Works matching IS 09359648 AND DT 2012 AND VI 24 AND IP 26


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    GaS and GaSe Ultrathin Layer Transistors.

    Published in:
    Advanced Materials, 2012, v. 24, n. 26, p. 3549, doi. 10.1002/adma.201201361
    By:
    • Late, Dattatray J.;
    • Liu, Bin;
    • Luo, Jiajun;
    • Yan, Aiming;
    • Matte, H. S. S. Ramakrishna;
    • Grayson, Matthew;
    • Rao, C. N. R.;
    • Dravid, Vinayak P.
    Publication type:
    Article
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