Highly Stretchable MoS₂‐Based Transistors with Opto‐Synaptic Functionalities.

Li, Jiawei; Li, Na; Wang, Qinqin; Wei, Zheng; He, Congli; Shang, Dashan; Guo, Yutuo; Zhang, Woyu; Tang, Jian; Liu, Jieying; Wang, Shuopei; Yang, Wei; Yang, Rong; Shi, Dongxia; Zhang, Guangyu

Stretchable devices can form intimate interfaces with the attached objects, giving birth to widespread applications in wearable electronics, bioelectronics, and artificial bionics. The emerging 2D materials are considered to be ideal candidates for stretchable electronics due to their ultra‐thin nature and excellent mechanical properties. However, stretchable 2D semiconductor devices previously demonstrated usually work at insufficient strain range with poor device performances mostly due to a mechanical failure. Here, the fabrication of buckled monolayer molybdenum disulfide (MoS2) field effect transistors (FETs) on elastomeric substrates is reported. These stretchable MoS2 FETs show stable performances with mobility of ≈30 cm2 V−1 s−1, on/off ratio of ≈108, and subthreshold swing (SS) of ≈180 mV dec−1 after many cycled stretching‐release processes under more than 10% strain. In particular, the feasibility of applying these stretchable MoS2 transistors in optoelectronic synapse and neural network simulation in recognition tasks has been demonstrated.

FIELD-effect transistors; MOLYBDENUM disulfide; MECHANICAL failures; SEMICONDUCTOR devices; TRANSISTORS; WEARABLE technology; BIOELECTRONICS

Advanced Electronic Materials, 2022, Vol 8, Issue 9, p1

2199-160X

Academic Journal

10.1002/aelm.202200238