzhos, Sergei;
Chen, Yingqian;
Angunawela, Indunil;
Nahid, Masrur Morshed;
Feron, Krishna;
Bottle, Steven E.;
Bell, John;
Ade, Harald;
Takeya, Jun;
Sonar, Prashant

Publication type:

Article

Enhancing Device Performance with High Electron Mobility GeSn Materials.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 5, p. 1, doi. 10.1002/aelm.202400561

By:

Junk, Yannik;
Concepción, Omar;
Frauenrath, Marvin;
Sun, Jingxuan;
Bae, Jin Hee;
Bärwolf, Florian;
Mai, Andreas;
Hartmann, Jean‐Michel;
Grützmacher, Detlev;
Buca, Dan;
Zhao, Qing‐Tai

Publication type:

Article

Bar‐Coated Organic Thin‐Film Transistors with Reliable Electron Mobility Approaching 10 cm2 V−1 s−1.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1002/aelm.201901002

By:

Bai, Junhua;
Jiang, Yu;
Wang, Zhongli;
Sui, Ying;
Deng, Yunfeng;
Han, Yang;
Geng, Yanhou

Publication type:

Article

DISLOCATION SCATTERING-LIMITED ELECTRON MOBILITY IN WURTZITE n-TYPE GALLIUM NITRIDE.

Published in:

Journal of Ovonic Research, 2016, v. 12, n. 3, p. 147

By:

ALFARAMAWI, K.

Publication type:

Article

A Macroscopic Approach to Determine Electron Mobilities in Low-Density Helium.

Published in:

Journal of Low Temperature Physics, 2011, v. 162, n. 5/6, p. 702, doi. 10.1007/s10909-010-0325-x

By:

Aitken, F.;
Bonifaci, N.;
Denat, A.;
Haeften, K.

Publication type:

Article

Investigation of Nano-Heat-Transfer Variability of AlGaN/GaN-Heterostructure-Based High-Electron-Mobility Transistors.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 1, p. 164, doi. 10.3390/electronics13010164

By:

Mzoughi, Haikel;
Nasri, Faouzi;
Almoneef, Maha;
Soltani, Sonia;
Mbarek, Mohamed;
Guizani, Amenallah

Publication type:

Article

Determination of Electron Mobility in Small Molecular 1,4-di(bis(8-hydroxyquinoline)aluminum-oxy)benzene by Transient Electroluminescence.

Published in:

Indian Journal of Pure & Applied Physics, 2023, v. 61, n. 5, p. 366, doi. 10.56042/ijpap.v61i5.68768

By:

Tripathi, Aparna;
Kumar, Pankaj

Publication type:

Article

Computational Search for Two-Dimensional MX2 Semiconductors with Possible High Electron Mobility at Room Temperature.

Published in:

Materials (1996-1944), 2016, v. 9, n. 9, p. 716, doi. 10.3390/ma9090716

By:

Zhishuo Huang;
Wenxu Zhang;
Wanli Zhang

Publication type:

Article

Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 35, p. -1, doi. 10.1142/S021798491650411X

By:

Liu, Yan;
Lin, Zhao-Jun;
Yang, Ming;
Luan, Chong-Biao;
Wang, Yu-Tang;
Lv, Yuan-Jie;
Feng, Zhi-Hong

Publication type:

Article

Composition and concentration dependences of electron mobility in semi-metal Hg1-xCdxTe quantum wells.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 297, doi. 10.15407/spqeo18.03.297

By:

Melezhik, E. O.;
Gumenjuk-Sichevska, J. V.;
Sizov, F. F.

Publication type:

Article

Steady-State Electron Transport and Low-Field Mobility of Wurtzite Bulk ZnO and ZnMgO.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 466, doi. 10.1007/s11664-011-1516-1

By:

Yarar, Z.

Publication type:

Article

Oscillation of Electron Mobility in V‐Shaped Double Quantum Well Structure Under Applied Electric Field.

Published in:

Physica Status Solidi (B), 2019, v. 256, n. 5, p. N.PAG, doi. 10.1002/pssb.201800337

By:

Palo, Sangeeta K.;
Sahoo, Narayan;
Panda, Ajit K.;
Sahu, Trinath

Publication type:

Article

Electron Mobility in Al xGa1 −xAs Based Square-Parabolic Double Quantum Well HEMT Structure − Effect of Asymmetric Doping Profile.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 11, p. n/a, doi. 10.1002/pssb.201700221

By:

Sahoo, Narayan;
Panda, Ajit K.;
Sahu, Trinath

Publication type:

Article

Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1− xSn x Alloy.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 11, p. n/a, doi. 10.1002/pssb.201700244

By:

Mukhopadhyay, Bratati;
Sen, Gopa;
Basu, Rikmantra;
Mukhopadhyay, Shyamal;
Basu, Prasanta Kumar

Publication type:

Article

Accelerated sunlight photocatalysis through improved electron mobility between g-C3N4 and BiPO4 nanomaterial.

Published in:

Environmental Science & Pollution Research, 2022, v. 29, n. 57, p. 86068, doi. 10.1007/s11356-021-16449-y

By:

Ng, Jit Jang;
Sim, Lan Ching;
Oh, Wen-Da;
Saravanan, Pichiah;
Tan, Bo;
Leong, Kah Hon

Publication type:

Article

Functionalized Benzothiadiazole Non‐Fused A−D−A'−D−A Small Molecules for Effective Electron Mobilities and Metal‐free Photocatalysis.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 26, p. 1, doi. 10.1002/chem.202203951

By:

Pratap Tripathi, Narendra;
Gupta, Vidushi;
Tarun, Tarun;
Kumar Pandey, Upendra;
Sengupta, Sanchita

Publication type:

Article

Electron Mobility Non-Damping Fluctuations in Semiconductors.

Published in:

Fluctuation & Noise Letters, 2018, v. 17, n. 2, p. -1, doi. 10.1142/S0219477518500189

By:

Melkonyan, Slavik V.;
Zalinyan, Tigran A.;
Melkonyan, Sargis S.

Publication type:

Article

Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy.

Published in:

Photonics, 2023, v. 10, n. 7, p. 800, doi. 10.3390/photonics10070800

By:

Khan, Sahanowaj;
Acharyya, Aritra;
Inokawa, Hiroshi;
Satoh, Hiroaki;
Biswas, Arindam;
Dhar, Rudra Sankar;
Banerjee, Amit;
Seteikin, Alexey Y.

Publication type:

Article

50-NM SELF-ALIGNED HIGH ELECTRON-MOBILITY TRANSISTORS ON GaAs SUBSTRATES WITH EXTREMELY HIGH EXTRINSIC TRANSCONDUCTANCE AND HIGH GAIN.

Published in:

International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 393, doi. 10.1142/S0129156411006672

By:

XU, DONG;
YANG, XIAOPING;
SEEKELL, P.;
PLEASANT, L. MT.;
ISAAK, R.;
KONG, W.M.T.;
CUEVA, G.;
CHU, K.;
MOHNKERN, L.;
SCHLESINGER, L.;
STEDMAN, R.;
KARIMY, H.;
CARNEVALE, R.;
VERA, A.;
GOLJA, B.;
DUH, K.H.G.;
SMITH, P.M.;
CHAO, P.C.

Publication type:

Article

High electron mobility due to extra π-conjugation in the end-capped units of non-fullerene acceptor molecules: a DFT/TD-DFT-based prediction.

Published in:

Journal of Molecular Modeling, 2022, v. 28, n. 9, p. 1, doi. 10.1007/s00894-022-05283-9

By:

Iqbal, Malik Muhammad Asif;
Mehboob, Muhammad Yasir;
Hassan, Talha;
Khan, Muhammad Shahzeb;
Arshad, Muhammad

Publication type:

Article

High Electron Mobility AlN on Sapphire (0001) with a Low Dislocation Density Prepared via Sputtering and High‐Temperature Annealing.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 16, p. 1, doi. 10.1002/pssa.202100074

By:

Sakurai, Yuya;
Ueno, Kohei;
Kobayashi, Atsushi;
Uesugi, Kenjiro;
Miyake, Hideto;
Fujioka, Hiroshi

Publication type:

Article

Manipulating Molecular Stacking to Achieve High Electron Mobility in 2D Conjugated Ultra‐Narrow Bandgap Non‐Fullerene Acceptors with Absorption Beyond 1000 nm.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 40, p. 1, doi. 10.1002/adfm.202405728

By:

Liao, Xunfan;
Liu, Mingtao;
Xie, Wenchao;
Wang, Junwei;
Zhu, Peipei;
Yu, Shicheng;
Fu, Yuang;
Lu, Xinhui;
Feng, Kui;
Guo, Xugang;
Chen, Yiwang

Publication type:

Article

Design of a High-Efficiency Micro-Inverter with TO-220 Packaged Gallium Nitride - High-Electron-Mobility Transistors.

Published in:

Electrica, 2024, v. 24, n. 1, p. 12, doi. 10.5152/electrica.2023.22162

By:

Dayioglu, Tevhide;
Gulbahce, Mehmet Onur;
Lordoglu, Abdulsamed;
Kocabas, Derya Ahmet

Publication type:

Article

Enhancement of Multisubband Electron Mobility in Barrier Delta-Doped Asymmetric GaAs/AlGaAs Double Quantum Well Structure.

Published in:

IETE Technical Review, 2016, v. 33, n. 1, p. 17, doi. 10.1080/02564602.2015.1043150

By:

Das, Sudhakar;
Nayak, Rasmita Kumari;
Sahu, Trinath;
Panda, Ajit Kumar

Publication type:

Article

A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability.

Published in:

Electronics (2079-9292), 2018, v. 7, n. 12, p. 377, doi. 10.3390/electronics7120377

By:

Zeng, Fanming;
An, Judy Xilin;
Zhou, Guangnan;
Li, Wenmao;
Wang, Hui;
Duan, Tianli;
Jiang, Lingli;
Yu, Hongyu

Publication type:

Article

Optical and electron beam studies of gamma-irradiated AlGaN/GaN high-electron-mobility transistors.

Published in:

Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, 2016, v. 171, n. 3/4, p. 223, doi. 10.1080/10420150.2016.1170018

By:

Yadav, Anupama;
Glasscock, Cameron;
Flitsiyan, Elena;
Chernyak, Leonid;
Lubomirsky, Igor;
Khodorov, Sergey;
Salzman, Joseph;
Meyler, Boris;
Coppola, Carlo;
Guay, Sebestian;
Boivin, Jasques

Publication type:

Article

Importance of High‐Electron Mobility in Polymer Acceptors for Efficient All‐Polymer Solar Cells: Combined Engineering of Backbone Building Unit and Regioregularity.

Published in:

Advanced Functional Materials, 2022, v. 32, n. 5, p. 1, doi. 10.1002/adfm.202108508

By:

Seo, Soodeok;
Sun, Cheng;
Lee, Jin‐Woo;
Lee, Seungjin;
Lee, Dongchan;
Wang, Cheng;
Phan, Tan Ngoc‐Lan;
Kim, Geon‐U;
Cho, Shinuk;
Kim, Yun‐Hi;
Kim, Bumjoon J.

Publication type:

Article

GENERIC ELECTRON MOBILITY IN SURFACE STATES ON HELIUM FILMS.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2007, v. 21, n. 13/14, p. 2103, doi. 10.1142/S0217979207043506

By:

KROTSCHECK, E.;
MILLER, M. D.

Publication type:

Article