Highly Stretchable MoS₂‐Based Transistors with Opto‐Synaptic Functionalities (Adv. Electron. Mater. 9/2022).

Li, Jiawei; Li, Na; Wang, Qinqin; Wei, Zheng; He, Congli; Shang, Dashan; Guo, Yutuo; Zhang, Woyu; Tang, Jian; Liu, Jieying; Wang, Shuopei; Yang, Wei; Yang, Rong; Shi, Dongxia; Zhang, Guangyu

These devices exhibit excellent electrical properties under a large uniaxial/biaxial stretching or oft-repeated tensile force, and such stretchable devices could be well applied to mimic synapses for neuromorphic computation. Highly Stretchable MoS2-Based Transistors with Opto-Synaptic Functionalities (Adv. B Stretchable Opto-Synaptic Transistors b In article number 2200238, Na Li, Guangyu Zhang, and co-workers demonstrate highly stretchable monolayer MoS SB 2 sb field effect transistors with buckled structures.

TRANSISTORS; FIELD-effect transistors; ELECTRONS

Advanced Electronic Materials, 2022, Vol 8, Issue 9, p1

2199-160X

Academic Journal

10.1002/aelm.202270047