Works matching IS 2199160X AND DT 2022 AND VI 8 AND IP 10

Results: 66

Space Charge Behavior in Epoxy‐Based Dielectrics: Progress and Perspective (Adv. Electron. Mater. 10/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202270054

By:

Liu, Peng;
Xie, Zongliang;
Pang, Xi;
Xu, Tianlei;
Zhang, Siyu;
Morshuis, Peter H. F.;
Li, He;
Peng, Zongren

Publication type:

Article

Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors (Adv. Electron. Mater. 10/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202270053

By:

Ryu, Huije;
Kim, Dong‐Hyun;
Kwon, Junyoung;
Park, Sang Kyu;
Lee, Wanggon;
Seo, Hyungtak;
Watanabe, Kenji;
Taniguchi, Takashi;
Kim, SunPhil;
van der Zande, Arend M.;
Son, Jangyup;
Lee, Gwan‐Hyoung

Publication type:

Article

On‐Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors (Adv. Electron. Mater. 10/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200480

By:

Ma, Zichao;
Estrada, Cristine Jin;
Gong, Kui;
Zhang, Lining;
Chan, Mansun

Publication type:

Article

Masthead: (Adv. Electron. Mater. 10/2022).

Published in:: Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202270051
Publication type:: Article

Topologically Protected All‐Optical Memory (Adv. Electron. Mater. 10/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202270050

By:

Choi, Seou;
Kim, Jungmin;
Kwak, Jeonghun;
Park, Namkyoo;
Yu, Sunkyu

Publication type:

Article

Topologically Protected All‐Optical Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200579

By:

Choi, Seou;
Kim, Jungmin;
Kwak, Jeonghun;
Park, Namkyoo;
Yu, Sunkyu

Publication type:

Article

Soft Biomaterials Based Flexible Artificial Synapse for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200449

By:

Guo, Tao;
Ge, Jiawei;
Sun, Bai;
Pan, Kangqiang;
Pan, Zhao;
Wei, Lan;
Yan, Yong;
Zhou, Y. Norman;
Wu, Yimin A.

Publication type:

Article

Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200448

By:

Stecconi, Tommaso;
Guido, Roberto;
Berchialla, Luca;
La Porta, Antonio;
Weiss, Jonas;
Popoff, Youri;
Halter, Mattia;
Sousa, Marilyne;
Horst, Folkert;
Dávila, Diana;
Drechsler, Ute;
Dittmann, Regina;
Offrein, Bert Jan;
Bragaglia, Valeria

Publication type:

Article

Homogeneous Palladium Diselenide pn‐Junction Diodes for Reconfigurable Circuit Applications (Adv. Electron. Mater. 10/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202270049

By:

Lee, Minjong;
Park, Chang Yong;
Sim, Sangjun;
Lee, Kimoon;
Lee, Young Tack

Publication type:

Article

An OFET‐Based Involutive Logic Circuit with Wide‐Range Threshold Shift Compensability.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200442

By:

Yan, Yongkun;
Wu, Yangjiang;
Shao, Lin;
Yang, Longfei;
Wu, Zeng;
Li, Wenhao;
Yi, Zhengran;
Liu, Yunqi;
Zhao, Yan

Publication type:

Article

Introducing Spontaneously Phase‐Separated Heterogeneous Interfaces Enables Low Power Consumption and High Reliability for Phase Change Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200437

By:

Zeng, Yuntao;
Li, Han;
Zhu, Yunlai;
Cheng, Xiaomin;
Xu, Ming;
Tong, Hao;
Miao, Xiangshui

Publication type:

Article

Power‐Efficient and Highly Uniform BiFeO3‐Based Memristors Optimized with TiInSnO Electrode Interfacial Effect.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200435

By:

Xia, Qing;
Qin, Yuxiang;
Qiu, Peilun

Publication type:

Article

Electrode Engineering in MoS2 MOSFET: Different Semiconductor/Metal Interfaces.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200513

By:

Li, Yang;
Zhang, Xisai;
Duan, Xinpei;
Niu, Wencheng;
Zhao, Shengjie;
He, Xiaobo;
Huang, Hao;
Liu, Xingqiang;
Zou, Xuming;
Li, Lei;
Shan, Fukai;
Yang, Zhenyu

Publication type:

Article

Photo‐Synaptic Oxide Transistors with Al2O3/SiOx Stacked Gate Dielectric Exhibiting 1024 Conduction States with Good Linearity.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200494

By:

Lim, Jung Wook;
Park, Min A.;
Kim, Jieun

Publication type:

Article

On‐Chip Integrated High Gain Complementary MoS2 Inverter Circuit with Exceptional High Hole Current P‐Channel Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200480

By:

Ma, Zichao;
Estrada, Cristine Jin;
Gong, Kui;
Zhang, Lining;
Chan, Mansun

Publication type:

Article

Electrical Field Driven Structural Evolutions of Polymorphic Nanodomains in Ferroelectric Ba(Zr,Ti)O3 Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200465

By:

Ren, Yuhang;
Kurt, Onur;
Cheng, Hongbo;
Le, Tong;
Greenbaum, Steve;
Ouyang, Jun

Publication type:

Article

Sputtered Electrolyte‐Gated Transistor with Modulated Metaplasticity Behaviors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200463

By:

Fu, Yang Ming;
Li, Hu;
Huang, Long;
Wei, Tianye;
Hidayati, Faricha;
Song, Aimin

Publication type:

Article

Raman Spectroscopy of Few‐Layers TaS2 and Mo‐Doped TaS2 with Enhanced Superconductivity.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200457

By:

Valencia‐Ibáñez, Santiago;
Jiménez‐Guerrero, Diana;
Salcedo‐Pimienta, Jose D.;
Vega‐Bustos, Karen;
Cárdenas‐Chirivi, Gabriel;
López‐Manrique, Laura;
Herrera‐Vasco, Edwin;
Galvis, Jose A.;
Hernández, Yenny;
Giraldo‐Gallo, Paula

Publication type:

Article

Remarkably High Conductivity and Power Factor in D–D′‐type Thermoelectric Polymers Based on Indacenodithiophene.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200456

By:

Tripathi, Ayushi;
Seo, Bo Eun;
Kim, Min Joo;
Lee, Yoonjoo;
Lee, Soonyong;
Yoon, Sang Eun;
Kim, Un Jeong;
Kwon, Young Wan;
Seo, Hyungtak;
Kwak, Kyungwon;
Kim, Jong H.;
Woo, Han Young

Publication type:

Article

Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra‐Thin Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200432

By:

Kim, Min Ju;
Martinez, Alba;
Jeong, Jaejoong;
Kim, Seongho;
Hwang, Wan Sik;
Cho, Byung Jin

Publication type:

Article

A Conductive Molecular Semiconductor Composite with Over 160 °C Glass Transition Temperature for Heat‐Resistant Perovskite Solar Cells.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200425

By:

Xie, Xinrui;
He, Lifei;
Wei, Yuefang;
Li, Tianyu;
Yuan, Yi;
Zhang, Jing;
Wang, Peng

Publication type:

Article

Inverter and Ternary Content‐Addressable Memory Based on Carbon Nanotube Transistors Using Chemical Doping Strategy.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200424

By:

He, Nian;
Yuan, Qi;
Wang, Yufei;
Sun, Yanmei;
Wen, Dianzhong

Publication type:

Article

Second‐Order Memristor Based on All‐Oxide Multiferroic Tunnel Junction for Biorealistic Emulation of Synapses.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200421

By:

Khanas, Anton;
Hebert, Christian;
Becerra, Loïc;
Portier, Xavier;
Jedrecy, Nathalie

Publication type:

Article

All‐Electrical Programmable Domain‐Wall Spin Logic‐In‐Memory Device.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200412

By:

Wang, Weiyang;
Sheng, Yu;
Zheng, Yuanhui;
Ji, Yang;
Wang, Kaiyou

Publication type:

Article

Self‐Powered and High‐Performance Alternating Current Photodetectors to enhance Broadband Photodetection.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200392

By:

Singh, Ranveer;
Kumar, Mohit;
Kim, Unjeong;
Seo, Hyungtak

Publication type:

Article

High‐Performance p‐type 2D FET Based on Monolayer GeC with High Hole Mobility: A DFT‐NEGF Study.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200388

By:

Yang, Jialin;
Chen, Chuyao;
Zhang, Jingwen;
Zhou, Wenhan;
Qu, Hengze;
Li, Jing;
Guo, Tingting;
Shi, Xiaoqin;
Wu, Zhenhua;
Zhang, Shengli

Publication type:

Article

Ultralow Current Switching of Synthetic‐Antiferromagnetic Magnetic Tunnel Junctions Via Electric‐Field Assisted by Spin–Orbit Torque.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200382

By:

Zink, Brandon R.;
Zhang, Delin;
Li, Hongshi;
Benally, Onri J.;
Lv, Yang;
Lyu, Deyuan;
Wang, Jian‐Ping

Publication type:

Article

Two‐Dimensional Tellurene Transistors with Low Contact Resistance and Self‐Aligned Catalytic Thinning Process.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200380

By:

Lin, Ziyuan;
Wang, Jingli;
Chen, Jiewei;
Wang, Cong;
Liu, Jidong;
Zhang, Wenjing;
Chai, Yang

Publication type:

Article

Self‐Imaging Based Programmable Spin‐Wave Lookup Tables.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200373

By:

Gołębiewski, Mateusz;
Gruszecki, Paweł;
Krawczyk, Maciej

Publication type:

Article

Wireless Multiferroic Memristor with Coupled Giant Impedance and Artificial Synapse Application.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200370

By:

Wang, Yao;
Xiao, Rui;
Xiao, Ning;
Wang, Zhongfeng;
Chen, Lei;
Wen, Yumei;
Li, Ping

Publication type:

Article

Strain Driven Conducting Domain Walls in a Mott Insulator.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200366

By:

Puntigam, Lukas;
Altthaler, Markus;
Ghara, Somnath;
Prodan, Lilian;
Tsurkan, Vladimir;
Krohns, Stephan;
Kézsmárki, István;
Evans, Donald M.

Publication type:

Article

Low Energy and Analog Memristor Enabled by Regulation of Ru ion Motion for High Precision Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200365

By:

Kim, Ji Eun;
Kwon, Jae Uk;
Chun, Suk Yeop;
Song, Young Geun;
Jeong, Doo Seok;
Kang, Chong‐Yun;
Kim, Seong Keun;
Nahm, Sahn;
Yoon, Jung Ho

Publication type:

Article

Insights into the Origins of Minority Carrier Traps in Solution‐Processed Organic Semiconductors and Their Effects on Transistor Photostability.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200355

By:

Ruan, Xiaobin;
Cheng, Shuiling;
Deng, Wei;
Tan, Yuan;
Lu, Zhengjun;
Shi, Jialin;
Zhang, Xiujuan;
Jie, Jiansheng

Publication type:

Article

Hydrogen Atom Doping—A Versatile Method for Modulated Interface Resistive Switching.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200353

By:

Vanka, Srinivas;
Shin, Hyungki;
Davidson, Bruce A.;
Liu, Chong;
Zou, Ke

Publication type:

Article

A Vis‐SWIR Photonic Synapse with Low Power Consumption Based on WSe2/In2Se3 Ferroelectric Heterostructure.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200343

By:

Li, Xuan;
Li, Shuo;
Tang, Bin;
Liao, Jianhui;
Chen, Qing

Publication type:

Article

Unveiling the Complex Magnetization Reversal Process in 3D Nickel Nanowire Networks.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200342

By:

Ruiz‐Clavijo, Alejandra;
Caballero‐Calero, Olga;
Navas, David;
Ordoñez‐Cencerrado, Amanda A.;
Blanco‐Portals, Javier;
Peiró, Francesca;
Sanz, Ruy;
Martín‐González, Marisol

Publication type:

Article

Two‐Terminal Self‐Gating Random‐Access Memory Based on Partially Aligned 2D Heterostructures.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200282

By:

Lee, Chang Jun;
Park, Myung Uk;
Kim, Sung Hyun;
Kim, Myeongjin;
Lee, Kyo‐Seok;
Yoo, Kyung‐Hwa

Publication type:

Article

Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200280

By:

Zhou, Jitong;
Pan, Wengao;
Zheng, Dawei;
Liu, Fayang;
Li, Guijun;
Zhou, Xianda;
Wang, Kai;
Zhang, Shengdong;
Lu, Lei

Publication type:

Article

Resistive Switching in Ferroelectric Bi2FeCrO6 Thin Films and Impact on the Photovoltaic Effect.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200276

By:

Walch, David S.;
Yun, Yeseul;
Ramakrishnegowda, Niranjan;
Mühlenbein, Lutz;
Lotnyk, Andriy;
Himcinschi, Cameliu;
Bhatnagar, Akash

Publication type:

Article

Artificial Synapse Based on Bio‐Hierarchical Porous Memristor Driven by Multilevel‐Ions Migration.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200269

By:

Zhang, Jingjing;
Ji, Yuhang;
Gao, Qin;
Gao, Juan;
Geng, Xueli;
Li, Haoze;
Shi, Hongliang;
Wang, Mei;
Xiao, Zhisong;
Chu, Paul K.;
Huang, Anping

Publication type:

Article

Space Charge Behavior in Epoxy‐Based Dielectrics: Progress and Perspective.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200259

By:

Liu, Peng;
Xie, Zongliang;
Pang, Xi;
Xu, Tianlei;
Zhang, Siyu;
Morshuis, Peter H. F.;
Li, He;
Peng, Zongren

Publication type:

Article

Dual Piezoelectric/Triboelectric Behavior of BTO/SU‐8 Photopatternable Nanocomposites for Highly Efficient Mechanical Energy Harvesting.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200338

By:

Beigh, Nadeem Tariq;
Singh, Shalini;
Goswami, Ankur;
Mallick, Dhiman

Publication type:

Article

Temporal Pattern Coding in Ionic Memristor‐Based Spiking Neurons for Adaptive Tactile Perception.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200334

By:

Xie, Zhuolin;
Zhu, Xiaojian;
Wang, Wei;
Guo, Zhecheng;
Zhang, Yuejun;
Liu, Huiyuan;
Sun, Cui;
Tang, Minghua;
Gao, Shuang;
Li, Run‐Wei

Publication type:

Article

Highly Flexible and Asymmetric Hexagonal‐Shaped Crystalline Structured Germanium Dioxide‐Based Multistate Resistive Switching Memory Device for Data Storage and Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200332

By:

Chougale, Mahesh Y.;
Khan, Muhammad Umair;
Kim, Jungmin;
Furqan, Chaudhry Muhammad;
Saqib, Qazi Muhammad;
Shaukat, Rayyan Ali;
Patil, Swapnil R.;
Mohammad, Baker;
Kwok, Hoi‐Sing;
Bae, Jinho

Publication type:

Article

Mapping Thermoelectric Transport in a Multicomponent Alloy Space.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200327

By:

Gurunathan, Ramya;
Sarker, Suchismita;
Borg, Christopher K. H.;
Saal, James;
Ward, Logan;
Mehta, Apurva;
Snyder, G. Jeffrey

Publication type:

Article

A Van Der Waals Photo‐Ferroelectric Synapse.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200326

By:

Cai, Yao;
Zhang, Lifu;
Jiang, Jie;
Hu, Yang;
Chen, Zhizhong;
Jia, Ru;
Sun, Chengliang;
Shi, Jian

Publication type:

Article

Humidity‐Enabled Organic Artificial Synaptic Devices with Ultrahigh Moisture Resistivity.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200320

By:

Li, Jiayu;
Qian, Yangzhou;
Li, Wen;
Lin, Yen‐Hung;
Qian, Haowen;
Zhang, Tao;
Sun, Ke;
Wang, Jin;
Zhou, Jia;
Chen, Ye;
Zhu, Jintao;
Zhang, Guangwei;
Yi, Mingdong;
Huang, Wei

Publication type:

Article

Few‐layered MoS2 Based Vertical van der Waals p‐n Homojunction by Highly‐efficient N2 Plasma Implantation.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200299

By:

Shan, Yufeng;
Yin, Ziwei;
Zhu, Jiaqi;
Li, Xin;
Dou, Wei;
Wang, Yue;
Liu, Chixian;
Deng, Huiyong;
Dai, Ning

Publication type:

Article

Development of Low‐Temperature Doping Process in CdSe‐Nanocrystal Thin Films for Flexible Electronic and Optoelectronic Devices.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200297

By:

Lee, Yong Min;
Jung, Byung Ku;
Ahn, Junhyuk;
Park, Taesung;
Shin, Chanho;
Ng, Tse Nga;
Kim, In Soo;
Choi, Ji‐Hyuk;
Oh, Soong Ju

Publication type:

Article

X‐ray Detectors With Ultrahigh Sensitivity Employing High Performance Transistors Based on a Fully Organic Small Molecule Semiconductor/Polymer Blend Active Layer.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200293

By:

Tamayo, Adrián;
Fratelli, Ilaria;
Ciavatti, Andrea;
Martínez‐Domingo, Carme;
Branchini, Paolo;
Colantoni, Elisabetta;
De Rosa, Stefania;
Tortora, Luca;
Contillo, Adriano;
Santiago, Raul;
Bromley, Stefan T.;
Fraboni, Beatrice;
Mas‐Torrent, Marta;
Basiricò, Laura

Publication type:

Article