Works matching Transistor Technologies

Results: 810

2D Dielectrophoresis using an active matrix array made by thin‐film‐transistor technology.

Published in:

IEEJ Transactions on Electrical & Electronic Engineering, 2019, v. 14, n. 9, p. 1280, doi. 10.1002/tee.22979

By:

Tixier‐Mita, Agnès;
Ihida, Satoshi;
Blanchard, Damien;
Shinohara, Marie;
Eiler, Anne‐Claire;
Cathcart, Grant Alexander;
Faure, Pierre‐Marie;
Kohno, Takashi;
Sakai, Yasuyuki;
Lévi, Timothée;
Toshiyoshi, Hiroshi

Publication type:

Article

Study of the UTBB BESOI Tunnel-FET Working as a Dual-Technology Transistor.

Published in:

Journal of Integrated Circuits & Systems, 2021, v. 16, n. 2, p. 1, doi. 10.29292/jics.v16i2.208

By:

Mori, Carlos A. B.;
Agopian, Paula G. D.;
Martino, João A.

Publication type:

Article

Design of energy‐efficient ternary circuits using differential cascode voltage switch strategies in carbon nanotube field effect transistor technology.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2020, v. 14, n. 7, p. 1077, doi. 10.1049/iet-cds.2019.0375

By:

Sharma, Trapti;
Kumre, Laxmi

Publication type:

Article

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors.

Published in:

Sensors (14248220), 2019, v. 19, n. 11, p. 2454, doi. 10.3390/s19112454

By:

Božanić, Mladen;
Sinha, Saurabh

Publication type:

Article

Technology and Modeling of Nonclassical Transistor Devices.

Published in:

Journal of Electrical & Computer Engineering, 2019, p. 1, doi. 10.1155/2019/4792461

By:

Angelov, George V.;
Nikolov, Dimitar N.;
Hristov, Marin H.

Publication type:

Article

An Analogue Multiplier Using Carbon Nanotube Field-effect Transistor Technology.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04022

By:

Hatefinasab, Seyedehsomayeh

Publication type:

Article

ANALYSIS OF THE USE OF TRANSISTORS BASED ON SiC TECHNOLOGY IN INVERTERS IN THE CONTEXT OF ELECTROMAGNETIC COMPATIBILITY.

Published in:

Technical Transactions / Czasopismo Techniczne, 2016, v. 1-M, n. 2, p. 33, doi. 10.4467/2353737XCT.16.027.5289

By:

CZUCHRA, WOJCIECH;
MYSIŃSKI, WOJCIECH;
WOSZCZYNA, BARTOSZ

Publication type:

Article

An Asynchronous Design for Testability and Implementation in Thin-film Transistor Technology.

Published in:

Journal of Electronic Testing, 2011, v. 27, n. 2, p. 193, doi. 10.1007/s10836-011-5195-x

By:

Cheng, Chi-Hsuan;
Li, James

Publication type:

Article

A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-01917-9

By:

Liu, Yang;
Lv, Yuanjie;
Guo, Shuoshuo;
Luan, Zhengfang;
Cheng, Aijie;
Lin, Zhaojun;
Yang, Yongxiong;
Jiang, Guangyuan;
Zhou, Yan

Publication type:

Article

High-power microwave LDMOS transistors for wireless data transmission technologies (Review).

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1669, doi. 10.1134/S1063782610130105

By:

Kuznetsov, E.;
Shemyakin, A.

Publication type:

Article

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 18, p. 1, doi. 10.1002/pssa.202100290

By:

Alim, Mohammad A.;
Naima, Jannatul;
Rezazadeh, Ali A.

Publication type:

Article

Thin Film Transistors Gas Sensors: Materials, Manufacturing Technologies and Test Results.

Published in:

Electronics & Electrical Engineering, 2009, n. 89, p. 39

By:

Pereira, M. C.;
Martins, M. J.;
Bonnaud, O.

Publication type:

Article

260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 194, doi. 10.1049/el.2016.3882

By:

Yoon, D.;
Seo, M.-G.;
Song, K.;
Kaynak, M.;
Tillack, B.;
Rieh, J.-S.

Publication type:

Article

260‐GHz differential amplifier in SiGe heterojunction bipolar transistor technology.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 194, doi. 10.1049/el.2016.3882

By:

Yoon, D.;
Seo, M.‐G.;
Song, K.;
Kaynak, M.;
Tillack, B.;
Rieh, J.‐S.

Publication type:

Article

基于低温多晶硅-氧化物半导体混合集成的薄膜晶体管显示背板技术.

Published in:

Chinese Journal of Liquid Crystal & Displays, 2021, v. 36, n. 2, p. 1, doi. 10.37188/CJLCD.2020-0268

By:

邓立昂;
陈世林;
黄博天;
郭小军

Publication type:

Article

An energy‐efficient dynamic comparator in Carbon Nanotube Field Effect Transistor technology for successive approximation register ADC applications.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2022, v. 16, n. 4, p. 360, doi. 10.1049/cds2.12112

By:

Mahmoodian, Hamid;
Dolatshahi, Mehdi;
Zanjani, S. Mohammadali;
Honarvar, Mohammad Amin

Publication type:

Article

Organic Electrochemical Transistors: An Emerging Technology for Biosensing.

Published in:

Advanced Materials Interfaces, 2022, v. 9, n. 6, p. 1, doi. 10.1002/admi.202102039

By:

Marks, Adam;
Griggs, Sophie;
Gasparini, Nicola;
Moser, Maximilian

Publication type:

Article

Rapid and Highly Sensitive Detection of Leishmania by Combining Recombinase Polymerase Amplification and Solution-Processed Oxide Thin-Film Transistor Technology.

Published in:

Biosensors (2079-6374), 2023, v. 13, n. 8, p. 765, doi. 10.3390/bios13080765

By:

Wu, Weidong;
Biyani, Manish;
Hirose, Daisuke;
Takamura, Yuzuru

Publication type:

Article

A new factor for fabrication technologies evaluation for silicon nanowire transistors.

Published in:

Telkomnika, 2020, v. 18, n. 5, p. 2597, doi. 10.12928/TELKOMNIKA.v18i5.12121

By:

Hashim, Yasir;
Nazmus Shakib, Mohammed

Publication type:

Article

Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201259

By:

Fuchsberger, Andreas;
Wind, Lukas;
Sistani, Masiar;
Behrle, Raphael;
Nazzari, Daniele;
Aberl, Johannes;
Prado Navarrete, Enrique;
Vukŭsić, Lada;
Brehm, Moritz;
Schweizer, Peter;
Vogl, Lilian;
Maeder, Xavier;
Weber, Walter M.

Publication type:

Article

Design of unbalanced 9:2 ternary encoder and 2:9 ternary decoder circuits in resistive random access memory and carbon nanotube field effect transistor technology.

Published in:

International Journal of Circuit Theory & Applications, 2024, v. 52, n. 10, p. 5403, doi. 10.1002/cta.4022

By:

Khurshid, Tabassum;
Singh, Vikram

Publication type:

Article

Evaluation of safety and efficacy of insulated-gate bipolar transistor holmium laser technology for prostate enucleation in canine model: a preliminary study.

Published in:

Lasers in Medical Science, 2024, v. 39, n. 1, p. 1, doi. 10.1007/s10103-024-04155-3

By:

Sun, Jie;
Sherryn, Sherryn;
Tong, Zhen;
Xia, Shengqiang;
Chen, Bin

Publication type:

Article

BSIM3v3 Characterization and Simulation of MOS Si1-xGex Transistors with 130 nm Submicron Technology.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 4, p. 1, doi. 10.21272/jnep.11(4).04021

By:

Hebali, M.;
Bennaoum, M.;
Benzohra, M.;
Chalabi, D.;
Saïdane, A.

Publication type:

Article

COMPARISON OF TWO GAN TRANSISTOR TECHNOLOGIES IN BROADBAND POWER AMPLIFIERS.

Published in:

Microwave Journal, 2010, v. 53, n. 4, p. 184

By:

Azam, S.;
Svenson, C.;
Wahab, Q.;
Jonsson, R.

Publication type:

Article

One‐Transistor Memory: One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications (Adv. Electron. Mater. 8/2019).

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201970043

By:

Dai, Mingzhi;
Yang, Wenwei;
Li, Ming;
Zhang, Lei;
Huo, Changhe;
Dong, Yemin;
Webster, Thomas J.

Publication type:

Article

One‐Transistor Memory Compatible with Si‐Based Technology with Multilevel Applications.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900262

By:

Dai, Mingzhi;
Yang, Wenwei;
Li, Ming;
Zhang, Lei;
Huo, Changhe;
Dong, Yemin;
Webster, Thomas J.

Publication type:

Article

P‐32: Dual Gate Amorphous Silicon Thin Film Transistor Technology for High Brightness and High Frame Rate Outdoor Display Panels.

Published in:

SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 1475, doi. 10.1002/sdtp.17831

By:

Zhou, Zhichao;
Zhu, Yiyi;
Zhou, Xiaoliang;
Qiao, Lei;
Liu, Zhongjie;
Tan, Zhiwei

Publication type:

Article

50‐4: Invited Paper: Low‐Temperature Metal‐Oxide Thin‐Film Transistor Technology and the Realization of Electronic Systems on Flexible Substrates.

Published in:

SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 689, doi. 10.1002/sdtp.17618

By:

Shi, Runxiao;
Hu, Yushen;
Xie, Xinying;
Wong, Man

Publication type:

Article

6‐1: Pragmatic low‐temperature polycrystalline thin‐film transistor technologies for high‐brightness and high‐temperature environments in AMOLED displays.

Published in:

SID Symposium Digest of Technical Papers, 2024, v. 55, n. 1, p. 29, doi. 10.1002/sdtp.17445

By:

Kim, Keunwoo;
Thanh, Tien Nguyen;
Sung, Bummo;
Shin, Jiyeong;
Lee, Dokyeong;
Jang, Keunho;
Lee, Changhee

Publication type:

Article

47‐3: In‐Cell Ambient Light Sensors (ALSs) LCD Integration Using a‐Si TFT photo‐transistor and Four‐Mask Process Architecture Technology.

Published in:

SID Symposium Digest of Technical Papers, 2023, v. 54, n. 1, p. 684, doi. 10.1002/sdtp.16651

By:

Cho, An-Thung;
Dong, Hao;
Wei, Chao;
Yang, Feng-yun;
Li, Wen-xin;
Wang, Ming-liang;
Hsu, James;
Chen, Wade

Publication type:

Article

40‐3: Distinguished Paper: Reliable low‐power high‐performance low‐temperature polycrystalline thin‐film transistor technologies in bottom gate‐controlled device architectures for AMOLED displays.

Published in:

SID Symposium Digest of Technical Papers, 2023, v. 54, n. 1, p. 576, doi. 10.1002/sdtp.16623

By:

Kim, Keunwoo;
Sung, Bummo;
Kim, Doona;
Kim, Sangsub;
Kim, Hanbit;
Shin, Jiyeong;
Kwak, Hyena;
Lee, Dokyeong;
Seol, Chanyoub;
Choi, Sanggun;
Lim, Jun Hyung;
Kang, Taewook;
Lee, Changhee

Publication type:

Article

14.2: Invited Paper: Outlook for Low Cost Printed Active‐Matrix Light‐Emitting Displays Enabled by Vertical Light‐Emitting Transistor Technology.

Published in:

SID Symposium Digest of Technical Papers, 2022, v. 53, p. 149, doi. 10.1002/sdtp.15876

By:

Vasilyeva, Svetlana;
Chen, Xiao;
Rinzler, Andrew;
Lemaitre, Max;
Liu, Bo

Publication type:

Article

15.1: Invited Paper: A Low‐Temperature Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology for Flexible Electronics.

Published in:

SID Symposium Digest of Technical Papers, 2021, v. 52, p. 202, doi. 10.1002/sdtp.15066

By:

Shi, Runxiao;
Lei, Tengteng;
Wang, Sisi;
Xia, Zhihe;
Wong, Man

Publication type:

Article

2.2: High‐Resolution Active‐Matrix Organic Light‐Emitting Diode Display Realized Using Elevated‐Metal Metal‐Oxide Transistor Technology.

Published in:

SID Symposium Digest of Technical Papers, 2021, v. 52, p. 51, doi. 10.1002/sdtp.15017

By:

Chen, Kaiqi;
Zhou, Zhichao;
Xia, Zhihe;
Wong, Man

Publication type:

Article

76‐4: Late-News Paper: Flat Panel Fingerprint/Touch‐input Image Sensor Using a‐Si TFT Photo‐transistor and Four‐Mask Process Architecture Technology.

Published in:

SID Symposium Digest of Technical Papers, 2018, v. 49, n. 1, p. 1024, doi. 10.1002/sdtp.12195

By:

Cho, An-Thung;
Liu, Zhen;
Liu, Kai-jun;
Yang, Feng-yun;
Mo, Qiong-hua;
Hsu, James;
Chen, Wade;
Lu, York

Publication type:

Article

P‐21: Three‐Mask Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology for High‐Resolution AMOLED Application.

Published in:

SID Symposium Digest of Technical Papers, 2018, v. 49, n. 1, p. 1256, doi. 10.1002/sdtp.12139

By:

Li, Jiapeng;
Lu, Lei;
Xia, Zhihe;
Wang, Sisi;
Feng, Zhuoqun;
Kwok, Hoi-Sing;
Wong, Man

Publication type:

Article

8.1: Invited Paper: Enhanced Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology.

Published in:

SID Symposium Digest of Technical Papers, 2018, v. 49, p. 75, doi. 10.1002/sdtp.12644

By:

Lu, Lei;
Li, Jiapeng;
Xia, Zhihe;
Wang, Sisi;
Kwok, Hoi Sing;
Wong, Man

Publication type:

Article

14-2: Towards Commercial Organic Electronics and Comprehensive Comparison of Device Performance and Reliability of Organic and a-Si:H Thin-Film Transistor Technologies.

Published in:

SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 173, doi. 10.1002/sdtp.11614

By:

Liu, Kuan-Hsien;
Chen, Wei-Han;
Tsai, Chia-Hung;
Wu, An-Ju;
Hsu, Shih-Hua;
Tu, Chun-Hao;
Liu, Chu-Yu;
Chiang, Ming-Feng;
Lin, Yu-Chieh

Publication type:

Article

35-4: Invited Paper: Physics Based Design Tools. Key to Organic and Oxide Based Thin Film Transistor (oTFT) Technology Innovation?

Published in:

SID Symposium Digest of Technical Papers, 2017, v. 48, n. 1, p. 505, doi. 10.1002/sdtp.11675

By:

Nejim, Ahmed;
Mijalkovic, Slobodan;
Binder, Thomas;
Kelly, Sean

Publication type:

Article

Analytical Neuro-Space Mapping Technology for Heterojunction Bipolar Transistors Modeling.

Published in:

Progress in Electromagnetics Research M, 2023, v. 120, p. 167, doi. 10.2528/pierm23080706

By:

Shuxia Yan;
Yuxing Li;
Chenglin Li;
Fengqi Qian;
Xu Wang;
Wenyuan Liu

Publication type:

Article

THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy.

Published in:

Opto-Electronics Review, 2018, v. 26, n. 4, p. 261, doi. 10.1016/j.opelre.2018.08.002

By:

Marczewski, J.;
Coquillat, D.;
Knap, W.;
Kolacinski, C.;
Kopyt, P.;
Kucharski, K.;
Lusakowski, J.;
Obrebski, D.;
Tomaszewski, D.;
Yavorskiy, D.;
Zagrajek, P.;
Ryniec, R.;
Palka, N.

Publication type:

Article

ADVANCEMENTS IN CELLULOSE/REDUCED GRAPHENE OXIDE COMPOSITES: SYNTHESIS, CHARACTERIZATION AND APPLICATIONS IN TRANSISTOR TECHNOLOGIES.

Published in:

International Journal of Mechatronics & Applied Mechanics, 2024, n. 16, p. 185

By:

Ramezani, Ghazaleh;
Stiharu, Ion;
van de Ven, Theo G. M.;
Nerguizian, Vahe

Publication type:

Article

130nm Logic Technology Featuring 60nm Transistors, Low-K Dielectrics, and Cu Interconnects.

Published in:

Intel Technology Journal, 2002, v. 6, n. 2, p. 5

By:

Thompson, Scott;
Alavi, Mohsen;
Hussein, Makarem;
Jacob, Pauline;
Kenyon, Chris;
Moon, Peter;
Prince, Matthew;
Sivakumar, Sam;
Tyagi, Sunit;
Bohr, Mark

Publication type:

Article

Distributed Signal and Noise Modeling of Millimeter Wave Transistor Based on CMOS Technology.

Published in:

Applied Computational Electromagnetics Society Journal, 2015, v. 30, n. 8, p. 915

By:

Seifi, Z.;
Abdipour, A.;
Mirzavand, R.

Publication type:

Article

Intraorganizational Alignment and Innovation Processes: Philips and Transistor Technology.

Published in:

Business History Review, 2006, v. 80, n. 4, p. 657, doi. 10.2307/25097265

By:

Davids, Mila;
Verbong, Geert

Publication type:

Article

Transparent In/SeO2 Thin Film Transistors Designed for Gigahertz/Terahertz Technologies.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 10, p. 5617, doi. 10.1007/s11664-022-09834-x

By:

Qasrawi, A. F.;
Daragme, Rana B.

Publication type:

Article

Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Effect Transistor Technology.

Published in:

Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials, 2020, v. 50, n. 4, p. 233, doi. 10.33180/InfMIDEM2020.401

By:

Mamatov, Islombek;
Özçelep, Yasin;
Kaçar, Firat

Publication type:

Article

Multiple Gate Field-Effect Transistors for Future CMOS Technologies.

Published in:

IETE Technical Review, 2010, v. 27, n. 6, p. 446, doi. 10.4103/0256-4602.72582

By:

Subramanian, Vaidyanathan

Publication type:

Article

K/Ka‐Band–GaN–High‐Electron‐Mobility Transistors Technology with 700 mS mm−1 Extrinsic Transconductance.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 3, p. 1, doi. 10.1002/pssa.202400592

By:

Yazdani, Hossein;
Beleniotis, Petros;
Brunner, Frank;
Ostermay, Ina;
Würfl, Joachim;
Rudolph, Matthias;
Heinrich, Wolfgang;
Hilt, Oliver

Publication type:

Article

First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202300953

By:

Li, Hanchao;
Xie, Hanlin;
Wang, Yue;
Yulia, Lekina;
Ranjan, Kumud;
Singh, Navab;
Chung, Surasit;
Lee, Kenneth E.;
Arulkumaran, Subramaniam;
Ing Ng, Geok

Publication type:

Article