Works matching DE "FIELD-effect transistors"

Results: 4448

Electrodes for pH Sensing Based on Stainless Steel: Mechanism, Surface Modification, Potentiometric Performance, and Prospects.

Published in:

Chemosensors, 2025, v. 14, n. 5, p. 160, doi. 10.3390/chemosensors13050160

By:

Vilasó-Cadre, Javier E.;
Hidalgo, Juan;
Arada-Pérez, María A.;
Reyes-Domínguez, Iván A.;
Turdean, Graziella L.;
Cruz, Roel;
Piña Leyte-Vidal, Juan J.;
González-Fernández, Lázaro A.;
Sánchez-Polo, Manuel;
Hidalgo, Luis

Publication type:

Article

Field-Effect Transistor Based on Nanocrystalline Graphite for DNA Immobilization.

Published in:

Biomolecules (2218-273X), 2025, v. 15, n. 5, p. 619, doi. 10.3390/biom15050619

By:

Adiaconita, Bianca;
Chiriac, Eugen;
Burinaru, Tiberiu;
Marculescu, Catalin;
Pachiu, Cristina;
Brincoveanu, Oana;
Simionescu, Octavian;
Avram, Marioara

Publication type:

Article

Recent Advances in Paper-Based Electronics: Emphasis on Field-Effect Transistors and Sensors.

Published in:

Biosensors (2079-6374), 2025, v. 15, n. 5, p. 324, doi. 10.3390/bios15050324

By:

Barmpakos, Dimitris;
Apostolakis, Apostolos;
Jaber, Fadi;
Aidinis, Konstantinos;
Kaltsas, Grigoris

Publication type:

Article

Carbon Nanotube-Based Field-Effect Transistor Biosensors for Biomedical Applications: Decadal Developments and Advancements (2016–2025).

Published in:

Biosensors (2079-6374), 2025, v. 15, n. 5, p. 296, doi. 10.3390/bios15050296

By:

Sengupta, Joydip;
Hussain, Chaudhery Mustansar

Publication type:

Article

Aptamer-Based Planar Electric Double-Layer Field-Effect Transistor: A Novel Approach for Sensitive Troponin I Sensing.

Published in:

Biosensors (2079-6374), 2025, v. 15, n. 5, p. 285, doi. 10.3390/bios15050285

By:

Hung, Sheng-Chun;
Lee, Yi-Hua

Publication type:

Article

DNA Sensors for the Detection of Mercury Ions.

Published in:

Biosensors (2079-6374), 2025, v. 15, n. 5, p. 275, doi. 10.3390/bios15050275

By:

Li, Feng;
Lin, Jinxin;
Lichtfouse, Eric;
Qi, Haifeng;
Peng, Lang;
Yu, Yangyang;
Gao, Li

Publication type:

Article

Unraveling Charge Transfer Mechanisms in Graphene–Quantum Dot Hybrids for High-Sensitivity Biosensing.

Published in:

Biosensors (2079-6374), 2025, v. 15, n. 5, p. 269, doi. 10.3390/bios15050269

By:

Francis, Shinto Mundackal;
Sanabria, Hugo;
Podila, Ramakrishna

Publication type:

Article

AN INTEGRATED Δ∑ A/D ARCHITECTURE FOR SMART ISFET.

Published in:

Revista Cubana de Física, 2021, v. 38, n. 1, p. 32

By:

GARNIER-FERNÁNDEZ, D.;
SERRA-GRAELLS, F.;
JIMÉNEZ-JORQUERA, C.;
BALDI-COLL, A.;
DE FUENTES, O. ARIAS

Publication type:

Article

HEMT structures.

Published in:

Solid State Technology, 2000, v. 43, n. 12, p. 130

By:

Kelley, B.J.;
Dodrill, B.C.;
Lindemuth, J.R.;
Du, G.;
Meyer, J.R.

Publication type:

Article

Gd oxide may bring better GaAs, more talk.

Published in:

Solid State Technology, 1999, v. 42, n. 6, p. 28

By:

Burggraaf, Pieter

Publication type:

Article

A Novel Asymmetric Trench SiC MOSFET with L-shaped Split Gate for Low Power Consumption and Fast Recovery.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4786, doi. 10.1007/s11664-025-11892-w

By:

Chen, Weizhong;
Deng, Zhijie;
Chen, Zesheng;
Zhou, Yangqi;
Han, Zhengsheng;
Wang, Zeheng

Publication type:

Article

Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance: D. Chowdhury et al

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 5, p. 3480, doi. 10.1007/s11664-024-11548-1

By:

Chowdhury, Dibyendu;
DasMahapatra, Suddhendu;
De, Bishnu Prasad;
Maiti, Madhusudan;
Kar, Rajib;
Mandal, Durbadal;
Samanta, Jagannath

Publication type:

Article

Core–Shell Incorporated Analytical Modeling of a Dual-Material Gate Junctionless Nanowire: Extraction of Subthreshold Characteristics: Core–Shell-Incorporated Analytical Modeling of a Dual-Material Gate Junctionless Nanowire...: Bharti, P. Mittal

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 4, p. 3046, doi. 10.1007/s11664-025-11737-6

By:

Bharti;
Mittal, Poornima

Publication type:

Article

Optimization of Sensor Morphology and Sensing Performance in a Non-enzymatic Graphene FET Biosensor for Detection of Biomolecules in Complex Analytes.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 1, p. 285, doi. 10.1007/s11664-024-11531-w

By:

Senthil Kumaran, V. N.;
Venkatesh, M.;
Alqahtani, Abdulrahman Saad;
Mubarakali, Azath;
Parthasarathy, P.

Publication type:

Article

The Relaxation of Oxygen Vacancies Induced Hysteresis Behavior of Ferroelectric Negative Capacitance Field-Effect Transistors.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 11, p. 7057, doi. 10.1007/s11664-024-11396-z

By:

Liu, Bingtao;
Huan, Changmeng;
Cai, Yongqing;
Ke, Qingqing

Publication type:

Article

Investigating Viability of Split-Stepped Gate Field Plate Design on Ga2O3 MOSFET for High Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 8, p. 4544, doi. 10.1007/s11664-024-11225-3

By:

Goyal, Priyanshi;
Kaur, Harsupreet

Publication type:

Article

Design and Optimization of a Heterojunction (Ge/Si) Vertical-Tunnel Field Effect Transistor (HV-TFET) with a Doped Bar for Low-Power Applications.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3933, doi. 10.1007/s11664-024-11130-9

By:

Kumawat, Pradeep Kumar;
Birla, Shilpi;
Singh, Neha

Publication type:

Article

Performance Evaluation of Nano-scale Core–Shell Junctionless FETs in the Designing of Ultralow-Power Inverter and Ring Oscillator.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 3100, doi. 10.1007/s11664-024-11088-8

By:

Seifollahi, Samaneh;
Ziabari, Seyed Ali Sedigh;
kiani-Sarkaleh, Azadeh

Publication type:

Article

Investigation of Double RESURF P-GaN Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Partial N-GaN Channels.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2562, doi. 10.1007/s11664-024-10987-0

By:

Li, Huan;
Bai, Zhiyuan;
Yang, Lian

Publication type:

Article

Hexakis‐TIPS‐Alkynylated Nonacenes: Persistent and Processible.

Published in:

Chemistry - A European Journal, 2023, v. 29, n. 61, p. 1, doi. 10.1002/chem.202302323

By:

Zeitter, Nico;
Hippchen, Nikolai;
Weidlich, Anna;
Jäger, Patrick;
Ludwig, Philipp;
Rominger, Frank;
Dreuw, Andreas;
Freudenberg, Jan;
Bunz, Uwe H. F.

Publication type:

Article

Light‐Responsive Oligothiophenes Incorporating Photochromic Torsional Switches.

Published in:

Chemistry - A European Journal, 2022, v. 28, n. 65, p. 1, doi. 10.1002/chem.202202698

By:

Jozeliūnaitė, Augustina;
Rahmanudin, Aiman;
Gražulis, Saulius;
Baudat, Emilie;
Sivula, Kevin;
Fazzi, Daniele;
Orentas, Edvinas;
Sforazzini, Giuseppe

Publication type:

Article

Butterfly‐Like Triarylamines with High Hole Mobility and On/Off Ratio in Bottom‐Gated OFETs.

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 62, p. 15375, doi. 10.1002/chem.202102568

By:

Devibala, Panneerselvam;
Balambiga, Balu;
Mohamed Imran, Predhanekar;
Bhuvanesh, Nattamai S. P.;
Nagarajan, Samuthira

Publication type:

Article

N‐Type Quinoidal Polymers Based on Dipyrrolopyrazinedione for Application in All‐Polymer Solar Cells.

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 54, p. 13527, doi. 10.1002/chem.202102084

By:

Pan, Langheng;
Zhan, Tao;
Oh, Jiyeon;
Zhang, Yue;
Tang, Haoran;
Yang, Mingqun;
Li, Mengmeng;
Yang, Changduk;
Liu, Xi;
Cai, Ping;
Duan, Chunhui;
Huang, Fei;
Cao, Yong

Publication type:

Article

Multifunctional Features of Organic Charge‐Transfer Complexes: Advances and Perspectives.

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 2, p. 464, doi. 10.1002/chem.202002640

By:

Wang, Wei;
Luo, Lixing;
Sheng, Peng;
Zhang, Jing;
Zhang, Qichun

Publication type:

Article

Exciton Transport in Molecular Semiconductor Crystals for Spin‐Optoelectronics Paradigm.

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 1, p. 222, doi. 10.1002/chem.202003447

By:

Zhu, Weigang;
Sun, Yajing;
Liu, Jie;
Bai, Shuming;
Zhang, Zhicheng;
Shi, Qiang;
Hu, Wenping;
Fu, Hongbing

Publication type:

Article

Cover Feature: Optically Triggered Control of the Charge Carrier Density in Chemically Functionalized Graphene Field Effect Transistors (Chem. Eur. J. 29/2020).

Published in:

Chemistry - A European Journal, 2020, v. 26, n. 29, p. 6289, doi. 10.1002/chem.202001491

By:

Tang, Zian;
George, Antony;
Winter, Andreas;
Kaiser, David;
Neumann, Christof;
Weimann, Thomas;
Turchanin, Andrey

Publication type:

Article

Optically Triggered Control of the Charge Carrier Density in Chemically Functionalized Graphene Field Effect Transistors.

Published in:

Chemistry - A European Journal, 2020, v. 26, n. 29, p. 6473, doi. 10.1002/chem.202000431

By:

Tang, Zian;
George, Antony;
Winter, Andreas;
Kaiser, David;
Neumann, Christof;
Weimann, Thomas;
Turchanin, Andrey

Publication type:

Article

Symmetric Mixed Sulfur–Selenium Fused Ring Systems as Potential Materials for Organic Field‐Effect Transistors.

Published in:

Chemistry - A European Journal, 2020, v. 26, n. 13, p. 2869, doi. 10.1002/chem.201903958

By:

Holzer, Brigitte;
Dellago, Barbara;
Thamm, Ann‐Katrin;
Mathis, Thomas;
Stöger, Berthold;
Horkel, Ernst;
Hametner, Christian;
Batlogg, Bertram;
Fröhlich, Johannes;
Lumpi, Daniel

Publication type:

Article

Hybrid Bilayer WSe2-CH3NH3PbI3 Organolead Halide Perovskite as a High-Performance Photodetector.

Published in:

Angewandte Chemie, 2016, v. 128, n. 39, p. 12124, doi. 10.1002/ange.201603557

By:

Lu, Junpeng;
Carvalho, Alexandra;
Liu, Hongwei;
Lim, Sharon Xiaodai;
Castro Neto, Antonio H.;
Sow, Chorng Haur

Publication type:

Article

Electronic Olfactory Sensor Based on A. mellifera Odorant-Binding Protein 14 on a Reduced Graphene Oxide Field-Effect Transistor.

Published in:

Angewandte Chemie, 2015, v. 127, n. 45, p. 13443, doi. 10.1002/ange.201505712

By:

Larisika, Melanie;
Kotlowski, Caroline;
Steininger, Christoph;
Mastrogiacomo, Rosa;
Pelosi, Paolo;
Schütz, Stefan;
Peteu, Serban F.;
Kleber, Christoph;
Reiner‐Rozman, Ciril;
Nowak, Christoph;
Knoll, Wolfgang

Publication type:

Article

Direct Solvothermal Synthesis of B/N-Doped Graphene.

Published in:

Angewandte Chemie, 2014, v. 126, n. 9, p. 2430, doi. 10.1002/ange.201310260

By:

Jung, Sun ‐ Min;
Lee, Eun Kwang;
Choi, Min;
Shin, Dongbin;
Jeon, In ‐ Yup;
Seo, Jeong ‐ Min;
Jeong, Hu Young;
Park, Noejung;
Oh, Joon Hak;
Baek, Jong ‐ Beom

Publication type:

Article

Crystal Engineering of Dual Channel p/n Organic Semiconductors by Complementary Hydrogen Bonding.

Published in:

Angewandte Chemie, 2014, v. 126, n. 8, p. 2170, doi. 10.1002/ange.201310902

By:

Black, Hayden T.;
Perepichka, Dmitrii F.

Publication type:

Article

Crystal Engineering of Dual Channel p/n Organic Semiconductors by Complementary Hydrogen Bonding.

Published in:

Angewandte Chemie, 2014, v. 126, n. 8, p. 2170, doi. 10.1002/ange.201310902

By:

Black, Hayden T.;
Perepichka, Dmitrii F.

Publication type:

Article

Enhancement of the Photoresponse in Organic Field-Effect Transistors by Incorporating Thin DNA Layers.

Published in:

Angewandte Chemie, 2014, v. 126, n. 1, p. 248, doi. 10.1002/ange.201306763

By:

Zhang, Yuan;
Wang, Mingfeng;
Collins, Samuel D.;
Zhou, Huiqiong;
Phan, Hung;
Proctor, Christopher;
Mikhailovsky, Alexander;
Wudl, Fred;
Nguyen, Thuc ‐ Quyen

Publication type:

Article

Solution-processable (Pc′)Eu(Pc′)Eu[TP(OH)PP]/rGO bilayer heterojunction organic transistors with exceptional excellent ambipolar performance.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 13, p. 12437, doi. 10.1007/s10854-019-01603-7

By:

Kong, Xia;
Lu, Guang;
Wang, Xiangyang;
Zhao, Shuai;
Sun, Daofeng;
Li, Xiyou;
Chen, Yanli;
Jiang, Jianzhuang

Publication type:

Article

A stress sensor based on a silicon field effect transistor comprising a piezoelectric AlN gate dielectric.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 12, p. 11493, doi. 10.1007/s10854-019-01502-x

By:

Winterfeld, H.;
Birkoben, T.;
Niethe, N.;
Preinl, N.;
Kohlstedt, H.;
Thormählen, L.;
Lewitz, H.;
Yarar, E.;
Quandt, E.;
Hanssen, H.

Publication type:

Article

Facile synthesis of flexible Pt/NiO 1D nanohybrids with high electrical properties using electrospinning.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 11, p. 10589, doi. 10.1007/s10854-019-01403-z

By:

Zhang, Mengfei;
Xing, Yan;
Zhou, Huajian;
Li, Tianjun;
Cheng, Jing;
Zhao, Xiaohui;
Nishijima, Hiroki;
Pan, Wei

Publication type:

Article

Fabrication, characterization and electrochemical simulation of AlN-gate ISFET pH sensor.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 7, p. 7163, doi. 10.1007/s10854-019-01033-5

By:

Sinha, Soumendu;
Mukhiya, Ravindra;
Sharma, Rishi;
Khanna, P. K.;
Khanna, V. K.

Publication type:

Article

Minimizing the TID effects due to gamma rays by using diamond layout for MOSFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 5, p. 4339, doi. 10.1007/s10854-019-00747-w

By:

Seixas, Luís Eduardo;
Gonçalez, Odair Lellis;
Vaz, Rafael Galhardo;
da Costa Telles, Antonio Carlos;
Finco, Saulo;
Gimenez, Salvador Pinillos

Publication type:

Article

Ambipolar transport in tin dioxide thin film transistors promoted by PCBM fullerene.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 23, p. 20010, doi. 10.1007/s10854-018-0131-9

By:

Boratto, Miguel H.;
Scalvi, Luis V. A.;
Goncharova, Lyudmila V.;
Fanchini, Giovanni

Publication type:

Article

Modeling linearity and ambipolarity in GFETs on different dielectrics for communication applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 4, p. 2883, doi. 10.1007/s10854-017-8218-2

By:

Sharma, Preetika;
Singh, Sukhbir;
Gupta, Shuchi;
Kaur, Inderpreet

Publication type:

Article

Liquid-processed transition metal dichalcogenide films for field-effect transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 23, p. 18106, doi. 10.1007/s10854-017-7755-z

By:

Omelianovych, A.;
Dominskiy, D.;
Feldman, E.;
Bessonov, A.;
Stevenson, K.;
Paraschuk, D.

Publication type:

Article

Improving the operational voltage of vertical organic field effect transistor (VOFET) by altering the morphology of dielectric layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 16, p. 11961, doi. 10.1007/s10854-017-7005-4

By:

Mohd Halizan, Muhammad;
Roslan, Nur;
Abdullah, Shahino;
Abdul Halim, Nurain;
Velayutham, Thamil;
Woon, Kai;
Supangat, Azzuliani

Publication type:

Article

Laterally grown show better performance: ZnO nanorods network based field effect transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 15, p. 11202, doi. 10.1007/s10854-017-6908-4

By:

Kumar, Ashish;
Dixit, Tejendra;
Bhargava, Kshitij;
Palani, I.;
Singh, Vipul

Publication type:

Article

High sensitivity extended gate effect transistor based on VO nanorods.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1364, doi. 10.1007/s10854-016-5669-9

By:

Abd-Alghafour, N.;
Ahmed, Naser;
Hassan, Z.;
Almessiere, Munirah;
Bououdina, M.;
Al-Hardan, Naif

Publication type:

Article

Analysis of electrostatic doped Schottky barrier carbon nanotube FET for low power applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1762, doi. 10.1007/s10854-016-5723-7

By:

Singh, Amandeep;
Khosla, Mamta;
Raj, Balwinder

Publication type:

Article

High performance single crystalline PbWO nanorod field effect transistor.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 10044, doi. 10.1007/s10854-015-3685-9

By:

Walke, Pravin;
Patil, Vandana;
Mulla, I.;
Late, Dattatray

Publication type:

Article

Ultrafine Pt nanoparticle induced doping/strain of single layer graphene: experimental corroboration between conduction and Raman characteristics.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4746, doi. 10.1007/s10854-015-3043-y

By:

Zheng, Haisheng;
Mukherjee, Somik;
Gangopadhyay, Keshab;
Gangopadhyay, Shubhra

Publication type:

Article

Selective epitaxy growth of SiGe layers for MOSFETs and FinFETs.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 7, p. 4584, doi. 10.1007/s10854-015-3123-z

By:

Radamson, Henry;
Kolahdouz, Mohammadreza

Publication type:

Article

High crystallinity oligo(3-methylthiophenes) for p-channel organic field-effect transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 9, p. 3727, doi. 10.1007/s10854-014-2082-0

By:

Zhou, Bing;
Huang, Pengcheng;
Liu, Chuanlin

Publication type:

Article