Found: 19
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Energy relaxations of hot electrons in AlGaN/AlN/GaN heterostructures grown by MOCVD on sapphire and 6H-SiC substrates.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110218
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- Article
The transport mechanism of gate leakage current in AlGaN/GaN high electron mobility transistors.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110209
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- Article
Advanced backside sample preparation for multi-technique surface analysis.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110191
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- Article
Schottky barrier formation at the Au to rare earth doped GaN thin film interface.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110082
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- Article
ZnO and Al-doped ZnO thin films prepared by spray pyrolysis for ethanol gas sensing.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110072
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- Article
Structural and mechanical properties of radiofrequency N2/H2 cold plasma-nitrided C38 carbon steel.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110061
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- Article
Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110136
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- Article
A quantitative analysis of elements in soil using laser-induced breakdown spectroscopy technique.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110128
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- Article
Effect of Ag additive on the photoconductive properties of (Se80Te20)100−xAgx (1 ≤ x ≤ 4) thin films.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110127
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- Article
Low-voltage pentacene field-effect transistors with high mobility and unusual change of the mobility by simple storage.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110096
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- Article
Growth of GaAs/AlxGa1−xAs layers by LPE method and their characterization by SIMS.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110106
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- Article
Development of a chamber to investigate high-intensity compression waves upon live cell cultures.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110052
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- Article
Optical and electrical properties of nanostructured heterojunction (Au|PdPc|ClAlPc|Al) and using as O2 sensor.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011100376
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- Article
Photogenerated charge carrier recombination processes in CdS/P3OT solar cells: effect of structural and optoelectronic properties of CdS films.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110032
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- Article
Doping and calcination effect on nanostructured aluminosilicates processed by sol-gel route.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011100524
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- Article
Electrical and optical properties of annealed plasma-modified porous silicon.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011100508
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- Article
Magnetoelectric effect in ferromagnetic-ferroelectric tunneling junctions.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011100405
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- Article
Improved polymer solar cell performance by engineering of cathode interface.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011110047
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- Article
An atmospheric pressure plasma source driven by a train of monopolar high voltage pulses superimposed to a dc voltage.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 3, p. N.PAG, doi. 10.1051/epjap/2011100184
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