Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 6

Results: 38

Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference (Adv. Electron. Mater. 6/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202370030

By:

Li, Ning;
Mackin, Charles;
Chen, An;
Brew, Kevin;
Philip, Timothy;
Simon, Andrew;
Saraf, Iqbal;
Han, Jin‐Ping;
Sarwat, Syed Ghazi;
Burr, Geoffrey W.;
Rasch, Malte;
Sebastian, Abu;
Narayanan, Vijay;
Saulnier, Nicole

Publication type:

Article

Masthead: (Adv. Electron. Mater. 6/2023).

Published in:: Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202370029
Publication type:: Article

Charged Domain Walls in BaTiO3 Crystals Emerging from Superdomain Boundaries (Adv. Electron. Mater. 6/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202370028

By:

Bednyakov, Petr S.;
Hlinka, Jiří

Publication type:

Article

Novel Dielectric Nanogranular Materials with an Electrically Tunable Frequency Response (Adv. Electron. Mater. 6/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202370027

By:

Cao, Yang;
Kobayashi, Nobukiyo;
Wang, Cheng;
Takahashi, Saburo;
Maekawa, Sadamichi;
Masumoto, Hiroshi

Publication type:

Article

Photonic Synapses for Image Recognition and High Density Integration of Simplified Artificial Neural Networks.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300120

By:

Fang, Yuqing;
Li, Qingxuan;
Meng, Jialin;
Wang, Tianyu;
Zhu, Hao;
Sun, Qing‐Qing;
Zhang, David Wei;
Chen, Lin

Publication type:

Article

Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300053

By:

Jeong, Sang Young;
Moon, Jung Woo;
Lee, Soonyong;
Wu, Ziang;
Park, Sung Hyeon;
Cho, Jeong Ho;
Woo, Han Young

Publication type:

Article

Colossal Gilbert Damping Anisotropy in Heusler‐Alloy Thin Films.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300049

By:

Wang, Ruifeng;
Wang, Wenqiang;
Li, Zhihao;
Gao, Qinwu;
Wang, Jin;
Xu, Yongkang;
Yan, Pengfei;
Zhang, Xiaolong;
Zhang, Yilin;
Xu, Yongbing;
Liu, Ronghua;
He, Liang

Publication type:

Article

Rapid Self‐Assembly Process at Air/Water Confined Interface for Highly Aligned Crystalline Polymeric Semiconductor Films.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300029

By:

Wu, Zeng;
Wu, Yangjiang;
Yang, Jiayi;
Yan, Yongkun;
Li, Wenhao;
Yang, Longfei;
Chen, Qiuyuan;
Yi, Zhiying;
Liu, Yunqi;
Chen, Shumin;
Zhao, Yan

Publication type:

Article

Charged Domain Walls in BaTiO3 Crystals Emerging from Superdomain Boundaries.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300005

By:

Bednyakov, Petr S.;
Hlinka, Jiří

Publication type:

Article

Small Size and Low‐Cost TENG‐Based Self‐Powered Vibration Measuring and Alerting System.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300111

By:

Mehamud, Idiris;
Björling, Marcus;
Marklund, Pär;
Shi, Yijun

Publication type:

Article

Microscopic Quantum Transport Processes of Out‐of‐Plane Charge Flow in 2D Semiconductors Analyzed by a Fowler–Nordheim Tunneling Probe.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300051

By:

Shin, Dong Hoon;
Lee, Duk Hyun;
Choi, Sang‐Jun;
Kim, Seonyeong;
Kim, Hakseong;
Watanabe, Kenji;
Taniguchi, Takashi;
Campbell, Eleanor E. B.;
Lee, Sang Wook;
Jung, Suyong

Publication type:

Article

Recent Progress in Multiterminal Memristors for Neuromorphic Applications.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300108

By:

Leng, Yan‐Bing;
Zhang, Yu‐Qi;
Lv, Ziyu;
Wang, Junjie;
Xie, Tao;
Zhu, Shirui;
Qin, Jingrun;
Xu, Runze;
Zhou, Ye;
Han, Su‐Ting

Publication type:

Article

Understanding the Effects of Primary and Secondary Doping via Post‐Treatment of P‐Type and N‐Type Hybrid Organic–Inorganic Thin Film Thermoelectric Materials.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300076

By:

Rubio‐Govea, Rodrigo;
Félix, Roberto;
Wilks, Regan G.;
Bär, Marcus;
Mazzio, Katherine A.

Publication type:

Article

Designing Ionic Conductive Elastomers Using Hydrophobic Networks and Hydrophilic Salt Hydrates with Improved Stability in Air.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300069

By:

Yiming, Burebi;
Zhang, Zhaoxin;
Ali, Nasir;
Lu, Yuchen;
Qu, Shaoxing;
Zhu, Shuze;
Creton, Costantino;
Jia, Zheng

Publication type:

Article

Electronic, Optoelectronic, and Thermoelectric Single‐Molecule Devices with Different Molecular Unit‐Length.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300063

By:

Li, Chenyu;
Cao, Yi;
Ru, Jindou;
Dong, Jun;
Sun, Mengtao

Publication type:

Article

Integrated Memristor Network for Physiological Signal Processing.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300021

By:

Cai, Lei;
Yu, Lianfeng;
Yue, Wenshuo;
Zhu, Yihang;
Yang, Zhiyu;
Li, Yuqi;
Tao, Yaoyu;
Yang, Yuchao

Publication type:

Article

Configurable NbOx Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300018

By:

Han, Chuan Yu;
Fang, Sheng Li;
Cui, Yi Lin;
Liu, Weihua;
Fan, Shi Quan;
Huang, Xiao Dong;
Li, Xin;
Wang, Xiao Li;
Zhang, Guo He;
Tang, Wing Man;
Lai, P. T.;
Liu, Jia;
Wan, Xianjie;
Yu, Zhou;
Geng, Li

Publication type:

Article

Field‐Induced Ferroelectric Phase Evolution During Polarization "Wake‐Up" in Hf0.5Zr0.5O2 Thin Film Capacitors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300016

By:

Saini, Balreen;
Huang, Fei;
Choi, Yoon‐Young;
Yu, Zhouchangwan;
Thampy, Vivek;
Baniecki, John D.;
Tsai, Wilman;
McIntyre, Paul C.

Publication type:

Article

PVDF Based Static Charge Induced Flexoelectric Microphone.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300012

By:

Shehzad, Mudassar;
Pan, Han;
Wang, Shuhao;
Wang, Yaojin

Publication type:

Article

A Memristive Cell with Long Retention Time in 65 nm CMOS Technology.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300010

By:

Assaf, Hussein;
Savaria, Yvon;
Ali, Mohamed;
Nabavi, Morteza;
Sawan, Mohamad

Publication type:

Article

Origin of Topological Hall‐Like Feature in Epitaxial SrRuO3 Thin Films.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300020

By:

Roy, Pinku;
Carr, Adra;
Zhou, Tao;
Paudel, Binod;
Wang, Xuejing;
Chen, Di;
Kang, Kyeong Tae;
Pateras, Anastasios;
Corey, Zachary;
Lin, Shizeng;
Zhu, Jian‐Xin;
Holt, Martin V.;
Yoo, Jinkyoung;
Zapf, Vivien;
Zeng, Hao;
Ronning, Filip;
Jia, Quanxi;
Chen, Aiping

Publication type:

Article

Uncovering the Different Components of Contact Resistance to Atomically Thin Semiconductors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201342

By:

Ber, Emanuel;
Grady, Ryan W.;
Pop, Eric;
Yalon, Eilam

Publication type:

Article

Low Leakage in High‐k Perovskite Gate Oxide SrHfO3.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201341

By:

Kim, Juhan;
Song, Dowon;
Yun, Hwanhui;
Lee, Jaehyeok;
Kim, Jae Ha;
Kim, Jae Hoon;
Kim, Bongju;
Char, Kookrin

Publication type:

Article

Wireless and Flexible Tactile Sensing Array Based on an Adjustable Resonator with Machine‐Learning Perception.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201334

By:

Xu, Baochun;
Chen, Da;
Wang, Yu;
Tang, Ruili;
Yang, Lina;
Feng, Hui;
Liu, Yijian;
Wang, Zhuopeng;
Wang, Fei;
Zhang, Tong

Publication type:

Article

Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201330

By:

Vitusevich, S.;
Nasieka, I.M.;
Naumov, A. V.;
Kalyuzhnyi, V. V.;
Liubchenko, O. I.;
Antypov, I. O.;
Boyko, M. I.;
Belyaev, A. E.

Publication type:

Article

Enhancement of Extraordinary Size Effect on CaRuO3 Ultrathin Films.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201312

By:

Sakoda, M.;
Kouda, M.;
Shinya, K.;
Shimoda, S.

Publication type:

Article

Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201306

By:

Park, Junhyeong;
Jang, Yuseong;
Lee, Jinkyu;
An, Soobin;
Mok, Jinsung;
Lee, Soo‐Yeon

Publication type:

Article

Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201303

By:

Tsubaki, Keiji;
Tsurumaki‐Fukuchi, Atsushi;
Katase, Takayoshi;
Kamiya, Toshio;
Arita, Masashi;
Takahashi, Yasuo

Publication type:

Article

Cryogenic Storage Memory with High‐Speed, Low‐Power, and Long‐Retention Performance.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201299

By:

Hur, Jae;
Kang, Dongsuk;
Moon, Dong‐Il;
Yu, Ji‐Man;
Choi, Yang‐Kyu;
Yu, Shimeng

Publication type:

Article

Investigating the Electromechanical Behavior of Unconventionally Ferroelectric Hf0.5Zr0.5O2‐Based Capacitors Through Operando Nanobeam X‐Ray Diffraction.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201298

By:

Stylianidis, Evgenios;
Surabhi, Pranav;
Hamming‐Green, Ruben;
Salverda, Mart;
Wei, Yingfen;
Burema, Arjan;
Matzen, Sylvia;
Banerjee, Tamalika;
Björling, Alexander;
Mukherjee, Binayak;
Dutta, Sangita;
Aramberri, Hugo;
Íñiguez, Jorge;
Noheda, Beatriz;
Carbone, Dina;
Nukala, Pavan

Publication type:

Article

Printed 700 V/V Gain Amplifiers Based on Organic Source‐Gated Transistors with Field Plates.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201263

By:

Hemmi, Yudai;
Ikeda, Yuji;
Sporea, Radu A.;
Inoue, Satoru;
Hasegawa, Tatsuo;
Matsui, Hiroyuki

Publication type:

Article

Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201259

By:

Fuchsberger, Andreas;
Wind, Lukas;
Sistani, Masiar;
Behrle, Raphael;
Nazzari, Daniele;
Aberl, Johannes;
Prado Navarrete, Enrique;
Vukŭsić, Lada;
Brehm, Moritz;
Schweizer, Peter;
Vogl, Lilian;
Maeder, Xavier;
Weber, Walter M.

Publication type:

Article

Design‐Dependent Switching Mechanisms of Schottky‐Barrier‐Modulated Memristors based on 2D Semiconductor.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201252

By:

Zhou, Hangbo;
Sorkin, Viacheslav;
Chen, Shuai;
Yu, ZhiGen;
Ang, Kah‐Wee;
Zhang, Yong‐Wei

Publication type:

Article

Impedance Spectroscopy on Hafnium Oxide‐Based Memristive Devices.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201227

By:

Marquardt, Richard;
Zahari, Finn;
Carstensen, Jürgen;
Popkirov, George;
Gronenberg, Ole;
Kolhatkar, Gitanjali;
Kohlstedt, Hermann;
Ziegler, Martin

Publication type:

Article

Trap‐Assisted Memristive Switching in HfO2‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201226

By:

Zahari, Finn;
Marquardt, Richard;
Kalläne, Matthias;
Gronenberg, Ole;
Schlueter, Christoph;
Matveyev, Yury;
Haberfehlner, Georg;
Diekmann, Florian;
Nierhauve, Alena;
Buck, Jens;
Hanff, Arndt;
Kolhatkar, Gitanjali;
Kothleitner, Gerald;
Kienle, Lorenz;
Ziegler, Martin;
Carstensen, Jürgen;
Rossnagel, Kai;
Kohlstedt, Hermann

Publication type:

Article

Novel Dielectric Nanogranular Materials with an Electrically Tunable Frequency Response.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201218

By:

Cao, Yang;
Kobayashi, Nobukiyo;
Wang, Cheng;
Takahashi, Saburo;
Maekawa, Sadamichi;
Masumoto, Hiroshi

Publication type:

Article

Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201190

By:

Li, Ning;
Mackin, Charles;
Chen, An;
Brew, Kevin;
Philip, Timothy;
Simon, Andrew;
Saraf, Iqbal;
Han, Jin‐Ping;
Sarwat, Syed Ghazi;
Burr, Geoffrey W.;
Rasch, Malte;
Sebastian, Abu;
Narayanan, Vijay;
Saulnier, Nicole

Publication type:

Article

Picosecond Time‐Scale Resistive Switching Monitored in Real‐Time.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202201104

By:

Csontos, Miklós;
Horst, Yannik;
Olalla, Nadia Jimenez;
Koch, Ueli;
Shorubalko, Ivan;
Halbritter, András;
Leuthold, Juerg

Publication type:

Article

Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 6

Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference (Adv. Electron. Mater. 6/2023).

Masthead: (Adv. Electron. Mater. 6/2023).

Charged Domain Walls in BaTiO<sub>3</sub> Crystals Emerging from Superdomain Boundaries (Adv. Electron. Mater. 6/2023).

Novel Dielectric Nanogranular Materials with an Electrically Tunable Frequency Response (Adv. Electron. Mater. 6/2023).

Photonic Synapses for Image Recognition and High Density Integration of Simplified Artificial Neural Networks.

Ion Gel‐Gated Quasi‐Solid‐State Vertical Organic Electrochemical Transistor and Inverter.

Colossal Gilbert Damping Anisotropy in Heusler‐Alloy Thin Films.

Rapid Self‐Assembly Process at Air/Water Confined Interface for Highly Aligned Crystalline Polymeric Semiconductor Films.

Charged Domain Walls in BaTiO<sub>3</sub> Crystals Emerging from Superdomain Boundaries.

Small Size and Low‐Cost TENG‐Based Self‐Powered Vibration Measuring and Alerting System.

Microscopic Quantum Transport Processes of Out‐of‐Plane Charge Flow in 2D Semiconductors Analyzed by a Fowler–Nordheim Tunneling Probe.

Recent Progress in Multiterminal Memristors for Neuromorphic Applications.

Understanding the Effects of Primary and Secondary Doping via Post‐Treatment of P‐Type and N‐Type Hybrid Organic–Inorganic Thin Film Thermoelectric Materials.

Designing Ionic Conductive Elastomers Using Hydrophobic Networks and Hydrophilic Salt Hydrates with Improved Stability in Air.

Electronic, Optoelectronic, and Thermoelectric Single‐Molecule Devices with Different Molecular Unit‐Length.

Integrated Memristor Network for Physiological Signal Processing.

Configurable NbO<sub>x</sub> Memristors as Artificial Synapses or Neurons Achieved by Regulating the Forming Compliance Current for the Spiking Neural Network.

Field‐Induced Ferroelectric Phase Evolution During Polarization "Wake‐Up" in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Film Capacitors.

PVDF Based Static Charge Induced Flexoelectric Microphone.

A Memristive Cell with Long Retention Time in 65 nm CMOS Technology.

Origin of Topological Hall‐Like Feature in Epitaxial SrRuO<sub>3</sub> Thin Films.

Uncovering the Different Components of Contact Resistance to Atomically Thin Semiconductors.

Low Leakage in High‐k Perovskite Gate Oxide SrHfO<sub>3</sub>.

Wireless and Flexible Tactile Sensing Array Based on an Adjustable Resonator with Machine‐Learning Perception.

Thermometry of AlGaN/GaN 2D Channels at High Electric Fields Using Electrical and Optical Methods.

Enhancement of Extraordinary Size Effect on CaRuO<sub>3</sub> Ultrathin Films.

Synaptic Transistor Based on In‐Ga‐Zn‐O Channel and Trap Layers with Highly Linear Conductance Modulation for Neuromorphic Computing.

Dynamics of an Electrically Driven Phase Transition in Ca<sub>2</sub>RuO<sub>4</sub> Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition.

Cryogenic Storage Memory with High‐Speed, Low‐Power, and Long‐Retention Performance.

Investigating the Electromechanical Behavior of Unconventionally Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>‐Based Capacitors Through Operando Nanobeam X‐Ray Diffraction.

Printed 700 V/V Gain Amplifiers Based on Organic Source‐Gated Transistors with Field Plates.

Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts.

Design‐Dependent Switching Mechanisms of Schottky‐Barrier‐Modulated Memristors based on 2D Semiconductor.

Impedance Spectroscopy on Hafnium Oxide‐Based Memristive Devices.

Trap‐Assisted Memristive Switching in HfO<sub>2</sub>‐Based Devices Studied by In Situ Soft and Hard X‐Ray Photoelectron Spectroscopy.

Novel Dielectric Nanogranular Materials with an Electrically Tunable Frequency Response.

Optimization of Projected Phase Change Memory for Analog In‐Memory Computing Inference.

Picosecond Time‐Scale Resistive Switching Monitored in Real‐Time.