Thermoelectric Response in Nodal‐Point Semimetals.

Mandal, Ipsita; Saha, Kush

In this review, the thermoelectric properties in nodal‐point semimetals with two bands are discussed. For the two‐dimensional (2D) cases, it is shown that the expressions of the thermoelectric coefficients take different values depending on the nature of the scattering mechanism responsible for transport, by considering examples of short‐ranged disorder potential and screened charged impurities. An anisotropy in the energy dispersion spectrum invariably affects the thermopower quite significantly, as illustrated by the results for a node of semi‐Dirac semimetal and a single valley of graphene. The scenario when a magnetic field of magnitude B$B$ is applied perpendicular to the plane of the 2D semimetal is also considered. The computations for the three‐dimensional (3D) cases necessarily involve the inclusion of nontrivial Berry phase effects. In addition to demonstrating the expressions for the response tensors, the exotic behavior observed in planar Hall and planar thermal Hall set‐ups is discussed.

THERMOELECTRIC materials; BOLTZMANN'S equation; LINEAR equations; MAGNETIC fields; THERMOELECTRIC power; SEMIMETALS

Annalen der Physik, 2024, Vol 536, Issue 9, p1

0003-3804

Academic Journal

10.1002/andp.202400016