Found: 26
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Charge Traps in All‐Inorganic CsPbBr<sub>3</sub> Perovskite Nanowire Field‐Effect Phototransistors.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100105
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- Article
Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100002
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- Article
Ferroelectric‐nanocrack Device: Ferroelectric‐Nanocrack Switches for Memory and Complementary Logic with Zero Off‐current and Low Operating Voltage (Adv. Electron. Mater. 6/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202170021
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Masthead: (Adv. Electron. Mater. 6/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202170019
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- Article
Switchable Optically Active Schottky Barrier in La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>/BaTiO<sub>3</sub>/ITO Ferroelectric Tunnel Junction.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100069
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- Article
Hexagonal Boron Nitride: Mitigation of Electromigration in Metal Interconnects via Hexagonal Boron Nitride as an Ångström‐Thin Passivation Layer (Adv. Electron. Mater. 6/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202170020
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- Article
Polarization Stability: Robust Polarization Stability in a Self‐Assembled Ultrathin Organic Ferroelectric Nano Lamellae (Adv. Electron. Mater. 6/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202170018
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- Article
Phase Change Random Access Memory for Neuro‐Inspired Computing.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001241
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- Article
Neural Networks: Low‐Power Self‐Rectifying Memristive Artificial Neural Network for Near Internet‐of‐Things Sensor Computing (Adv. Electron. Mater. 6/2021).
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202170017
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- Article
Operation Principles of ZnO/Al<sub>2</sub>O<sub>3</sub>‐AlDMP/ZnO Stacked‐Channel Ternary Thin‐Film Transistor.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100247
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- Article
Dual‐Gate Organic Electrochemical Transistors for Marine Sensing.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100223
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- Article
High‐Performance Voice Recognition Based on Piezoelectric Polyacrylonitrile Nanofibers.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100206
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- Article
Parameterization of Metallic Grids on Transparent Conductive Electrodes for the Scaling of Organic Solar Cells.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100192
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- Article
High‐Performance Planar Heterojunction Perovskite Solar Cells Based on BaCl<sub>2</sub> Additive and Power Conversion Efficiency of Over 21%.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100165
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- Article
Optical Outcoupling Efficiency in Polymer Light‐Emitting Diodes.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100155
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- Article
Humidity‐Induced Nanoscale Restructuring in PEDOT:PSS and Cellulose Nanofibrils Reinforced Biobased Organic Electronics.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100137
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- Article
Robust Polarization Stability in a Self‐Assembled Ultrathin Organic Ferroelectric Nano Lamellae.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001085
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- Article
A Fully Integrated Ferroelectric Thin‐Film‐Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100082
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- Article
Rapid Growth of Monolayer MoSe<sub>2</sub> Films for Large‐Area Electronics.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001219
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- Article
PEDOT:Tosylate‐Polyamine‐Based Organic Electrochemical Transistors for High‐Performance Bioelectronics.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100059
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- Publication type:
- Article
Low‐Power Self‐Rectifying Memristive Artificial Neural Network for Near Internet‐of‐Things Sensor Computing.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100050
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- Publication type:
- Article
Tungsten‐Disulfide/Polyaniline High Frequency Supercapacitors.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100025
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- Article
Ferroelectric‐Nanocrack Switches for Memory and Complementary Logic with Zero Off‐current and Low Operating Voltage.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100023
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- Article
Gate‐Controlled Rectifying Direction in PdSe<sub>2</sub> Lateral Heterojunction Diode.
- Published in:
- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202100005
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- Article
Current Rectification, Resistive Switching, and Stable NDR Effect in BaTiO<sub>3</sub>/CeO<sub>2</sub> Heterostructure Devices.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001237
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- Article
Large Tunnel Electroresistance with Ultrathin Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Tunnel Barriers.
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- Advanced Electronic Materials, 2021, v. 7, n. 6, p. 1, doi. 10.1002/aelm.202001074
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- Article