Works matching Random access memory

Results: 3563

Indium Diffusion Behavior and Application in HfO2‐Based Conductive Bridge Random Access Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 11, p. N.PAG, doi. 10.1002/pssr.201900285

By:

Zheng, Hao-Xuan;
Shih, Chih-Cheng;
Chang, Ting-Chang;
Shih, Lin-Yi;
Shih, Yao-Kai;
Tseng, Yi-Ting;
Chen, Wen-Chung;
Huang, Wei-Chen;
Yang, Chih-Cheng;
Wu, Pei-Yu;
Huang, Hui-Chun;
Tsai, Tsung-Ming;
Sze, Simon M.

Publication type:

Article

Temperature Dependence of Electrical Properties and Conduction Mechanism of SiNx‐Based Resistive Random Access Memory.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 21, p. 1, doi. 10.1002/pssa.202300398

By:

Bai, Yifan;
Duan, Yiwei;
Qian, Mengyi;
Zhu, Shilong;
Ma, Xiaohua;
Yang, Yintang;
Gao, Haixia

Publication type:

Article

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory.

Published in:

Materials (1996-1944), 2020, v. 13, n. 16, p. 3532, doi. 10.3390/ma13163532

By:

Ou, Qiao-Feng;
Xiong, Bang-Shu;
Yu, Lei;
Wen, Jing;
Wang, Lei;
Tong, Yi

Publication type:

Article

Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra‐Thin Films.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200432

By:

Kim, Min Ju;
Martinez, Alba;
Jeong, Jaejoong;
Kim, Seongho;
Hwang, Wan Sik;
Cho, Byung Jin

Publication type:

Article

Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101083

By:

Jin, Soo‐Min;
Kim, Hea‐Jee;
Woo, Dae‐Seong;
Jung, Sung‐Mok;
Kim, Dong‐Eon;
Shim, Tae‐Hun;
Park, Jea‐Gun

Publication type:

Article

Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 3, p. 1, doi. 10.1002/aelm.202101018

By:

Park, Jong‐Whi;
Moon, Chang‐Jin;
Ju, Young‐Min;
Jang, Yong‐Rae;
Park, Simon S.;
Kim, Hak‐Sung

Publication type:

Article

Application of Resistive Random Access Memory in Hardware Security: A Review.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100536

By:

Rajendran, Gokulnath;
Banerjee, Writam;
Chattopadhyay, Anupam;
Aly, Mohamed M. Sabry

Publication type:

Article

Copolymer‐Based Flexible Resistive Random Access Memory Prepared by Initiated Chemical Vapor Deposition Process.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 10, p. 1, doi. 10.1002/aelm.202100375

By:

Jeong, Jaejoong;
Kim, Min Ju;
Hwang, Wan Sik;
Cho, Byung Jin

Publication type:

Article

Incorporation of Resistive Random Access Memory into Low‐Temperature Polysilicon Transistor with Fin‐Like Structure as 1T1R Device.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000066

By:

Huang, Wei‐Chen;
Zheng, Hao‐Xuan;
Chen, Po‐Hsun;
Chang, Ting‐Chang;
Tan, Yung‐Fang;
Lin, Shih‐Kai;
Zhang, Yong‐Ci;
Jin, Fu‐Yuan;
Wu, Chung‐Wei;
Yeh, Yu‐Hsuan;
Chou, Sheng‐Yao;
Huang, Hui‐Chun;
Chen, Yan‐Wen;
Sze, Simon M.

Publication type:

Article

SiNx‐Based Digital–Analog Hybrid Resistive Random Access Memory via Heterogeneous Integration.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 10, p. 1, doi. 10.1002/pssa.202300964

By:

Zhu, Shilong;
Gao, Haixia;
Duan, Yiwei;
Bai, Yifan;
Qiu, Xuan;
Ma, Xiaohua;
Yang, Yintang

Publication type:

Article

Elucidating Postprogramming Relaxation in Multilevel Cell‐Resistive Random Access Memory by Means of Experimental and Kinetic Monte Carlo Simulation Data.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 13, p. 1, doi. 10.1002/pssa.202100753

By:

Reganaz, Lucas;
Esmanhotto, Eduardo;
Ait Abdelkader, Nazim;
Minguet Lopez, Joel;
Castellani, Niccolo;
Rafhay, Quentin;
Deleruyelle, Damien;
Grenouillet, Laurent;
Aussenac, Francois;
Vianello, Elisa;
Andrieu, François;
Molas, Gabriel

Publication type:

Article

The enhanced electrode-dependent resistive random access memory based on BiFeO3.

Published in:

Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 5, p. 1, doi. 10.1007/s00339-023-06619-9

By:

Chuang, Ricky W.;
Shih, Chung-Chieh;
Huang, Cheng-Liang

Publication type:

Article

Sol–Gel-Processed Y 2 O 3 –Al 2 O 3 Mixed Oxide-Based Resistive Random-Access-Memory Devices.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 17, p. 2462, doi. 10.3390/nano13172462

By:

Kim, Hae-In;
Lee, Taehun;
Cho, Yoonjin;
Lee, Sangwoo;
Lee, Won-Yong;
Kim, Kwangeun;
Jang, Jaewon

Publication type:

Article

Activation Energy and Bipolar Switching Properties for the Co-Sputtering of ITO X :SiO 2 Thin Films on Resistive Random Access Memory Devices.

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 15, p. 2179, doi. 10.3390/nano13152179

By:

Chen, Kai-Huang;
Cheng, Chien-Min;
Wang, Na-Fu;
Kao, Ming-Cheng

Publication type:

Article

Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 8, p. 2085, doi. 10.3390/nano11082085

By:

Wang, Lu;
Yang, Tianyu;
Wen, Dianzhong

Publication type:

Article

Embedded Memory Hierarchy Exploration Based on Magnetic Random Access Memory.

Published in:

Journal of Low Power Electronics & Applications, 2014, v. 4, n. 3, p. 214, doi. 10.3390/jlpea4030214

By:

Cargnini, Luís Vitório;
Torres, Lionel;
Brum, Raphael Martins;
Senni, Sophiane;
Sassatelli, Gilles

Publication type:

Article

聚乙烯咔唑共价修饰黑磷纳米片及其在叠层阻变存储器中的应用.

Published in:

Journal of Functional Polymers, 2023, v. 36, n. 1, p. 31, doi. 10.14133/j.cnki.1008-9357.20220919001

By:

郑庭安;
顾敏超;
孙方成;
陈彧

Publication type:

Article

Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 1, p. 79, doi. 10.3390/electronics10010079

By:

Zahoor, Furqan;
Hussin, Fawnizu Azmadi;
Khanday, Farooq Ahmad;
Ahmad, Mohamad Radzi;
Mohd Nawi, Illani;
Ooi, Chia Yee;
Rokhani, Fakhrul Zaman

Publication type:

Article

Effects of Sm2O3 and V2O5 Film Stacking on Switching Behaviors of Resistive Random Access Memories.

Published in:

Crystals (2073-4352), 2019, v. 9, n. 6, p. 318, doi. 10.3390/cryst9060318

By:

Lin, Jian-Yang;
Wu, Kuang-Yao;
Chen, Kai-Huang

Publication type:

Article

Fabrication of Resistive Random Access Memory by Atomic Force Microscope Local Anodic Oxidation.

Published in:

NANO (1793-2920), 2015, v. 10, n. 2, p. -1, doi. 10.1142/S1793292015500289

By:

Tsai, Jeff T.H.;
Hsu, Chia-Yun;
Hsu, Chia-Hsiang;
Yang, Chu-Shou;
Lin, Tai-Yuan

Publication type:

Article

Fabrication of a Cu‐Cone‐Shaped Cation Source Inserted Conductive Bridge Random Access Memory and Its Improved Switching Reliability.

Published in:

Advanced Functional Materials, 2019, v. 29, n. 8, p. N.PAG, doi. 10.1002/adfm.201806278

By:

Kim, Hae Jin;
Park, Tae Hyung;
Yoon, Kyung Jean;
Seong, Won Mo;
Jeon, Jeong Woo;
Kwon, Young Jae;
Kim, Yumin;
Kwon, Dae Eun;
Kim, Gil Seop;
Ha, Tae Jung;
Kim, Soo Gil;
Yoon, Jung Ho;
Hwang, Cheol Seong

Publication type:

Article

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.

Published in:

Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03775-y

By:

Zahoor, Furqan;
Hussin, Fawnizu Azmadi;
Isyaku, Usman Bature;
Gupta, Shagun;
Khanday, Farooq Ahmad;
Chattopadhyay, Anupam;
Abbas, Haider

Publication type:

Article

Integrated Optical Content Addressable Memories (CAM) and Optical Random Access Memories (RAM) for Ultra-Fast Address Look-Up Operations.

Published in:

Applied Sciences (2076-3417), 2017, v. 7, n. 7, p. 700, doi. 10.3390/app7070700

By:

Vagionas, Christos;
Maniotis, Pavlos;
Pitris, Stelios;
Miliou, Amalia;
Pleros, Nikos

Publication type:

Article

A Monolithic 3-Dimensional Static Random Access Memory Containing a Feedback Field Effect Transistor.

Published in:

Micromachines, 2022, v. 13, n. 10, p. 1625, doi. 10.3390/mi13101625

By:

Oh, Jong Hyeok;
Yu, Yun Seop

Publication type:

Article

The Spectral Response of the Dual Microdisk Resonator Based on BaTiO 3 Resistive Random Access Memory.

Published in:

Micromachines, 2022, v. 13, n. 8, p. 1175, doi. 10.3390/mi13081175

By:

Chuang, Ricky Wenkuei;
Liu, Bo-Liang;
Huang, Cheng-Liang

Publication type:

Article

Analysis of Leakage Current of HfO 2 /TaO x -Based 3-D Vertical Resistive Random Access Memory Array.

Published in:

Micromachines, 2021, v. 12, n. 6, p. 614, doi. 10.3390/mi12060614

By:

Chen, Zhisheng;
Song, Renjun;
Huo, Qiang;
Ren, Qirui;
Zhang, Chenrui;
Li, Linan;
Zhang, Feng

Publication type:

Article

Glucose-based resistive random access memory for transient electronics.

Published in:

Journal of Information Display, 2019, v. 20, n. 4, p. 231, doi. 10.1080/15980316.2019.1664650

By:

Park, Sung Pyo;
Kim, Hee Jun;
Lee, Jin Hyeok;
Kim, Hyun Jae

Publication type:

Article

Low‐Energy Oxygen Plasma Injection of 2D Bi2Se3 Realizes Highly Controllable Resistive Random Access Memory.

Published in:

Advanced Functional Materials, 2022, v. 32, n. 1, p. 1, doi. 10.1002/adfm.202108455

By:

Yin, Chujun;
Gong, Chuanhui;
Tian, Siying;
Cui, Yi;
Wang, Xuepeng;
Wang, Yang;
Hu, Zhenheng;
Huang, Jianwen;
Wu, Chunyang;
Chen, Bo;
Wang, Xianfu;
Li, Chaobo

Publication type:

Article

Lifetime Improvement of 28 nm Resistive Random Access Memory Chip by Machine Learning‐Assisted Prediction Model Collaborated with Resurrection Algorithm.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 5, p. 1, doi. 10.1002/aelm.202300504

By:

Zheng, Xu;
Wu, Lizhou;
Xie, Yuanlu;
Lai, Jinru;
Sun, Wenxuan;
Yu, Jie;
Dong, Danian;
Yu, Zhaoan;
Xue, Xiaoyong;
Chen, Bing;
Yang, Yan;
Xu, Xiaoxin;
Liu, Qi;
Liu, Ming

Publication type:

Article

Influence of the Position of Local Ta Doping in SiNx Resistive Random Access Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 3, p. 1, doi. 10.1002/pssr.202200240

By:

Wu, Shuliang;
Gao, Haixia;
Sun, Yuxin;
Guo, Jingshu;
Duan, Yiwei;
Qian, Mengyi;
Ma, Xiaohua;
Yang, Yintang

Publication type:

Article

Recent Progress in Selector and Self‐Rectifying Devices for Resistive Random‐Access Memory Application.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 9, p. 1, doi. 10.1002/pssr.202100199

By:

Dongale, Tukaram D.;
Kamble, Girish U.;
Kang, Dae Yun;
Kundale, Somnath S.;
An, Ho-Myoung;
Kim, Tae Geun

Publication type:

Article

Effect of Light and Heat on Polymer‐Based Resistive Random Access Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2021, v. 15, n. 6, p. 1, doi. 10.1002/pssr.202100050

By:

Mahato, Bipul Kumar;
Medwal, Rohit;
Deen, Ghulam Roshan;
Piramanayagam, S. N.;
Rawat, Rajdeep Singh

Publication type:

Article

Quantum Dot Floating Gate Nonvolatile Random Access Memory Using Ge Quantum Dot Channel for Faster Erasing.

Published in:

International Journal of High Speed Electronics & Systems, 2018, v. 27, n. 1/2, p. N.PAG, doi. 10.1142/S0129156418400062

By:

Lingalugari, Murali;
Heller, Evan;
Parthasarathy, Barath;
Chandy, John;
Jain, Faquir

Publication type:

Article

Random Number Generators Based on Models of Random Access Memory and Confined Gas.

Published in:

Journal of Circuits, Systems & Computers, 2025, v. 34, n. 10, p. 1, doi. 10.1142/S0218126625502330

By:

Toroman, Amel;
Babić, Ranko;
Bundalo, Zlatko;
Babić, Vladana

Publication type:

Article

The Switching Characteristics in Bilayer ZnO/HfO 2 Resistive Random-Access Memory, Depending on the Top Electrode.

Published in:

Electronic Materials, 2024, v. 5, n. 2, p. 71, doi. 10.3390/electronicmat5020006

By:

Kwon, So-Yeon;
Ko, Woon-San;
Byun, Jun-Ho;
Lee, Do-Yeon;
Lee, Hi-Deok;
Lee, Ga-Won

Publication type:

Article

Multi‐Level Control of Conductive Filament Evolution and Enhanced Resistance Controllability of the Cu‐Cone Structure Embedded Conductive Bridge Random Access Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 8, p. 1, doi. 10.1002/aelm.202100209

By:

Kim, Hae Jin;
Kim, Jihun;
Park, Tae Gyun;
Yoon, Jung Ho;
Hwang, Cheol Seong

Publication type:

Article

Field‐Induced Ferroelectric Hf1‐xZrxO2 Thin Films for High‐k Dynamic Random Access Memory.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 11, p. 1, doi. 10.1002/aelm.202000631

By:

Hyun, Seung Dam;
Park, Hyeon Woo;
Park, Min Hyuk;
Lee, Young Hwan;
Lee, Yong Bin;
Kim, Beom Yong;
Kim, Ho Hyun;
Kim, Baek Su;
Hwang, Cheol Seong

Publication type:

Article

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 6, p. 1, doi. 10.1002/aelm.202000209

By:

Maikap, Siddheswar;
Banerjee, Writam

Publication type:

Article

Interface Engineering via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 4, p. N.PAG, doi. 10.1002/aelm.201800747

By:

Wu, Facai;
Si, Shuyao;
Cao, Peng;
Wei, Wei;
Zhao, Xiaolong;
Shi, Tuo;
Zhang, Xumeng;
Ma, Jianwei;
Cao, Rongrong;
Liao, Lei;
Tseng, Tseung‐Yuen;
Liu, Qi

Publication type:

Article

Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High- k Spacer Structure.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 9, p. n/a, doi. 10.1002/aelm.201700171

By:

Tseng, Yi‐Ting;
Chen, Po‐Hsun;
Chang, Ting‐Chang;
Chang, Kuan‐Chang;
Tsai, Tsung‐Ming;
Shih, Chih‐Cheng;
Huang, Hui‐Chun;
Yang, Cheng‐Chi;
Lin, Chih‐Yang;
Wu, Cheng‐Hsien;
Zheng, Hao‐Xuan;
Zhang, Shengdong;
Sze, Simon M.

Publication type:

Article

Neural network detector with sparse codes for spin transfer torque magnetic random access memory.

Published in:

Cogent Engineering, 2023, v. 10, n. 1, p. 1, doi. 10.1080/23311916.2023.2231724

By:

Chi Dinh Nguyen

Publication type:

Article

Scaling the Equivalent Oxide Thickness by Employing a TiO2 Thin Film on a ZrO2–Al2O3-Based Dielectric for Further Scaling of Dynamic Random Access Memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 10, p. 1, doi. 10.1002/pssr.201900282

By:

Soon Hyung Cha;
Cheol Hyun An;
Seong Tak Cho;
Dong-Gun Kim;
Dae Seon Kwon;
Jun Il Lim;
Woojin Jeon;
Cheol Seong Hwang

Publication type:

Article

Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 9, p. N.PAG, doi. 10.1002/pssr.201900073

By:

Wang, Hong;
Yan, Xiaobing

Publication type:

Article

A fuzzy back-propagation network approach for planning actions to shorten the cycle time of a job in dynamic random access memory manufacturing.

Published in:

Neural Computing & Applications, 2015, v. 26, n. 8, p. 1813, doi. 10.1007/s00521-015-1854-7

By:

Chen, Toly

Publication type:

Article

Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 143, doi. 10.1007/s11664-012-2270-8

By:

Aspera, Susan;
Kasai, Hideaki;
Kishi, Hirofumi;
Awaya, Nobuyoshi;
Ohnishi, Shigeo;
Tamai, Yukio

Publication type:

Article

A Novel Magnetic Random Access Memory Design Using Square Ring Elements for the Hard Layer.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 11, p. 1269, doi. 10.1007/s11664-004-0152-4

By:

Geerpuram, Dwarakanath N.;
Mani, Anand S.;
Baskaran, Vidhya Shankar

Publication type:

Article

Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 15, p. 2171, doi. 10.1002/adfm.201303274

By:

Shang, Jie;
Liu, Gang;
Yang, Huali;
Zhu, Xiaojian;
Chen, Xinxin;
Tan, Hongwei;
Hu, Benlin;
Pan, Liang;
Xue, Wuhong;
Li, Run‐Wei

Publication type:

Article

A Review of Sense Amplifiers for Static Random Access Memory.

Published in:

IETE Technical Review, 2013, v. 30, n. 1, p. 72, doi. 10.4103/0256-4602.107343

By:

Jiafeng Zhu;
Na Bai;
Jianhui Wu

Publication type:

Article

Design of Low Power Half Select Free 10T Static Random-Access Memory Cell.

Published in:

Journal of Circuits, Systems & Computers, 2021, v. 30, n. 04, p. N.PAG, doi. 10.1142/S0218126621500730

By:

Sachdeva, Ashish;
Tomar, V. K.

Publication type:

Article

Design of a Stable Low Power 11-T Static Random Access Memory Cell.

Published in:

Journal of Circuits, Systems & Computers, 2020, v. 29, n. 13, p. N.PAG, doi. 10.1142/S0218126620502060

By:

Sachdeva, Ashish;
Tomar, V. K.

Publication type:

Article