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Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties.
- Published in:
- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900437
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- Article
Masthead.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.202070014
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- Article
A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900545
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- Article
Compound Semiconductors.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.202000025
- Publication type:
- Article
A Study on the First‐Derivative Output Properties of GaN Static Induction Transistor with Submicrometer Fin Width.
- Published in:
- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900545
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- Article
Zinc Oxide Grown by Atomic Layer Deposition: From Heavily n‐Type to p‐Type Material.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900472
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- Article
High‐Temperature Annealing of Sputter‐Deposited AlN on (001) Diamond Substrate.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900447
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- Article
Evaluate Fixed Charge and Oxide‐Trapped Charge on SiO<sub>2</sub>/GaN Metal‐Oxide‐Semiconductor Structure Before and After Postannealing.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900444
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- Article
Novel Fabrication Technique of Suspended Nanowire Devices for Nanomechanical Applications.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900401
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- Article
Turbostratic Stacking Effect in Multilayer Graphene on the Electrical Transport Properties.
- Published in:
- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900437
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- Publication type:
- Article
Emission at 1.6 μm from InAs Quantum Dots in Metamorphic InGaAs Matrix.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900392
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- Article
Below‐Bandgap Photoluminescence from GaAs.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900391
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- Article
Influence of a Longitudinal Field on the Large In‐Plane Nuclear Field Formation in Single Quantum Dots.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900381
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- Article
Ethanol Detection at the Parts per Billion Level with Single‐Stranded‐DNA‐Modified Graphene Field‐Effect Transistors.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900376
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- Article
Detection of Nonradiative Recombination Centers in GaPN (N:0.105%) by Below‐Gap Excitation Light.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900377
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- Article
Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900375
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- Article
Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900374
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- Article
Avalanche Multiplication Noise in GaN p–n Junctions Grown on Native GaN Substrates.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900373
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- Article
Chemical Vapor Deposition Growth of BN Thin Films Using B<sub>2</sub>H<sub>6</sub> and NH<sub>3</sub>.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900318
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The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO<sub>2</sub>/GaN Interface.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900368
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Nitrogen Doping Effect in Cu<sub>4</sub>O<sub>3</sub> Thin Films Fabricated by Radio Frequency Magnetron Sputtering.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900363
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n‐Doped InGaP Nanowire Shells in GaAs/InGaP Core–Shell p–n Junctions.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900358
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High Stability of Epitaxial Graphene on a SiC Substrate.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900357
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- Article
Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900367
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Significant Effects of the D<sup>−</sup> Band on the Hall Coefficient and the Hall Mobility of n‐InP.
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- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900354
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