Title: Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source (Adv. Electron. Mater. 4/2024).
Authors: Meng, Dequan; Chen, Shiwei; Ren, Chuantong; Li, Jiaxu; Lan, Guibin; Li, Chaozhong; Liu, Yong; Su, Yurong; Yu, Guoqiang; Chai, Guozhi; Xiong, Rui; Zhao, Weisheng; Yang, Guang; Liang, Shiheng
Abstract: The article titled "Field-Free Spin-Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source" discusses the efficiency of spin-orbit torque in SOT-MRAM design. The use of the non-collinear antiferromagnetic properties of Mn3Sn as a spin source is a significant development in reducing power consumption for memory chips. The unique features of Mn3Sn, including its non-collinear antiferromagnetism and Kagome spin structure, have the potential to revolutionize non-volatile memory by providing a more energy-efficient and high-performance storage solution. The article provides further details on this topic.
Publication: Advanced Electronic Materials, 2024, Vol 10, Issue 4, p1
ISSN: 2199-160X
Publication type: Academic Journal
DOI: 10.1002/aelm.202470017

Field‐Free Spin‐Orbit Torque Driven Perpendicular Magnetization Switching of Ferrimagnetic Layer Based on Noncollinear Antiferromagnetic Spin Source (Adv. Electron. Mater. 4/2024).

Meng, Dequan; Chen, Shiwei; Ren, Chuantong; Li, Jiaxu; Lan, Guibin; Li, Chaozhong; Liu, Yong; Su, Yurong; Yu, Guoqiang; Chai, Guozhi; Xiong, Rui; Zhao, Weisheng; Yang, Guang; Liang, Shiheng