Works matching IS 09359648 AND DT 2022 AND VI 34 AND IP 48

Results: 30

2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics (Adv. Mater. 48/2022).

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270336

By:

Chen, Yulong;
Tian, Ziao;
Wang, Xiang;
Ran, Nian;
Wang, Chen;
Cui, Anyang;
Lu, Huihui;
Zhang, Miao;
Xue, Zhongying;
Mei, Yongfeng;
Chu, Paul K.;
Liu, Jianjun;
Hu, Zhigao;
Di, Zengfeng

Publication type:

Article

Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors (Adv. Mater. 48/2022).

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270335

By:

Xiong, Xiong;
Kang, Jiyang;
Liu, Shiyuan;
Tong, Anyu;
Fu, Tianyue;
Li, Xuefei;
Huang, Ru;
Wu, Yanqing

Publication type:

Article

Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors (Adv. Mater. 48/2022).

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270334

By:

Wang, Xinyu;
Chen, Xinyu;
Ma, Jingyi;
Gou, Saifei;
Guo, Xiaojiao;
Tong, Ling;
Zhu, Junqiang;
Xia, Yin;
Wang, Die;
Sheng, Chuming;
Chen, Honglei;
Sun, Zhengzong;
Ma, Shunli;
Riaud, Antoine;
Xu, Zihan;
Cong, Chunxiao;
Qiu, Zhijun;
Zhou, Peng;
Xie, Yufeng;
Bian, Lifeng

Publication type:

Article

Multilayer Reservoir Computing Based on Ferroelectric α‐In2Se3 for Hierarchical Information Processing (Adv. Mater. 48/2022).

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202108826

By:

Liu, Keqin;
Dang, Bingjie;
Zhang, Teng;
Yang, Zhen;
Bao, Lin;
Xu, Liying;
Cheng, Caidie;
Huang, Ru;
Yang, Yuchao

Publication type:

Article

The Road for 2D Semiconductors in the Silicon Age (Adv. Mater. 48/2022).

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270332

By:

Wang, Shuiyuan;
Liu, Xiaoxian;
Zhou, Peng

Publication type:

Article

Masthead: (Adv. Mater. 48/2022).

Published in:: Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270331
Publication type:: Article

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems (Adv. Mater. 48/2022).

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270330

By:

Yan, Xiaodong;
Qian, Justin H.;
Sangwan, Vinod K.;
Hersam, Mark C.

Publication type:

Article

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms (Adv. Mater. 48/2022).

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270329

By:

Shen, Yang;
Dong, Zuoyuan;
Sun, Yabin;
Guo, Hao;
Wu, Fan;
Li, Xianglong;
Tang, Jun;
Liu, Jun;
Wu, Xing;
Tian, He;
Ren, Tian‐Ling

Publication type:

Article

Electronic Circuits made of 2D Materials.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202207843

By:

Lanza, Mario;
Radu, Iuliana

Publication type:

Article

A Sparse and Spike‐Timing‐Based Adaptive Photoencoder for Augmenting Machine Vision for Spiking Neural Networks.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202202535

By:

Subbulakshmi Radhakrishnan, Shiva;
Chakrabarti, Shakya;
Sen, Dipanjan;
Das, Mayukh;
Schranghamer, Thomas F.;
Sebastian, Amritanand;
Das, Saptarshi

Publication type:

Article

Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202202472

By:

Wang, Xinyu;
Chen, Xinyu;
Ma, Jingyi;
Gou, Saifei;
Guo, Xiaojiao;
Tong, Ling;
Zhu, Junqiang;
Xia, Yin;
Wang, Die;
Sheng, Chuming;
Chen, Honglei;
Sun, Zhengzong;
Ma, Shunli;
Riaud, Antoine;
Xu, Zihan;
Cong, Chunxiao;
Qiu, Zhijun;
Zhou, Peng;
Xie, Yufeng;
Bian, Lifeng

Publication type:

Article

Circuit‐Level Memory Technologies and Applications based on 2D Materials.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202202371

By:

Ma, Jiahui;
Liu, Hefei;
Yang, Ning;
Zou, Jingyi;
Lin, Sen;
Zhang, Yuhao;
Zhang, Xu;
Guo, Jing;
Wang, Han

Publication type:

Article

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201916

By:

Shen, Yang;
Dong, Zuoyuan;
Sun, Yabin;
Guo, Hao;
Wu, Fan;
Li, Xianglong;
Tang, Jun;
Liu, Jun;
Wu, Xing;
Tian, He;
Ren, Tian‐Ling

Publication type:

Article

Integrated Memory Devices Based on 2D Materials.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201880

By:

Xue, Fei;
Zhang, Chenhui;
Ma, Yinchang;
Wen, Yan;
He, Xin;
Yu, Bin;
Zhang, Xixiang

Publication type:

Article

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201691

By:

Pasadas, Francisco;
Feijoo, Pedro C.;
Mavredakis, Nikolaos;
Pacheco‐Sanchez, Aníbal;
Chaves, Ferney A.;
Jiménez, David

Publication type:

Article

2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201630

By:

Chen, Yulong;
Tian, Ziao;
Wang, Xiang;
Ran, Nian;
Wang, Chen;
Cui, Anyang;
Lu, Huihui;
Zhang, Miao;
Xue, Zhongying;
Mei, Yongfeng;
Chu, Paul K.;
Liu, Jianjun;
Hu, Zhigao;
Di, Zengfeng

Publication type:

Article

Production of Large‐Area Nucleus‐Free Single‐Crystal Graphene‐Mesh Metamaterials with Zigzag Edges.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201253

By:

Tian, Bo;
Li, Junzhu;
Samad, Abdus;
Schwingenschlögl, Udo;
Lanza, Mario;
Zhang, Xixiang

Publication type:

Article

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202108025

By:

Yan, Xiaodong;
Qian, Justin H.;
Sangwan, Vinod K.;
Hersam, Mark C.

Publication type:

Article

Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202109796

By:

Schram, Tom;
Sutar, Surajit;
Radu, Iuliana;
Asselberghs, Inge

Publication type:

Article

Multilayer Reservoir Computing Based on Ferroelectric α‐In2Se3 for Hierarchical Information Processing.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202108826

By:

Liu, Keqin;
Dang, Bingjie;
Zhang, Teng;
Yang, Zhen;
Bao, Lin;
Xu, Liying;
Cheng, Caidie;
Huang, Ru;
Yang, Yuchao

Publication type:

Article

Graphene‐Based Microwave Circuits: A Review.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202108473

By:

Saeed, Mohamed;
Palacios, Paula;
Wei, Muh‐Dey;
Baskent, Eyyub;
Fan, Chun‐Yu;
Uzlu, Burkay;
Wang, Kun‐Ta;
Hemmetter, Andreas;
Wang, Zhenxing;
Neumaier, Daniel;
Lemme, Max C.;
Negra, Renato

Publication type:

Article

Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202108469

By:

Reato, Eros;
Palacios, Paula;
Uzlu, Burkay;
Saeed, Mohamed;
Grundmann, Annika;
Wang, Zhenyu;
Schneider, Daniel S.;
Wang, Zhenxing;
Heuken, Michael;
Kalisch, Holger;
Vescan, Andrei;
Radenovic, Alexandra;
Kis, Andras;
Neumaier, Daniel;
Negra, Renato;
Lemme, Max C.

Publication type:

Article

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201082

By:

Waltl, Michael;
Knobloch, Theresia;
Tselios, Konstantinos;
Filipovic, Lado;
Stampfer, Bernhard;
Hernandez, Yoanlys;
Waldhör, Dominic;
Illarionov, Yury;
Kaczer, Ben;
Grasser, Tibor

Publication type:

Article

2D Materials‐Based Static Random‐Access Memory.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202107894

By:

Liu, Chang‐Ju;
Wan, Yi;
Li, Lain‐Jong;
Lin, Chih‐Pin;
Hou, Tuo‐Hung;
Huang, Zi‐Yuan;
Hu, Vita Pi‐Ho

Publication type:

Article

A Reconfigurable Two‐WSe2‐Transistor Synaptic Cell for Reinforcement Learning.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202107754

By:

Zhou, Yue;
Wang, Yasai;
Zhuge, Fuwei;
Guo, Jianmiao;
Ma, Sijie;
Wang, Jingli;
Tang, Zijian;
Li, Yi;
Miao, Xiangshui;
He, Yuhui;
Chai, Yang

Publication type:

Article

High‐Yield Ti3C2Tx MXene–MoS2 Integrated Circuits.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202107370

By:

Xu, Xiangming;
Guo, Tianchao;
Hota, Mrinal K.;
Kim, Hyunho;
Zheng, Dongxing;
Liu, Chen;
Hedhili, Mohamed Nejib;
Alsaadi, Rajeh S.;
Zhang, Xixiang;
Alshareef, Husam N.

Publication type:

Article

The Road for 2D Semiconductors in the Silicon Age.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202106886

By:

Wang, Shuiyuan;
Liu, Xiaoxian;
Zhou, Peng

Publication type:

Article

Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202106321

By:

Xiong, Xiong;
Kang, Jiyang;
Liu, Shiyuan;
Tong, Anyu;
Fu, Tianyue;
Li, Xuefei;
Huang, Ru;
Wu, Yanqing

Publication type:

Article

Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202104138

By:

Zheng, Wenwen;
Saiz, Fernan;
Shen, Yaqing;
Zhu, Kaichen;
Liu, Yingwen;
McAleese, Clifford;
Conran, Ben;
Wang, Xiaochen;
Lanza, Mario

Publication type:

Article

Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase‐Transition‐Induced Growth.

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202103286

By:

Sohn, Ahrum;
Kim, Changhyun;
Jung, Jae‐Hwan;
Kim, Jung Hwa;
Byun, Kyung‐Eun;
Cho, Yeonchoo;
Zhao, Pin;
Kim, Sang Won;
Seol, Minsu;
Lee, Zonghoon;
Kim, Sang‐Woo;
Shin, Hyeon‐Jin

Publication type:

Article

Works matching IS 09359648 AND DT 2022 AND VI 34 AND IP 48

2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics (Adv. Mater. 48/2022).

Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors (Adv. Mater. 48/2022).

Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors (Adv. Mater. 48/2022).

Multilayer Reservoir Computing Based on Ferroelectric α‐In<sub>2</sub>Se<sub>3</sub> for Hierarchical Information Processing (Adv. Mater. 48/2022).

The Road for 2D Semiconductors in the Silicon Age (Adv. Mater. 48/2022).

Masthead: (Adv. Mater. 48/2022).

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems (Adv. Mater. 48/2022).

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms (Adv. Mater. 48/2022).

Electronic Circuits made of 2D Materials.

A Sparse and Spike‐Timing‐Based Adaptive Photoencoder for Augmenting Machine Vision for Spiking Neural Networks.

Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors.

Circuit‐Level Memory Technologies and Applications based on 2D Materials.

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms.

Integrated Memory Devices Based on 2D Materials.

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors.

2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics.

Production of Large‐Area Nucleus‐Free Single‐Crystal Graphene‐Mesh Metamaterials with Zigzag Edges.

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems.

Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits.

Multilayer Reservoir Computing Based on Ferroelectric α‐In<sub>2</sub>Se<sub>3</sub> for Hierarchical Information Processing.

Graphene‐Based Microwave Circuits: A Review.

Zero‐Bias Power‐Detector Circuits based on MoS<sub>2</sub> Field‐Effect Transistors on Wafer‐Scale Flexible Substrates.

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

2D Materials‐Based Static Random‐Access Memory.

A Reconfigurable Two‐WSe<sub>2</sub>‐Transistor Synaptic Cell for Reinforcement Learning.

High‐Yield Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene–MoS<sub>2</sub> Integrated Circuits.

The Road for 2D Semiconductors in the Silicon Age.

Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors.

Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology.

Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase‐Transition‐Induced Growth.