Found: 29
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Subminiature emitters based on a single (111) In(Ga)As quantum dot and hybrid microcavity.
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- Semiconductors, 2017, v. 51, n. 11, p. 1399, doi. 10.1134/S1063782617110100
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Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots.
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- Semiconductors, 2017, v. 51, n. 11, p. 1395, doi. 10.1134/S1063782617110136
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Effect of electric field on the ratio between the rashba and dresselhaus parameters in III-V heterostructures.
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- Semiconductors, 2017, v. 51, n. 11, p. 1409, doi. 10.1134/S1063782617110094
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Thermoelectric effects in nanoscale layers of manganese silicide.
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- Semiconductors, 2017, v. 51, n. 11, p. 1403, doi. 10.1134/S1063782617110112
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Features of the selective manganese doping of GaAs structures.
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- Semiconductors, 2017, v. 51, n. 11, p. 1415, doi. 10.1134/S1063782617110148
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Contactless characterization of manganese and carbon delta-layers in gallium arsenide.
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- Semiconductors, 2017, v. 51, n. 11, p. 1420, doi. 10.1134/S1063782617110161
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Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors.
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- Semiconductors, 2017, v. 51, n. 11, p. 1431, doi. 10.1134/S1063782617110185
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Low-temperature deposition of SiN Films in SiH/Ar + N inductively coupled plasma under high silane dilution with argon.
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- Semiconductors, 2017, v. 51, n. 11, p. 1449, doi. 10.1134/S1063782617110215
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Optimization of the superlattice parameters for THz diodes.
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- Semiconductors, 2017, v. 51, n. 11, p. 1439, doi. 10.1134/S1063782617110227
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Transport of hot charge carriers in Si, GaAs, InGaAs, and GaN submicrometer semiconductor structures with nanometer-scale clusters of radiation-induced defects.
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- Semiconductors, 2017, v. 51, n. 11, p. 1435, doi. 10.1134/S1063782617110288
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On the cascade capture of electrons at charged dipoles in weakly compensated semiconductors.
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- Semiconductors, 2017, v. 51, n. 11, p. 1444, doi. 10.1134/S1063782617110069
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Inhomogeneous dopant distribution in III-V nanowires.
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- Semiconductors, 2017, v. 51, n. 11, p. 1427, doi. 10.1134/S1063782617110173
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Study of the influence of ga as a surfactant during the high-temperature ammonia MBE of AlN layers on the properties of nitride heterostructures.
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- Semiconductors, 2017, v. 51, n. 11, p. 1453, doi. 10.1134/S1063782617110045
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Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate.
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- Semiconductors, 2017, v. 51, n. 11, p. 1477, doi. 10.1134/S1063782617110057
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Amplification of terahertz radiation in a plasmon n-i-p-i graphene structure with charge-carrier injection.
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- Semiconductors, 2017, v. 51, n. 11, p. 1460, doi. 10.1134/S1063782617110240
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MBE growth of ultrathin III-V nanowires on a highly mismatched SiC/Si(111) substrate.
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- Semiconductors, 2017, v. 51, n. 11, p. 1472, doi. 10.1134/S1063782617110252
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Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy.
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- Semiconductors, 2017, v. 51, n. 11, p. 1485, doi. 10.1134/S1063782617110197
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Cleaved-edge photoluminescence spectroscopy of multilayer heterostructures.
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- Semiconductors, 2017, v. 51, n. 11, p. 1456, doi. 10.1134/S1063782617110239
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Semiconductor Structures with a one-dimensional quantum channel and in-plane side gates fabricated by pulse force nanolithography.
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- Semiconductors, 2017, v. 51, n. 11, p. 1481, doi. 10.1134/S1063782617110082
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Analysis of the GaN-HEMT parameters before and after gamma-neutron irradiation.
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- Semiconductors, 2017, v. 51, n. 11, p. 1490, doi. 10.1134/S1063782617110264
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Degradation of the characteristics of GaAs bipolar transistors with a thin base due to the formation in them of nanometer-sized clusters of radiation-induced defects as a result of irradiation with neutrons.
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- Semiconductors, 2017, v. 51, n. 11, p. 1466, doi. 10.1134/S106378261711029X
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Cyclotron resonance features in a three-dimensional topological insulators.
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- Semiconductors, 2017, v. 51, n. 11, p. 1495, doi. 10.1134/S1063782617110276
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Energy relaxation in a quantum dot at the edge of a two-dimensional topological insulator.
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- Semiconductors, 2017, v. 51, n. 11, p. 1505, doi. 10.1134/S106378261711015X
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Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures.
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- Semiconductors, 2017, v. 51, n. 11, p. 1513, doi. 10.1134/S1063782617110203
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Long-wavelength sensitivity limit in MBE-grown PbSnTe:In films: Correlation with the film structure and composition.
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- Semiconductors, 2017, v. 51, n. 11, p. 1522, doi. 10.1134/S1063782617110033
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Giant effect of terahertz-radiation rectification in periodic graphene plasmonic structures.
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- Semiconductors, 2017, v. 51, n. 11, p. 1500, doi. 10.1134/S1063782617110124
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Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates.
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- Semiconductors, 2017, v. 51, n. 11, p. 1527, doi. 10.1134/S1063782617110070
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Effect of the surface on transport phenomena in PbSnTe:In/BaF films.
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- Semiconductors, 2017, v. 51, n. 11, p. 1517, doi. 10.1134/S1063782617110021
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Optical thyristor based on GaAs/InGaP materials.
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- Semiconductors, 2017, v. 51, n. 11, p. 1391, doi. 10.1134/S1063782617110306
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