Hexagonal Boron Nitride Thin Film for Flexible Resistive Memory Applications.

Qian, Kai; Tay, Roland Yingjie; Nguyen, Viet Cuong; Wang, Jiangxin; Cai, Guofa; Chen, Tupei; Teo, Edwin Hang Tong; Lee, Pooi See

Hexagonal boron nitride (hBN), which is a 2D layered dielectric material, sometimes referred as 'white graphene' due to its structural similarity with graphene, has attracted much attention due to its fascinating physical properties. Here, for the first time the use of chemical vapor deposition -grown hBN films to fabricate ultrathin (≈3 nm) flexible hBN-based resistive switching memory device is reported, and the switching mechanism through conductive atomic force microscopy and ex situ transmission electron microscopy is studied. The hBN-based resistive memory exhibits reproducible switching endurance, long retention time, and the capability to operate under extreme bending conditions. Contrary to the conventional electrochemical metallization theory, the conductive filament is found to commence its growth from the anode to cathode. This work provides an important step for broadening and deepening the understanding on the switching mechanism in filament-based resistive memories and propels the 2D material application in the resistive memory in future computing systems.

THIN film resistors; ELECTROCHEMICAL metallizing; ELECTRIC properties of graphene; HEXAGONAL crystal system; BORON nitride; ATOMIC force microscopy

Advanced Functional Materials, 2016, Vol 26, Issue 13, p2176

1616-301X

Academic Journal

10.1002/adfm.201504771