Works matching Transistors
Results: 5000
Voltage Differencing Transconductance Amplifier based Ultra-Low Power, Universal Filters and Oscillators using 32 nm Carbon Nanotube Field Effect Transistor Technology.
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- Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials, 2020, v. 50, n. 4, p. 233, doi. 10.33180/InfMIDEM2020.401
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A Transistor Based Fast Driving Circuit for Bipolar Step Motor Driving.
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- Turkish Journal of Science & Technology, 2014, v. 9, n. 1, p. 63
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电子纸用柔性薄膜晶体管的研究进展.
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- Chinese Journal of Liquid Crystal & Displays, 2022, v. 37, n. 8, p. 948, doi. 10.37188/CJLCD.2022-0102
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A Comparative Study of Radiation Doses and Treatment Area Dependence in Thermoluminescence Dosimetry Systems and Metal Oxide Semiconductor Field Effect Transistors.
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- Journal of Turgut Ozal Medical Center, 2015, v. 22, n. 1, p. 22, doi. 10.7247/jtomc.2014.1764
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- Article
Nonideal Transistors: Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors (Adv. Funct. Mater. 20/2020).
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- Advanced Functional Materials, 2020, v. 30, n. 20, p. 1, doi. 10.1002/adfm.202070129
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Microscale Organic Transistors: Fully Integrated Microscale Quasi‐2D Crystalline Molecular Field‐Effect Transistors (Adv. Funct. Mater. 36/2019).
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- Advanced Functional Materials, 2019, v. 29, n. 36, p. N.PAG, doi. 10.1002/adfm.201970250
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Análisis, modelado y simulación del ruido flicker en transistores MOS.
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- Acta Universitaria, 2013, v. 23, n. 5, p. 20, doi. 10.15174/au.2013.478
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- Article
High-Performance Vertical Light-Emitting Transistors Based on ZnO Transistor/Quantum-Dot Light-Emitting Diode Integration and Electron Injection Layer Modification.
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- Micromachines, 2023, v. 14, n. 10, p. 1933, doi. 10.3390/mi14101933
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Bor arsenit bazlı nano-transistörlerde elektrot genişliğinin enerji aralığı üzerindeki etkisinin incelenmesi, bir DFT çalışması.
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- Nigde Omer Halisdemir University Journal of Engineering Sciences / Niğde Ömer Halisdemir Üniversitesi Mühendislik Bilimleri Dergisi, 2024, v. 13, n. 1, p. 60, doi. 10.28948/ngumuh.1310492
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One-Transistor Dynamic Random-Access Memory Based on Gate-All-Around Junction-Less Field-Effect Transistor with a Si/SiGe Heterostructure.
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- Electronics (2079-9292), 2020, v. 9, n. 12, p. 2134, doi. 10.3390/electronics9122134
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Surface-light-emitting transistors based on vertical-type metal-base organic transistors.
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- Journal of the Society for Information Display, 2011, v. 19, n. 9, p. 602, doi. 10.1889/JSID19.9.602
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Novel Quantum Structure of an III-V Tunneling Field-Effect Transistor with Source and Channel Heterojunction.
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- HOLOS, 2020, v. 1, p. 1, doi. 10.15628/holos.2020.8378
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晶态 IGZO 薄膜晶体管的研究进展.
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- Chinese Journal of Liquid Crystal & Displays, 2023, v. 38, n. 8, p. 1031, doi. 10.37188/CJLCD.2023-0121
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- Article
3D Double-Gate Junctionless Nanowire Transistor-Based Pass Transistor Logic Circuits for Digital Applications.
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- IETE Journal of Research, 2022, v. 68, n. 2, p. 1342, doi. 10.1080/03772063.2019.1649203
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Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics.
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- Advanced Functional Materials, 2023, v. 33, n. 8, p. 1, doi. 10.1002/adfm.202212367
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En Route to Wide Area Emitting Organic Light‐Emitting Transistors for Intrinsic Drive‐Integrated Display Applications: A Comprehensive Review.
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- Advanced Functional Materials, 2021, v. 31, n. 48, p. 1, doi. 10.1002/adfm.202105506
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Reconfigurable Multifunctional Ambipolar Polymer‐Blend Transistors with Improved Switching‐Off Capability.
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- Advanced Functional Materials, 2021, v. 31, n. 40, p. 1, doi. 10.1002/adfm.202103369
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A Review of Vertical Organic Transistors.
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- Advanced Functional Materials, 2020, v. 30, n. 20, p. 1, doi. 10.1002/adfm.201907113
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Contact Resistance in Organic Field‐Effect Transistors: Conquering the Barrier.
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- Advanced Functional Materials, 2020, v. 30, n. 20, p. 1, doi. 10.1002/adfm.201904576
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Understanding, Optimizing, and Utilizing Nonideal Transistors Based on Organic or Organic Hybrid Semiconductors.
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- Advanced Functional Materials, 2020, v. 30, n. 20, p. 1, doi. 10.1002/adfm.201903889
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Roadmap to Gigahertz Organic Transistors.
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- Advanced Functional Materials, 2020, v. 30, n. 20, p. 1, doi. 10.1002/adfm.201903812
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Field Effect Transistors: Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects (Adv. Funct. Mater. 18/2020).
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- Advanced Functional Materials, 2020, v. 30, n. 18, p. 1, doi. 10.1002/adfm.202070116
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Ferroelectric Field Effect Transistors: Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption (Adv. Funct. Mater. 1/2020).
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- Advanced Functional Materials, 2020, v. 30, n. 1, p. N.PAG, doi. 10.1002/adfm.202070005
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Ambipolar Transistors: Recent Advances in Ambipolar Transistors for Functional Applications (Adv. Funct. Mater. 40/2019).
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- Advanced Functional Materials, 2019, v. 29, n. 40, p. N.PAG, doi. 10.1002/adfm.201970279
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Flexible Low‐Power Operative Organic Source‐Gated Transistors.
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- Advanced Functional Materials, 2019, v. 29, n. 27, p. N.PAG, doi. 10.1002/adfm.201900650
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Graphene‐on‐Silicon Hybrid Field‐Effect Transistors.
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- Advanced Electronic Materials, 2023, v. 9, n. 5, p. 1, doi. 10.1002/aelm.202201083
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Extraordinarily Weak Temperature Dependence of the Drain Current in Small‐Molecule Schottky‐Contact‐Controlled Transistors through Active‐Layer and Contact Interplay.
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- Advanced Electronic Materials, 2023, v. 9, n. 3, p. 1, doi. 10.1002/aelm.202201163
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Computational Associative Memory with Amorphous Metal‐Oxide Channel 3D NAND‐Compatible Floating‐Gate Transistors.
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- Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200643
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Sputtered Electrolyte‐Gated Transistor with Modulated Metaplasticity Behaviors.
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- Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200463
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WSe<sub>2</sub> N‐Type Negative Capacitance Field‐Effect Transistor with Indium Low Schottky Barrier Contact.
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- Advanced Electronic Materials, 2022, v. 8, n. 2, p. 1, doi. 10.1002/aelm.202100829
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All‐Oxide Transparent Thin‐Film Transistors Based on Amorphous Zinc Tin Oxide Fabricated at Room Temperature: Approaching the Thermodynamic Limit of the Subthreshold Swing.
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- Advanced Electronic Materials, 2020, v. 6, n. 10, p. 1, doi. 10.1002/aelm.202000423
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InGaZnO Tunnel and Junction Transistors Based on Vertically Stacked Black Phosphorus/InGaZnO Heterojunctions.
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- Advanced Electronic Materials, 2020, v. 6, n. 8, p. 1, doi. 10.1002/aelm.202000291
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Polyvinyl Alcohol/SiO<sub>2</sub> Hybrid Dielectric for Transparent Flexible/Stretchable All‐Carbon‐Nanotube Thin‐Film‐Transistor Integration.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901133
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Effect of Gate Conductance on Hygroscopic Insulator Organic Field‐Effect Transistors.
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- Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.201901079
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Printed Flexible Organic Transistors with Tunable Aspect Ratios.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901207
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A Bacterial Photosynthetic Enzymatic Unit Modulating Organic Transistors with Light.
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- Advanced Electronic Materials, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1002/aelm.201900888
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Ambipolarity and Air Stability of Silicon Phthalocyanine Organic Thin‐Film Transistors.
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- Advanced Electronic Materials, 2019, v. 5, n. 8, p. N.PAG, doi. 10.1002/aelm.201900087
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Asymmetric Double‐Gate β‐Ga<sub>2</sub>O<sub>3</sub> Nanomembrane Field‐Effect Transistor for Energy‐Efficient Power Devices.
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- Advanced Electronic Materials, 2019, v. 5, n. 6, p. N.PAG, doi. 10.1002/aelm.201800938
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- Article
Low Leakage and High I<sub>ON</sub>/I<sub>OFF</sub> Ratio in Partial Gated AlGaN/GaN Nanowire Field‐Effect Transistors.
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- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 7, p. 1, doi. 10.1002/pssr.202200100
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Ambipolar MoS<sub>2</sub> Field‐Effect Transistor by Spatially Controlled Chemical Doping.
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- Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 9, p. N.PAG, doi. 10.1002/pssr.201900208
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Time-Dependent Sensitivity Tunable pH Sensors Based on the Organic-Inorganic Hybrid Electric-Double-Layer Transistor.
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- International Journal of Molecular Sciences, 2022, v. 23, n. 18, p. N.PAG, doi. 10.3390/ijms231810842
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One decade of fully transparent oxide thin-film transistors: fabrication, performance and stability.
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- Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 9, p. 605, doi. 10.1002/pssr.201307259
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Spin Transistors vs. Conventional Transistors: What Are the Benefits?
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- Journal of Superconductivity & Novel Magnetism, 2010, v. 23, n. 1, p. 61, doi. 10.1007/s10948-009-0537-y
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A new analytical method to extract the small-signal equivalent circuit of high frequency FET transistors.
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- Microwave & Optical Technology Letters, 2008, v. 50, n. 2, p. 453, doi. 10.1002/mop.23130
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Organic Field Effect Transistors: Noncovalent Functionalization and Passivation of Black Phosphorus with Optimized Perylene Diimides for Hybrid Field Effect Transistors (Adv. Mater. Interfaces 23/2020).
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- Advanced Materials Interfaces, 2020, v. 7, n. 23, p. 1, doi. 10.1002/admi.202070131
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- Article
Applications of Transistor-Based Biochemical Sensors.
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- Biosensors (2079-6374), 2023, v. 13, n. 4, p. 469, doi. 10.3390/bios13040469
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GAIN DEGRADATION AND ENHANCED LOW-DOSE-RATE SENSITIVITY IN BIPOLAR JUNCTION TRANSISTORS.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 2, p. 503, doi. 10.1142/S012915640400248X
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Relationship between crystalline structure of poly(3-hexylthiophene) blends and properties of organic thin-film transistors - a brief review.
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- Polimery, 2016, v. 61, n. 6, p. 433, doi. 10.14314/polimery.2016.433
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A Superjunction Insulated Gate Bipolar Transistor with Embedded Self-biased N-Type Metal–Oxide–Semiconductor Field-Effect Transistor.
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- Journal of Electronic Materials, 2023, v. 52, n. 3, p. 2177, doi. 10.1007/s11664-022-10148-1
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Self-Aligned Organic Metal–Semiconductor Field-Effect Transistor.
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- Journal of Electronic Materials, 2023, v. 52, n. 2, p. 1323, doi. 10.1007/s11664-022-10095-x
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- Article