Works matching Transistors

Results: 5000

Çay Atıklarından Türetilen Yüksek Performans Karbonun Transistörde İletim Kanal Materyali Olarak Uygulanması.

Published in:

Journal of Polytechnic, 2020, v. 23, n. 3, p. 909, doi. 10.2339/politeknik.599510

By:

BIÇAKÇI, Saliha Nur;
AKGÜL, Gökçen

Publication type:

Article

基于薄膜晶体管的冠状病毒检测研究进展.

Published in:

Journal of Shanghai University / Shanghai Daxue Xuebao, 2024, v. 30, n. 6, p. 899, doi. 10.12066/j.issn.1007-2861.2596

By:

涂建新;
郝魁;
孙乐;
李爱军

Publication type:

Article

电子纸用柔性薄膜晶体管的研究进展.

Published in:

Chinese Journal of Liquid Crystal & Displays, 2022, v. 37, n. 8, p. 948, doi. 10.37188/CJLCD.2022-0102

By:

高执文;
许伟;
姚日晖;
魏小琴;
钟锦耀;
杨跃鑫;
符晓;
刘泰江;
宁洪龙;
彭俊彪

Publication type:

Article

A Comparative Study of Radiation Doses and Treatment Area Dependence in Thermoluminescence Dosimetry Systems and Metal Oxide Semiconductor Field Effect Transistors.

Published in:

Journal of Turgut Ozal Medical Center, 2015, v. 22, n. 1, p. 22, doi. 10.7247/jtomc.2014.1764

By:

Pepele, Eda Kaya;
Us, Songül Barlaz;
Yaray, Kadir;
Eroğlu, Celalettin;
Dirican, Bahar;
Soyuer, Serdar

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Article

A Transistor Based Fast Driving Circuit for Bipolar Step Motor Driving.

Published in:

Turkish Journal of Science & Technology, 2014, v. 9, n. 1, p. 63

By:

SALIHMUHSIN, M.;
BABA, S.;
YILMAZ, A. S.;
SEKKELI, M.;
DIZIBUYUK, A.

Publication type:

Article

Metodología para la obtención del Rango de Trabajo de un transistor como Elemento de Control en una Fuente de Corriente DC.

Published in:

Revista Facultad de Ingeniería Universidad de Antioquia, 2013, n. 67, p. 89

By:

Osorno, Yurany A.;
Muñoz, John Ever;
Londoño, Nelson;
Velilla, Esteban

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Article

Análisis, modelado y simulación del ruido flicker en transistores MOS.

Published in:

Acta Universitaria, 2013, v. 23, n. 5, p. 20, doi. 10.15174/au.2013.478

By:

Ibarra, F. Sandoval;
Hernández, Natanael Melchor;
Ortega Cisneros, Susana

Publication type:

Article

Bor arsenit bazlı nano-transistörlerde elektrot genişliğinin enerji aralığı üzerindeki etkisinin incelenmesi, bir DFT çalışması.

Published in:

Nigde Omer Halisdemir University Journal of Engineering Sciences / Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi, 2024, v. 13, n. 1, p. 60, doi. 10.28948/ngumuh.1310492

By:

Ertekin, Nilüfer

Publication type:

Article

Mejoras del proceso de diseño en la industria de transistores de microondas.

Published in:

Revista Facultad de Ingeniería - UPTC, 2019, v. 28, n. 52, p. 99, doi. 10.19053/01211129.v28.n52.2019.9784

By:

Rafael-Valdivia, Guillermo

Publication type:

Article

Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Effect Transistor Technology.

Published in:

Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials, 2020, v. 50, n. 4, p. 233, doi. 10.33180/InfMIDEM2020.401

By:

Mamatov, Islombek;
Özçelep, Yasin;
Kaçar, Firat

Publication type:

Article

Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction.

Published in:

HOLOS, 2020, v. 1, p. 1, doi. 10.15628/holos.2020.8378

By:

SABAGHI, M.

Publication type:

Article

兼具高电流增益和高击穿性能的电荷等离子体双极晶体管.

Published in:

Journal of Beijing University of Technology, 2023, v. 49, n. 11, p. 1141, doi. 10.11936/bjutxb2022020003

By:

金冬月;
贾晓雪;
张万荣;
那伟聪;
曹路明;
潘永安;
刘圆圆;
范广祥

Publication type:

Article

Relationship between crystalline structure of poly(3-hexylthiophene) blends and properties of organic thin-film transistors - a brief review.

Published in:

Polimery, 2016, v. 61, n. 6, p. 433, doi. 10.14314/polimery.2016.433

By:

Chlebosz, Dorota;
Janasz, Łukasz;
Pisula, Wojciech;
Kiersnowski, Adam

Publication type:

Article

Dual‐Gate Field Effect Transistors: Planar Dual‐Gate Paper/Oxide Field Effect Transistors as Universal Logic Gates (Adv. Electron. Mater. 12/2018)

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 12, p. 1, doi. 10.1002/aelm.201870059

By:

Gaspar, Diana;
Martins, Jorge;
Bahubalindruni, Pydi;
Pereira, Luís;
Fortunato, Elvira;
Martins, Rodrigo

Publication type:

Article

One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 12, p. 2134, doi. 10.3390/electronics9122134

By:

Yoon, Young Jun;
Lee, Jae Sang;
Kim, Dong-Seok;
Lee, Sang Ho;
Kang, In Man

Publication type:

Article

Flexibler organischer elektrochemischer Transistor als Biosensor für Organ-on-a-Chip.

Published in:

Technisches Messen, 2020, v. 87, p. s114, doi. 10.1515/teme-2020-0038

By:

Bakhchova, Liubov;
Steinmann, Ulrike

Publication type:

Article

Flexibler organischer elektrochemischer Transistor als Biosensor für Organ-on-a-Chip.

Published in:

Technisches Messen, 2020, v. 87, p. s114, doi. 10.1515/teme-2020-0038

By:

Bakhchova, Liubov;
Steinmann, Ulrike

Publication type:

Article

3D Double-Gate Junctionless Nanowire Transistor-Based Pass Transistor Logic Circuits for Digital Applications.

Published in:

IETE Journal of Research, 2022, v. 68, n. 2, p. 1342, doi. 10.1080/03772063.2019.1649203

By:

Baidya, Achinta;
Lenka, Trupti R.;
Baishya, Srimanta

Publication type:

Article

Transistor-unit monitors blood pressure.

Published in:

Biomedical Engineering / Biomedizinische Technik, 1959, v. 4, n. 6, p. 250

By:

Hermes

Publication type:

Article

Transistor Amplifier for Medical Recording.

Published in:

Biomedical Engineering / Biomedizinische Technik, 1959, v. 4, n. 1, p. 22

By:

Gaedcke

Publication type:

Article

Fabrication and characterisation of Al gate n‐metal–oxide–semiconductor field‐effect transistor, on‐chip fabricated with silicon nitride ion‐sensitive field‐effect transistor.

Published in:

IET Computers & Digital Techniques (Wiley-Blackwell), 2016, v. 10, n. 5, p. 268, doi. 10.1049/iet-cdt.2015.0174

By:

Chaudhary, Rekha;
Sharma, Amit;
Sinha, Soumendu;
Yadav, Jyoti;
Sharma, Rishi;
Mukhiya, Ravindra;
Khanna, Vinod K.

Publication type:

Article

High-Performance Vertical Light-Emitting Transistors Based on ZnO Transistor/Quantum-Dot Light-Emitting Diode Integration and Electron Injection Layer Modification.

Published in:

Micromachines, 2023, v. 14, n. 10, p. 1933, doi. 10.3390/mi14101933

By:

Chang, Jui-Fen;
Yu, Jia-Min

Publication type:

Article

Advances in organic transistor-based biosensors: from organic electrochemical transistors to electrolyte-gated organic field-effect transistors.

Published in:

Analytical & Bioanalytical Chemistry, 2012, v. 402, n. 5, p. 1813, doi. 10.1007/s00216-011-5363-y

By:

Kergoat, Loïg;
Piro, Benoît;
Berggren, Magnus;
Horowitz, Gilles;
Pham, Minh-Chau

Publication type:

Article

晶态 IGZO 薄膜晶体管的研究进展.

Published in:

Chinese Journal of Liquid Crystal & Displays, 2023, v. 38, n. 8, p. 1031, doi. 10.37188/CJLCD.2023-0121

By:

姜柏齐;
刘斌;
刘贤文;
张硕;
翁乐;
史大为;
郭建;
苏顺康;
姚琪;
宁策;
袁广才;
王峰;
喻志农

Publication type:

Article

Current-mode Universal Filter using Fin type Field Effect Transistor (FinFET) - Based Multioutput Current Controlled Current Conveyor Transconductance Amplifiers.

Published in:

Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji, 2024, v. 12, n. 2, p. 753, doi. 10.29109/gujsc.1487193

By:

DEMİREL, Hüseyin

Publication type:

Article

Measurement of DC and AC Response Curves of a Bipolar Transistor as a Function of Frequency.

Published in:

Measurement Techniques, 2019, v. 62, n. 8, p. 729, doi. 10.1007/s11018-019-01686-y

By:

Titkov, A. A.;
Khvalin, A. L.

Publication type:

Article

A Method of Measuring the S-parameters of Transistors on a Simulator-Analyzer of Amplifiers and UHF Self-Excited Oscillators.

Published in:

Measurement Techniques, 2017, v. 60, n. 6, p. 612, doi. 10.1007/s11018-017-1244-x

By:

Savel'kaev, S.;
Romas'ko, S.

Publication type:

Article

Measurements of the Electrical Characteristics of Bipolar and MOS Transistors Under the Effect of Radiation.

Published in:

Measurement Techniques, 2017, v. 59, n. 10, p. 1104, doi. 10.1007/s11018-017-1100-z

By:

Petrosyants, K.;
Samburskii, L.;
Kharitonov, I.;
Kozhukhov, M.

Publication type:

Article

New FinFet Transistor Implementation of Floating and Grounded Inductance Simulator Based on Active Elements.

Published in:

Gazi Journal of Engineering Sciences (GJES) / Gazi Mühendislik Bilimleri Dergisi, 2023, v. 9, n. 3, p. 647, doi. 10.30855/gmbd.0705095

By:

Demirel, Hüseyin;
Mohammed, Arsen Ahmed

Publication type:

Article

Vertical bipolar junction transistor triggered silicon‐controlled rectifier for nanoscale ESD engineering.

Published in:

Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 5, p. 350, doi. 10.1049/el.2019.3864

By:

Du, Feibo;
Hou, Fei;
Song, Wenqiang;
Xu, YiChen;
Liu, Jizhi;
Liu, Zhiwei;
Liou, Juin J.

Publication type:

Article

RF operation in graded Al<sub>x</sub>Ga<sub>1−x</sub>N (x = 0.65 to 0.82) channel transistors.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 22, p. 1351, doi. 10.1049/el.2018.6897

By:

Razzak, T.;
Hwang, S.;
Coleman, A.;
Bajaj, S.;
Xue, H.;
Zhang, Y.;
Jamal‐Eddine, Z.;
Sohel, S.H.;
Lu, W.;
Khan, A.;
Rajan, S.

Publication type:

Article

Thin‐film heterojunction field‐effect transistors with multiple subthreshold swings for large‐area/flexible electronics and displays.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 8, p. 570, doi. 10.1049/el.2016.4597

By:

Hekmatshoar, B.

Publication type:

Article

260‐GHz differential amplifier in SiGe heterojunction bipolar transistor technology.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 194, doi. 10.1049/el.2016.3882

By:

Yoon, D.;
Seo, M.‐G.;
Song, K.;
Kaynak, M.;
Tillack, B.;
Rieh, J.‐S.

Publication type:

Article

Analogue/RF performance attributes of underlap tunnel field effect transistor for low power applications.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 7, p. 559, doi. 10.1049/el.2015.3797

By:

Vijayvargiya, V.;
Reniwal, B.S.;
Singh, P.;
Vishvakarma, S.K.

Publication type:

Article

Temperature‐stable heat pulse driver circuit for low‐voltage single supply soil moisture sensors based on junction transistors.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 3, p. 208, doi. 10.1049/el.2015.3329

By:

Dias, P.C.;
Morais, F.O.;
França, M.B.

Publication type:

Article

Two‐transistor and two‐magnetic‐tunnel‐junction multi‐level cell structured spin‐transfer torque magnetic random access memory with optimisations on power and reliability.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 1, p. 104, doi. 10.1049/el.2015.2965

By:

Tao, Zihao;
Jia, Ze

Publication type:

Article

Implementation of low‐power, non‐volatile latch utilising ferroelectric transistor.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 24, p. 1884, doi. 10.1049/el.2015.2927

By:

Mitchell, C.;
Hunt, M.R.;
McCartney, C.L.;
Ho, F.D.

Publication type:

Article

Experimentally verified drain‐current model for variable barrier transistor.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 16, p. 1364, doi. 10.1049/el.2015.1475

By:

Moldovan, O.;
Lime, F.;
Barraud, S.;
Smaani, B.;
Latreche, S.;
Iñiguez, B.

Publication type:

Article

4H‐SiC work‐function‐dependent bipolar transistor with ultra‐high current gain.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 23, p. 1805, doi. 10.1049/el.2014.2432

By:

Yuan, Lei;
Zhang, Yuming;
Song, Qingwen;
Tang, Xiaoyan;
Zhang, Yimen

Publication type:

Article

Design and performance projection of symmetric bipolar charge‐plasma transistor on SOI.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 19, p. 1461, doi. 10.1049/el.2014.2407

By:

Sahu, C.;
Ganguly, A.;
Singh, J.

Publication type:

Article

非熔性脉冲激光退火绝缘栅双极晶体管仿真研究.

Published in:

Electronic Components & Materials, 2024, v. 43, n. 11, p. 1406, doi. 10.14106/j.cnki.1001-2028.2024.0096

By:

刘阳;
袁和平;
陈译;
何堤;
林岚杰

Publication type:

Article

超临界流体改善 IGZO 薄膜晶体管光电特性研究.

Published in:

Electronic Components & Materials, 2023, v. 42, n. 1, p. 63, doi. 10.14106/j.cnki.1001-2028.2023.1392

By:

董礼;
王明格;
张冠张

Publication type:

Article

基于微增材技术制造的氧化铟镓锌薄膜晶体管及其性能.

Published in:

Electronic Components & Materials, 2021, v. 40, n. 12, p. 1171, doi. 10.14106/j.cnki.1001-2028.2021.0403

By:

张奇;
崔西会;
方杰;
项徽清;
刘建国

Publication type:

Article

Highly Resistive Biomembranes Coupled to Organic Transistors enable Ion‐Channel Mediated Neuromorphic Synapses.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 4, p. 1, doi. 10.1002/aelm.202400526

By:

Maraj, Joshua J.;
Schafer, Emily A.;
Mansour, Michelle M.;
Hussein, Essraa A.;
Berryman, Joseph;
Klavon, Elizabeth;
Rivnay, Jonathan;
Sarles, Stephen A.

Publication type:

Article

Automated Scanning Dielectric Microscopy Toolbox for Operando Nanoscale Electrical Characterization of Electrolyte‐Gated Organic Transistors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 11, p. 1, doi. 10.1002/aelm.202400222

By:

Tanwar, Shubham;
Millan‐Solsona, Ruben;
Ruiz‐Molina, Sara;
Mas‐Torrent, Marta;
Kyndiah, Adrica;
Gomila, Gabriel

Publication type:

Article

Organic Mixed Ionic Electronic Conductor Nanochannels for Vertical Electrochemical and Ionic Transistors.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202300762

By:

Zhang, Chenhong;
Margotti, Lorenzo;
Decataldo, Francesco;
Piccioni, Alberto;
Wang, Hongzhi;
Fraboni, Beatrice;
Li, Yaogang;
Cramer, Tobias

Publication type:

Article

Graphene‐on‐Silicon Hybrid Field‐Effect Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201083

By:

Fomin, Mykola;
Pasadas, Francisco.;
Marin, Enrique G.;
Medina‐Rull, Alberto;
Ruiz, Francisco. G.;
Godoy, Andrés.;
Zadorozhnyi, Ihor;
Beltramo, Guillermo;
Brings, Fabian;
Vitusevich, Svetlana;
Offenhaeusser, Andreas;
Kireev, Dmitry

Publication type:

Article

Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201163

By:

Bestelink, Eva;
Teng, Hao‐Jing;
Zschieschang, Ute;
Klauk, Hagen;
Sporea, Radu A.

Publication type:

Article

Output and Negative‐Region Characteristics in Organic Anti‐Ambipolar Transistors.

Published in:

Advanced Electronic Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1002/aelm.202200783

By:

Zhu, Junyi;
Mori, Takehiko

Publication type:

Article

Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200643

By:

Sun, Chen;
Li, Chao;
Samanta, Subhranu;
Han, Kaizhen;
Zheng, Zijie;
Zhang, Jishen;
Kong, Qiwen;
Xu, Haiwen;
Zhou, Zuopu;
Chen, Yue;
Zhuo, Cheng;
Ni, Kai;
Yin, Xunzhao;
Gong, Xiao

Publication type:

Article