Found: 16
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Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 286, doi. 10.15407/spqeo11.03.286
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- Article
Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 266
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- Article
Improvement of sensor response reproducibility and multistage recognition approach for samples with dominant components.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 240, doi. 10.15407/spqeo11.03.240
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- Article
Development of a KDP crystal growth system based on TRM and characterization of the grown crystals.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 248, doi. 10.15407/spqeo11.03.248
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Weighting method of the Fourier-kinoform synthesis.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 303, doi. 10.15407/spqeo11.03.303
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- Article
Optical properties of p-conjugated donor-acceptor systems with controlled hyperpolarizability.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 292, doi. 10.15407/spqeo11.03.292
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- Article
Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 257, doi. 10.15407/spqeo11.03.257
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- Article
Investigations of surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film structure.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 252, doi. 10.15407/spqeo11.03.252
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- Article
Optical-electronic sensor of spacecraft heat protection ablation.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 245, doi. 10.15407/spqeo11.03.245
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- Article
Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC<sub>60</sub>) film heterostructures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 236, doi. 10.15407/spqeo11.03.236
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- Article
Fluctuations of current, electroluminescence and acoustic emission in light-emitting ?<sup>3</sup>?<sup>5</sup> heterostructures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 230, doi. 10.15407/spqeo11.03.230
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- Article
Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 °C.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 226, doi. 10.15407/spqeo11.03.226
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Structural studies of iron doped 3B<sub>2</sub>O<sub>3</sub>·0.7PbO·0.3Ag<sub>2</sub>O glasses by FT-IR and Raman spectroscopies.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 221, doi. 10.15407/spqeo11.03.221
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Heat-resistant barrier and ohmic contacts based on TiB<sub>x</sub> and ZrB<sub>x</sub> interstitial phases to microwave diode structures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 209, doi. 10.15407/spqeo11.03.209
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Theoretical consideration of charge transport through the nanoindentor/GaAs junction.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 217, doi. 10.15407/spqeo11.03.217
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- Article
Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2008, v. 11, n. 3, p. 203, doi. 10.15407/spqeo11.03.203
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- Article