Works matching DE "RANDOM access memory"
Results: 1340
Facing up to LEAKAGE.
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- Power Engineer, 2004, v. 18, n. 4, p. 42
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The Role of Episodic Memories in Current and Future Well-Being.
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- Personality & Social Psychology Bulletin, 2012, v. 38, n. 4, p. 505, doi. 10.1177/0146167211429805
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Tuning Resistive Switching Memory Behavior from Non-volatile to Volatile by Phenoxy Linkages in Soluble Polyimides Containing Carbazole-Tethered Triazole Groups.
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- Macromolecular Chemistry & Physics, 2014, v. 215, n. 23, p. 2374, doi. 10.1002/macp.201400441
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Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application (Adv. Funct. Mater. 8/2023).
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- Advanced Functional Materials, 2023, v. 33, n. 8, p. 1, doi. 10.1002/adfm.202370041
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Light‐Mediated Multi‐Level Flexible Copper Iodide Resistive Random Access Memory for Forming‐Free, Ultra‐Low Power Data Storage Application.
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- Advanced Functional Materials, 2023, v. 33, n. 8, p. 1, doi. 10.1002/adfm.202211022
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High‐Performance Organic Electrochemical Transistors and Neuromorphic Devices Comprising Naphthalenediimide‐Dialkoxybithiazole Copolymers Bearing Glycol Ether Pendant Groups.
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- Advanced Functional Materials, 2022, v. 32, n. 27, p. 1, doi. 10.1002/adfm.202201593
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Electrical Manipulation of Exchange Bias in an Antiferromagnet/Ferromagnet‐Based Device via Spin–Orbit Torque.
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- Advanced Functional Materials, 2022, v. 32, n. 26, p. 1, doi. 10.1002/adfm.202112406
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High‐Speed Ionic Synaptic Memory Based on 2D Titanium Carbide MXene (Adv. Funct. Mater. 12/2022).
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- Advanced Functional Materials, 2022, v. 32, n. 12, p. 1, doi. 10.1002/adfm.202270071
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Low‐Energy Oxygen Plasma Injection of 2D Bi<sub>2</sub>Se<sub>3</sub> Realizes Highly Controllable Resistive Random Access Memory.
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- Advanced Functional Materials, 2022, v. 32, n. 1, p. 1, doi. 10.1002/adfm.202108455
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Highly Efficient Nonvolatile Magnetization Switching and Multi‐Level States by Current in Single Van der Waals Topological Ferromagnet Fe<sub>3</sub>GeTe<sub>2</sub>.
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- Advanced Functional Materials, 2021, v. 31, n. 49, p. 1, doi. 10.1002/adfm.202105992
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Large‐Scale and Robust Multifunctional Vertically Aligned MoS<sub>2</sub> Photo‐Memristors.
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- Advanced Functional Materials, 2020, v. 30, n. 51, p. 1, doi. 10.1002/adfm.202005718
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Introducing pinMOS Memory: A Novel, Nonvolatile Organic Memory Device.
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- Advanced Functional Materials, 2020, v. 30, n. 4, p. N.PAG, doi. 10.1002/adfm.201907119
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Flexible and Waterproof Resistive Random‐Access Memory Based on Nitrocellulose for Skin‐Attachable Wearable Devices.
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- Advanced Functional Materials, 2020, v. 30, n. 1, p. N.PAG, doi. 10.1002/adfm.201907437
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Associative Memory for Image Recovery with a High‐Performance Memristor Array.
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- Advanced Functional Materials, 2019, v. 29, n. 30, p. N.PAG, doi. 10.1002/adfm.201900155
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Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability.
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- Advanced Functional Materials, 2019, v. 29, n. 8, p. N.PAG, doi. 10.1002/adfm.201806278
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2D Metal–Organic Framework Nanosheets with Time‐Dependent and Multilevel Memristive Switching.
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- Advanced Functional Materials, 2019, v. 29, n. 3, p. N.PAG, doi. 10.1002/adfm.201806637
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Experimental study of neutron-induced soft errors in modern cardiac pacemakers.
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- Journal of Interventional Cardiac Electrophysiology, 2012, v. 33, n. 1, p. 19, doi. 10.1007/s10840-011-9609-6
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An efficient front-tracking method for simulation of multi-density bubbles.
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- International Journal for Numerical Methods in Fluids, 2017, v. 84, n. 8, p. 445, doi. 10.1002/fld.4355
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FRAM: Framed ALOHA for 5G Super Real-Time Multimedia Random Access with Packet Slicing.
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- Wireless Personal Communications, 2019, v. 106, n. 3, p. 1253, doi. 10.1007/s11277-019-06212-5
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Efficient Android Software Development Using MIT App Inventor 2 for Bluetooth-Based Smart Home.
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- Wireless Personal Communications, 2019, v. 105, n. 1, p. 233, doi. 10.1007/s11277-018-6110-x
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Analysis and Implementation of High Performance Reconfigurable Finite Impulse Response Filter Using Distributed Arithmetic.
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- Wireless Personal Communications, 2018, v. 102, n. 4, p. 3413, doi. 10.1007/s11277-018-5375-4
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Variational Bayes Based Multiuser Detection for On-Off Random Access Channels.
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- Wireless Personal Communications, 2018, v. 100, n. 3, p. 895, doi. 10.1007/s11277-018-5356-7
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Throughput Maximization of CSMA in Cognitive Radio Networks with Cooperative Spectrum Sensing.
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- Wireless Personal Communications, 2017, v. 92, n. 4, p. 1473, doi. 10.1007/s11277-016-3616-y
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A Two Level Broker System for Infrastructure as a Service Cloud.
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- Wireless Personal Communications, 2016, v. 90, n. 3, p. 1135, doi. 10.1007/s11277-016-3382-x
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MyopicMAC: A Throughput-Optimal Random Access Scheme for Distributed Wireless Networks.
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- Wireless Personal Communications, 2016, v. 86, n. 3, p. 1693, doi. 10.1007/s11277-015-3014-x
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Analysis of Slotted-Access-Based Channel Access Control Protocol for LTE-Advanced Networks.
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- Wireless Personal Communications, 2015, v. 85, n. 1, p. 9, doi. 10.1007/s11277-015-2725-3
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Performance Analysis of Cognitive Radio Spectrum Access with Different Primary User Access Schemes.
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- Wireless Personal Communications, 2014, v. 75, n. 1, p. 309, doi. 10.1007/s11277-013-1364-9
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IO-MAC: An Enhancement of IEEE 802.11 DCF Using Implicit Ordering.
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- Wireless Personal Communications, 2013, v. 72, n. 2, p. 1467, doi. 10.1007/s11277-013-1089-9
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Opportunistic Scheduling in Multiuser OFDM Systems with Clustered Feedback.
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- Wireless Personal Communications, 2010, v. 52, n. 1, p. 209, doi. 10.1007/s11277-008-9502-5
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基于轻量级分组密码算法的 SoC 安全存储器设计.
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- Electronic Science & Technology, 2023, v. 36, n. 9, p. 15, doi. 10.16180/j.cnki.issn1007-7820.2023.09.003
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A Framework for Megascale Agent Based Model Simulations on Graphics Processing Units.
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- Journal of Artificial Societies & Social Simulation, 2008, v. 11, n. 4, p. 2
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Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>.
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- Communications Chemistry, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42004-019-0114-7
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基于马尔可夫过程的 ZPW-2000A轨道电路共因失效分析.
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- Railway Signalling & Communication Engineering, 2022, v. 19, n. 10, p. 27, doi. 10.3969/j.issn.1673-4440.2022.Z1.007
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Fundamental causal bounds of quantum random access memories.
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- NPJ Quantum Information, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41534-024-00848-3
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Resource-efficient simulation of noisy quantum circuits and application to network-enabled QRAM optimization.
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- NPJ Quantum Information, 2023, v. 9, n. 1, p. 1, doi. 10.1038/s41534-023-00773-x
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Resource-efficient simulation of noisy quantum circuits and application to network-enabled QRAM optimization.
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- NPJ Quantum Information, 2023, v. 9, n. 1, p. 1, doi. 10.1038/s41534-023-00773-x
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An identity between the m-spotty weight enumerators of a linear code and its dual.
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- Turkish Journal of Mathematics, 2012, v. 36, n. 4, p. 641, doi. 10.3906/mat-1103-55
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Electrical Manipulation of Antiferromagnetic Random‐Access Memory Device by the Interplay of Spin‐Orbit Torque and Spin‐Transfer Torque.
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- Advanced Electronic Materials, 2024, v. 10, n. 6, p. 1, doi. 10.1002/aelm.202300779
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Lifetime Improvement of 28 nm Resistive Random Access Memory Chip by Machine Learning‐Assisted Prediction Model Collaborated with Resurrection Algorithm.
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- Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300504
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Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys.
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- Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300581
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Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys (Adv. Electron. Mater. 3/2024).
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- Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300581
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Accurate Weight Update in an Electrochemical Random‐Access Memory Based Cross‐Point Array Using Channel‐High Half‐Bias Scheme for Deep Learning Accelerator.
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- Advanced Electronic Materials, 2023, v. 9, n. 12, p. 1, doi. 10.1002/aelm.202300476
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Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device.
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- Advanced Electronic Materials, 2023, v. 9, n. 8, p. 1, doi. 10.1002/aelm.202300165
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Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity.
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- Advanced Electronic Materials, 2023, v. 9, n. 8, p. 1, doi. 10.1002/aelm.202300211
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Analogue Artificial Synaptic Performance of Self‐Rectifying Resistive Switching Device (Adv. Electron. Mater. 8/2023).
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- Advanced Electronic Materials, 2023, v. 9, n. 8, p. 1, doi. 10.1002/aelm.202370038
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Impact of Oxygen Reservoir Layer on 3T Oxygen Ion‐based Electrochemical Random Access Memory Performance.
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- Advanced Electronic Materials, 2023, v. 9, n. 7, p. 1, doi. 10.1002/aelm.202300133
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Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201137
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Silkworm Hemolymph Resistance Random Access Memory with High Stability and Low Power Consumption.
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- Advanced Electronic Materials, 2023, v. 9, n. 4, p. 1, doi. 10.1002/aelm.202201032
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Improved Performance of Hf<sub>x</sub>Zn<sub>y</sub>O‐Based RRAM and its Switching Characteristics down to 4 K Temperature.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201250
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Nonvolatile Electrochemical Random‐Access Memory under Short Circuit.
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- Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200958
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