Title: Cover Feature: Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination. (Chem. Eur. J. 38/2021).
Authors: Büschges, M. Isabelle; Hoffmann, Rudolf C.; Regoutz, Anna; Schlueter, Christoph; Schneider, Jörg J.
Abstract: Cover Feature: Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination. Keywords: aluminum oxide; atomic layer deposition; heterostructure; indium oxide; thin-film transistor; tin oxide EN aluminum oxide atomic layer deposition heterostructure indium oxide thin-film transistor tin oxide 9719 9719 1 07/10/21 20210707 NES 210707 B Lesser is better b : Multilayered heterostructures comprising of In SB 2 sb O SB 3 sb , SnO SB 2 sb , and one or two atomic layers of Al SB 2 sb O SB 3 sb were studied for their application in thin-film transistors (TFT). Aluminum oxide, atomic layer deposition, heterostructure, indium oxide, thin-film transistor, tin oxide.
Subjects: INDIUM gallium zinc oxide; ATOMIC layer deposition; ALUMINUM oxide films; THIN film transistors; TRANSISTORS; INDIUM; TIN
Publication: Chemistry - A European Journal, 2021, Vol 27, Issue 38, p9719
ISSN: 0947-6539
Publication type: Academic Journal
DOI: 10.1002/chem.202102030

Cover Feature: Atomic Layer Deposition of Ternary Indium/Tin/Aluminum Oxide Thin Films, Their Characterization and Transistor Performance under Illumination. (Chem. Eur. J. 38/2021).

Büschges, M. Isabelle; Hoffmann, Rudolf C.; Regoutz, Anna; Schlueter, Christoph; Schneider, Jörg J.