Works matching IS 09359648 AND DT 2022 AND VI 34 AND IP 48

Results: 30

2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics (Adv. Mater. 48/2022).
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270336
By:
- Chen, Yulong;
- Tian, Ziao;
- Wang, Xiang;
- Ran, Nian;
- Wang, Chen;
- Cui, Anyang;
- Lu, Huihui;
- Zhang, Miao;
- Xue, Zhongying;
- Mei, Yongfeng;
- Chu, Paul K.;
- Liu, Jianjun;
- Hu, Zhigao;
- Di, Zengfeng
Publication type:
Article
Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors (Adv. Mater. 48/2022).
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270335
By:
- Xiong, Xiong;
- Kang, Jiyang;
- Liu, Shiyuan;
- Tong, Anyu;
- Fu, Tianyue;
- Li, Xuefei;
- Huang, Ru;
- Wu, Yanqing
Publication type:
Article
Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors (Adv. Mater. 48/2022).
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270334
By:
- Wang, Xinyu;
- Chen, Xinyu;
- Ma, Jingyi;
- Gou, Saifei;
- Guo, Xiaojiao;
- Tong, Ling;
- Zhu, Junqiang;
- Xia, Yin;
- Wang, Die;
- Sheng, Chuming;
- Chen, Honglei;
- Sun, Zhengzong;
- Ma, Shunli;
- Riaud, Antoine;
- Xu, Zihan;
- Cong, Chunxiao;
- Qiu, Zhijun;
- Zhou, Peng;
- Xie, Yufeng;
- Bian, Lifeng
Publication type:
Article
Multilayer Reservoir Computing Based on Ferroelectric α‐In2Se3 for Hierarchical Information Processing (Adv. Mater. 48/2022).
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202108826
By:
- Liu, Keqin;
- Dang, Bingjie;
- Zhang, Teng;
- Yang, Zhen;
- Bao, Lin;
- Xu, Liying;
- Cheng, Caidie;
- Huang, Ru;
- Yang, Yuchao
Publication type:
Article
The Road for 2D Semiconductors in the Silicon Age (Adv. Mater. 48/2022).
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270332
By:
- Wang, Shuiyuan;
- Liu, Xiaoxian;
- Zhou, Peng
Publication type:
Article
Masthead: (Adv. Mater. 48/2022).
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270331
Publication type:
Article
Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems (Adv. Mater. 48/2022).
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270330
By:
- Yan, Xiaodong;
- Qian, Justin H.;
- Sangwan, Vinod K.;
- Hersam, Mark C.
Publication type:
Article
The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms (Adv. Mater. 48/2022).
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202270329
By:
- Shen, Yang;
- Dong, Zuoyuan;
- Sun, Yabin;
- Guo, Hao;
- Wu, Fan;
- Li, Xianglong;
- Tang, Jun;
- Liu, Jun;
- Wu, Xing;
- Tian, He;
- Ren, Tian‐Ling
Publication type:
Article
Electronic Circuits made of 2D Materials.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202207843
By:
- Lanza, Mario;
- Radu, Iuliana
Publication type:
Article
A Sparse and Spike‐Timing‐Based Adaptive Photoencoder for Augmenting Machine Vision for Spiking Neural Networks.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202202535
By:
- Subbulakshmi Radhakrishnan, Shiva;
- Chakrabarti, Shakya;
- Sen, Dipanjan;
- Das, Mayukh;
- Schranghamer, Thomas F.;
- Sebastian, Amritanand;
- Das, Saptarshi
Publication type:
Article
Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202202472
By:
- Wang, Xinyu;
- Chen, Xinyu;
- Ma, Jingyi;
- Gou, Saifei;
- Guo, Xiaojiao;
- Tong, Ling;
- Zhu, Junqiang;
- Xia, Yin;
- Wang, Die;
- Sheng, Chuming;
- Chen, Honglei;
- Sun, Zhengzong;
- Ma, Shunli;
- Riaud, Antoine;
- Xu, Zihan;
- Cong, Chunxiao;
- Qiu, Zhijun;
- Zhou, Peng;
- Xie, Yufeng;
- Bian, Lifeng
Publication type:
Article
Circuit‐Level Memory Technologies and Applications based on 2D Materials.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202202371
By:
- Ma, Jiahui;
- Liu, Hefei;
- Yang, Ning;
- Zou, Jingyi;
- Lin, Sen;
- Zhang, Yuhao;
- Zhang, Xu;
- Guo, Jing;
- Wang, Han
Publication type:
Article
The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201916
By:
- Shen, Yang;
- Dong, Zuoyuan;
- Sun, Yabin;
- Guo, Hao;
- Wu, Fan;
- Li, Xianglong;
- Tang, Jun;
- Liu, Jun;
- Wu, Xing;
- Tian, He;
- Ren, Tian‐Ling
Publication type:
Article
Integrated Memory Devices Based on 2D Materials.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201880
By:
- Xue, Fei;
- Zhang, Chenhui;
- Ma, Yinchang;
- Wen, Yan;
- He, Xin;
- Yu, Bin;
- Zhang, Xixiang
Publication type:
Article
Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201691
By:
- Pasadas, Francisco;
- Feijoo, Pedro C.;
- Mavredakis, Nikolaos;
- Pacheco‐Sanchez, Aníbal;
- Chaves, Ferney A.;
- Jiménez, David
Publication type:
Article
2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201630
By:
- Chen, Yulong;
- Tian, Ziao;
- Wang, Xiang;
- Ran, Nian;
- Wang, Chen;
- Cui, Anyang;
- Lu, Huihui;
- Zhang, Miao;
- Xue, Zhongying;
- Mei, Yongfeng;
- Chu, Paul K.;
- Liu, Jianjun;
- Hu, Zhigao;
- Di, Zengfeng
Publication type:
Article
Production of Large‐Area Nucleus‐Free Single‐Crystal Graphene‐Mesh Metamaterials with Zigzag Edges.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201253
By:
- Tian, Bo;
- Li, Junzhu;
- Samad, Abdus;
- Schwingenschlögl, Udo;
- Lanza, Mario;
- Zhang, Xixiang
Publication type:
Article
Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202108025
By:
- Yan, Xiaodong;
- Qian, Justin H.;
- Sangwan, Vinod K.;
- Hersam, Mark C.
Publication type:
Article
Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202109796
By:
- Schram, Tom;
- Sutar, Surajit;
- Radu, Iuliana;
- Asselberghs, Inge
Publication type:
Article
Multilayer Reservoir Computing Based on Ferroelectric α‐In2Se3 for Hierarchical Information Processing.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202108826
By:
- Liu, Keqin;
- Dang, Bingjie;
- Zhang, Teng;
- Yang, Zhen;
- Bao, Lin;
- Xu, Liying;
- Cheng, Caidie;
- Huang, Ru;
- Yang, Yuchao
Publication type:
Article
Graphene‐Based Microwave Circuits: A Review.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202108473
By:
- Saeed, Mohamed;
- Palacios, Paula;
- Wei, Muh‐Dey;
- Baskent, Eyyub;
- Fan, Chun‐Yu;
- Uzlu, Burkay;
- Wang, Kun‐Ta;
- Hemmetter, Andreas;
- Wang, Zhenxing;
- Neumaier, Daniel;
- Lemme, Max C.;
- Negra, Renato
Publication type:
Article
Zero‐Bias Power‐Detector Circuits based on MoS2 Field‐Effect Transistors on Wafer‐Scale Flexible Substrates.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202108469
By:
- Reato, Eros;
- Palacios, Paula;
- Uzlu, Burkay;
- Saeed, Mohamed;
- Grundmann, Annika;
- Wang, Zhenyu;
- Schneider, Daniel S.;
- Wang, Zhenxing;
- Heuken, Michael;
- Kalisch, Holger;
- Vescan, Andrei;
- Radenovic, Alexandra;
- Kis, Andras;
- Neumaier, Daniel;
- Negra, Renato;
- Lemme, Max C.
Publication type:
Article
Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201082
By:
- Waltl, Michael;
- Knobloch, Theresia;
- Tselios, Konstantinos;
- Filipovic, Lado;
- Stampfer, Bernhard;
- Hernandez, Yoanlys;
- Waldhör, Dominic;
- Illarionov, Yury;
- Kaczer, Ben;
- Grasser, Tibor
Publication type:
Article
2D Materials‐Based Static Random‐Access Memory.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202107894
By:
- Liu, Chang‐Ju;
- Wan, Yi;
- Li, Lain‐Jong;
- Lin, Chih‐Pin;
- Hou, Tuo‐Hung;
- Huang, Zi‐Yuan;
- Hu, Vita Pi‐Ho
Publication type:
Article
A Reconfigurable Two‐WSe2‐Transistor Synaptic Cell for Reinforcement Learning.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202107754
By:
- Zhou, Yue;
- Wang, Yasai;
- Zhuge, Fuwei;
- Guo, Jianmiao;
- Ma, Sijie;
- Wang, Jingli;
- Tang, Zijian;
- Li, Yi;
- Miao, Xiangshui;
- He, Yuhui;
- Chai, Yang
Publication type:
Article
High‐Yield Ti3C2Tx MXene–MoS2 Integrated Circuits.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202107370
By:
- Xu, Xiangming;
- Guo, Tianchao;
- Hota, Mrinal K.;
- Kim, Hyunho;
- Zheng, Dongxing;
- Liu, Chen;
- Hedhili, Mohamed Nejib;
- Alsaadi, Rajeh S.;
- Zhang, Xixiang;
- Alshareef, Husam N.
Publication type:
Article
The Road for 2D Semiconductors in the Silicon Age.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202106886
By:
- Wang, Shuiyuan;
- Liu, Xiaoxian;
- Zhou, Peng
Publication type:
Article
Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202106321
By:
- Xiong, Xiong;
- Kang, Jiyang;
- Liu, Shiyuan;
- Tong, Anyu;
- Fu, Tianyue;
- Li, Xuefei;
- Huang, Ru;
- Wu, Yanqing
Publication type:
Article
Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202104138
By:
- Zheng, Wenwen;
- Saiz, Fernan;
- Shen, Yaqing;
- Zhu, Kaichen;
- Liu, Yingwen;
- McAleese, Clifford;
- Conran, Ben;
- Wang, Xiaochen;
- Lanza, Mario
Publication type:
Article
Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase‐Transition‐Induced Growth.
Published in:
Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202103286
By:
- Sohn, Ahrum;
- Kim, Changhyun;
- Jung, Jae‐Hwan;
- Kim, Jung Hwa;
- Byun, Kyung‐Eun;
- Cho, Yeonchoo;
- Zhao, Pin;
- Kim, Sang Won;
- Seol, Minsu;
- Lee, Zonghoon;
- Kim, Sang‐Woo;
- Shin, Hyeon‐Jin
Publication type:
Article

Works matching IS 09359648 AND DT 2022 AND VI 34 AND IP 48

2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics (Adv. Mater. 48/2022).

Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors (Adv. Mater. 48/2022).

Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors (Adv. Mater. 48/2022).

Multilayer Reservoir Computing Based on Ferroelectric α‐In<sub>2</sub>Se<sub>3</sub> for Hierarchical Information Processing (Adv. Mater. 48/2022).

The Road for 2D Semiconductors in the Silicon Age (Adv. Mater. 48/2022).

Masthead: (Adv. Mater. 48/2022).

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems (Adv. Mater. 48/2022).

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms (Adv. Mater. 48/2022).

Electronic Circuits made of 2D Materials.

A Sparse and Spike‐Timing‐Based Adaptive Photoencoder for Augmenting Machine Vision for Spiking Neural Networks.

Pass‐Transistor Logic Circuits Based on Wafer‐Scale 2D Semiconductors.

Circuit‐Level Memory Technologies and Applications based on 2D Materials.

The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms.

Integrated Memory Devices Based on 2D Materials.

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors.

2D Transition Metal Dichalcogenide with Increased Entropy for Piezoelectric Electronics.

Production of Large‐Area Nucleus‐Free Single‐Crystal Graphene‐Mesh Metamaterials with Zigzag Edges.

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems.

Challenges of Wafer‐Scale Integration of 2D Semiconductors for High‐Performance Transistor Circuits.

Multilayer Reservoir Computing Based on Ferroelectric α‐In<sub>2</sub>Se<sub>3</sub> for Hierarchical Information Processing.

Graphene‐Based Microwave Circuits: A Review.

Zero‐Bias Power‐Detector Circuits based on MoS<sub>2</sub> Field‐Effect Transistors on Wafer‐Scale Flexible Substrates.

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

2D Materials‐Based Static Random‐Access Memory.

A Reconfigurable Two‐WSe<sub>2</sub>‐Transistor Synaptic Cell for Reinforcement Learning.

High‐Yield Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub> MXene–MoS<sub>2</sub> Integrated Circuits.

The Road for 2D Semiconductors in the Silicon Age.

Nonvolatile Logic and Ternary Content‐Addressable Memory Based on Complementary Black Phosphorus and Rhenium Disulfide Transistors.

Defect‐Free Metal Deposition on 2D Materials via Inkjet Printing Technology.

Precise Layer Control and Electronic State Modulation of a Transition Metal Dichalcogenide via Phase‐Transition‐Induced Growth.