Works matching IS 2199160X AND DT 2023 AND VI 9 AND IP 3

Results: 44

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors (Adv. Electron. Mater. 3/2023)

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201056

By:

Shu, Yu;
Liu, Yongqian;
Cui, Zhou;
Xiong, Rui;
Zhang, Yinggan;
Xu, Chao;
Zheng, Jingying;
Wen, Cuilian;
Wu, Bo;
Sa, Baisheng

Publication type:

Article

Concept of Photoactive Invisible Inks toward Ultralow‐Cost Fabrication of Transistor Photomemories (Adv. Electron. Mater. 3/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202370017

By:

Prakoso, Suhendro Purbo;
Li, Yen‐Ting;
Lai, Juin‐Yih;
Chiu, Yu‐Cheng

Publication type:

Article

Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with Self‐Assembled Monolayer for High‐Precision Neural Network Computation (Adv. Electron. Mater. 3/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202370016

By:

Park, Seongmin;
Seong, Suwon;
Jeon, Gilsu;
Ji, Wonjae;
Noh, Kyungmi;
Kim, Seyoung;
Chung, Yoonyoung

Publication type:

Article

Masthead: (Adv. Electron. Mater. 3/2023).

Published in:: Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202370015
Publication type:: Article

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed (Adv. Electron. Mater. 3/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202370014

By:

Chai, Jixing;
Liu, Qianhu;
Chen, Liang;
Cao, Ben;
Kong, Deqi;
Lin, Tingjun;
Wang, Wenliang;
Li, Guoqiang

Publication type:

Article

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors (Adv. Electron. Mater. 3/2023).

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201056

By:

Shu, Yu;
Liu, Yongqian;
Cui, Zhou;
Xiong, Rui;
Zhang, Yinggan;
Xu, Chao;
Zheng, Jingying;
Wen, Cuilian;
Wu, Bo;
Sa, Baisheng

Publication type:

Article

Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201250

By:

Lan, Jun;
Li, Zhixiong;
Chen, Zhenjie;
Zhu, Quanzhou;
Wang, Wenhui;
Zaheer, Muhammad;
Lu, Jiqing;
Liang, Jinxuan;
Shen, Mei;
Chen, Peng;
Chen, Kai;
Zhang, Guobiao;
Wang, Zhongrui;
Zhou, Feichi;
Lin, Longyang;
Li, Yida

Publication type:

Article

Self‐Powered Photodetector Based on Perovskite/NiOx Heterostructure for Sensitive Visible Light and X‐Ray Detection.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201222

By:

Tao, Kewen;
Xiong, Chenwei;
Lin, Jiachun;
Ma, Decai;
Lin, Shaopeng;
Wang, Biao;
Li, Huashan

Publication type:

Article

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201193

By:

Chai, Jixing;
Liu, Qianhu;
Chen, Liang;
Cao, Ben;
Kong, Deqi;
Lin, Tingjun;
Wang, Wenliang;
Li, Guoqiang

Publication type:

Article

Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201184

By:

Guo, Min;
Ou, Hai;
Xie, Dongyu;
Zhu, Qiaoji;
Wang, Mengye;
Liang, Lingyan;
Liu, Fengjuan;
Ning, Ce;
Cao, Hongtao;
Yuan, Guangcai;
Lu, Xubing;
Liu, Chuan

Publication type:

Article

Inorganic Halide Perovskite Electromagnetic Wave Absorption System with Ultra‐Wide Absorption Bandwidth and High Thermal‐Stability.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201179

By:

Zhang, Zhi;
Xiong, Ziming;
Yao, Yao;
Shi, Xiaomin;
Zhang, Pin;
Yang, Zhiqian;
Zhao, Qing;
Zhou, Wenke

Publication type:

Article

Correlation between Nanoscale Domain Structures and Superconducting Phase Transitions in Highly Crystalline 2D Superconductors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201170

By:

Wang, Libin;
Xu, Chuan;
Liu, Zhen;
Liu, Zhibo;
Yang, Zixuan;
Cheng, Hui‐Ming;
Ren, Wencai;
Kang, Ning

Publication type:

Article

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201163

By:

Bestelink, Eva;
Teng, Hao‐Jing;
Zschieschang, Ute;
Klauk, Hagen;
Sporea, Radu A.

Publication type:

Article

Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201155

By:

Xi, Fengben;
Grenmyr, Andreas;
Zhang, Jiayuan;
Han, Yi;
Bae, Jin Hee;
Grützmacher, Detlev;
Zhao, Qing‐Tai

Publication type:

Article

A Universal Method for Extracting and Quantitatively Analyzing Bias‐Dependent Contact Resistance in Carbon‐Nanotube Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201148

By:

Liu, Dexing;
Wang, Wanting;
Zhang, Jiaona;
Ren, Qinqi;
Fan, Lingchong;
Wang, Yarong;
Zhang, Yiming;
Zhang, Min

Publication type:

Article

Concept of Photoactive Invisible Inks toward Ultralow‐Cost Fabrication of Transistor Photomemories.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201147

By:

Prakoso, Suhendro Purbo;
Li, Yen‐Ting;
Lai, Juin‐Yih;
Chiu, Yu‐Cheng

Publication type:

Article

High‐Performance Black Phosphorus Field‐Effect Transistors with Controllable Channel Orientation.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201126

By:

Wang, Junqi;
Liu, Wei;
Wang, Chunqing

Publication type:

Article

High Performance of Normally‐On and Normally‐Off Devices with Highly Boron‐Doped Source and Drain on H‐Terminated Polycrystalline Diamond.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201122

By:

Zhu, Xiaohua;
Shao, Siwu;
Chan, Siyi;
Tu, Juping;
Ota, Kosuke;
Huang, Yabo;
An, Kang;
Chen, Liangxian;
Wei, Junjun;
Liu, Jinlong;
Li, Chengming;
Kawarada, Hiroshi

Publication type:

Article

Enhancement of the Magnetoresistance in the Mobility‐Engineered Compensated Metal Pt5P2.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201120

By:

Mayo, Alex H.;
Takahashi, Hidefumi;
Ishiwata, Shintaro;
Górnicka, Karolina;
Winiarski, Michał J.;
Jaroszynski, Jan;
Cava, Robert J.;
Xie, Weiwei;
Klimczuk, Tomasz

Publication type:

Article

Low‐Voltage, High‐Performance, Indium‐Tin‐Zinc‐Oxide Thin‐Film Transistors Based on Dual‐Channel and Anodic‐Oxide.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201117

By:

Jin, Jidong;
Lin, Xiaoyu;
Zhang, Jiawei;
Lee, Jeongho;
Xiao, Zhenyuan;
Lee, Soobin;
Kim, Jaekyun

Publication type:

Article

Current Boosting of Self‐Aligned Top‐Gate Amorphous InGaZnO Thin‐Film Transistors under Driving Conditions.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201109

By:

Park, Jingyu;
Choi, Sungju;
Kim, Changwook;
Shin, Hong Jae;
Jeong, Yun Sik;
Bae, Jong Uk;
Oh, Chang Ho;
Oh, Saeroonter;
Kim, Dae Hwan

Publication type:

Article

Quantum Solid Phase and Coulomb Drag in 2D Electron–Electron Bilayers of MoS2.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201105

By:

Huang, Meizhen;
Wu, Zefei;
Wang, Ning;
Chui, Siu‐Tat

Publication type:

Article

Fully Photon Controlled Synaptic Memristor for Neuro‐Inspired Computing.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201093

By:

Shrivastava, Saransh;
Keong, Lai Boon;
Pratik, Sparsh;
Lin, Albert S.;
Tseng, Tseung‐Yuen

Publication type:

Article

Oxynitride Amorphous Carbon Layer for Electrically and Thermally Robust Bipolar Resistive Switching.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201090

By:

Min, SunHwa;
Hyeon, Da Seul;
Jang, Gabriel;
Choi, Jisoo;
Seo, Jeongwoo;
Kwon, Soyeong;
Kim, Dong‐Wook;
Hong, Jin Pyo

Publication type:

Article

Biodegradable and Bioabsorbable Polylactic Acid Ferroelectrets with Prominent Piezoelectric Activity.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201070

By:

Ma, Xingchen;
Zhukov, Sergey;
von Seggern, Heinz;
Sessler, Gerhard M.;
Ben Dali, Omar;
Kupnik, Mario;
Dai, Ying;
He, Pengfei;
Zhang, Xiaoqing

Publication type:

Article

Impact of Charge Carrier Injection/Extraction Performances in Low‐Dimension PEDOT:PSS Organic Electrochemical Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201067

By:

Sych, Galyna;
Rannou, Patrice;
Jullien‐Palletier, Maxime;
Sadki, Saïd;
Bonnassieux, Yvan;
Sanaur, Sébastien

Publication type:

Article

Electro‐Powerless Balloon Soft Actuator with Manually Driven Fluidic Circuit.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201065

By:

Matsuda, Ryosuke;
Song, Zihao;
Ota, Hiroki

Publication type:

Article

Memristive Synapse Based on Single‐Crystalline LiNbO3 Thin Film with Bioinspired Microstructure for Experience‐Based Dynamic Image Mask Generation.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201064

By:

Wang, Jiejun;
Pan, Xinqiang;
Luo, Wenbo;
Shuai, Yao;
Xie, Qin;
Xu, Jiaqi;
Song, Zeqian;
Wu, Chuangui;
Zhang, Wanli

Publication type:

Article

An Attention Mechanism‐Based Adaptive Feedback Computing Component by Neuromorphic Ion Gated MoS2 Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201060

By:

Liu, Chang;
Wang, Yanghao;
Zhang, Teng;
Yuan, Rui;
Yang, Yuchao

Publication type:

Article

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201056

By:

Shu, Yu;
Liu, Yongqian;
Cui, Zhou;
Xiong, Rui;
Zhang, Yinggan;
Xu, Chao;
Zheng, Jingying;
Wen, Cuilian;
Wu, Bo;
Sa, Baisheng

Publication type:

Article

In Situ/Operando Studies for Reduced Eletromigration in Ag Nanowires with Stacking Faults.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201054

By:

Hsueh, Yu‐Hsiang;
Ranjan, Ashok;
Lyu, Lian‐Ming;
Hsiao, Kai‐Yuan;
Chang, Yu‐Cheng;
Lu, Ming‐Pei;
Lu, Ming‐Yen

Publication type:

Article

Ultrasensitive and Wide‐Range Flexible Hydrogen Sensor Based on Pd Nanoparticles Decorated Ultrathin SnO2 Film.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201047

By:

Ren, Qiang;
Zhang, Xin‐Yue;
Chen, Ji‐An;
Fang, Jia‐Bin;
Zi, Tao‐Qing;
Zhu, Lin;
Liu, Chang;
Han, Min;
Cao, Yan‐Qiang;
Li, Ai‐Dong

Publication type:

Article

Multifunctional Ag–In–Zn–S/Cs3Cu2Cl5‐Based Memristors with Coexistence of Non‐Volatile Memory and Volatile Threshold Switching Behaviors for Neuroinspired Computing.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201038

By:

He, Nan;
Ye, Fan;
Liu, Jun;
Sun, Tianlong;
Wang, Xinpeng;
Hou, Wenjie;
Shao, Weijing;
Wan, Xiang;
Tong, Yi;
Xu, Feng;
Sheng, Yang

Publication type:

Article

An Ultrasensitive Sandwiched Heterostructure Planar Photodetector with Gradient Quasi‐2D Perovskite.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201028

By:

Pan, Yiyi;
Wang, Haoliang;
Wang, Yaxin;
Wang, Yanyan;
Li, Xiaoguo;
Liu, Yiting;
Deng, Liangliang;
Liu, Kai;
Hu, Tianxiang;
Liu, Fengcai;
Shi, Zejiao;
Li, Chongyuan;
Wang, Jiao;
Yu, Anran;
Zhang, Xiaolei;
Zhan, Yiqiang

Publication type:

Article

A Flexible Corn Starch‐Based Biomaterial Device Integrated with Capacitive‐Coupled Memristive Memory, Mechanical Stress Sensing, Synapse, and Logic Operation Functions.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201017

By:

Sun, Bai;
Chen, Yuanzheng;
Zhou, Guangdong;
Zhou, Yongzan;
Guo, Tao;
Zhu, Shouhui;
Mao, Shuangsuo;
Zhao, Yong;
Shao, Jinyou;
Li, Yuning

Publication type:

Article

Anion‐Vacancy‐Defect Passivation of a 2D‐Layered Tin‐Based Perovskite Thin‐Film Transistor with Sulfur Doping.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201014

By:

Cho, Jae‐Hyeok;
Go, Ji‐Young;
Bui, Tan Tan;
Mun, Seunguk;
Kim, Yunseok;
Ahn, Kyunghan;
Noh, Yong‐Young;
Kim, Myung‐Gil

Publication type:

Article

Emulating Nociceptive Receptor and LIF Neuron Behavior via ZrOx‐based Threshold Switching Memristor.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201006

By:

Yang, Jia‐He;
Mao, Shi‐Cheng;
Chen, Kuan‐Ting;
Chen, Jen‐Sue

Publication type:

Article

Fabrication of a Hole‐Type Vertical Resistive‐Switching Random‐Access Array and Intercell Interference Induced by Lateral Charge Spreading.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200998

By:

Kim, Seung Soo;
Yong, Soo Kyeom;
Kim, Jihun;
Choi, Jin Myung;
Park, Tae Won;
Kim, Hyun Young;
Kim, Hae Jin;
Hwang, Cheol Seong

Publication type:

Article

Extremely Sensitive Wearable Strain Sensor with Wide Range Based on a Simple Parallel Connection Architecture.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200993

By:

Teng, Fu‐Rui;
Zi, Tao‐Qing;
Fang, Jia‐Bin;
Liu, Chang;
Wu, Di;
Li, Ai‐Dong

Publication type:

Article

High‐Temperature Oxidation‐Resistant Printed Copper Conductors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200979

By:

Khuje, Saurabh;
Alshatnawi, Firas;
Alhendi, Mohammed;
Yu, Jian;
Sheng, Aaron;
Huang, Yulong;
Zhuang, Cheng‐Gang;
Armstrong, Jason;
Zhou, Chi;
Poliks, Mark;
Ren, Shenqiang

Publication type:

Article

Scandium Nitride as a Gateway III‐Nitride Semiconductor for both Excitatory and Inhibitory Optoelectronic Artificial Synaptic Devices.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200975

By:

Rao, Dheemahi;
Pillai, Ashalatha Indiradevi Kamalasanan;
Garbrecht, Magnus;
Saha, Bivas

Publication type:

Article

High‐Performance Cadmium‐Free Blue Quantum Dot Light‐Emitting Devices with Stepwise Double Hole‐Transport Layers.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200970

By:

Luo, Zhiqi;
Yu, Yongshen;
Yang, Kaiyu;
Lin, Lihua;
Lin, Jintang;
Guo, Tailiang;
Hu, Hailong;
Li, Fushan

Publication type:

Article

Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe2 FETs.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200955

By:

Lee, Kwangro;
Ngo, Tien Dat;
Lee, Sungwon;
Shin, Hoseong;
Choi, Min Sup;
Hone, James;
Yoo, Won Jong

Publication type:

Article

Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with Self‐Assembled Monolayer for High‐Precision Neural Network Computation.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202200554

By:

Park, Seongmin;
Seong, Suwon;
Jeon, Gilsu;
Ji, Wonjae;
Noh, Kyungmi;
Kim, Seyoung;
Chung, Yoonyoung

Publication type:

Article