Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 6

Results: 32

Masthead: (Adv. Electron. Mater. 6/2020).

Published in:: Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202070029
Publication type:: Article

2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface (Adv. Electron. Mater. 6/2020).

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901286

By:

Moon, Taehwan;
Lee, Hyun Jae;
Hyun, Seung Dam;
Kim, Baek Su;
Kim, Ho Hyun;
Hwang, Cheol Seong

Publication type:

Article

Space‐Confined Growth of 2D InI Showing High Sensitivity in Photodetection.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000284

By:

Suleiman, Abdulsalam Aji;
Huang, Pu;
Jin, Bao;
Jiang, Jizhou;
Zhang, Xiuwen;
Zhou, Xing;
Zhai, Tianyou

Publication type:

Article

In Situ Dynamic Manipulation of Graphene Strain Sensor with Drastically Sensing Performance Enhancement.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000269

By:

Luo, Zewei;
Li, Xinming;
Li, Quanling;
Tian, Xiyue;
Fan, Tianyi;
Wang, Chaolun;
Wu, Xing;
Shen, Guozhen

Publication type:

Article

Latent Photoinduced Oxygen Doping Revealed from Emission Saturation of Aggregated Domains in Conjugated Polymer Nanofibers.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000265

By:

Walwark, David J.;
Martin, Thomas P.;
Grey, John K.

Publication type:

Article

F4‐TCNQ as an Additive to Impart Stretchable Semiconductors with High Mobility and Stability.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000251

By:

Mun, Jaewan;
Kang, Jiheong;
Zheng, Yu;
Luo, Shaochuan;
Wu, Yilei;
Gong, Huaxin;
Lai, Jian‐Cheng;
Wu, Hung‐Chin;
Xue, Gi;
Tok, Jeffrey B.‐H.;
Bao, Zhenan

Publication type:

Article

Semiconducting Small Molecules as Active Materials for p‐Type Accumulation Mode Organic Electrochemical Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000215

By:

Parr, Zachary S.;
Rashid, Reem B.;
Paulsen, Bryan D.;
Poggi, Benjamin;
Tan, Ellasia;
Freeley, Mark;
Palma, Matteo;
Abrahams, Isaac;
Rivnay, Jonathan;
Nielsen, Christian B.

Publication type:

Article

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000209

By:

Maikap, Siddheswar;
Banerjee, Writam

Publication type:

Article

High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000189

By:

Kim, Yeon‐Ju;
Kang, Minji;
Lee, Min‐Hye;
Kang, Ji‐Sue;
Kim, Dong‐Yu

Publication type:

Article

Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000184

By:

Wang, Changan;
Chang, Ching‐Hao;
Herklotz, Andreas;
Chen, Chao;
Ganss, Fabian;
Kentsch, Ulrich;
Chen, Deyang;
Gao, Xingsen;
Zeng, Yu‐Jia;
Hellwig, Olav;
Helm, Manfred;
Gemming, Sibylle;
Chu, Ying‐Hao;
Zhou, Shengqiang

Publication type:

Article

Improved Photoelectric Performance of UV Photodetector Based on ZnO Nanoparticle‐Decorated BiOCl Nanosheet Arrays onto PDMS Substrate: The Heterojunction and Ti3C2Tx MXene Conduction Layer.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000168

By:

Ouyang, Weixin;
Chen, Jiaxin;
He, Jr‐Hau;
Fang, Xiaosheng

Publication type:

Article

Cross‐Point Arrays with Low‐Power ITO‐HfO2 Resistive Memory Cells Integrated on Vertical III‐V Nanowires.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000154

By:

Persson, Karl‐Magnus;
Ram, Mamidala Saketh;
Kilpi, Olli‐Pekka;
Borg, Mattias;
Wernersson, Lars‐Erik

Publication type:

Article

Few‐Layer Organic Crystalline van der Waals Heterojunctions for Ultrafast UV Phototransistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000062

By:

Guo, Jianhang;
Jiang, Sai;
Pei, Mengjiao;
Xiao, Yanling;
Zhang, Bowen;
Wang, Qijing;
Zhu, Ying;
Wang, Hengyuan;
Jie, Jiansheng;
Wang, Xinran;
Shi, Yi;
Li, Yun

Publication type:

Article

A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000057

By:

Chen, Li;
Wang, Lin;
Peng, Yue;
Feng, Xuewei;
Sarkar, Soumya;
Li, Sifan;
Li, Bochang;
Liu, Liang;
Han, Kaizhen;
Gong, Xiao;
Chen, Jingsheng;
Liu, Yan;
Han, Genquan;
Ang, Kah‐Wee

Publication type:

Article

Carbazole Derivatized n‐Alkyl Methacrylate Polymeric Memristors as Flexible Synaptic Substitutes.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000042

By:

McFarlane, Tucker;
Bandera, Yuriy;
Grant, Benjamin;
Zdyrko, Bogdan;
Foulger, Stephen H.;
Vilčáková, Jarmila;
Sáha, Petr;
Pfleger, Jiří

Publication type:

Article

Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization‐Based Structure Searches.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000119

By:

Wang, Xue;
Faizan, Muhammad;
Na, Guangren;
He, Xin;
Fu, YuHao;
Zhang, Lijun

Publication type:

Article

Achieving High Alignment of Conjugated Polymers by Controlled Dip‐Coating.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000080

By:

Li, Qi‐Yi;
Yao, Ze‐Fan;
Lu, Yang;
Zhang, Song;
Ahmad, Zachary;
Wang, Jie‐Yu;
Gu, Xiaodan;
Pei, Jian

Publication type:

Article

Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000066

By:

Huang, Wei‐Chen;
Zheng, Hao‐Xuan;
Chen, Po‐Hsun;
Chang, Ting‐Chang;
Tan, Yung‐Fang;
Lin, Shih‐Kai;
Zhang, Yong‐Ci;
Jin, Fu‐Yuan;
Wu, Chung‐Wei;
Yeh, Yu‐Hsuan;
Chou, Sheng‐Yao;
Huang, Hui‐Chun;
Chen, Yan‐Wen;
Sze, Simon M.

Publication type:

Article

Robust and Transient Write‐Once‐Read‐Many‐Times Memory Device Based on Hybrid Perovskite Film with Novel Room Temperature Molten Salt Solvent.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000109

By:

Li, Bixin;
Yin, Hao;
Xia, Fei;
Sun, Bo;
Zhang, Shiyang;
Xia, Yingdong;
Chen, Yonghua;
Huang, Wei

Publication type:

Article

Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr0.2Ti0.8O3/Co/Pt Heterostructure.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000102

By:

Ren, Zengyao;
Wang, Mengxi;
Liu, Pengfei;
Liu, Qi;
Wang, Kaiyou;
Jakob, Gehard;
Chen, Jikun;
Meng, Kangkang;
Xu, Xiaoguang;
Miao, Jun;
Jiang, Yong

Publication type:

Article

Realizing Excellent n‐ and p‐Type Niobium‐Based Half‐Heusler Compounds Based on Thermoelectric Properties and High‐Temperature Stability.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000083

By:

Silpawilawan, Wanthana;
Tanuslip, Sora‐at;
Chetty, Raju;
Ohta, Michihiro;
Ohishi, Yuji;
Muta, Hiroaki;
Kurosaki, Ken

Publication type:

Article

The Origin of Photoinduced Capacitance in Perovskite Solar Cells: Beyond Ionic‐to‐Electronic Current Amplification.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000030

By:

Choi, Wookjin;
Song, Sung Won;
Han, Se Gyo;
Cho, Kilwon

Publication type:

Article

Low‐Voltage Heterojunction Metal Oxide Transistors via Rapid Photonic Processing.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000028

By:

Yarali, Emre;
Faber, Hendrik;
Yengel, Emre;
Seitkhan, Akmaral;
Loganathan, Kalaivanan;
Harrison, George T.;
Adilbekova, Begimai;
Lin, Yuanbao;
Ma, Chun;
Firdaus, Yuliar;
Anthopoulos, Thomas D.

Publication type:

Article

Enhanced Charge Transfer and Responsivity in Hybrid Quantum Dot/Graphene Photodetectors Using ZnO as Intermediate Electron‐Collecting Layer.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000014

By:

Ahn, Seungbae;
Chen, Wenjun;
Moreno‐Gonzalez, Miguel A.;
Lockett, Malcolm;
Wang, Jiaying;
Vazquez‐Mena, Oscar

Publication type:

Article

Thiazolothiazole‐Based Quinoidal Compounds for High‐Performance n‐Channel Organic Field‐Effect Transistors with Low‐Cost Metal Electrodes.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901443

By:

Feng, Yan;
Qiao, Xiaolan;
Ouyang, Guangcheng;
Liu, Guohua;
Li, Hongxiang

Publication type:

Article

Solution‐Processable Transparent Organic Molecular Nanoadhesives for Exceptionally Durable Nanowire Electrodes.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901440

By:

Bok, Shingyu;
Ahn, Kwangguk;
Oh, Hwisu;
Kwon, Nayoung;
Lee, Jung Heon;
Nam, Jaewook;
Lim, Byungkwon

Publication type:

Article

Network Structural CNTs Penetrate Porous Carbon Support for Phase‐Change Materials with Enhanced Electro‐Thermal Performance.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901428

By:

Li, Ang;
Dong, Cheng;
Dong, Wenjun;
Yuan, Fugen;
Gao, Hongyi;
Chen, Xiao;
Chen, Xiao‐Bo;
Wang, Ge

Publication type:

Article

Interlayers for Improved Hole Injection in Organic Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901352

By:

Zhang, Ke;
Kotadiya, Naresh B.;
Wang, Xiao‐Ye;
Wetzelaer, Gert‐Jan A. H.;
Marszalek, Tomasz;
Pisula, Wojciech;
Blom, Paul W. M.

Publication type:

Article

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901286

By:

Moon, Taehwan;
Lee, Hyun Jae;
Hyun, Seung Dam;
Kim, Baek Su;
Kim, Ho Hyun;
Hwang, Cheol Seong

Publication type:

Article

Capacitive‐Type Two‐Axis Accelerometer with Liquid‐Type Proof Mass.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901265

By:

Won, Dong‐Joon;
Huh, Myoung;
Lee, Sangmin;
Park, Usung;
Yoo, Dongwoo;
Kim, Joonwon

Publication type:

Article

Device Model for Methylammonium Lead Iodide Perovskite With Experimentally Validated Ion Dynamics.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201900935

By:

Sajedi Alvar, Mohammad;
Blom, Paul W.M.;
Wetzelaer, Gert‐Jan A. H.

Publication type:

Article

Control of Unipolar/Ambipolar Transport in Single‐Molecule Transistors through Interface Engineering.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901237

By:

Xin, Na;
Kong, Xianghua;
Zhang, Yu‐Peng;
Jia, Chuancheng;
Liu, Lei;
Gong, Yao;
Zhang, Weining;
Wang, Shuopei;
Zhang, Guangyu;
Zhang, Hao‐Li;
Guo, Hong;
Guo, Xuefeng

Publication type:

Article

Works matching IS 2199160X AND DT 2020 AND VI 6 AND IP 6

Masthead: (Adv. Electron. Mater. 6/2020).

2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub> Interface (Adv. Electron. Mater. 6/2020).

Space‐Confined Growth of 2D InI Showing High Sensitivity in Photodetection.

In Situ Dynamic Manipulation of Graphene Strain Sensor with Drastically Sensing Performance Enhancement.

Latent Photoinduced Oxygen Doping Revealed from Emission Saturation of Aggregated Domains in Conjugated Polymer Nanofibers.

F4‐TCNQ as an Additive to Impart Stretchable Semiconductors with High Mobility and Stability.

Semiconducting Small Molecules as Active Materials for p‐Type Accumulation Mode Organic Electrochemical Transistors.

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices.

High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret.

Topological Hall Effect in Single Thick SrRuO<sub>3</sub> Layers Induced by Defect Engineering.

Improved Photoelectric Performance of UV Photodetector Based on ZnO Nanoparticle‐Decorated BiOCl Nanosheet Arrays onto PDMS Substrate: The Heterojunction and Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene Conduction Layer.

Cross‐Point Arrays with Low‐Power ITO‐HfO<sub>2</sub> Resistive Memory Cells Integrated on Vertical III‐V Nanowires.

Few‐Layer Organic Crystalline van der Waals Heterojunctions for Ultrafast UV Phototransistors.

A van der Waals Synaptic Transistor Based on Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> and 2D Tungsten Disulfide.

Carbazole Derivatized n‐Alkyl Methacrylate Polymeric Memristors as Flexible Synaptic Substitutes.

Discovery of New Polymorphs of Gallium Oxides with Particle Swarm Optimization‐Based Structure Searches.

Achieving High Alignment of Conjugated Polymers by Controlled Dip‐Coating.

Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.

Robust and Transient Write‐Once‐Read‐Many‐Times Memory Device Based on Hybrid Perovskite Film with Novel Room Temperature Molten Salt Solvent.

Spin Logical and Memory Device Based on the Nonvolatile Ferroelectric Control of the Perpendicular Magnetic Anisotropy in PbZr<sub>0.2</sub>Ti<sub>0.8</sub>O<sub>3</sub>/Co/Pt Heterostructure.

Realizing Excellent n‐ and p‐Type Niobium‐Based Half‐Heusler Compounds Based on Thermoelectric Properties and High‐Temperature Stability.

The Origin of Photoinduced Capacitance in Perovskite Solar Cells: Beyond Ionic‐to‐Electronic Current Amplification.

Low‐Voltage Heterojunction Metal Oxide Transistors via Rapid Photonic Processing.

Enhanced Charge Transfer and Responsivity in Hybrid Quantum Dot/Graphene Photodetectors Using ZnO as Intermediate Electron‐Collecting Layer.

Thiazolothiazole‐Based Quinoidal Compounds for High‐Performance n‐Channel Organic Field‐Effect Transistors with Low‐Cost Metal Electrodes.

Solution‐Processable Transparent Organic Molecular Nanoadhesives for Exceptionally Durable Nanowire Electrodes.

Network Structural CNTs Penetrate Porous Carbon Support for Phase‐Change Materials with Enhanced Electro‐Thermal Performance.

Interlayers for Improved Hole Injection in Organic Field‐Effect Transistors.

Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al<sub>2</sub>O<sub>3</sub>/SrTiO<sub>3</sub> Interface.

Capacitive‐Type Two‐Axis Accelerometer with Liquid‐Type Proof Mass.

Device Model for Methylammonium Lead Iodide Perovskite With Experimentally Validated Ion Dynamics.

Control of Unipolar/Ambipolar Transport in Single‐Molecule Transistors through Interface Engineering.