Works matching IS 2199160X AND DT 2021 AND VI 7 AND IP 5

Results: 39

Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202170015

By:

Shih, Yu‐Chuan;
Lee, Ling;
Liang, Kai‐De;
Manikandan, Arumugam;
Liu, Wen‐Wu;
Chen, Yu‐Ze;
Chang, Mu‐Tung;
Wang, Zhiming M.;
Chueh, Yu‐Lun

Publication type:

Article

Masthead: (Adv. Electron. Mater. 5/2021).

Published in:: Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202170014
Publication type:: Article

Data Storage: Functional Applications of Future Data Storage Devices (Adv. Electron. Mater. 5/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202170016

By:

Yang, Jia‐Qin;
Zhou, Ye;
Han, Su‐Ting

Publication type:

Article

Wireless Sensors: Wireless‐Powered VOCs Sensor Based on Energy‐Harvesting Metamaterial (Adv. Electron. Mater. 5/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202170013

By:

Lee, Wonwoo;
Park, Heejoo;
Kim, So Young;
Park, Sung‐Min;
Kim, Do Hwan;
Lee, Hojin

Publication type:

Article

In Situ Encryption: Cryptographic Key Generation and In Situ Encryption in One‐Transistor‐One‐Resistor Memristors for Hardware Security (Adv. Electron. Mater. 5/2021).

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202170012

By:

Yang, Ling;
Cheng, Long;
Li, Yi;
Li, Haoyang;
Li, Jiancong;
Chang, Ting‐Chang;
Miao, Xiangshui

Publication type:

Article

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100164

By:

Zhang, Liwei;
Mai, Xianliang;
Gu, Rongchuan;
Liu, Long;
Xiong, Changying;
Yang, Zhe;
Tong, Hao;
Cheng, Xiaomin;
Xu, Ming;
Zhou, Peng;
Miao, Xiangshui

Publication type:

Article

Direct Measurement of Transient Charging and Dipole Alignment Speed in Ferroelectric Hf0.5Zr0.5O2 Gate Dielectric Using Graphene FETs.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100145

By:

Hwang, Hyeon Jun;
Lee, Sang Kyung;
Kim, Seung Mo;
Lee, Byoung Hun

Publication type:

Article

Polarization‐Modulated Photovoltaic Effect at the Morphotropic Phase Boundary in Ferroelectric Ceramics.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100144

By:

Wu, Liyan;
Burger, Aaron M.;
Bennett‐Jackson, Andrew L.;
Spanier, Jonathan E.;
Davies, Peter K.

Publication type:

Article

All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100142

By:

Nikam, Revannath Dnyandeo;
Kwak, Myonghoon;
Hwang, Hyunsang

Publication type:

Article

High‐Efficiency Microwave Attenuation of Magnetic Carbon Nanoparticle‐Decorated Tubular Carbon Nanofibers Composites at an Ultralow Filling Content.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100121

By:

Kang, Shuai;
Qiao, Shiya;
Cao, Yutong;
Hu, Zuming;
Yu, Junrong;
Wang, Yan

Publication type:

Article

A Single Transistor‐Based Threshold Switch for a Bio‐Inspired Reconfigurable Threshold Logic.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100117

By:

Han, Joon‐Kyu;
Lee, Mun‐Woo;
Yu, Ji‐Man;
Choi, Yang‐Kyu

Publication type:

Article

Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100101

By:

Sistani, Masiar;
Böckle, Raphael;
Wind, Lukas;
Eysin, Kilian;
Maeder, Xavier;
Schweizer, Peter;
Michler, Johann;
Lugstein, Alois;
Weber, Walter M.

Publication type:

Article

Flexible and Transparent Aluminum‐Nitride‐Based Surface‐Acoustic‐Wave Device on Polymeric Polyethylene Naphthalate.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100084

By:

Lamanna, Leonardo;
Rizzi, Francesco;
Guido, Francesco;
Algieri, Luciana;
Marras, Sergio;
Mastronardi, Vincenzo Mariano;
Qualtieri, Antonio;
De Vittorio, Massimo

Publication type:

Article

2D MoS2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100074

By:

Widiapradja, Livia Janice;
Nam, Taewook;
Jeong, Yeonsu;
Jin, Hye‐Jin;
Lee, Yangjin;
Kim, Kwanpyo;
Lee, Sangyoon;
Kim, Hyungjun;
Bae, Heesun;
Im, Seongil

Publication type:

Article

Spinterfaces Manipulate Large Magnetic Field Effects in 3D and Quasi‐2D Organic–Inorganic Hybrid Perovskites.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100026

By:

Pan, Ruiheng;
Wang, Kai;
Li, Yang;
Yu, Haomiao;
Li, Jinpeng;
Xu, Ling

Publication type:

Article

CsFAMAPbIBr Photoelectric Memristor Based on Ion‐Migration Induced Memristive Behavior.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100014

By:

Wang, Shaoxi;
Dong, Xiangqi;
Xiong, Yuxuan;
Sha, Jian;
Cao, Yunguo;
Wu, Yupan;
Li, Wei;
Yin, Yue;
Wang, Yucheng

Publication type:

Article

Effectively Enhanced Broadband Phototransistors Based on Multilayer WSe2/Pentacene.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202100003

By:

Im, Healin;
Kim, Sunkook

Publication type:

Article

Boosting the Thermoelectric Properties of PEDOT:PSS via Low‐Impact Deposition of Tin Oxide Nanoparticles.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001284

By:

Dong, Jingjin;
Gerlach, Dominic;
Koutsogiannis, Panagiotis;
Rudolf, Petra;
Portale, Giuseppe

Publication type:

Article

Non‐Local Electron‐Phonon Interaction in Naphthalene Diimide Derivatives, its Experimental Probe and Impact on Charge‐Carrier Mobility.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001281

By:

Vener, Mikhail V.;
Parashchuk, Olga D.;
Kharlanov, Oleg G.;
Maslennikov, Dmitry R.;
Dominskiy, Dmitry I.;
Yu. Chernyshov, Ivan;
Yu. Paraschuk, Dmitry;
Yu. Sosorev, Andrey

Publication type:

Article

Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001258

By:

Ahn, Minhyung;
Park, Yongmo;
Lee, Seung Hwan;
Chae, Sieun;
Lee, Jihang;
Heron, John T.;
Kioupakis, Emmanouil;
Lu, Wei D.;
Phillips, Jamie D.

Publication type:

Article

Phase‐Transition‐Induced VO2 Thin Film IR Photodetector and Threshold Switching Selector for Optical Neural Network Applications.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001254

By:

Zhou, Xi;
Zhao, Liang;
Zhen, Weili;
Lin, Yinyue;
Wang, Chunlin;
Pan, Tianyu;
Li, Le;
Du, Guanlin;
Lu, Linfeng;
Cao, Xun;
Li, Dongdong

Publication type:

Article

Wireless‐Powered VOCs Sensor Based on Energy‐Harvesting Metamaterial.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001240

By:

Lee, Wonwoo;
Park, Heejoo;
Kim, So Young;
Park, Sung‐Min;
Kim, Do Hwan;
Lee, Hojin

Publication type:

Article

Using Light for Better Programming of Ferroelectric Devices: Optoelectronic MoS2‐Pb(Zr,Ti)O3 Memories with Improved On–Off Ratios.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001223

By:

Lipatov, Alexey;
Vorobeva, Nataliia S.;
Li, Tao;
Gruverman, Alexei;
Sinitskii, Alexander

Publication type:

Article

Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001216

By:

Park, Jin‐Hyeok;
Seok, Hae‐Jun;
Kim, Chan‐Hwi;
Jung, Sung Hyeon;
Cho, Hyung Koun;
Kim, Han‐Ki

Publication type:

Article

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001212

By:

Ngo, Tien Dat;
Yang, Zheng;
Lee, Myeongjin;
Ali, Fida;
Moon, Inyong;
Kim, Dong Gyu;
Taniguchi, Takashi;
Watanabe, Kenji;
Lee, Kang‐Yoon;
Yoo, Won Jong

Publication type:

Article

Flexible and Transparent Electrodes of Cu2−XSe with Charge Transport via Direct Tunneling Effect.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001189

By:

Silva, Silésia F. C.;
Zanatta, Bruno S.;
Rabelo, Adriano C.;
Bottecchia, Otávio L.;
Tozoni, José R.;
Oliveira Jr, Osvaldo N.;
Marletta, Alexandre

Publication type:

Article

Cryptographic Key Generation and In Situ Encryption in One‐Transistor‐One‐Resistor Memristors for Hardware Security.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001182

By:

Yang, Ling;
Cheng, Long;
Li, Yi;
Li, Haoyang;
Li, Jiancong;
Chang, Ting‐Chang;
Miao, Xiangshui

Publication type:

Article

Functional Applications of Future Data Storage Devices.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001181

By:

Yang, Jia‐Qin;
Zhou, Ye;
Han, Su‐Ting

Publication type:

Article

Metal‐Based Flexible Transparent Electrodes: Challenges and Recent Advances.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001121

By:

Lu, Xi;
Zhang, Yaokang;
Zheng, Zijian

Publication type:

Article

Green Fabrication of (6,5)Carbon Nanotube/Protein Transistor Endowed with Specific Recognition.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001114

By:

Berto, Marcello;
Di Giosia, Matteo;
Giordani, Martina;
Sensi, Matteo;
Valle, Francesco;
Alessandrini, Andrea;
Menozzi, Claudia;
Cantelli, Andrea;
Gazzadi, Gian Carlo;
Zerbetto, Francesco;
Calvaresi, Matteo;
Biscarini, Fabio;
Bortolotti, Carlo Augusto

Publication type:

Article

Gate‐Tunable Photodiodes Based on Mixed‐Dimensional Te/MoTe2 Van der Waals Heterojunctions.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001066

By:

Zhao, Dongyang;
Chen, Yan;
Jiang, Wei;
Wang, Xudong;
Liu, Jingjing;
Huang, Xinning;
Han, Sancan;
Lin, Tie;
Shen, Hong;
Wang, Xianying;
Hu, Weida;
Meng, Xiangjian;
Chu, Junhao;
Wang, Jianlu

Publication type:

Article

How to Reduce Charge Recombination in Organic Solar Cells: There are Still Lessons to Learn from P3HT:PCBM.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001056

By:

Wilken, Sebastian;
Scheunemann, Dorothea;
Dahlström, Staffan;
Nyman, Mathias;
Parisi, Jürgen;
Österbacka, Ronald

Publication type:

Article

Investigation of the Determining Factors for the "Mobility Boost" in High‐k‐Gated Transparent Oxide Semiconductor Thin‐Film Transistors.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001037

By:

Sun, Yuhang;
Kim, Junkyu;
Chatterjee, Neel;
Swisher, Sarah L.

Publication type:

Article

Boron Nitride Nanotube Coatings for Thermal Management of Printed Silver Inks on Temperature Sensitive Substrates.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202001035

By:

Wagner, Kaitlin;
Paquet, Chantal;
Martinez‐Rubi, Yadienka;
Genest, Marc;
Guan, Jingwen;
Sampson, Kathleen L.;
Kim, Keun Su;
Kell, Arnold J.;
Malenfant, Patrick R. L.;
Lessard, Benoît H.

Publication type:

Article

A Poly‐Crystalline Silicon Nanowire Transistor with Independently Controlled Double‐Gate for Physically Unclonable Function by Multi‐States and Self‐Destruction.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000989

By:

Yu, Ji‐Man;
Yun, Gyeong‐Jun;
Kim, Moon‐Seok;
Han, Joon‐Kyu;
Kim, Da‐Jin;
Choi, Yang‐Kyu

Publication type:

Article

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000955

By:

Yi, Chujun;
Chen, Yibo;
Kang, Zhe;
Ma, Yanan;
Yue, Yang;
Liu, Weijie;
Zhu, Meng;
Gao, Yihua

Publication type:

Article

Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000906

By:

Hong, Sungjae;
Kim, Kang Lib;
Cho, Yongjae;
Cho, Hyunmin;
Park, Ji Hoon;
Park, Cheolmin;
Im, Seongil

Publication type:

Article

Fabrication of Oriented n‐Type Thermoelectric Polymers by Polarity Switching in a DPP‐Based Donor–Acceptor Copolymer Doped with FeCl3.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000880

By:

Zeng, Huiyan;
Mohammed, Mohammed;
Untilova, Viktoriia;
Boyron, Olivier;
Berton, Nicolas;
Limelette, Patrice;
Schmaltz, Bruno;
Brinkmann, Martin

Publication type:

Article

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 5, p. 1, doi. 10.1002/aelm.202000252

By:

Shih, Yu‐Chuan;
Lee, Ling;
Liang, Kai‐De;
Manikandan, Arumugam;
Liu, Wen‐Wu;
Chen, Yu‐Ze;
Chang, Mu‐Tung;
Wang, Zhiming M.;
Chueh, Yu‐Lun

Publication type:

Article

Works matching IS 2199160X AND DT 2021 AND VI 7 AND IP 5

Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021).

Masthead: (Adv. Electron. Mater. 5/2021).

Data Storage: Functional Applications of Future Data Storage Devices (Adv. Electron. Mater. 5/2021).

Wireless Sensors: Wireless‐Powered VOCs Sensor Based on Energy‐Harvesting Metamaterial (Adv. Electron. Mater. 5/2021).

In Situ Encryption: Cryptographic Key Generation and In Situ Encryption in One‐Transistor‐One‐Resistor Memristors for Hardware Security (Adv. Electron. Mater. 5/2021).

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory.

Direct Measurement of Transient Charging and Dipole Alignment Speed in Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Gate Dielectric Using Graphene FETs.

Polarization‐Modulated Photovoltaic Effect at the Morphotropic Phase Boundary in Ferroelectric Ceramics.

All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing.

High‐Efficiency Microwave Attenuation of Magnetic Carbon Nanoparticle‐Decorated Tubular Carbon Nanofibers Composites at an Ultralow Filling Content.

A Single Transistor‐Based Threshold Switch for a Bio‐Inspired Reconfigurable Threshold Logic.

Polycrystalline Ge Nanosheets Embedded in Metal‐Semiconductor Heterostructures Enabling Wafer‐Scale 3D Integration of Ge Nanodevices with Self‐Aligned Al Contacts.

Flexible and Transparent Aluminum‐Nitride‐Based Surface‐Acoustic‐Wave Device on Polymeric Polyethylene Naphthalate.

2D MoS<sub>2</sub> Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO<sub>2</sub>/HfO<sub>2</sub> Dielectrics and Oxide Interface Traps.

Spinterfaces Manipulate Large Magnetic Field Effects in 3D and Quasi‐2D Organic–Inorganic Hybrid Perovskites.

CsFAMAPbIBr Photoelectric Memristor Based on Ion‐Migration Induced Memristive Behavior.

Effectively Enhanced Broadband Phototransistors Based on Multilayer WSe<sub>2</sub>/Pentacene.

Boosting the Thermoelectric Properties of PEDOT:PSS via Low‐Impact Deposition of Tin Oxide Nanoparticles.

Non‐Local Electron‐Phonon Interaction in Naphthalene Diimide Derivatives, its Experimental Probe and Impact on Charge‐Carrier Mobility.

Memristors Based on (Zr, Hf, Nb, Ta, Mo, W) High‐Entropy Oxides.

Phase‐Transition‐Induced VO<sub>2</sub> Thin Film IR Photodetector and Threshold Switching Selector for Optical Neural Network Applications.

Wireless‐Powered VOCs Sensor Based on Energy‐Harvesting Metamaterial.

Using Light for Better Programming of Ferroelectric Devices: Optoelectronic MoS<sub>2</sub>‐Pb(Zr,Ti)O<sub>3</sub> Memories with Improved On–Off Ratios.

Compositional Engineering of Hf‐Doped InZnSnO Films for High‐Performance and Stability Amorphous Oxide Semiconductor Thin Film Transistors.

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts.

Flexible and Transparent Electrodes of Cu<sub>2−</sub><sub>X</sub>Se with Charge Transport via Direct Tunneling Effect.

Cryptographic Key Generation and In Situ Encryption in One‐Transistor‐One‐Resistor Memristors for Hardware Security.

Functional Applications of Future Data Storage Devices.

Metal‐Based Flexible Transparent Electrodes: Challenges and Recent Advances.

Green Fabrication of (6,5)Carbon Nanotube/Protein Transistor Endowed with Specific Recognition.

Gate‐Tunable Photodiodes Based on Mixed‐Dimensional Te/MoTe<sub>2</sub> Van der Waals Heterojunctions.

How to Reduce Charge Recombination in Organic Solar Cells: There are Still Lessons to Learn from P3HT:PCBM.

Investigation of the Determining Factors for the "Mobility Boost" in High‐k‐Gated Transparent Oxide Semiconductor Thin‐Film Transistors.

Boron Nitride Nanotube Coatings for Thermal Management of Printed Silver Inks on Temperature Sensitive Substrates.

A Poly‐Crystalline Silicon Nanowire Transistor with Independently Controlled Double‐Gate for Physically Unclonable Function by Multi‐States and Self‐Destruction.

MXene‐GaN van der Waals Heterostructures for High‐Speed Self‐Driven Photodetectors and Light‐Emitting Diodes.

Complementary Type Ferroelectric Memory Transistor Circuits with P‐ and N‐Channel MoTe2.

Fabrication of Oriented n‐Type Thermoelectric Polymers by Polarity Switching in a DPP‐Based Donor–Acceptor Copolymer Doped with FeCl<sub>3</sub>.

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire.