Works matching DE "METAL oxide semiconductor capacitors"

Results: 150

Morphological, Optical, and Electrical Properties of a MOS Capacitor Based on Rare Earth Oxide and p-Porous GaAs.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 10, p. 6412, doi. 10.1007/s11664-024-11309-0

By:

Saghrouni, Hayet;
Beji, Lotfi

Publication type:

Article

Solid state thermal decomposition synthesis of CuO nanoparticles from coordinated pyrazolopyridine as novel precursors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 3, p. 2923, doi. 10.1007/s10854-016-5877-3

By:

Abdel-Monem, Yasser;
Emam, Sanaa;
Okda, Hager

Publication type:

Article

Effect of zero bias Gamma ray irradiation on HfO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12796, doi. 10.1007/s10854-016-5412-6

By:

Maurya, Savita

Publication type:

Article

A detailed study on the frequency-dependent electrical characteristics of Al/HfSiO/p-Si MOS capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 13154, doi. 10.1007/s10854-016-5461-x

By:

Lok, R.;
Kaya, S.;
Karacali, H.;
Yilmaz, E.

Publication type:

Article

Inductive type properties of FeCoZr-CaF and FeCoZr-PZT nanocomposites.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 9, p. 6450, doi. 10.1007/s10854-015-3236-4

By:

Koltunowicz, Tomasz

Publication type:

Article

Stability of TaRh as a potential diffusion barrier for Cu metallization: capacitance-voltage tests after bias temperature stress.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 2, p. 897, doi. 10.1007/s10854-013-1662-8

By:

Dalili, Neda;
Ivey, Douglas

Publication type:

Article

Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 10, p. 14761, doi. 10.1002/er.6752

By:

Onik, Tahsin Ahmed Mozaffor;
Hawari, Huzein Fahmi;
Sabri, Mohd Faizul Mohd;
Wong, Yew Hoong

Publication type:

Article

Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitrided AlZrO based MOS capacitor.

Published in:

International Journal of Energy Research, 2021, v. 45, n. 3, p. 3838, doi. 10.1002/er.6037

By:

Quah, Hock Jin;
Hassan, Zainuriah;
Lim, Way Foong

Publication type:

Article

Transparent, Multivalued Transistors Enabled By Area‐Selective Optical Doping on Ga‐Doped IZTO Thin Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200771

By:

Kim, Jihyun;
Lee, Ju Hyeon;
Jung, Myeongjin;
Kim, Jae Hyung;
Park, Jung‐Min;
Kim, Han‐Ki;
Kang, Joohoon

Publication type:

Article

Programmable Photovoltaics of Metal‐Oxide‐Semiconductor Junction.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200672

By:

Zhang, Duan;
Xu, Shuting;
Xu, Zheqi;
Qi, Zhiying;
Niu, Yue;
Yin, Jianbo;
Guo, Yao

Publication type:

Article

In Situ Dielectric Al2O3/β‐Ga2O3 Interfaces Grown Using Metal–Organic Chemical Vapor Deposition.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 11, p. 1, doi. 10.1002/aelm.202100333

By:

Roy, Saurav;
Chmielewski, Adrian E.;
Bhattacharyya, Arkka;
Ranga, Praneeth;
Sun, Rujun;
Scarpulla, Michael A.;
Alem, Nasim;
Krishnamoorthy, Sriram

Publication type:

Article

Boosting the Performance of Liquid‐Gated Nanotransistor Biosensors Using Single‐Trap Phenomena.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 4, p. 1, doi. 10.1002/aelm.202000858

By:

Kutovyi, Yurii;
Piatnytsia, Volodymyr;
Boichuk, Nazarii;
Zadorozhnyi, Ihor;
Li, Jie;
Petrychuk, Mykhailo;
Vitusevich, Svetlana

Publication type:

Article

Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202000902

By:

Liu, Qian;
Xue, Qiang;
Wang, Yanbin;
Wei, Xianhua;
Hao, Jianhua

Publication type:

Article

Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700543

By:

Jiang, Shanshan;
He, Gang;
Liu, Mao;
Zhu, Li;
Liang, Shuang;
Li, Wendong;
Sun, Zhaoqi;
Tian, Mingliang

Publication type:

Article

Wafer Scale Transfer of Ultrathin Silicon Chips on Flexible Substrates for High Performance Bendable Systems.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 4, p. 1, doi. 10.1002/aelm.201700277

By:

Navaraj, William Taube;
Gupta, Shoubhik;
Lorenzelli, Leandro;
Dahiya, Ravinder

Publication type:

Article

20.2L: Late-News Paper: A 4-inch QVGA Flexible AMOLED Driven by Solution-Processed Metal Oxide TFTs.

Published in:

SID Symposium Digest of Technical Papers, 2014, v. 45, n. 1, p. 252, doi. 10.1002/j.2168-0159.2014.tb00069.x

By:

Lin, Liang‐Yu;
Cheng, Chun‐Cheng;
Liu, Chu‐Yu;
Chiang, Min‐Feng;
Wu, Po‐Hsien;
Lee, Meng‐Ting;
Chen, Chien‐Ying;
Chan, Chih‐Cheng;
Lin, Chen‐Chi;
Chang, Chih‐Hsiang

Publication type:

Article

Photo-Sensor Thin Film Transistor based on Double Metal-Oxide Layer for In-cell Remote Touch Screen.

Published in:

SID Symposium Digest of Technical Papers, 2012, v. 43, n. 1, p. 334, doi. 10.1002/j.2168-0159.2012.tb05783.x

By:

Ahn, Seung-eon;
Jeon, Sanghun;
Song, Ihun;
Jeon, Yongwoo;
Kim, Young;
Kim, Changjung;
Lim, Junhyung;
Jeong, Wooho;
Goh, Joonchul;
Yeon, Seongjin;
Lee, Cheolgon;
Kim, Jong-hee;
Lee, Je-hun;
Song, Junho;
Nathan, Arokia;
Lee, Sungsik;
Chung, U-in

Publication type:

Article

A super class-AB adaptive biasing amplifier in 65-nm CMOS technology.

Published in:

International Journal of Electronics Letters, 2018, v. 6, n. 3, p. 302, doi. 10.1080/21681724.2017.1376710

By:

Akbari, Meysam;
Hashemipour, Omid

Publication type:

Article

High-k Gate Dielectrics of Thin Films with its Technological Applications - A Review.

Published in:: International Journal of Pure & Applied Sciences & Technology, 2011, v. 4, n. 2, p. 105
Publication type:: Article

Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer.

Published in:

Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 9, p. n/a, doi. 10.1002/pssr.201700180

By:

Liu, Li Ning;
Choi, Hoi Wai;
Xu, Jing Ping;
Lai, Pui To

Publication type:

Article

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal-oxide-semiconductor capacitor.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 9, p. 703, doi. 10.1002/pssr.201600227

By:

Liu, Li Ning;
Choi, Hoi Wai;
Xu, Jing Ping;
Lai, Pui To

Publication type:

Article

Low-cost high-quality crystalline germanium based flexible devices.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 9, p. 794, doi. 10.1002/pssr.201409257

By:

Nassar, Joanna M.;
Hussain, Aftab M.;
Rojas, Jhonathan P.;
Hussain, Muhammad M.

Publication type:

Article

The TDDB Characteristics of Ultra-Thin Gate Oxide MOS Capacitors under Constant Voltage Stress and Substrate Hot-Carrier Injection.

Published in:

Advances in Condensed Matter Physics, 2018, p. 1, doi. 10.1155/2018/5483756

By:

Shen, Jingyu;
Tan, Can;
Jiang, Rui;
Li, Wei;
Fan, Xue;
Li, Jianjun;
Wu, Jingping

Publication type:

Article

Warpage Reduction for Power MOSFET Wafers.

Published in:

Electrica, 2021, v. 21, n. 2, p. 173, doi. 10.5152/electrica.2021.21019

By:

Kim Ho Yeap;
Nisar, Humaira;
Dakulagi, Veerendra

Publication type:

Article

Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Pulsed Current-Voltage Characterization Technique: Design and Discussion.

Published in:

Instruments & Experimental Techniques, 2023, v. 66, n. 6, p. 1085, doi. 10.1134/S0020441223050330

By:

Messaoud, Dhia Elhak;
Djezzar, Boualem;
Boubaaya, Mohamed;
Benabdelmoumene, Abdelmadjid;
Zatout, Boumediene;
Chenouf, Amel;
Zitouni, Abdelkader

Publication type:

Article

Electrical and dielectric parameters in TiO2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-99354-1

By:

Singh, H. Manas;
Lim, Ying Ying;
Chinnamuthu, P.

Publication type:

Article

Optoelectronic Transimpedance Converter Based on MOS Photovaricap for High Resistive Gas Sensors.

Published in:

Armenian Journal of Physics, 2023, v. 16, n. 4, p. 119, doi. 10.54503/18291171-2023.16.4-119

By:

Semerjyan, B. O.;
Kananov, D. A.;
Alexanyan, M. S.

Publication type:

Article

Dispersive Transport of Hydrogen in MOS Structures after Exposure to Ionizing Radiation.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1215, doi. 10.1134/S1063782620100036

By:

Aleksandrov, O. V.

Publication type:

Article

Study of p-GaN Gate MOS-HEMT with Al2O3 Insulator for High-Power Applications.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 4, p. 2865, doi. 10.1007/s11664-023-10252-w

By:

Huang, Kuan Ning;
Lin, Yueh Chin;
Wu, Chieh Ying;
Lee, Jin Hwa;
Hsu, Chia Chieh;
Yao, Jing Neng;
Chien, Chao Hsin;
Chang, Edward Yi

Publication type:

Article

A Superjunction Insulated Gate Bipolar Transistor with Embedded Self-biased N-Type Metal–Oxide–Semiconductor Field-Effect Transistor.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 3, p. 2177, doi. 10.1007/s11664-022-10148-1

By:

Wu, Lijuan;
Zhang, Banghui;
Deng, Gaoqiang;
Song, Xuanting;
Liu, Heng;
Liu, Qing;
Qiu, Tao

Publication type:

Article

Solution-Processed HfO2/Y2O3 Multilayer Si-Based MOS Capacitors Photoactivated by Deep-Ultraviolet Radiation.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 9, p. 4944, doi. 10.1007/s11664-022-09738-w

By:

Almaimouni, Ashwag;
Kutbee, Arwa;
Mudhaffar, Asmaa;
Al-Jawhari, Hala

Publication type:

Article

Electrical and Dielectric Properties of a Dy2O3 MOS Capacitor.

Published in:

Journal of Electronic Materials, 2022, v. 51, n. 3, p. 1250, doi. 10.1007/s11664-021-09391-9

By:

Saghrouni, H.;
Cherif, A.;
Beji, L.

Publication type:

Article

Electrical Properties of 6 nm to 19 nm Thick Polyethylene Oxide Capacitors for Ion/Electron Functional Devices.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 6, p. 2956, doi. 10.1007/s11664-020-08716-4

By:

Gonzalez-Serrano, Karla Adriana;
Seabaugh, Alan C.

Publication type:

Article

Characterization and Electrical Response to Humidity of Sintered Polymeric Electrospun Fibers of Vanadium Oxide-(TiO2/WO3).

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 5, p. 2710, doi. 10.1007/s11664-018-6112-1

By:

Araújo, E. S.;
Libardi, J.;
Faia, P. M.;
de Oliveira, H. P.

Publication type:

Article

An Investigation of Quantum Dot Super Lattice Use in Nonvolatile Memory and Transistors.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 2, p. 1371, doi. 10.1007/s11664-017-5951-5

By:

Mirdha, P.;
Parthasarathy, B.;
Kondo, J.;
Chan, P.-Y.;
Heller, E.;
Jain, F.

Publication type:

Article

Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 4, p. 2296, doi. 10.1007/s11664-016-5262-2

By:

Jiao, C.;
Ahyi, A.;
Dhar, S.;
Morisette, D.;
Myers-Ward, R.

Publication type:

Article

Effect of Remote Oxygen Scavenging on Electrical Properties of Ge-Based Metal-Oxide-Semiconductor Capacitors.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 1, p. 386, doi. 10.1007/s11664-016-4841-6

By:

Fadida, Sivan;
Nyns, Laura;
Elshocht, Sven;
Eizenberg, Moshe

Publication type:

Article

Study of Hf-Ti-O Thin Film as High- k Gate Dielectric and Application for ETSOI MOSFETs.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 8, p. 4407, doi. 10.1007/s11664-016-4601-7

By:

Chen, Xiaoqiang;
Zhao, Hongbin;
Xiong, Yuhua;
Wei, Feng;
Du, Jun;
Tang, Zhaoyun;
Tang, Bo;
Yan, Jiang

Publication type:

Article

Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2172, doi. 10.1007/s11664-015-4296-1

By:

Jena, Kanjalochan;
Swain, Raghunandan;
Lenka, T.

Publication type:

Article

Study of Shallow Backside Junctions for Backside Illumination of CMOS Image Sensors.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 11, p. 3933, doi. 10.1007/s11664-014-3336-6

By:

Choi, Chung;
Yeo, Sang;
Kim, Dohwan;
Kim, Jongchae;
Yoo, Kyung;
Lee, Hyuck

Publication type:

Article

Effects of HO Pretreatment on the Capacitance-Voltage Characteristics of Atomic-Layer-Deposited AlO on Ga-Face GaN Metal-Oxide-Semiconductor Capacitors.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 33, doi. 10.1007/s11664-012-2246-8

By:

Liu, Xiang;
Yeluri, Ramya;
Lu, Jing;
Mishra, Umesh

Publication type:

Article

The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 14, p. 11227, doi. 10.1007/s10854-022-08097-w

By:

Patil, Sumit R.;
Barhate, Viral N.;
Patil, Vilas S.;
Agrawal, Khushabu S.;
Mahajan, Ashok M.

Publication type:

Article

Correction to: Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor.

Published in:

2021

By:

Türkay, Sema;
Tataroğlu, Adem

Publication type:

Correction Notice

The current–voltage characteristics of V2O5/n-Si Schottky diodes formed with different metals.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20284, doi. 10.1007/s10854-021-06534-w

By:

Kaya, Meltem Donmez;
Sertel, Buse Comert;
Sonmez, Nihan Akin;
Cakmak, Mehmet;
Ozcelik, Suleyman

Publication type:

Article

Complex dielectric permittivity, electric modulus and electrical conductivity analysis of Au/Si3N4/p-GaAs (MOS) capacitor.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 9, p. 11418, doi. 10.1007/s10854-021-05349-z

By:

Türkay, Sema;
Tataroğlu, Adem

Publication type:

Article

Effects of the oxide/interface traps on the electrical characteristics in Al/Yb2O3/SiO2/n-Si/Al MOS capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 7, p. 9231, doi. 10.1007/s10854-021-05588-0

By:

Morkoç, Berk;
Kahraman, Ayşegül;
Yılmaz, Ercan

Publication type:

Article

Selective photosensitivity of metal–oxide–semiconductor structures with SiOx layer annealed at high temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 20, p. 17412, doi. 10.1007/s10854-020-04297-4

By:

Paz, J.;
Nedev, N.;
Nesheva, D.;
Curiel, M.;
Manolov, E.;
Valdez, B.;
Perez, O.;
Mateos, D.;
Nedev, R.;
Arias, A.;
Ramirez, M.;
Dzhurkov, V.

Publication type:

Article

Impact of SiO2 interfacial layer on the electrical characteristics of Al/Al2O3/SiO2/n-Si metal–oxide–semiconductor capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 15, p. 12372, doi. 10.1007/s10854-020-03783-z

By:

Kimbugwe, Nakibinge Tawfiq;
Yilmaz, Ercan

Publication type:

Article

Influence of finite size and surface effects on the structural, electrical and magnetic properties of nanostructured nickel oxide.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 7, p. 5769, doi. 10.1007/s10854-020-03147-7

By:

Sheena, P. A.;
Hitha, H.;
Sreedevi, A.;
Varghese, Thomas

Publication type:

Article

Suppression of Oxide and Interface Charge Density in Radio Frequency Sputtered Ta2O5 Thin Films.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 2, p. 1, doi. 10.1002/pssa.202300292

By:

Sahoo, Kiran K.;
Pradhan, Diana;
Gartia, Anurag;
Ghosh, Surya P.;
Kar, Jyoti P.

Publication type:

Article