Works matching DE "SCHOTTKY barrier diodes"
Results: 1291
Electrically Detected Magnetic Resonance Observations of Spin‐Dependent Space‐Charge‐Limited Conduction in Regioregular Poly(3‐Hexylthiophene).
- Published in:
- Macromolecular Chemistry & Physics, 2018, v. 219, n. 3, p. 1, doi. 10.1002/macp.201700395
- By:
- Publication type:
- Article
Fully‐Depleted PdTe<sub>2</sub>/WSe<sub>2</sub> van der Waals Field Effect Transistor with High Light On/Off Ratio and Broadband Detection.
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 40, p. 1, doi. 10.1002/adfm.202302466
- By:
- Publication type:
- Article
Removal of Interlayer Water of two Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXenes as a Versatile Tool for Controlling the Fermi‐Level Pinning‐Free Schottky Diodes with Nb:SrTiO<sub>3</sub>.
- Published in:
- Advanced Functional Materials, 2023, v. 33, n. 2, p. 1, doi. 10.1002/adfm.202209538
- By:
- Publication type:
- Article
Edge‐Assisted Epitaxy of 2D TaSe<sub>2</sub>‐MoSe<sub>2</sub> Metal–Semiconductor Heterostructures and Application to Schottky Diodes.
- Published in:
- Advanced Functional Materials, 2022, v. 32, n. 30, p. 1, doi. 10.1002/adfm.202201449
- By:
- Publication type:
- Article
Dynamic Schottky Diode Direct‐Current Generator under Extremely Low Temperature.
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 40, p. 1, doi. 10.1002/adfm.202105325
- By:
- Publication type:
- Article
Multifunctional Lateral Transition‐Metal Disulfides Heterojunctions.
- Published in:
- Advanced Functional Materials, 2020, v. 30, n. 32, p. 1, doi. 10.1002/adfm.202002939
- By:
- Publication type:
- Article
InSe Schottky Diodes Based on Van Der Waals Contacts.
- Published in:
- Advanced Functional Materials, 2020, v. 30, n. 24, p. 1, doi. 10.1002/adfm.202001307
- By:
- Publication type:
- Article
Wearable Energy Generating and Storing Textile Based on Carbon Nanotube Yarns.
- Published in:
- Advanced Functional Materials, 2020, v. 30, n. 23, p. 1, doi. 10.1002/adfm.202000411
- By:
- Publication type:
- Article
Flexible Crossbar‐Structured Phase Change Memory Array via Mo‐Based Interfacial Physical Lift‐Off.
- Published in:
- Advanced Functional Materials, 2019, v. 29, n. 6, p. N.PAG, doi. 10.1002/adfm.201806338
- By:
- Publication type:
- Article
Defect Restoration of Low‐Temperature Sol‐Gel‐Derived ZnO via Sulfur Doping for Advancing Polymeric Schottky Photodiodes.
- Published in:
- Advanced Functional Materials, 2018, v. 28, n. 30, p. 1, doi. 10.1002/adfm.201802582
- By:
- Publication type:
- Article
Junction properties of Schottky diode based on composite organic semiconductors: Polyaniline-polystyrene system.
- Published in:
- Journal of Polymer Research, 2004, v. 11, n. 4, p. 269, doi. 10.1007/s10965-005-2412-2
- By:
- Publication type:
- Article
Actin Paracrystals Display Double Schottky Diode‐Like Electrical Behavior.
- Published in:
- Advanced Electronic Materials, 2024, v. 10, n. 2, p. 1, doi. 10.1002/aelm.202300144
- By:
- Publication type:
- Article
Oxygen Plasma Treatment to Enable Indium Oxide MESFET Devices.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 11, p. 1, doi. 10.1002/aelm.202300291
- By:
- Publication type:
- Article
Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes.
- Published in:
- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201155
- By:
- Publication type:
- Article
Gate‐Tunable Photovoltaic Behavior and Polarized Image Sensor Based on All‐2D TaIrTe<sub>4</sub>/MoS<sub>2</sub> Van Der Waals Schottky Diode.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200551
- By:
- Publication type:
- Article
Self‐Stabilized Hydrogenation of Amorphous InGaZnO Schottky Diode with Bilayer Passivation.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200280
- By:
- Publication type:
- Article
Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode‐One Resistor Applications.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100961
- By:
- Publication type:
- Article
Schottky Diode with Asymmetric Metal Contacts on WS<sub>2</sub>.
- Published in:
- Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202100941
- By:
- Publication type:
- Article
Metal‐Insulator‐Insulator‐Metal Diodes with Responsivities Greater Than 30 A W<sup>−1</sup> Based on Nitrogen‐Doped TiO<sub>x</sub> and AlO<sub>x</sub> Insulator Layers.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 11, p. 1, doi. 10.1002/aelm.202100467
- By:
- Publication type:
- Article
Graphene Diodes: Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics (Adv. Electron. Mater. 7/2021).
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202170025
- By:
- Publication type:
- Article
Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 7, p. 1, doi. 10.1002/aelm.202001210
- By:
- Publication type:
- Article
Indium–Gallium–Zinc Oxide Schottky Diodes Operating across the Glass Transition of Stimuli‐Responsive Polymers.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901210
- By:
- Publication type:
- Article
Metal–Semiconductor Field‐Effect Transistors Based on the Amorphous Multi‐Anion Compound ZnON.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 4, p. 1, doi. 10.1002/aelm.201901066
- By:
- Publication type:
- Article
Benchmarking β‐Ga<sub>2</sub>O<sub>3</sub> Schottky Diodes by Nanoscale Ballistic Electron Emission Microscopy.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 3, p. 1, doi. 10.1002/aelm.201901151
- By:
- Publication type:
- Article
2D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodes.
- Published in:
- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201900958
- By:
- Publication type:
- Article
Low‐Voltage Operation of Ring Oscillators Based on Room‐Temperature‐Deposited Amorphous Zinc‐Tin‐Oxide Channel MESFETs.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900548
- By:
- Publication type:
- Article
Improving Performance of Hybrid Graphene–Perovskite Photodetector by a Scratch Channel.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 6, p. N.PAG, doi. 10.1002/aelm.201900168
- By:
- Publication type:
- Article
Asymmetric Double‐Gate β‐Ga<sub>2</sub>O<sub>3</sub> Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 6, p. N.PAG, doi. 10.1002/aelm.201800938
- By:
- Publication type:
- Article
Flexible β‐Ga<sub>2</sub>O<sub>3</sub> Nanomembrane Schottky Barrier Diodes.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 3, p. N.PAG, doi. 10.1002/aelm.201800714
- By:
- Publication type:
- Article
Releasable High‐Performance GaAs Schottky Diodes for Gigahertz Operation of Flexible Bridge Rectifier.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800772
- By:
- Publication type:
- Article
Doping Effect on Conducting Polymer‐Metal Schottky DC Generators.
- Published in:
- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800675
- By:
- Publication type:
- Article
Injection photodiode based on p-CdTe film.
- Published in:
- Technical Physics Letters, 2012, v. 38, n. 1, p. 34, doi. 10.1134/S1063785012010099
- By:
- Publication type:
- Article
Wide-aperture detector of terahertz radiation based on GaAs/InGaAs transistor structure with large-area slit grating gate.
- Published in:
- Technical Physics Letters, 2010, v. 36, n. 4, p. 365, doi. 10.1134/S106378501004022X
- By:
- Publication type:
- Article
Acoustic wave corrected current-voltage characteristics of GaAs-based structures with Schottky contacts.
- Published in:
- Technical Physics Letters, 2006, v. 32, n. 6, p. 517, doi. 10.1134/S1063785006060204
- By:
- Publication type:
- Article
Mechanisms of current transfer and photosensitivity in Zn/CuInSe<sub>2</sub> Schottky diodes.
- Published in:
- Technical Physics Letters, 2006, v. 32, n. 5, p. 459, doi. 10.1134/S1063785006050269
- By:
- Publication type:
- Article
Structural and Electrical Characteristics of Epitaxial InP Layers on Porous Substrates and the Parameters of Related Au–Ti Schottky Barriers.
- Published in:
- Technical Physics Letters, 2002, v. 28, n. 9, p. 735
- By:
- Publication type:
- Article
Photoelectric Properties of Planar Structures with Double Schottky Barrier Treated in a High-Vacuum Microwave Discharge.
- Published in:
- Technical Physics Letters, 2002, v. 28, n. 8, p. 625, doi. 10.1134/1.1505531
- By:
- Publication type:
- Article
Temperature Dependence of the Quantum Efficiency of 4H-SiC-Based Schottky Photodiodes.
- Published in:
- Technical Physics Letters, 2001, v. 27, n. 9, p. 776, doi. 10.1134/1.1407356
- By:
- Publication type:
- Article
Electrical properties of Schottky diodes using high-resistivity CdTe crystals.
- Published in:
- Technical Physics Letters, 1999, v. 25, n. 8, p. 642, doi. 10.1134/1.1262583
- By:
- Publication type:
- Article
Influence of sulfide treatment of profiled-interface Au–GaAs Schottky diodes on the polariton peak of the photoresponse.
- Published in:
- Technical Physics Letters, 1997, v. 23, n. 5, p. 355, doi. 10.1134/1.1261888
- By:
- Publication type:
- Article
Record Thick κ(ε)-Ga<sub>2</sub>O<sub>3</sub>Epitaxial Layers Grown on GaN/c-Sapphire.
- Published in:
- Technical Physics, 2023, v. 68, n. 12, p. 689, doi. 10.1134/S1063784223080236
- By:
- Publication type:
- Article
Avalanche Breakdown in 4H-SiC Schottky Diodes: Reliability Aspects.
- Published in:
- Technical Physics, 2020, v. 65, n. 12, p. 2041, doi. 10.1134/S1063784220120117
- By:
- Publication type:
- Article
The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range.
- Published in:
- Sakarya University Journal of Science (SAUJS) / Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2017, v. 21, n. 6, p. 1286, doi. 10.16984/saufenbilder.279996
- By:
- Publication type:
- Article
Design of a Novel Sampling Pulse Generator for Ultra-Wideband Through-Wall Radar.
- Published in:
- Telecommunication Engineering, 2014, v. 54, n. 9, p. 1280, doi. 10.3969/j.issn.1001-893x.2014.09.020
- By:
- Publication type:
- Article
CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Se<sub>2</sub> thin films' properties grown by close-spaced vapor transport technique for second-generation solar cells.
- Published in:
- Materials for Renewable & Sustainable Energy, 2019, v. 8, n. 3, p. N.PAG, doi. 10.1007/s40243-019-0151-2
- By:
- Publication type:
- Article
Temperature Effect on Al/p-CuInS<sub>2</sub>/SnO<sub>2</sub>(F) Schottky Diodes.
- Published in:
- Engineering, Technology & Applied Science Research, 2019, v. 9, n. 5, p. 4695, doi. 10.48084/etasr.3072
- By:
- Publication type:
- Article
Enhancement of output power level of RF energy harvesting circuit using Wilkinson power combiner.
- Published in:
- International Journal of Electronics Letters, 2023, v. 11, n. 1, p. 1, doi. 10.1080/21681724.2021.2025436
- By:
- Publication type:
- Article
Unexpected two-step response in AlGaAs/GaAs heterostructure-based SBD.
- Published in:
- International Journal of Electronics Letters, 2020, v. 8, n. 2, p. 223, doi. 10.1080/21681724.2019.1584916
- By:
- Publication type:
- Article
Schottky model for triboelectric temperature dependence.
- Published in:
- Scientific Reports, 2018, p. 1, doi. 10.1038/s41598-018-23666-y
- By:
- Publication type:
- Article
Synthesis of Peripherally Tetrasubstituted Phthalocyanines and Their Applications in Schottky Barrier Diodes.
- Published in:
- Journal of Chemistry, 2017, p. 1, doi. 10.1155/2017/9715069
- By:
- Publication type:
- Article