Works matching IS 2199160X AND DT 2021 AND VI 7 AND IP 7

Results: 36

Core‐shell Single‐nanowire: Core–Shell Single‐Nanowire Photodetector with Radial Carrier Transport: an Opportunity to Break the Responsivity‐Speed Trade‐off (Adv. Electron. Mater. 7/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170027

By:

Cao, Guoyang;
Chen, Guoqing;
Li, Xiaofeng

Publication type:

Article

Asymmetric Self‐driven Photodetector: 2D WS2 Based Asymmetric Schottky Photodetector with High Performance (Adv. Electron. Mater. 7/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170026

By:

Gao, Wei;
Zhang, Shuai;
Zhang, Feng;
Wen, Peiting;
Zhang, Li;
Sun, Yiming;
Chen, Hongyu;
Zheng, Zhaoqiang;
Yang, Mengmeng;
Luo, Dongxiang;
Huo, Nengjie;
Li, Jingbo

Publication type:

Article

Graphene Diodes: Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics (Adv. Electron. Mater. 7/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170025

By:

Wang, Zhenxing;
Hemmetter, Andreas;
Uzlu, Burkay;
Saeed, Mohamed;
Hamed, Ahmed;
Kataria, Satender;
Negra, Renato;
Neumaier, Daniel;
Lemme, Max C.

Publication type:

Article

Masthead: (Adv. Electron. Mater. 7/2021).

Published in:: Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170024
Publication type:: Article

Optoelectronic RAM: Multifunctional Optoelectronic Random Access Memory Device Based on Surface‐Plasma‐Treated Inorganic Halide Perovskite (Adv. Electron. Mater. 7/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170023

By:

Liu, Qi;
Yue, Wenjing;
Li, Yang;
Wang, Wenxiao;
Xu, Lei;
Wang, Yaqi;
Gao, Song;
Zhang, Chunwei;
Kan, Hao;
Li, Chao

Publication type:

Article

Visible Light Communications: Co‐Evaporated Perovskite Light‐Emitting Transistor Operating at Room Temperature (Adv. Electron. Mater. 7/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170022

By:

Klein, Maciej;
Li, Jia;
Bruno, Annalisa;
Soci, Cesare

Publication type:

Article

Frontiers in Electronic and Optoelectronic Devices Based on 2D Materials.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100444

By:

Fu, Jianye;
Qiu, Meng;
Bao, Wenzhong;
Zhang, Han

Publication type:

Article

Co‐Evaporated Perovskite Light‐Emitting Transistor Operating at Room Temperature.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100403

By:

Klein, Maciej;
Li, Jia;
Bruno, Annalisa;
Soci, Cesare

Publication type:

Article

Simultaneous Enhancement of Actuation Strain and Mechanical Strength of Nanoporous Ni–Mn Actuators.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100381

By:

Cheng, Chuan;
Lührs, Lukas;
Krekeler, Tobias

Publication type:

Article

Multifunctional Optoelectronic Random Access Memory Device Based on Surface‐Plasma‐Treated Inorganic Halide Perovskite.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100366

By:

Liu, Qi;
Yue, Wenjing;
Li, Yang;
Wang, Wenxiao;
Xu, Lei;
Wang, Yaqi;
Gao, Song;
Zhang, Chunwei;
Kan, Hao;
Li, Chao

Publication type:

Article

Magnetic‐Sensitive Crack Sensor with Ultrahigh Sensitivity at Room Temperature by Depositing Graphene Nanosheets upon a Flexible Magnetic Film.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100335

By:

Huang, Jianyu;
Ma, Zheng;
Wu, Zhenhua;
Peng, Linghui;
Su, Bin

Publication type:

Article

1/f Noise Characterization of Bilayer MoS2 Field‐Effect Transistors on Paper with Inkjet‐Printed Contacts and hBN Dielectrics.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100283

By:

Pimpolari, Lorenzo;
Calabrese, Gabriele;
Conti, Silvia;
Worsley, Robyn;
Majee, Subimal;
Polyushkin, Dmitry K.;
Paur, Matthias;
Casiraghi, Cinzia;
Mueller, Thomas;
Iannaccone, Giuseppe;
Macucci, Massimo;
Fiori, Gianluca

Publication type:

Article

A Wearable Sustainable Moisture‐Induced Electricity Generator Based on rGO/GO/rGO Sandwich‐Like Structural Film.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100222

By:

Chen, Si;
Xia, Hong;
Ni, Qing‐Qing

Publication type:

Article

Highly Sensitive Capacitive Pressure Sensor Based on a Micropyramid Array for Health and Motion Monitoring.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100174

By:

Zhang, Zian;
Gui, Xuchun;
Hu, Qingmei;
Yang, Leilei;
Yang, Rongliang;
Huang, Bingfang;
Yang, Bo‐Ru;
Tang, Zikang

Publication type:

Article

Simultaneously Improved Thermoelectric and Mechanical Properties Driven by MgB2 Doping in Bi0.4Sb1.6Te3 Based Alloys.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100173

By:

Qin, Haixu;
Cui, Bo;
Wang, Wei;
Sun, Sibo;
Qin, Dandan;
Guo, Muchun;
Xie, Liangjun;
Guo, Fengkai;
Cai, Wei;
Sui, Jiehe

Publication type:

Article

Processable Thiophene‐Based Polymers with Tailored Electronic Properties and their Application in Solid‐State Electrochromic Devices Using Nanoparticle Films.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100166

By:

Moreira, Tiago;
Maria, Francesca Di;
Zangoli, Mattia;
Fabiano, Eduardo;
Manet, Ilse;
Mazzaro, Raffaello;
Morandi, Vittorio;
Marinelli, Martina;
Gigli, Giuseppe;
Parola, António Jorge;
Laia, César A. T.;
Barbarella, Giovanna

Publication type:

Article

Inkjet Printed Circuits with 2D Semiconductor Inks for High‐Performance Electronics.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202100112

By:

Carey, Tian;
Arbab, Adrees;
Anzi, Luca;
Bristow, Helen;
Hui, Fei;
Bohm, Sivasambu;
Wyatt‐Moon, Gwenhivir;
Flewitt, Andrew;
Wadsworth, Andrew;
Gasparini, Nicola;
Kim, Jong M.;
Lanza, Mario;
McCulloch, Iain;
Sordan, Roman;
Torrisi, Felice

Publication type:

Article

Highly Sensitive and Selective Gas Sensor Using Heteroatom Doping Graphdiyne: A DFT Study.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001244

By:

Wu, Yang;
Chen, Xingzhu;
Weng, Kaiyi;
Arramel;
Jiang, Jizhou;
Ong, Wee‐Jun;
Zhang, Peng;
Zhao, Xiujian;
Li, Neng

Publication type:

Article

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001210

By:

Wang, Zhenxing;
Hemmetter, Andreas;
Uzlu, Burkay;
Saeed, Mohamed;
Hamed, Ahmed;
Kataria, Satender;
Negra, Renato;
Neumaier, Daniel;
Lemme, Max C.

Publication type:

Article

Direct Visualization and Effects of Atomic‐Scale Defects on the Optoelectronic Properties of Hexagonal Boron Nitride.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001177

By:

Ares, Pablo;
Santos, Hernán;
Lazić, Snežana;
Gibaja, Carlos;
Torres, Iñigo;
Pinilla, Sergio;
Gómez‐Herrero, Julio;
Meulen, Herko P.;
García‐González, Pablo;
Zamora, Félix

Publication type:

Article

Recent Advances in Two‐Dimensional Heterostructures: From Band Alignment Engineering to Advanced Optoelectronic Applications.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001174

By:

Sun, Xingxia;
Zhu, Chenguang;
Zhu, Xiaoli;
Yi, Jiali;
Liu, Yong;
Li, Dong;
Pan, Anlian

Publication type:

Article

Quantum Transport in Monolayer α‐CS Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001169

By:

Guo, Shiying;
Zhou, Wenhan;
Qu, Hengze;
Zhang, Shengli;
Liu, Wenqiang;
Liu, Gaoyu;
Xia, Xinyan;
Song, Xiufeng;
Zeng, Haibo

Publication type:

Article

Nondegenerate P‐Type In‐Doped SnS2 Monolayer Transistor.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001168

By:

Li, Zhaocheng;
Shu, Weining;
Li, Qiuqiu;
Xu, Weiting;
Zhang, Zhengwei;
Li, Jia;
Wang, Yiliu;
Liu, Yueyang;
Yang, Juehan;
Chen, Keqiu;
Duan, Xidong;
Wei, Zhongming;
Li, Bo

Publication type:

Article

Thickness and Spin Dependence of Raman Modes in Magnetic Layered Fe3GeTe2.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001159

By:

Kong, Xiangru;
Berlijn, Tom;
Liang, Liangbo

Publication type:

Article

Recent Advances in 2D Materials for Photodetectors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001125

By:

Jiang, Jian;
Wen, Yao;
Wang, Hao;
Yin, Lei;
Cheng, Ruiqing;
Liu, Chuansheng;
Feng, Liping;
He, Jun

Publication type:

Article

Volatile Organic Compound Sensors Based on 2D Materials.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001071

By:

Tan, Wee Chong;
Ang, Kah‐Wee

Publication type:

Article

Van Der Waals Heterostructures Based on Atomically‐Thin Superconductors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000987

By:

Boix‐Constant, Carla;
Mañas‐Valero, Samuel;
Córdoba, Rosa;
Coronado, Eugenio

Publication type:

Article

Progress and Perspective: MXene and MXene‐Based Nanomaterials for High‐Performance Energy Storage Devices.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000967

By:

Xu, Xiaodan;
Zhang, Yelong;
Sun, Hongyang;
Zhou, Jianwen;
Yang, Fan;
Li, Hao;
Chen, Hao;
Chen, Yucheng;
Liu, Zheng;
Qiu, Zhenping;
Wang, Da;
Ma, Lipo;
Wang, Jiawei;
Zeng, Qingguang;
Peng, Zhangquan

Publication type:

Article

High‐Performance Ultrapure Green CdSe/CdS Core/Crown Nanoplatelet Light‐Emitting Diodes by Suppressing Nonradiative Energy Transfer.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000965

By:

Wen, Zuoliang;
Liu, Pai;
Ma, Jingrui;
Jia, Siqi;
Xiao, Xiangtian;
Ding, Shihao;
Tang, Haodong;
Yang, Hongcheng;
Zhang, Chaojian;
Qu, Xiangwei;
Xu, Bing;
Wang, Kai;
Teo, Kie Leong;
Sun, Xiao Wei

Publication type:

Article

2D WS2 Based Asymmetric Schottky Photodetector with High Performance.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000964

By:

Gao, Wei;
Zhang, Shuai;
Zhang, Feng;
Wen, Peiting;
Zhang, Li;
Sun, Yiming;
Chen, Hongyu;
Zheng, Zhaoqiang;
Yang, Mengmeng;
Luo, Dongxiang;
Huo, Nengjie;
Li, Jingbo

Publication type:

Article

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr2S3 for Broadband Photodetection with High Responsivity.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000962

By:

Xie, Liu;
Wang, Jun;
Li, Jie;
Li, Chang;
Zhang, Yan;
Zhu, Benpeng;
Guo, Yuzheng;
Wang, Zhongchang;
Zhang, Kai

Publication type:

Article

Gold Nanocluster‐Modified Titanium Nitride for Ultrafast Photonics Applications.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000954

By:

Zhang, Bin;
Wang, Zhenhong;
Zhang, Chunxiang;
Wu, Hanwei;
Dang, Shanshan;
Du, Juan;
Song, Yufeng;
Zhang, Han;
Liu, Jun;
Nie, Guohui

Publication type:

Article

Core–Shell Single‐Nanowire Photodetector with Radial Carrier Transport: an Opportunity to Break the Responsivity‐Speed Trade‐off.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000920

By:

Cao, Guoyang;
Chen, Guoqing;
Li, Xiaofeng

Publication type:

Article

2D WS2: From Vapor Phase Synthesis to Device Applications.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000688

By:

Lan, Changyong;
Li, Chun;
Ho, Johnny C.;
Liu, Yong

Publication type:

Article

Highly Selective Non‐Covalent On‐Chip Functionalization of Layered Materials.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000564

By:

Tilmann, Rita;
Weiß, Corinna;
Cullen, Conor P.;
Peters, Lisanne;
Hartwig, Oliver;
Höltgen, Laura;
Stimpel‐Lindner, Tanja;
Knirsch, Kathrin C.;
McEvoy, Niall;
Hirsch, Andreas;
Duesberg, Georg S.

Publication type:

Article

Gate Stack Engineering in MoS2 Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202000395

By:

Sheng, Yaochen;
Chen, Xinyu;
Liao, Fuyou;
Wang, Yin;
Ma, Jingyi;
Deng, Jianan;
Guo, Zhongxun;
Bu, Sitong;
Shen, Hui;
Bai, Fuyu;
Huang, Daming;
Wang, Jianlu;
Hu, Weida;
Chen, Lin;
Zhu, Hao;
Sun, Qingqing;
Zhou, Peng;
Zhang, David Wei;
Wan, Jing;
Bao, Wenzhong

Publication type:

Article

Works matching IS 2199160X AND DT 2021 AND VI 7 AND IP 7

Core‐shell Single‐nanowire: Core–Shell Single‐Nanowire Photodetector with Radial Carrier Transport: an Opportunity to Break the Responsivity‐Speed Trade‐off (Adv. Electron. Mater. 7/2021).

Asymmetric Self‐driven Photodetector: 2D WS<sub>2</sub> Based Asymmetric Schottky Photodetector with High Performance (Adv. Electron. Mater. 7/2021).

Graphene Diodes: Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics (Adv. Electron. Mater. 7/2021).

Masthead: (Adv. Electron. Mater. 7/2021).

Optoelectronic RAM: Multifunctional Optoelectronic Random Access Memory Device Based on Surface‐Plasma‐Treated Inorganic Halide Perovskite (Adv. Electron. Mater. 7/2021).

Visible Light Communications: Co‐Evaporated Perovskite Light‐Emitting Transistor Operating at Room Temperature (Adv. Electron. Mater. 7/2021).

Frontiers in Electronic and Optoelectronic Devices Based on 2D Materials.

Co‐Evaporated Perovskite Light‐Emitting Transistor Operating at Room Temperature.

Simultaneous Enhancement of Actuation Strain and Mechanical Strength of Nanoporous Ni–Mn Actuators.

Multifunctional Optoelectronic Random Access Memory Device Based on Surface‐Plasma‐Treated Inorganic Halide Perovskite.

Magnetic‐Sensitive Crack Sensor with Ultrahigh Sensitivity at Room Temperature by Depositing Graphene Nanosheets upon a Flexible Magnetic Film.

1/f Noise Characterization of Bilayer MoS<sub>2</sub> Field‐Effect Transistors on Paper with Inkjet‐Printed Contacts and hBN Dielectrics.

A Wearable Sustainable Moisture‐Induced Electricity Generator Based on rGO/GO/rGO Sandwich‐Like Structural Film.

Highly Sensitive Capacitive Pressure Sensor Based on a Micropyramid Array for Health and Motion Monitoring.

Simultaneously Improved Thermoelectric and Mechanical Properties Driven by MgB<sub>2</sub> Doping in Bi<sub>0.4</sub>Sb<sub>1.6</sub>Te<sub>3</sub> Based Alloys.

Processable Thiophene‐Based Polymers with Tailored Electronic Properties and their Application in Solid‐State Electrochromic Devices Using Nanoparticle Films.

Inkjet Printed Circuits with 2D Semiconductor Inks for High‐Performance Electronics.

Highly Sensitive and Selective Gas Sensor Using Heteroatom Doping Graphdiyne: A DFT Study.

Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics.

Direct Visualization and Effects of Atomic‐Scale Defects on the Optoelectronic Properties of Hexagonal Boron Nitride.

Recent Advances in Two‐Dimensional Heterostructures: From Band Alignment Engineering to Advanced Optoelectronic Applications.

Quantum Transport in Monolayer α‐CS Field‐Effect Transistors.

Nondegenerate P‐Type In‐Doped SnS<sub>2</sub> Monolayer Transistor.

Thickness and Spin Dependence of Raman Modes in Magnetic Layered Fe<sub>3</sub>GeTe<sub>2</sub>.

Recent Advances in 2D Materials for Photodetectors.

Volatile Organic Compound Sensors Based on 2D Materials.

Van Der Waals Heterostructures Based on Atomically‐Thin Superconductors.

Progress and Perspective: MXene and MXene‐Based Nanomaterials for High‐Performance Energy Storage Devices.

High‐Performance Ultrapure Green CdSe/CdS Core/Crown Nanoplatelet Light‐Emitting Diodes by Suppressing Nonradiative Energy Transfer.

2D WS<sub>2</sub> Based Asymmetric Schottky Photodetector with High Performance.

An Atomically Thin Air‐Stable Narrow‐Gap Semiconductor Cr<sub>2</sub>S<sub>3</sub> for Broadband Photodetection with High Responsivity.

Gold Nanocluster‐Modified Titanium Nitride for Ultrafast Photonics Applications.

Core–Shell Single‐Nanowire Photodetector with Radial Carrier Transport: an Opportunity to Break the Responsivity‐Speed Trade‐off.

2D WS<sub>2</sub>: From Vapor Phase Synthesis to Device Applications.

Highly Selective Non‐Covalent On‐Chip Functionalization of Layered Materials.

Gate Stack Engineering in MoS<sub>2</sub> Field‐Effect Transistor for Reduced Channel Doping and Hysteresis Effect.