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Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1059, doi. 10.1002/pssa.201431712
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- Publication type:
- Article
Investigations of dynamic performance in AlGaN/GaN HFETs with field plates by stressed C-V and dynamic on-resistance measurements.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1099, doi. 10.1002/pssa.201431643
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- Publication type:
- Article
Low-temperature transport of charge carriers in InGaN/GaN multiple quantum well light-emitting diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 930, doi. 10.1002/pssa.201431646
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- Publication type:
- Article
Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1104, doi. 10.1002/pssa.201431645
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- Publication type:
- Article
Contents.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 885, doi. 10.1002/pssa.201570430
- Publication type:
- Article
Recent and forthcoming publications in pss.
- Published in:
- 2015
- Publication type:
- Other
Nobel Lectures in Annalen der Physik.
- Published in:
- 2015
- Publication type:
- Other
Nitride Semiconductors.
- Published in:
- 2015
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- Publication type:
- Other
Lighting the 21st century.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 893, doi. 10.1002/pssa.201570434
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- Publication type:
- Article
Information for authors.
- Published in:
- 2015
- Publication type:
- Other
The efficiency challenge of nitride light-emitting diodes for lighting.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 899, doi. 10.1002/pssa.201431868
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- Publication type:
- Article
Growth and characterization of Al<sub> x</sub>Ga<sub>1− x</sub>N lateral polarity structures.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1039, doi. 10.1002/pssa.201431740
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- Publication type:
- Article
Design and optimization of InGaN superluminescent diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 997, doi. 10.1002/pssa.201431741
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- Publication type:
- Article
Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 947, doi. 10.1002/pssa.201431743
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- Publication type:
- Article
Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1122, doi. 10.1002/pssa.201431744
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- Publication type:
- Article
Advances in III-nitride semiconductor microdisk lasers.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 960, doi. 10.1002/pssa.201431745
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- Publication type:
- Article
Luminescence properties of InGaN-based dual-wavelength light-emitting diodes with different quantum-well arrangements.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 954, doi. 10.1002/pssa.201431748
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- Publication type:
- Article
Gallium nitride based power switches for next generation of power conversion.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1066, doi. 10.1002/pssa.201431810
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- Publication type:
- Article
Optimal ways of colour mixing for high-quality white-light LED sources.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 914, doi. 10.1002/pssa.201431576
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- Publication type:
- Article
Optical properties of a novel parabolic quantum well structure in InGaN/GaN light emitters.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 925, doi. 10.1002/pssa.201431642
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- Publication type:
- Article
Degradation mechanisms and lifetime of state-of-the-art green laser diodes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 974, doi. 10.1002/pssa.201431714
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- Publication type:
- Article
The efficiency challenge of nitride light-emitting diodes for lighting (Phys. Status Solidi A 5∕2015).
- Published in:
- 2015
- By:
- Publication type:
- Other
Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs (Phys. Status Solidi A 5∕2015).
- Published in:
- 2015
- By:
- Publication type:
- Other
Issue Information.
- Published in:
- 2015
- Publication type:
- Other
High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1110, doi. 10.1002/pssa.201431660
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- Publication type:
- Article
Effects of a GaN cap layer on the reliability of AlGaN/GaN Schottky diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1158, doi. 10.1002/pssa.201431719
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- Publication type:
- Article
Reduction in current collapse of AlGaN/GaN HEMTs using methyl silsesquioxane-based low- k insulator films.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1153, doi. 10.1002/pssa.201431665
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- Publication type:
- Article
Low propagation loss in GaN/AlGaN-based ridge waveguides.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1043, doi. 10.1002/pssa.201431663
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- Publication type:
- Article
Polarization dilution in a Ga-polar UV-LED to reduce the influence of polarization charges.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 920, doi. 10.1002/pssa.201431730
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- Publication type:
- Article
Enhanced quantum efficiency of AlGaN photodetectors by patterned growth.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1005, doi. 10.1002/pssa.201431680
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- Publication type:
- Article
Suppression of current collapse in AlGaN/GaN MISHFET with carbon- doped GaN/undoped GaN multi-layered buffer structure.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1116, doi. 10.1002/pssa.201431668
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- Publication type:
- Article
Improvement of strained InGaN solar cell performance with a heavily doped n<sup>+</sup>-GaN substrate.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1033, doi. 10.1002/pssa.201431732
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- Publication type:
- Article
InGaN photocatalysts on conductive Ga<sub>2</sub>O<sub>3</sub> substrates.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1029, doi. 10.1002/pssa.201431731
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- Publication type:
- Article
Normally-off GaN MIS-HEMT using a combination of recessed-gate structure and CF<sub>4</sub> plasma treatment.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1170, doi. 10.1002/pssa.201431737
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- Publication type:
- Article
Implementation and investigation of mode locking in GaN-based laser diodes in external cavity configuration.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 986, doi. 10.1002/pssa.201431682
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- Publication type:
- Article
E-beam pumped mid-UV sources based on MBE-grown AlGaN MQW.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1011, doi. 10.1002/pssa.201431756
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- Publication type:
- Article
Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1091, doi. 10.1002/pssa.201431636
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- Publication type:
- Article
Advantages of III-nitride laser diodes in solid-state lighting.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 980, doi. 10.1002/pssa.201431700
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- Publication type:
- Article
Al(Ga)N/GaN high electron mobility transistors on silicon.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1049, doi. 10.1002/pssa.201532070
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- Publication type:
- Article
Enhancement-mode AlGaN/GaN HEMTs with thin and high Al composition barrier layers using O<sub>2</sub> plasma implantation.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1081, doi. 10.1002/pssa.201431585
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- Publication type:
- Article
Self-aligned normally-off metal-oxide-semiconductor n<sup>++</sup>GaN/InAlN/GaN high electron mobility transistors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1086, doi. 10.1002/pssa.201431588
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- Publication type:
- Article
Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1130, doi. 10.1002/pssa.201431897
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- Publication type:
- Article
Optical properties of arrays of hexagonal GaN microdisks acting as whispering-gallery-mode-type optical microcavities.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1017, doi. 10.1002/pssa.201431651
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- Publication type:
- Article
Interface trap states in Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1075, doi. 10.1002/pssa.201431652
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- Publication type:
- Article
Performance evaluation of channel length downscaling of various high voltage AlGaN/GaN power HEMTs.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1137, doi. 10.1002/pssa.201431657
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- Publication type:
- Article
Reduction of the thermal budget of AlGaN/GaN heterostructures grown on silicon: A step towards monolithic integration of GaN-HEMTs with CMOS.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1145, doi. 10.1002/pssa.201431658
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- Publication type:
- Article
Top- and bottom-illumination of solar-blind AlGaN metal-semiconductor-metal photodetectors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1021, doi. 10.1002/pssa.201431720
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- Publication type:
- Article
Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1162, doi. 10.1002/pssa.201431724
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- Publication type:
- Article
Improvement of vertical light extraction from GaN-based LEDs on moth-eye patterned sapphire substrates.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 935, doi. 10.1002/pssa.201431725
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- Publication type:
- Article
Polarization-resolved electroluminescence study of InGaN/GaN dot-in-a-wire light-emitting diodes grown by molecular beam epitaxy.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 941, doi. 10.1002/pssa.201431726
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- Publication type:
- Article