Found: 28
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Atom Probe Tomography of Zinc Oxide Nanowires.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 801, doi. 10.1007/s11664-011-1803-x
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- Article
Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 881, doi. 10.1007/s11664-011-1881-9
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- Article
Effects of Growth Temperature on Indium Incorporation in InAlN Alloys Grown by GSMBE on Si(111).
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 824, doi. 10.1007/s11664-012-1967-z
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- Article
Highly Ordered Vertical Silicon Nanowire Array Composite Thin Films for Thermoelectric Devices.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 887, doi. 10.1007/s11664-012-1904-1
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- Article
Impact of Parylene-A Encapsulation on ZnO Nanobridge Sensors and Sensitivity Enhancement via Continuous Ultraviolet Illumination.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 873, doi. 10.1007/s11664-011-1867-7
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MOCVD Growth of Erbium Monoantimonide Thin Film and Nanocomposites for Thermoelectrics.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 971, doi. 10.1007/s11664-012-2094-6
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- Article
Fabrication of High-Quality CoFeSi/SiON/Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiON Barrier for Si-Based Spin Transistors.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 954, doi. 10.1007/s11664-012-2078-6
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- Article
Optimization of Molecular Beam Epitaxy (MBE) Growth for the Development of Mid-Infrared (IR) II-VI Quantum Cascade Lasers.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 944, doi. 10.1007/s11664-012-2082-x
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- Article
Comparison of Photonic-Crystal-Enhanced Thermophotovoltaic Devices With and Without a Resonant Cavity.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 928, doi. 10.1007/s11664-012-2081-y
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- Article
Controlling n-Type Carrier Density from Er Doping of InGaAs with MBE Growth Temperature.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 948, doi. 10.1007/s11664-012-2050-5
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- Article
Performance of MnO Crystallographic Phases in Rechargeable Lithium-Air Oxygen Cathode.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 921, doi. 10.1007/s11664-012-2046-1
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- Article
Sensitivity of Strained and Unstrained Structure Growth on GaAs (111)B.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 959, doi. 10.1007/s11664-012-2071-0
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- Article
Nanomanufacturing Strategy for Aligned Assembly of Nanowire Arrays.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 935, doi. 10.1007/s11664-012-2058-x
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- Article
Surface Functionalization of Hydrogen-Terminated Si for Biosensing Applications.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 830, doi. 10.1007/s11664-012-1996-7
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- Article
Coalescence of InP Epitaxial Lateral Overgrowth by MOVPE with V/III Ratio Variation.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 845, doi. 10.1007/s11664-012-2020-y
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- Article
Synthesis of GeSn Alloy Thin Films Using Ion Implantation and Pulsed Laser Melting (II-PLM).
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 837, doi. 10.1007/s11664-012-2011-z
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- Article
Growth Studies on Quaternary AlInGaN Layers for HEMT Application.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 905, doi. 10.1007/s11664-012-1989-6
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- Article
Static Performance of 20 A, 1200 V 4H-SiC Power MOSFETs at Temperatures of −187°C to 300°C.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 910, doi. 10.1007/s11664-012-2000-2
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- Article
Thermoelectric Properties of Mn-Doped CaAlSb.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 813, doi. 10.1007/s11664-012-1951-7
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- Article
GaSb-Based Mid-Infrared Single Lateral Mode Lasers Fabricated by Selective Wet Etching Technique with an Etch Stop Layer.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 899, doi. 10.1007/s11664-012-1956-2
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- Article
InGaAs-InGaN Wafer-Bonded Current Aperture Vertical Electron Transistors (BAVETs).
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 857, doi. 10.1007/s11664-012-1977-x
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- Article
LaAlO/SrTiO Epitaxial Heterostructures by Atomic Layer Deposition.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 819, doi. 10.1007/s11664-012-1960-6
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- Article
Solution-Processed High- k Dielectric, ZrO, and Integration in Thin-Film Transistors.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 895, doi. 10.1007/s11664-012-1905-0
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- Article
In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 865, doi. 10.1007/s11664-011-1852-1
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- Article
Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 965, doi. 10.1007/s11664-012-1920-1
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- Article
Scalable Electrical Properties of Axial GaAs Nanowire pn-Diodes.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 809, doi. 10.1007/s11664-011-1824-5
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- Article
Near-Ultraviolet Light-Emitting Devices Using Vertical ZnO Nanorod Arrays.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 853, doi. 10.1007/s11664-012-1919-7
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- Article
A Bondable Metallization Stack That Prevents Diffusion of Oxygen and Gold into Monolithically Integrated Circuits Operating Above 500°C.
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- Journal of Electronic Materials, 2012, v. 41, n. 5, p. 915, doi. 10.1007/s11664-011-1792-9
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- Article