Title: Analog HfxZr1‐xO2 Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network (Adv. Electron. Mater. 4/2024).
Authors: Zhu, Quanzhou; Jiang, Biyi; Lan, Jun; Hou, Zeyu; Dong, Yida; Wang, Zhongrui; Feng, Xuewei; Shen, Mei; Yu, Hongyu; Chen, Kai; Li, Jiamin; Lin, Longyang; Zhou, Feichi; Li, Yida
Abstract: The article titled "Analog Hf_xZr_1-xO_2 Memristors with Tunable Linearity for Implementation in a Self-Organizing Map Neural Network" discusses the development of analog memristors based on amorphous Zr-doped HfO2. These memristors demonstrate improved switching performance and tunable linearity of analog states. The researchers were able to achieve high accuracy in Fashion MNIST database classification using a self-organizing map network. This research has the potential to contribute to the development of CMOS-compatible memristors for future storage and computing applications.
Publication: Advanced Electronic Materials, 2024, Vol 10, Issue 4, p1
ISSN: 2199-160X
Publication type: Academic Journal
DOI: 10.1002/aelm.202300508

Analog Hf<sub>x</sub>Zr<sub>1‐x</sub>O<sub>2</sub> Memristors with Tunable Linearity for Implementation in a Self‐Organizing Map Neural Network (Adv. Electron. Mater. 4/2024).

Zhu, Quanzhou; Jiang, Biyi; Lan, Jun; Hou, Zeyu; Dong, Yida; Wang, Zhongrui; Feng, Xuewei; Shen, Mei; Yu, Hongyu; Chen, Kai; Li, Jiamin; Lin, Longyang; Zhou, Feichi; Li, Yida