Works matching DE "NONVOLATILE random-access memory"
Results: 464
Exploring resistive switching in flexible, forming-free Ti/NiO/AZO/PET memory device for future wearable electronics.
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- Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-88549-5
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Tuning resistive switching in ZnO and TiO<sub>2</sub> nanostructures with cobalt doping.
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- Journal of Materials Science: Materials in Electronics, 2025, v. 36, n. 7, p. 1, doi. 10.1007/s10854-025-14348-3
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One‐Dimensional Covalent Organic Framework‐Based Multilevel Memristors for Neuromorphic Computing.
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- Angewandte Chemie, 2024, v. 136, n. 20, p. 1, doi. 10.1002/ange.202402911
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Direct Observation of Conducting Nanofilaments in Graphene-Oxide-Resistive Switching Memory.
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- Advanced Functional Materials, 2015, v. 25, n. 43, p. 6710, doi. 10.1002/adfm.201502734
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Masthead: (Adv. Funct. Mater. 40/2015).
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- Advanced Functional Materials, 2015, v. 25, n. 40, p. n/a, doi. 10.1002/adfm.201570128
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- Article
Biocompatible and Flexible Chitosan-Based Resistive Switching Memory with Magnesium Electrodes.
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- Advanced Functional Materials, 2015, v. 25, n. 35, p. 5586, doi. 10.1002/adfm.201502592
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Electrically Driven Random Laser Memory.
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- Advanced Functional Materials, 2015, v. 25, n. 26, p. 4058, doi. 10.1002/adfm.201500734
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Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory.
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- Advanced Functional Materials, 2015, v. 25, n. 1, p. 158, doi. 10.1002/adfm.201402955
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Memory Switching: Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology (Adv. Funct. Mater. 36/2014).
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- Advanced Functional Materials, 2014, v. 24, n. 36, p. 5772, doi. 10.1002/adfm.201470243
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Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta<sub>2</sub>O<sub>5</sub>/HfO<sub>2-x</sub>/TiN Structure.
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- Advanced Functional Materials, 2014, v. 24, n. 32, p. 5086, doi. 10.1002/adfm.201400064
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- Article
First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides.
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- Journal of Materials Science, 2012, v. 47, n. 21, p. 7498, doi. 10.1007/s10853-012-6638-1
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- Article
Towards Atomic-Scale Investigation of Resistive Switching in Memristive Systems via MEMS-based In Situ Electron Microscopy.
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- Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.781
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- Article
HEAT-RESISTANT POLYIMIDES WITH ELECTRON-ACCEPTOR PENDANT GROUPS OF THE THIOXANTHENONE SERIES FOR RESISTIVE STORAGE DEVICES WITH A LOW SWITCHING VOLTAGE.
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- Journal of Structural Chemistry, 2022, v. 63, n. 11, p. 1811, doi. 10.1134/S0022476622110117
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Superior artificial synaptic properties applicable to neuromorphic computing system in HfO<sub>x</sub>-based resistive memory with high recognition rates.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03862-0
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Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03775-y
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Hexagonal boron nitride (h-BN) memristor arrays for analog-based machine learning hardware.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00328-2
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Decade of 2D-materials-based RRAM devices: a review.
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- Science & Technology of Advanced Materials, 2020, v. 21, n. 1, p. 147, doi. 10.1080/14686996.2020.1730236
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Structural Defects Improve the Memristive Characteristics of Epitaxial La<sub>0.8</sub>Sr<sub>0.2</sub>MnO<sub>3</sub>‐Based Devices (Adv. Mater. Interfaces 23/2022).
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- Advanced Materials Interfaces, 2022, v. 9, n. 23, p. 1, doi. 10.1002/admi.202270132
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Structural Defects Improve the Memristive Characteristics of Epitaxial La<sub>0.8</sub>Sr<sub>0.2</sub>MnO<sub>3</sub>‐Based Devices.
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- Advanced Materials Interfaces, 2022, v. 9, n. 23, p. 1, doi. 10.1002/admi.202200498
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Study of Resistive Switching and Biodegradability in Ultralow Power Memory Device Based on All‐Inorganic Ag/AgBi<sub>2</sub>I<sub>7</sub>/ITO Structure.
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- Advanced Materials Interfaces, 2022, v. 9, n. 17, p. 1, doi. 10.1002/admi.202200237
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Electric Field‐Induced Area Scalability toward the Multilevel Resistive Switching.
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- Advanced Materials Interfaces, 2021, v. 8, n. 17, p. 1, doi. 10.1002/admi.202100664
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One Cut-Point Phase-Type Distributions in Reliability. An Application to Resistive Random Access Memories.
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- Mathematics (2227-7390), 2021, v. 9, n. 21, p. 2734, doi. 10.3390/math9212734
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Non-Uniform Spline Quasi-Interpolation to Extract the Series Resistance in Resistive Switching Memristors for Compact Modeling Purposes.
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- Mathematics (2227-7390), 2021, v. 9, n. 17, p. 2159, doi. 10.3390/math9172159
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An innovative semiconducting Ni(II)-metallogel based robust random access memory (RRAM) device for advanced flexible electronics applications.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-79358-3
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A flexible and fast digital twin for RRAM systems applied for training resilient neural networks.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-73439-z
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An analytical approach to engineer multistability in the oscillatory response of a pulse-driven ReRAM.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-55255-7
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Development of a novel self-healing Zn(II)-metallohydrogel with wide bandgap semiconducting properties for non-volatile memory device application.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-61870-1
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- Article
Effect of Conductive Filament Temperature on ZrO<sub>2</sub> based Resistive Random Access Memory Devices.
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- Journal of Nano- & Electronic Physics, 2020, v. 12, n. 2, p. 1, doi. 10.21272/jnep.12(2).02008
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Resistive Switching Properties of Highly Transparent SnO<sub>2</sub>:Fe.
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- Journal of Nano- & Electronic Physics, 2017, v. 9, n. 1, p. 01025-1, doi. 10.21272/jnep.9(1).01025
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Investigating the Temperature Effects on ZnO, TiO<sub>2</sub>, WO<sub>3</sub> and HfO<sub>2</sub> Based Resistive Random Access Memory (RRAM) Devices.
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- Journal of Nano- & Electronic Physics, 2016, v. 8, n. 4, p. 1, doi. 10.21272/jnep.8(4(1)).04030
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Glucose-based resistive random access memory for transient electronics.
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- Journal of Information Display, 2019, v. 20, n. 4, p. 231, doi. 10.1080/15980316.2019.1664650
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The impact of the dopants on the formation of conductive path in titanium dioxide: ab initio calculations.
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- European Physical Journal B: Condensed Matter, 2016, v. 89, n. 12, p. 1, doi. 10.1140/epjb/e2016-70381-2
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A Symmetric Novel 8T3R Non-Volatile SRAM Cell for Embedded Applications.
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- Symmetry (20738994), 2022, v. 14, n. 4, p. N.PAG, doi. 10.3390/sym14040768
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STUDIES ON STRUCTURAL AND RESISTIVE SWITCHING PROPERTIES OF Al/ZnO/Al STRUCTURED RESISTIVE RANDOM ACCESS MEMORY.
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- Surface Review & Letters, 2017, v. 24, n. 4, p. -1, doi. 10.1142/S0218625X17500482
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Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System.
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- Nanoscale Research Letters, 2022, v. 17, n. 1, p. 1, doi. 10.1186/s11671-022-03696-2
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Design and Analysis of Low Power Memristor Based Non-volatile 4T SRAM Cell with Power Reduction Techniques.
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- Journal of Active & Passive Electronic Devices, 2017, v. 12, n. 1/2, p. 23
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COMPUTATIONAL FAILURE ANALYSIS OF RESISTIVE RAM USED AS A SYNAPSE IN A CONVOLUTION NEURAL NETWORK FOR IMAGE CLASSIFICATION.
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- Electronic Device Failure Analysis, 2021, v. 23, n. 1, p. 29, doi. 10.31399/asm.edfa.2021-1.p029
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Organic Nonvolatile Resistive Switching Memory Based on Molecularly Entrapped Fullerene Derivative within a Diblock Copolymer Nanostructure.
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- Macromolecular Rapid Communications, 2013, v. 34, n. 4, p. 355, doi. 10.1002/marc.201200614
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Titanium oxide vertical resistive random-access memory device.
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- Micro & Nano Letters (Wiley-Blackwell), 2015, v. 10, n. 7, p. 321, doi. 10.1049/mnl.2015.0021
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A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-48932-5
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Demand-Aware NVM Capacity Management Policy for Hybrid Cache Architecture.
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- Computer Journal, 2016, v. 59, n. 5, p. 685, doi. 10.1093/comjnl/bxv103
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Prospects for Ferroelectrics: 2012-2022.
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- ISRN Materials Science, 2013, p. 1, doi. 10.1155/2013/187313
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Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO/TiO/TiN Structure.
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- Nano-Micro Letters, 2015, v. 7, n. 4, p. 392, doi. 10.1007/s40820-015-0055-3
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Editorial: Spiking Neural Network Learning, Benchmarking, Programming and Executing.
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- 2020
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- Editorial
Unsupervised Learning on Resistive Memory Array Based Spiking Neural Networks.
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- Frontiers in Neuroscience, 2019, p. 1, doi. 10.3389/fnins.2019.00812
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Simulation of Inference Accuracy Using Realistic RRAM Devices.
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- Frontiers in Neuroscience, 2019, p. N.PAG, doi. 10.3389/fnins.2019.00593
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Synthesis of thienopyrazine‐ and cyclofluorene–thiophene‐based donor–acceptor low‐band gap polymers and their application in memory devices.
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- Journal of Applied Polymer Science, 2024, v. 141, n. 39, p. 1, doi. 10.1002/app.55998
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Internal resistor of multi-functional tunnel barrier for selectivity and switching uniformity in resistive random access memory.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-364
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- Article
Total ionizing dose (TID) effects of γ ray radiation on switching behaviors of Ag/AlO/Pt RRAM device.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-452
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High performance of graphene oxide-doped silicon oxide-based resistance random access memory.
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- Nanoscale Research Letters, 2013, v. 8, n. 1, p. 1, doi. 10.1186/1556-276X-8-497
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- Article