Found: 21
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Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers.
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- Semiconductors, 2012, v. 46, n. 10, p. 1331, doi. 10.1134/S1063782612100132
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On the active conductivity of a three-barrier resonant-tunneling structure and optimization of quantum cascade laser operation.
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- Semiconductors, 2012, v. 46, n. 10, p. 1304, doi. 10.1134/S1063782612100156
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Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates.
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- Semiconductors, 2012, v. 46, n. 10, p. 1341, doi. 10.1134/S1063782612100065
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Small-signal field effect in GaAs/InAs quantum-dot heterostructures.
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- Semiconductors, 2012, v. 46, n. 10, p. 1274, doi. 10.1134/S1063782612100144
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Device characteristics of long-wavelength lasers based on self-organized quantum dots.
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- Semiconductors, 2012, v. 46, n. 10, p. 1225, doi. 10.1134/S1063782612100223
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Isochronous annealing of n-Si samples irradiated with 25-MeV protons.
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- Semiconductors, 2012, v. 46, n. 10, p. 1251, doi. 10.1134/S1063782612100107
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- Article
Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region.
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- Semiconductors, 2012, v. 46, n. 10, p. 1281, doi. 10.1134/S1063782612100168
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- Article
Failure analysis of electrical-thermal-optical characteristics of LEDs based on AlGaInP and InGaN/GaN.
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- Semiconductors, 2012, v. 46, n. 10, p. 1310, doi. 10.1134/S1063782612100041
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Radiative and nonradiative recombination in the active layers of high-power InGaAs/GaAs/AlGaAs laser diodes.
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- Semiconductors, 2012, v. 46, n. 10, p. 1316, doi. 10.1134/S1063782612100077
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- Article
Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions.
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- Semiconductors, 2012, v. 46, n. 10, p. 1291, doi. 10.1134/S1063782612100089
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- Article
InGaN/GaN heterostructures grown by submonolayer deposition.
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- Semiconductors, 2012, v. 46, n. 10, p. 1335, doi. 10.1134/S106378261210017X
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Influence of source-to-substrate distance on the properties of ZnS films grown by close-space sublimation.
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- Semiconductors, 2012, v. 46, n. 10, p. 1326, doi. 10.1134/S106378261210003X
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- Article
Quantum-confinement effect in silicon-on-insulator films implanted with high doses of hydrogen ions.
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- Semiconductors, 2012, v. 46, n. 10, p. 1286, doi. 10.1134/S1063782612100181
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- Article
850-nm diode lasers based on AlGaAsP/GaAs heterostructures.
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- Semiconductors, 2012, v. 46, n. 10, p. 1321, doi. 10.1134/S106378261210020X
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Comparative assessment of III-V heterostructure and silicon underlap double gate MOSFETs.
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- Semiconductors, 2012, v. 46, n. 10, p. 1299, doi. 10.1134/S1063782612100119
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- Article
Transport phenomena in the anisotropic layered compounds MeBiTe (Me = Ge, Pb, Sn).
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- Semiconductors, 2012, v. 46, n. 10, p. 1256, doi. 10.1134/S1063782612100211
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Study of the impurity photoconductivity and luminescence in ZnSe:Ni crystals in the visible spectral region.
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- Semiconductors, 2012, v. 46, n. 10, p. 1265, doi. 10.1134/S1063782612100090
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- Article
Growth of 4 H silicon carbide crystals on a (11 $$ \bar 2 $$2) seed.
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- Semiconductors, 2012, v. 46, n. 10, p. 1346, doi. 10.1134/S1063782612100053
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- Article
Inversion of the impurity conductivity sign in AsSe:Bi films deposited by two different methods.
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- Semiconductors, 2012, v. 46, n. 10, p. 1296, doi. 10.1134/S1063782612100028
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Creation and photoelectric properties of Ox/ p-InAs heterostructures.
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- Semiconductors, 2012, v. 46, n. 10, p. 1270, doi. 10.1134/S1063782612100120
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On superparamagnetism in quasi-one-dimensional semiconductor antiferromagnets TlFeS and TlFeSe.
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- Semiconductors, 2012, v. 46, n. 10, p. 1263, doi. 10.1134/S1063782612100193
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- Article