Works matching DE "REFLECTION high energy electron diffraction"

Results: 48

Structure of AuSi nanoparticles on Si(111) from reflection high-energy electron diffraction and scanning tunneling microscopy.

Published in:

European Physical Journal D (EPJ D), 2011, v. 63, n. 2, p. 225, doi. 10.1140/epjd/e2011-10604-8

By:

Bartling, S.;
Barke, I.;
Sell, K.;
Polei, S.;
Oeynhausen, V.;
Meiwes-Broer, K.

Publication type:

Article

A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 835, doi. 10.1002/pssr.201307255

By:

Hestroffer, Karine;
Daudin, Bruno

Publication type:

Article

Epitaxial Growth of Ru and Pt on Pt(111) and Ru(0001), Respectively: A Combined AES and RHEED Study.

Published in:

Journal of Nanotechnology, 2010, p. 1, doi. 10.1155/2010/487193

By:

Zei, M. S.

Publication type:

Article

Band structure of In chains on Si(335)--Au.

Published in:

Materials Science (0137-1339), 2008, v. 26, n. 1, p. 55

By:

Skrobas, K.;
Zdyb, R.;
Kisiel, M.;
Jałochowski, M.

Publication type:

Article

Theoretical analysis of reflection high-energy electron diffraction (RHEED) and reflection high-energy positron diffraction (RHEPD) intensity oscillations expected for the perfect layer-by-layer growth.

Published in:

Acta Crystallographica. Section A, Foundations & Advances, 2015, v. 71, n. 5, p. 513, doi. 10.1107/S2053273315010608

By:

Mitura, Zbigniew

Publication type:

Article

Remark to the Intensity Measurement of RHEED.

Published in:

Instruments & Experimental Techniques, 2005, v. 48, n. 5, p. 679, doi. 10.1007/s10786-005-0122-y

By:

Nemcsics, Á.;
Olde, J.;
Geyer, M.;
Reshöft, K.

Publication type:

Article

Growth mechanism, microstructure and transport properties of Sr1− x La x CuO2 ( x=0.10−0.15) thin films.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 93, n. 3, p. 779, doi. 10.1007/s00339-008-4736-3

By:

Leca, V.;
Vişănescu, G.;
Back, C.;
Kleiner, R.;
Koelle, D.

Publication type:

Article

Sub-unit cell layer-by-layer growth of Fe[sub 3]O[sub 4], MgO, and Sr[sub 2]RuO[sub 4] thin films.

Published in:

Applied Physics A: Materials Science & Processing, 2003, v. 77, n. 5, p. 619, doi. 10.1007/s00339-003-2105-9

By:

Reisinger, D.;
Blass, B.;
Klein, J.;
Philipp, J.B.;
Schonecke, M.;
Erb, A.;
Alff, L.;
Gross, R.

Publication type:

Article

Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces.

Published in:

Semiconductors, 2011, v. 45, n. 1, p. 91, doi. 10.1134/S1063782611010167

By:

Nemcsics, Ákos;
Takács, Jenö

Publication type:

Article

Nature of Growth Pits in Lead Salt Epilayers Grown by Molecular Beam Epitaxy.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 2, p. 325, doi. 10.1007/s11664-008-0566-5

By:

Jiangang Ma;
Donghui Li;
Gang Bi;
Fanghai Zhao;
Elizondo, Shelly;
Mukherjee, Shaibal;
Zhisheng Shi

Publication type:

Article

First UHV surface studies of single-grain icosahedral Ag-In-Yb quasicrystal.

Published in:

Philosophical Magazine, 2007, v. 87, n. 18-21, p. 2989, doi. 10.1080/14786430701358640

By:

Sharma, H. R.;
Shimoda, M.;
Ohhashi, S.;
Tsai, A. P.

Publication type:

Article

Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 10, p. 13825, doi. 10.1007/s10854-021-05958-8

By:

Gonzales, Karl Cedric;
Prieto, Elizabeth Ann;
Catindig, Gerald Angelo;
De Los Reyes, Alexander;
Faustino, Maria Angela;
Tumanguil-Quitoras, Mae Agatha;
Husay, Horace Andrew;
Vasquez, John Daniel;
Somintac, Armando;
Estacio, Elmer;
Salvador, Arnel

Publication type:

Article

Bismuth Containing III–V Quaternary Alloy InGaAsBi Grown by MBE.

Published in:

2024

By:

Feng, Gan;
Oe, Kunishige;
Yoshimoto, Masahiro

Publication type:

Correction Notice

Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 24, p. 1, doi. 10.1002/pssa.202100399

By:

Zgheib, Charbel;
Lubov, Maxim N.;
Kulikov, Dmitri V.;
Kharlamov, Vladimir S.;
Thiele, Sebastian;
Morales, Francisco M.;
Romanus, Henry;
Rahbany, Nancy;
Beainy, Georges;
Stauden, Thomas;
Pezoldt, Jörg

Publication type:

Article

In situ RHEED analysis of epitaxial GdO thin films grown on Si (001).

Published in:

Applied Physics A: Materials Science & Processing, 2013, v. 110, n. 2, p. 423, doi. 10.1007/s00339-012-7231-9

By:

Xiang, W.;
Ni, H.;
Lu, H.

Publication type:

Article

Deposition and properties of highly C-oriented GaN films on diamond substrates.

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 2, p. 353, doi. 10.1007/s00339-010-5991-7

By:

Zhang, Dong;
Bai, Yizhen;
Qin, Fuwen;
Jia, Fuchao;
Wang, Jian;
Bian, Jiming

Publication type:

Article

STRUCTURAL AND OPTICAL PROPERTIES OF γ-MO2N THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2009, v. 23, n. 23, p. 4817, doi. 10.1142/S0217979209053813

By:

ATUCHIN, V. V.;
KHASANOV, T.;
KOCHUBEY, V. A.;
POKROVSKY, L. D.;
GAVRILOVA, T. A.

Publication type:

Article

EFFECT OF Bi SURFACTANT IN THE HETEROEPITAXIAL GROWTH OF Co ON Cu SURFACES.

Published in:

Surface Review & Letters, 2006, v. 13, n. 2/3, p. 201, doi. 10.1142/S0218625X06008153

By:

KAMIKO, MASAO;
CHIHAYA, HIROAKI;
SUGIMOTO, WATARU;
YAMAMOTO, RYOICHI;
OH, SANGMUN;
XU, JUNHUA;
KOJIMA, ISAO

Publication type:

Article

SUPERSTRUCTURE FORMATION AND X-RAY PHOTOEMISSION PROPERTIES OF THE TlTiOPO4 SURFACE.

Published in:

Surface Review & Letters, 2004, v. 11, n. 2, p. 191, doi. 10.1142/S0218625X04006013

By:

Atuchin, V. V.;
Pokrovsky, L. D.;
Kesler, V. G.;
Maklakova, N. Yu.;
Voronkova, V. I.;
Yanovskii, V. K.

Publication type:

Article

A RHEED Study of MBE Growth of ZnSe on GaAs (111) A-(2 × 2).

Published in:

Surface Review & Letters, 2003, v. 10, n. 4, p. 669, doi. 10.1142/S0218625X03005384

By:

Gard, F. S.;
Riley, J. D.;
Leckey, R.;
Usher, B. F.

Publication type:

Article

RHEED Investigation of Pd/Al Bimetallic System on KCl(001) Substrate.

Published in:

Surface Review & Letters, 1999, v. 6, n. 5, p. 825, doi. 10.1142/S0218625X9900086X

By:

Mašek, K.;
Moroz, V.;
Matolín, V.

Publication type:

Article

Spotlight Topics: A Message from the Editors.

Published in:: Surface Review & Letters, 1999, v. 6, n. 3/4, p. 449, doi. 10.1142/S0218625X99000445
Publication type:: Article

Supercell RHEED Calculations.

Published in:

Surface Review & Letters, 1999, v. 6, n. 3/4, p. 451, doi. 10.1142/S0218625X99000457

By:

Maksym, P. A.

Publication type:

Article

Interpretation of Reflection High Energy Electron Diffraction from Disordered Surfaces: Dynamical Theory and its Application to the Experiment.

Published in:

Surface Review & Letters, 1999, v. 6, n. 3/4, p. 461, doi. 10.1142/S0218625X99000469

By:

Korte, Uwe

Publication type:

Article

RHEED from Epitaxially Grown Thin Films.

Published in:

Surface Review & Letters, 1999, v. 6, n. 3/4, p. 497, doi. 10.1142/S0218625X99000470

By:

Mitura, Z.

Publication type:

Article

Green High Energy Density Material, N[sub2]H[sub2]O.

Published in:

Chemistry Letters, 2003, v. 32, n. 3, p. 304, doi. 10.1246/cl.2003.304

By:

Yi-hong Ding;
Inagaki, Satoshi

Publication type:

Article

Ultrafast Electron Diffraction and Microscopy: Why We Should Know About Transient Electric Fields and Where They Come From.

Published in:

2010

By:

Hyuk Park;
Jian-Min Zuo

Publication type:

Abstract

Stoichiometric Control and Optical Properties of BaTiO3 Thin Films Grown by Hybrid MBE.

Published in:

Advanced Materials Interfaces, 2023, v. 10, n. 11, p. 1, doi. 10.1002/admi.202300018

By:

Fazlioglu‐Yalcin, Benazir;
Suceava, Albert C.;
Kuznetsova, Tatiana;
Wang, Ke;
Gopalan, Venkatraman;
Engel‐Herbert, Roman

Publication type:

Article

RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures.

Published in:

Technical Physics Letters, 2012, v. 38, n. 5, p. 443, doi. 10.1134/S1063785012050094

By:

Nechaev, D.;
Jmerik, V.;
Mizerov, A.;
Kop'ev, P.;
Ivanov, S.

Publication type:

Article

Growth of Si on Si(1 1 1)-7×7 at room temperature under laser substrate excitation.

Published in:

European Physical Journal - Applied Physics, 2015, v. 69, n. 1, p. 10301-p1, doi. 10.1051/epjap/2014140126

By:

El-Kholy, Ibrahim;
Elsayed-Ali, Hani E.

Publication type:

Article

Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes.

Published in:

Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-22784-y

By:

Du, Dongxue;
Manzo, Sebastian;
Zhang, Chenyu;
Saraswat, Vivek;
Genser, Konrad T.;
Rabe, Karin M.;
Voyles, Paul M.;
Arnold, Michael S.;
Kawasaki, Jason K.

Publication type:

Article

Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy.

Published in:

Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03844-2

By:

Nurzal, Nurzal;
Hsu, Ting-Yu;
Susanto, Iwan;
Yu, Ing-Song

Publication type:

Article

Computer studies on reflection high-energy electron diffraction from the growing surface of Ge(001).

Published in:

Journal of Applied Crystallography, 2013, v. 46, n. 4, p. 1024, doi. 10.1107/S0021889813012995

By:

Mitura, Zbigniew

Publication type:

Article

Investigation of Si–Au vicinal surfaces using scanning tunnelling microscopy and reflection high-energy electron diffraction.

Published in:

Journal of Microscopy, 2006, v. 224, n. 1, p. 125, doi. 10.1111/j.1365-2818.2006.01686.x

By:

MAZUREK, P.;
PAPROCKI, K.;
MITURA, Z.

Publication type:

Article

The fabrication of layer-by-layer mode LaCoO3 film by pulsed laser deposition.

Published in:

Surface & Interface Analysis: SIA, 2017, v. 49, n. 11, p. 1160, doi. 10.1002/sia.6274

By:

Liu, Yue;
Ma, Kai;
Yu, Yanlong

Publication type:

Article

Investigation of PbZr0.4Ti0.6O3 capacitors with room temperature as-grown LaNiO3 electrodes.

Published in:

Journal of Materials Science, 2007, v. 42, n. 16, p. 6956, doi. 10.1007/s10853-006-1290-2

By:

Liu, B. T.;
Li, F.;
Cheng, C. S.;
Wu, D. Q.;
Yan, X. B.;
Bian, F.;
Yan, Z.;
Zhao, Q. X.;
Zhang, X. Y.

Publication type:

Article

Sub-critical InAs layers on metamorphic InGaAs for single quantum dot emission at telecom wavelengths.

Published in:

Crystal Research & Technology, 2014, v. 49, n. 8, p. 540, doi. 10.1002/crat.201300395

By:

Seravalli, Luca;
Trevisi, Giovanna;
Muñoz‐Matutano, Guillermo;
Rivas, David;
Martinez‐Pastor, Juan;
Frigeri, Paola

Publication type:

Article

MnSe -- Molecular Beam Epitaxy Growth and Optical Characterisation.

Published in:

Acta Physica Polonica: A, 2019, v. 136, n. 4, p. 598, doi. 10.12693/APhysPolA.136.598

By:

KUCHAREK, J.;
BOŻEK, R.;
PACUSKI, W.

Publication type:

Article

A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system.

Published in:

Semiconductors, 1997, v. 31, n. 10, p. 1057, doi. 10.1134/1.1187025

By:

Tsyrlin, G. É.;
Korneeva, N. P.;
Demidov, V. N.;
Polyakov, N. K.;
Petrov, V. N.;
Ledentsov, N. N.

Publication type:

Article

STUDY OF STRUCTURE CHANGES ON THE Si SURFACES USING REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2004, v. 18, n. 3, p. 289, doi. 10.1142/S021797920402388X

By:

Shigeta, Y.;
Fukaya, Y.

Publication type:

Article

Electron Standing Waves at a Surface During Reflection High Energy Electron Diffraction and Application to Structure Analysis.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2000, v. 14, n. 21, p. 2171, doi. 10.1142/S0217979200002326

By:

Yamanaka, Toshiro;
Ino, Shozo

Publication type:

Article

Self-assembly of Silver Nanoparticles and Multiwall Carbon Nanotubes on Decomposed GaAs Surfaces.

Published in:

Nanoscale Research Letters, 2010, v. 5, n. 11, p. 1737, doi. 10.1007/s11671-010-9703-1

By:

Al-Harthi, S.;
Revathy, K.;
Gard, F.;
Mesli, A.;
George, A.;
Bartringer, J.;
Mamor, M.;
Unnikrishnan, N.

Publication type:

Article

Structural Characterizations and Optical Properties of CeO 2 Thin Films Prepared by Laser Molecular-Beam Epitaxy.

Published in:

Integrated Ferroelectrics, 2012, v. 138, n. 1, p. 145, doi. 10.1080/10584587.2012.688659

By:

Chen, Jun;
Meng, Daqiao

Publication type:

Article

Core level spectroscopy and RHEED analysis of KGd0.95 Nd0.05(WO4)2 surface.

Published in:

European Physical Journal B: Condensed Matter, 2006, v. 51, n. 2, p. 293, doi. 10.1140/epjb/e2006-00208-8

By:

Atuchin, V. V.;
Kesler, V. G.;
Maklakova, N. Yu.;
Pokrovsky, L. D.;
Sheglov, D. V.

Publication type:

Article

Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes.

Published in:

Nature Communications, 2024, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-22784-y

By:

Du, Dongxue;
Manzo, Sebastian;
Zhang, Chenyu;
Saraswat, Vivek;
Genser, Konrad T.;
Rabe, Karin M.;
Voyles, Paul M.;
Arnold, Michael S.;
Kawasaki, Jason K.

Publication type:

Article

Mg‐Facilitated Growth of Cubic Boron Nitride by Ion Beam‐Assisted Molecular Beam Epitaxy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 7, p. 1, doi. 10.1002/pssr.202200036

By:

Storm, David F.;
Maximenko, Sergey I.;
Lang, Andrew C.;
Nepal, Neeraj;
Feygelson, Tatyana I.;
Pate, Bradford B.;
Affouda, Chaffra A.;
Meyer, David J.

Publication type:

Article

Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures under In‐Bilayer Stabilized Conditions.

Published in:

Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400015

By:

Malindretos, Joerg;
Jaeckel, Hendrik;
Hilbrunner, Constantin;
Rizzi, Angela

Publication type:

Article

Heteroepitaxial growth of InGaSb on GaSb/Si(111)-√3 × √3-Ga surface phase with a two-step growth method to investigate the impact of high-quality GaSb buffer layer.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 2, p. n/a, doi. 10.1002/pssb.201600528

By:

Monzur‐Ul‐Akhir, Ahmed Ali Mohammad;
Mori, Masayuki;
Maezawa, Koichi

Publication type:

Article