Works matching DE "TWO-dimensional electron gas"

Results: 425

Effect of Fe Doping Profile on Current Collapse in GaN‐based RF HEMTs.
Published in:
Chemistry - A European Journal, 2024, v. 30, n. 27, p. 1, doi. 10.1002/chem.202304100
By:
- Xu, Linling;
- Guo, Hui;
- Tao, Jiaqi;
- Zavabeti, Ali;
- Zhou, Yugang;
- Zheng, Youdou;
- Zhang, Rong;
- Chen, Dunjun
Publication type:
Article
Reconstruction of Low Dimensional Electronic States by Altering the Chemical Arrangement at the SrTiO3 Surface.
Published in:
Advanced Functional Materials, 2023, v. 33, n. 19, p. 1, doi. 10.1002/adfm.202210526
By:
- Li, Hang;
- Brito, Walber H.;
- Guedes, Eduardo B.;
- Chikina, Alla;
- Dahm, Rasmus T.;
- Christensen, Dennis V.;
- Yun, Shinhee;
- Chiabrera, Francesco M.;
- Plumb, Nicholas C.;
- Shi, Ming;
- Pryds, Nini;
- Radovic, Milan
Publication type:
Article
Ultra‐High Speed, High‐Sensitivity Spin‐Cast MXene‐Semiconductor‐MXene Photodetectors.
Published in:
Advanced Functional Materials, 2022, v. 32, n. 51, p. 1, doi. 10.1002/adfm.202206942
By:
- Montazeri, Kiana;
- Currie, Marc;
- Barsoum, Michel W;
- Nabet, Bahram
Publication type:
Article
Interface Carriers and Enhanced Electron‐Phonon Coupling Effect in Al2O3/TiO2 Heterostructure Revealed by Resonant Inelastic Soft X‐Ray Scattering.
Published in:
Advanced Functional Materials, 2021, v. 31, n. 35, p. 1, doi. 10.1002/adfm.202104430
By:
- Shao, Yu‐Cheng;
- Kuo, Cheng‐Tai;
- Feng, Xuefei;
- Chuang, Yi‐De;
- Seok, Tae Jun;
- Choi, Ji Hyeon;
- Park, Tae Joo;
- Cho, Deok‐Yong
Publication type:
Article
Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier.
Published in:
Advanced Functional Materials, 2021, v. 31, n. 15, p. 1, doi. 10.1002/adfm.202009771
By:
- Zhang, Xiaoyue;
- Tang, Ning;
- Yang, Liuyun;
- Fang, Chi;
- Wan, Caihua;
- Liu, Xingchen;
- Zhang, Shixiong;
- Zhang, Yunfan;
- Wang, Xinqiang;
- Lu, Yuan;
- Ge, Weikun;
- Han, Xiufeng;
- Shen, Bo
Publication type:
Article
Phonon‐Enhanced Near‐Field Spectroscopy to Extract the Local Electronic Properties of Buried 2D Electron Systems in Oxide Heterostructures.
Published in:
Advanced Functional Materials, 2020, v. 30, n. 46, p. 1, doi. 10.1002/adfm.202004767
By:
- Barnett, Julian;
- Rose, Marc‐André;
- Ulrich, Georg;
- Lewin, Martin;
- Kästner, Bernd;
- Hoehl, Arne;
- Dittmann, Regina;
- Gunkel, Felix;
- Taubner, Thomas
Publication type:
Article
Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures.
Published in:
Advanced Functional Materials, 2020, v. 30, n. 46, p. 1, doi. 10.1002/adfm.202004450
By:
- Yang, Liuyun;
- Wang, Xinqiang;
- Wang, Tao;
- Wang, Jingyue;
- Zhang, Wenjie;
- Quach, Patrick;
- Wang, Ping;
- Liu, Fang;
- Li, Duo;
- Chen, Ling;
- Liu, Shangfeng;
- Wei, Jiaqi;
- Yang, Xuelin;
- Xu, Fujun;
- Tang, Ning;
- Tan, Wei;
- Zhang, Jian;
- Ge, Weikun;
- Wu, Xiaosong;
- Zhang, Chi
Publication type:
Article
Self‐Formed, Conducting LaAlO3/SrTiO3 Micro‐Membranes.
Published in:
Advanced Functional Materials, 2020, v. 30, n. 45, p. 1, doi. 10.1002/adfm.201909964
By:
- Sambri, Alessia;
- Scuderi, Mario;
- Guarino, Anita;
- Gennaro, Emiliano Di;
- Erlandsen, Ricci;
- Dahm, Rasmus T.;
- Bjørlig, Anders V.;
- Christensen, Dennis V.;
- Capua, Roberto Di;
- Ventura, Bartolomeo Della;
- Uccio, Umberto Scotti di;
- Mirabella, Salvatore;
- Nicotra, Giuseppe;
- Spinella, Corrado;
- Jespersen, Thomas S.;
- Granozio, Fabio Miletto
Publication type:
Article
Realization of Quantum Hall Effect in Chemically Synthesized InSe.
Published in:
Advanced Functional Materials, 2019, v. 29, n. 40, p. N.PAG, doi. 10.1002/adfm.201904032
By:
- Yuan, Kai;
- Yin, Ruoyu;
- Li, Xinqi;
- Han, Yimo;
- Wu, Meng;
- Chen, Shulin;
- Liu, Shuai;
- Xu, Xiaolong;
- Watanabe, Kenji;
- Taniguchi, Takashi;
- Muller, David A.;
- Shi, Junjie;
- Gao, Peng;
- Wu, Xiaosong;
- Ye, Yu;
- Dai, Lun
Publication type:
Article
X‐Ray Writing of Metallic Conductivity and Oxygen Vacancies at Silicon/SrTiO3 Interfaces.
Published in:
Advanced Functional Materials, 2019, v. 29, n. 25, p. N.PAG, doi. 10.1002/adfm.201900645
By:
- Chikina, Alla;
- Caputo, Marco;
- Naamneh, Muntaser;
- Christensen, Dennis Valbjørn;
- Schmitt, Thorsten;
- Radovic, Milan;
- Strocov, Vladimir N.
Publication type:
Article
Active and buffer layers of GaN HEMT: ECV profiling and 2DEG calculation.
Published in:
Materials Research Innovations, 2020, v. 24, n. 7, p. 402, doi. 10.1080/14328917.2019.1688559
By:
- Yakovlev, George;
- Zubkov, Vasily;
- Solomnikova, Anna
Publication type:
Article
Investigation of Gallium Nitride Based HEMTs with Thermal Dissipation.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 11, p. 1, doi. 10.1002/aelm.202400202
By:
- Zheng, Hao‐Xuan;
- Lee Sanchez, William Anderson;
- Lin, Kun‐Lin;
- Horng, Ray‐Hua
Publication type:
Article
LaAlO3/SrTiO3 Heterointerface: 20 Years and Beyond.
Published in:
Advanced Electronic Materials, 2024, v. 10, n. 3, p. 1, doi. 10.1002/aelm.202300730
By:
- Chen, Shunfeng;
- Ning, Yuanjie;
- Tang, Chi Sin;
- Dai, Liang;
- Zeng, Shengwei;
- Han, Kun;
- Zhou, Jun;
- Yang, Ming;
- Guo, Yanqun;
- Cai, Chuanbing;
- Ariando, Ariando;
- Wee, Andrew T. S.;
- Yin, Xinmao
Publication type:
Article
Anisotropic Electronic Structure of the 2D Electron Gas at the AlOx/KTaO3(110) Interface.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 10, p. 1, doi. 10.1002/aelm.202300267
By:
- Martínez, Emanuel A.;
- Dai, Ji;
- Tallarida, Massimo;
- Nemes, Norbert M.;
- Bruno, Flavio Y.
Publication type:
Article
Charged Domain Walls in BaTiO3 Crystals Emerging from Superdomain Boundaries.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 6, p. 1, doi. 10.1002/aelm.202300005
By:
- Bednyakov, Petr S.;
- Hlinka, Jiří
Publication type:
Article
Critical Assessment of the High Carrier Mobility of Bilayer In2O3/IGZO Transistors and the Underlying Mechanisms.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201184
By:
- Guo, Min;
- Ou, Hai;
- Xie, Dongyu;
- Zhu, Qiaoji;
- Wang, Mengye;
- Liang, Lingyan;
- Liu, Fengjuan;
- Ning, Ce;
- Cao, Hongtao;
- Yuan, Guangcai;
- Lu, Xubing;
- Liu, Chuan
Publication type:
Article
Electrospun Stacked Dual‐Channel Transistors with High Electron Mobility Using a Planar Heterojunction Architecture.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202201007
By:
- He, Bo;
- He, Gang;
- Jiang, Shanshan;
- Liu, Jiangwei;
- Fortunato, Elvira;
- Martins, Rodrigo
Publication type:
Article
Scalable Al2O3–TiO2 Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 2, p. 1, doi. 10.1002/aelm.202200800
By:
- Li, Yang;
- Wang, Wei;
- Zhang, Di;
- Baskin, Maria;
- Chen, Aiping;
- Kvatinsky, Shahar;
- Yalon, Eilam;
- Kornblum, Lior
Publication type:
Article
Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor.
Published in:
Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200807
By:
- Wang, Pengfei;
- Yang, Huan;
- Li, Jiye;
- Zhang, Xiaohui;
- Wang, Lei;
- Xiao, Juncheng;
- Zhao, Bin;
- Zhang, Shengdong;
- Lu, Lei
Publication type:
Article
Elastic and Inelastic Spin Transport in SrTiO3‐based Magnetic Heterostructure.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200232
By:
- Soya, Nozomi;
- Katase, Takayoshi;
- Ando, Kazuya
Publication type:
Article
Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202101406
By:
- Yang, Jeong Yong;
- Yeom, Min Jae;
- Lee, Jaeyong;
- Lee, Kyusang;
- Park, Changkun;
- Heo, Junseok;
- Yoo, Geonwook
Publication type:
Article
Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide‐Bandgap Electronics.
Published in:
Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100652
By:
- Zhang, Yi‐Yu;
- An, Shu;
- Zheng, Yixiong;
- Lai, Junyu;
- Seo, Jung‐Hun;
- Lee, Kwang Hong;
- Kim, Munho
Publication type:
Article
Engineering of Electron Confinement through Defect‐Based Localized Polarization on SrTiO3 Surface.
Published in:
Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202000968
By:
- Chen, Junyan;
- Liu, Wei;
- Eul, Tobias;
- Chen, Mingjing;
- Hu, Xiaoyong;
- Wang, Shufang;
- Jiang, Anquan;
- Yang, Hong;
- Aeschlimann, Martin;
- Gong, Qihuang
Publication type:
Article
Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al2O3/ZnO Thin Films for a Field‐Effect Transistor.
Published in:
Advanced Electronic Materials, 2021, v. 7, n. 1, p. 1, doi. 10.1002/aelm.202000876
By:
- Lee, Hyun Jae;
- Moon, Taehwan;
- Hyun, Seung Dam;
- Kang, Sukin;
- Hwang, Cheol Seong
Publication type:
Article
2D Electronics: Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface (Adv. Electron. Mater. 6/2020).
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901286
By:
- Moon, Taehwan;
- Lee, Hyun Jae;
- Hyun, Seung Dam;
- Kim, Baek Su;
- Kim, Ho Hyun;
- Hwang, Cheol Seong
Publication type:
Article
Origin of the Threshold Voltage Shift in a Transistor with a 2D Electron Gas Channel at the Al2O3/SrTiO3 Interface.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.201901286
By:
- Moon, Taehwan;
- Lee, Hyun Jae;
- Hyun, Seung Dam;
- Kim, Baek Su;
- Kim, Ho Hyun;
- Hwang, Cheol Seong
Publication type:
Article
Lateral Gating of 2D Electron Gas in Cross‐Sectional LaAlO3/SrTiO3.
Published in:
Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.202000068
By:
- Ji, Fan;
- Sharma, Pankaj;
- Xin, Tongzheng;
- Zhang, Dawei;
- Liu, Ying;
- Niu, Ranming;
- Cairney, Julie M.;
- Seidel, Jan
Publication type:
Article
Solution Processed AlInO/In2O3 Heterostructure Channel Thin Film Transistor with Enhanced Performance.
Published in:
Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900550
By:
- Liu, Ling;
- Chen, Shujian;
- Liang, Xiaoci;
- Pei, Yanli
Publication type:
Article
Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas.
Published in:
Technical Physics Letters, 2016, v. 42, n. 11, p. 1061, doi. 10.1134/S1063785016110110
By:
- Vendik, O.;
- Vendik, I.;
- Tural'chuk, P.;
- Parnes, Ya.;
- Parnes, M.
Publication type:
Article
3D quantum Hall effect.
Published in:
National Science Review, 2019, v. 6, n. 2, p. 208, doi. 10.1093/nsr/nwy082
By:
- Lu, Hai-Zhou
Publication type:
Article
SrTiO3 termination control: a method to tailor the oxygen exchange kinetics.
Published in:
2020
By:
- Hensling, Felix V. E.;
- Baeumer, Christoph;
- Rose, Marc-André;
- Gunkel, Felix;
- Dittmann, Regina
Publication type:
Report
Anomalous electronic transport in high-mobility Corbino rings.
Published in:
Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39526-x
By:
- Vijayakrishnan, Sujatha;
- Poitevin, F.;
- Yu, Oulin;
- Berkson-Korenberg, Z.;
- Petrescu, M.;
- Lilly, M. P.;
- Szkopek, T.;
- Agarwal, Kartiek;
- West, K. W.;
- Pfeiffer, L. N.;
- Gervais, G.
Publication type:
Article
Gate-tunable superconducting diode effect in a three-terminal Josephson device.
Published in:
Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-38856-0
By:
- Gupta, Mohit;
- Graziano, Gino V.;
- Pendharkar, Mihir;
- Dong, Jason T.;
- Dempsey, Connor P.;
- Palmstrøm, Chris;
- Pribiag, Vlad S.
Publication type:
Article
Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas.
Published in:
Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-37866-2
By:
- Grezes, Cécile;
- Kandazoglou, Aurélie;
- Cosset-Cheneau, Maxen;
- Arche, Luis M. Vicente;
- Noël, Paul;
- Sgarro, Paolo;
- Auffret, Stephane;
- Garello, Kevin;
- Bibes, Manuel;
- Vila, Laurent;
- Attané, Jean-Philippe
Publication type:
Article
Reducing charge noise in quantum dots by using thin silicon quantum wells.
Published in:
Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-36951-w
By:
- Paquelet Wuetz, Brian;
- Degli Esposti, Davide;
- Zwerver, Anne-Marije J.;
- Amitonov, Sergey V.;
- Botifoll, Marc;
- Arbiol, Jordi;
- Sammak, Amir;
- Vandersypen, Lieven M. K.;
- Russ, Maximilian;
- Scappucci, Giordano
Publication type:
Article
Cooling low-dimensional electron systems into the microkelvin regime.
Published in:
Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-28222-x
By:
- Levitin, Lev V.;
- van der Vliet, Harriet;
- Theisen, Terje;
- Dimitriadis, Stefanos;
- Lucas, Marijn;
- Corcoles, Antonio D.;
- Nyéki, Ján;
- Casey, Andrew J.;
- Creeth, Graham;
- Farrer, Ian;
- Ritchie, David A.;
- Nicholls, James T.;
- Saunders, John
Publication type:
Article
Interactions between Fermi polarons in monolayer WS2.
Published in:
Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-33811-x
By:
- Muir, Jack B.;
- Levinsen, Jesper;
- Earl, Stuart K.;
- Conway, Mitchell A.;
- Cole, Jared H.;
- Wurdack, Matthias;
- Mishra, Rishabh;
- Ing, David J.;
- Estrecho, Eliezer;
- Lu, Yuerui;
- Efimkin, Dmitry K.;
- Tollerud, Jonathan O.;
- Ostrovskaya, Elena A.;
- Parish, Meera M.;
- Davis, Jeffrey A.
Publication type:
Article
Direct visualization of Rashba-split bands and spin/orbital-charge interconversion at KTaO3 interfaces.
Published in:
Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-33621-1
By:
- Varotto, Sara;
- Johansson, Annika;
- Göbel, Börge;
- Vicente-Arche, Luis M.;
- Mallik, Srijani;
- Bréhin, Julien;
- Salazar, Raphaël;
- Bertran, François;
- Fèvre, Patrick Le;
- Bergeal, Nicolas;
- Rault, Julien;
- Mertig, Ingrid;
- Bibes, Manuel
Publication type:
Article
Giant spin-to-charge conversion at an all-epitaxial single-crystal-oxide Rashba interface with a strongly correlated metal interlayer.
Published in:
Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-33350-5
By:
- Kaneta-Takada, Shingo;
- Kitamura, Miho;
- Arai, Shoma;
- Arai, Takuma;
- Okano, Ryo;
- Anh, Le Duc;
- Endo, Tatsuro;
- Horiba, Koji;
- Kumigashira, Hiroshi;
- Kobayashi, Masaki;
- Seki, Munetoshi;
- Tabata, Hitoshi;
- Tanaka, Masaaki;
- Ohya, Shinobu
Publication type:
Article
Superfluid stiffness of a KTaO3-based two-dimensional electron gas.
Published in:
Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-32242-y
By:
- Mallik, S.;
- Ménard, G. C.;
- Saïz, G.;
- Witt, H.;
- Lesueur, J.;
- Gloter, A.;
- Benfatto, L.;
- Bibes, M.;
- Bergeal, N.
Publication type:
Article
Nonlinear Hall Effect in Isotropic k‐Cubed Rashba Model: Berry‐Curvature‐Dipole Engineering by In‐Plane Magnetic Field.
Published in:
Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 12, p. 1, doi. 10.1002/pssr.202400123
By:
- Krzyżewska, Anna;
- Dyrdał, Anna
Publication type:
Article
Investigation of Interlayer Dielectric in BaTiO3/III‐Nitride Transistors.
Published in:
Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 8, p. 1, doi. 10.1002/pssr.202400042
By:
- Lee, Hyunsoo;
- McGlone, Joe F.;
- Ifatur Rahman, Sheikh;
- Chae, Christopher;
- Joishi, Chandan;
- Hwang, Jinwoo;
- Rajan, Siddharth
Publication type:
Article
Multi‐Subband Polar Optical Phonon Scattering in InAlN/AlN/GaN Heterostructures.
Published in:
Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 12, p. 1, doi. 10.1002/pssr.202300238
By:
- Li, Qun;
- Li, Yao;
- Zhang, Yachao;
- Zhang, Jincheng
Publication type:
Article
Confinement‐Enhanced Rashba Spin–Orbit Coupling at the LaAlO3/KTaO3 Interface via LaAlO3 Thickness Control.
Published in:
Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 6, p. 1, doi. 10.1002/pssr.202200441
By:
- Liu, Jia;
- Ye, Fei;
- Bao, Mingrui;
- Fan, Haiyang;
- Liu, Xinqi;
- Zhang, Ziheng;
- Gu, Zongquan;
- Cheng, Long;
- Zhai, Xiaofang
Publication type:
Article
Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO3‐Based Interfaces.
Published in:
Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 6, p. 1, doi. 10.1002/pssr.202200377
By:
- Shashank, Utkarsh;
- Deka, Angshuman;
- Ye, Chen;
- Gupta, Surbhi;
- Medwal, Rohit;
- Rawat, Rajdeep Singh;
- Asada, Hironori;
- Renshaw Wang, X.;
- Fukuma, Yasuhiro
Publication type:
Article
Design and Optimization of Self‐Isolation GaN HEMT with Lateral‐Polarity‐Structure.
Published in:
Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 4, p. 1, doi. 10.1002/pssr.202200436
By:
- Dai, Yijun;
- Zhao, Zihui;
- Luo, Tian;
- Yu, Zhehan;
- Chen, Li;
- Guo, Wei;
- Ye, Jichun
Publication type:
Article
Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer.
Published in:
Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 4, p. 1, doi. 10.1002/pssr.202100573
By:
- Tang, Jinjin;
- Liu, Guipeng;
- Mao, Bangyao;
- Zhao, Guijuan;
- Yang, Jianhong
Publication type:
Article
High‐Performance BeMgZnO/ZnO Heterostructure Field‐Effect Transistors.
Published in:
Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 12, p. 1, doi. 10.1002/pssr.202000371
By:
- Ding, Kai;
- Avrutin, Vitaliy;
- Izyumskaya, Natalia;
- Özgür, Ümit;
- Morkoç, Hadis;
- Šermukšnis, Emilis;
- Matulionis, Arvydas
Publication type:
Article
Two‐Particle Scattering and Resistivity of Rashba Electron Gas.
Published in:
Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 1, p. N.PAG, doi. 10.1002/pssr.201900536
By:
- Nagaev, Kirill E.
Publication type:
Article
Electric‐Field Control of Dirac Two‐Dimensional Electron Gas in PbTe/CdTe Heterostructures.
Published in:
Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 5, p. N.PAG, doi. 10.1002/pssr.201800551
By:
- Zhang, Le;
- Shu, Tianyu;
- Wu, Huizhen;
- Ye, Zhizhen;
- Zhu, Liping
Publication type:
Article